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FI117944B - Menetelmä siirtymämetallinitridiohutkalvojen kasvattamiseksi - Google Patents

Menetelmä siirtymämetallinitridiohutkalvojen kasvattamiseksi Download PDF

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Publication number
FI117944B
FI117944B FI992234A FI19992234A FI117944B FI 117944 B FI117944 B FI 117944B FI 992234 A FI992234 A FI 992234A FI 19992234 A FI19992234 A FI 19992234A FI 117944 B FI117944 B FI 117944B
Authority
FI
Finland
Prior art keywords
group
process according
metal
tungsten
alkyl
Prior art date
Application number
FI992234A
Other languages
English (en)
Finnish (fi)
Swedish (sv)
Other versions
FI19992234L (fi
Inventor
Pekka Soininen
Kai-Erik Elers
Sari Kaipio
Ville Saanila
Suvi Paeivikki Haukka
Original Assignee
Asm Int
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asm Int filed Critical Asm Int
Priority to FI992234A priority Critical patent/FI117944B/fi
Priority to FI20000564A priority patent/FI119941B/fi
Priority to TW089121352A priority patent/TW541351B/zh
Priority to US09/687,204 priority patent/US6482262B1/en
Priority to EP00969596A priority patent/EP1242647B1/de
Priority to AU79268/00A priority patent/AU7926800A/en
Priority to US09/687,205 priority patent/US6475276B1/en
Priority to KR1020027004825A priority patent/KR100744219B1/ko
Priority to DE60004566T priority patent/DE60004566T2/de
Priority to PCT/FI2000/000895 priority patent/WO2001027347A1/en
Priority to JP2001529476A priority patent/JP4713041B2/ja
Priority to US10/110,730 priority patent/US6863727B1/en
Priority to US10/049,125 priority patent/US6902763B1/en
Priority to EP00973583A priority patent/EP1221178A1/de
Priority to AU10884/01A priority patent/AU1088401A/en
Priority to KR1020027004824A priority patent/KR100737901B1/ko
Priority to AU12082/01A priority patent/AU1208201A/en
Priority to JP2001532259A priority patent/JP4965782B2/ja
Priority to PCT/US2000/028537 priority patent/WO2001029280A1/en
Priority to PCT/US2000/028654 priority patent/WO2001029893A1/en
Priority to JP2001531142A priority patent/JP4746234B2/ja
Publication of FI19992234L publication Critical patent/FI19992234L/fi
Priority to US10/210,715 priority patent/US6821889B2/en
Priority to US10/246,131 priority patent/US6800552B2/en
Priority to US10/969,297 priority patent/US7329590B2/en
Priority to US10/990,424 priority patent/US7144809B2/en
Priority to US11/288,872 priority patent/US7749871B2/en
Priority to US11/634,818 priority patent/US7485340B2/en
Application granted granted Critical
Publication of FI117944B publication Critical patent/FI117944B/fi

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/38—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/32—Carbides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C23C16/45531—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations specially adapted for making ternary or higher compositions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C23C16/45534—Use of auxiliary reactants other than used for contributing to the composition of the main film, e.g. catalysts, activators or scavengers
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • H10P14/432—
    • H10W20/033—
    • H10W20/048—

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
FI992234A 1959-10-10 1999-10-15 Menetelmä siirtymämetallinitridiohutkalvojen kasvattamiseksi FI117944B (fi)

Priority Applications (27)

Application Number Priority Date Filing Date Title
FI992234A FI117944B (fi) 1999-10-15 1999-10-15 Menetelmä siirtymämetallinitridiohutkalvojen kasvattamiseksi
FI20000564A FI119941B (fi) 1999-10-15 2000-03-10 Menetelmä nanolaminaattien valmistamiseksi
TW089121352A TW541351B (en) 1999-10-15 2000-10-12 Method of depositing transition metal nitride thin films
EP00969596A EP1242647B1 (de) 1999-10-15 2000-10-13 Verfahren zum abscheiden von dünnen übergangsmetall-nitridfilmen
US09/687,204 US6482262B1 (en) 1959-10-10 2000-10-13 Deposition of transition metal carbides
US09/687,205 US6475276B1 (en) 1999-10-15 2000-10-13 Production of elemental thin films using a boron-containing reducing agent
KR1020027004825A KR100744219B1 (ko) 1999-10-15 2000-10-13 전이 금속 질화물 박막의 증착 방법
DE60004566T DE60004566T2 (de) 1999-10-15 2000-10-13 Verfahren zum abscheiden von dünnen übergangsmetall-nitridfilmen
PCT/FI2000/000895 WO2001027347A1 (en) 1999-10-15 2000-10-13 Method of depositing transition metal nitride thin films
JP2001529476A JP4713041B2 (ja) 1999-10-15 2000-10-13 遷移金属窒化物薄膜の堆積方法
US10/110,730 US6863727B1 (en) 1999-10-15 2000-10-13 Method of depositing transition metal nitride thin films
AU79268/00A AU7926800A (en) 1999-10-15 2000-10-13 Method of depositing transition metal nitride thin films
US10/049,125 US6902763B1 (en) 1999-10-15 2000-10-16 Method for depositing nanolaminate thin films on sensitive surfaces
AU10884/01A AU1088401A (en) 1999-10-15 2000-10-16 Deposition of transition metal carbides
KR1020027004824A KR100737901B1 (ko) 1999-10-15 2000-10-16 민감한 표면에 나노적층박막을 증착하는 방법
AU12082/01A AU1208201A (en) 1999-10-15 2000-10-16 Method for depositing nanolaminate thin films on sensitive surfaces
JP2001532259A JP4965782B2 (ja) 1999-10-15 2000-10-16 遷移金属炭化物の堆積
PCT/US2000/028537 WO2001029280A1 (en) 1999-10-15 2000-10-16 Deposition of transition metal carbides
PCT/US2000/028654 WO2001029893A1 (en) 1999-10-15 2000-10-16 Method for depositing nanolaminate thin films on sensitive surfaces
JP2001531142A JP4746234B2 (ja) 1999-10-15 2000-10-16 感受性表面上にナノラミネート薄膜を堆積するための方法
EP00973583A EP1221178A1 (de) 1999-10-15 2000-10-16 Verfahren zur abscheidung von nanolaminierten dünnschichten auf empfindlichen oberflächen
US10/210,715 US6821889B2 (en) 1999-10-15 2002-07-30 Production of elemental thin films using a boron-containing reducing agent
US10/246,131 US6800552B2 (en) 1999-10-15 2002-09-17 Deposition of transition metal carbides
US10/969,297 US7329590B2 (en) 1999-10-15 2004-10-19 Method for depositing nanolaminate thin films on sensitive surfaces
US10/990,424 US7144809B2 (en) 1999-10-15 2004-11-16 Production of elemental films using a boron-containing reducing agent
US11/288,872 US7749871B2 (en) 1999-10-15 2005-11-28 Method for depositing nanolaminate thin films on sensitive surfaces
US11/634,818 US7485340B2 (en) 1999-10-15 2006-12-05 Production of elemental films using a boron-containing reducing agent

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FI992234A FI117944B (fi) 1999-10-15 1999-10-15 Menetelmä siirtymämetallinitridiohutkalvojen kasvattamiseksi
FI992234 1999-10-15

Publications (2)

Publication Number Publication Date
FI19992234L FI19992234L (fi) 2001-04-16
FI117944B true FI117944B (fi) 2007-04-30

Family

ID=8555459

Family Applications (1)

Application Number Title Priority Date Filing Date
FI992234A FI117944B (fi) 1959-10-10 1999-10-15 Menetelmä siirtymämetallinitridiohutkalvojen kasvattamiseksi

Country Status (9)

Country Link
US (1) US6863727B1 (de)
EP (1) EP1242647B1 (de)
JP (1) JP4713041B2 (de)
KR (1) KR100744219B1 (de)
AU (1) AU7926800A (de)
DE (1) DE60004566T2 (de)
FI (1) FI117944B (de)
TW (1) TW541351B (de)
WO (1) WO2001027347A1 (de)

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