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FI20000125A7 - Menetelmä optoelektronisen komponentin valmistamiseksi ja optoelektroninen komponentti - Google Patents

Menetelmä optoelektronisen komponentin valmistamiseksi ja optoelektroninen komponentti Download PDF

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Publication number
FI20000125A7
FI20000125A7 FI20000125A FI20000125A FI20000125A7 FI 20000125 A7 FI20000125 A7 FI 20000125A7 FI 20000125 A FI20000125 A FI 20000125A FI 20000125 A FI20000125 A FI 20000125A FI 20000125 A7 FI20000125 A7 FI 20000125A7
Authority
FI
Finland
Prior art keywords
well structure
optoelectronic component
component
manufacturing
substrate
Prior art date
Application number
FI20000125A
Other languages
English (en)
Swedish (sv)
Other versions
FI20000125L (fi
FI20000125A0 (fi
Inventor
Markus Pessa
Tomi Leinonen
Seppo Orsila
Petteri Uusimaa
Original Assignee
Optoelectronics Res Centre
Tampereen Teknillinen Korkeakoulu
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Optoelectronics Res Centre, Tampereen Teknillinen Korkeakoulu filed Critical Optoelectronics Res Centre
Priority to FI20000125A priority Critical patent/FI20000125A7/fi
Publication of FI20000125A0 publication Critical patent/FI20000125A0/fi
Priority to AU2001230269A priority patent/AU2001230269A1/en
Priority to PCT/FI2001/000043 priority patent/WO2001054173A1/en
Publication of FI20000125L publication Critical patent/FI20000125L/fi
Publication of FI20000125A7 publication Critical patent/FI20000125A7/fi

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34326—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on InGa(Al)P, e.g. red laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0207—Substrates having a special shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/341—Structures having reduced dimensionality, e.g. quantum wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10P14/2911—
    • H10P14/2926—
    • H10P14/3221—
    • H10P14/3421—

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Abstract

Nyt esillä oleva keksintö kohdistuu komponenttiin käytettäväksi sellaisten puolijohdesirujen valmistuksessa, jotka soveltuvat käytettäväksi näkyvän punaisen valon aallonpituusalueella 630-690 nm (nanometriä) optoelektronisissa sovelluksissa. Komponentti käsittää oleellisesti levymäisen substraatin (1), jonka ainakin toiselle pinnalle on höyrystetty ainakin kaksikerroksinen kaivorakenne (5a, 5b). Komponentin substraatin pinnassa, johon kaivorakenne on muodostettu, kaivorakenteen kidesuunta poikkeaa suunnasta ([100]), ja kaivorakenne on muodostettu SSMBE (solid source molecular beam epitaxy) menetelmää käyttäen.
FI20000125A 2000-01-21 2000-01-21 Menetelmä optoelektronisen komponentin valmistamiseksi ja optoelektroninen komponentti FI20000125A7 (fi)

Priority Applications (3)

Application Number Priority Date Filing Date Title
FI20000125A FI20000125A7 (fi) 2000-01-21 2000-01-21 Menetelmä optoelektronisen komponentin valmistamiseksi ja optoelektroninen komponentti
AU2001230269A AU2001230269A1 (en) 2000-01-21 2001-01-19 A method for manufacturing an opto-electronic quantum well component, and an opto-electronic quantum well component
PCT/FI2001/000043 WO2001054173A1 (en) 2000-01-21 2001-01-19 A method for manufacturing an opto-electronic quantum well component, and an opto-electronic quantum well component

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FI20000125A FI20000125A7 (fi) 2000-01-21 2000-01-21 Menetelmä optoelektronisen komponentin valmistamiseksi ja optoelektroninen komponentti

Publications (3)

Publication Number Publication Date
FI20000125A0 FI20000125A0 (fi) 2000-01-21
FI20000125L FI20000125L (fi) 2001-10-16
FI20000125A7 true FI20000125A7 (fi) 2001-10-16

Family

ID=8557156

Family Applications (1)

Application Number Title Priority Date Filing Date
FI20000125A FI20000125A7 (fi) 2000-01-21 2000-01-21 Menetelmä optoelektronisen komponentin valmistamiseksi ja optoelektroninen komponentti

Country Status (3)

Country Link
AU (1) AU2001230269A1 (fi)
FI (1) FI20000125A7 (fi)
WO (1) WO2001054173A1 (fi)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2905667B2 (ja) * 1992-12-17 1999-06-14 シャープ株式会社 Ｉｉ−ｖｉ族化合物半導体薄膜の製造方法およびｉｉ−ｖｉ族化合物半導体装置

Also Published As

Publication number Publication date
WO2001054173A1 (en) 2001-07-26
FI20000125L (fi) 2001-10-16
FI20000125A0 (fi) 2000-01-21
AU2001230269A1 (en) 2001-07-31

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