[go: up one dir, main page]

ES8303819A1 - Procedimiento para formar una capa de oxido de fosforo-silicato-cristail sobre la superficie de un sustrato de silicio. - Google Patents

Procedimiento para formar una capa de oxido de fosforo-silicato-cristail sobre la superficie de un sustrato de silicio.

Info

Publication number
ES8303819A1
ES8303819A1 ES508088A ES508088A ES8303819A1 ES 8303819 A1 ES8303819 A1 ES 8303819A1 ES 508088 A ES508088 A ES 508088A ES 508088 A ES508088 A ES 508088A ES 8303819 A1 ES8303819 A1 ES 8303819A1
Authority
ES
Spain
Prior art keywords
silicon substrate
phosphoric acid
silicate
procedure
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES508088A
Other languages
English (en)
Other versions
ES508088A0 (es
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Solarex Corp
Original Assignee
Solarex Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Solarex Corp filed Critical Solarex Corp
Publication of ES8303819A1 publication Critical patent/ES8303819A1/es
Publication of ES508088A0 publication Critical patent/ES508088A0/es
Granted legal-status Critical Current

Links

Classifications

    • H10P14/6923—
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/02—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the solid state
    • H10P14/6334—

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Surface Treatment Of Glass (AREA)
  • Photovoltaic Devices (AREA)

Abstract

PROCEDIMIENTO PARA DEPOSITAR SOBRE UNA LAMINA DE SILICIO UNA PELICULA ESENCIALMENTE CONTINUA DE ACIDO FOSFORICO, LA CUAL MEDIANTE UN TRATAMIENTO ULTERIOR FORMA UNA UNION ELECTRICA P-N. COMPRENDE LAS SIGUIENTES ETAPAS: PRIMERA, SE VAPORIZA ACIDO FOSFORICO MEDIANTE LA PULVERIZACION DE ACIDO FOSFORICO EN UN TUBO CALENTADO A UNA TEMPERATURA COMPRENDIDA ENTRE 400 Y 800 GRADOS, SIENDO PORTADO DICHO ACIDO FOSFORICO POR UN GAS INERTE; SEGUNDA, SE CONDENSA EL MENCIONADO VAPOR SOBRE LA SUPERFICIE DEL SUSTRATO DE SILICIO PAR FORMAR UNA PELICULA CONTINUA; Y POR ULTIMO, SE CALIENTA LA SUPERFICIE DEL SUSTRATO DE SILICIO PARA FORMAR UNA CAPA DE OXIDO DE FOSFORO-SILICATO-CRISTAL, CON UN ESPESOR COMPRENDIDO ENTRE 90 Y 200 A. DE APLICACION EN LA FABRICACION DE DISPOSITIVOS MICROELECTRONICOS, TALES COMO CELULAS SOLARES. L
ES508088A 1980-12-18 1981-12-17 Procedimiento para formar una capa de oxido de fosforo-silicato-cristail sobre la superficie de un sustrato de silicio. Granted ES508088A0 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/217,742 US4360393A (en) 1980-12-18 1980-12-18 Vapor deposition of H3 PO4 and formation of thin phosphorus layer on silicon substrates

Publications (2)

Publication Number Publication Date
ES8303819A1 true ES8303819A1 (es) 1983-02-01
ES508088A0 ES508088A0 (es) 1983-02-01

Family

ID=22812324

Family Applications (1)

Application Number Title Priority Date Filing Date
ES508088A Granted ES508088A0 (es) 1980-12-18 1981-12-17 Procedimiento para formar una capa de oxido de fosforo-silicato-cristail sobre la superficie de un sustrato de silicio.

Country Status (7)

Country Link
US (1) US4360393A (es)
BE (1) BE891509A (es)
ES (1) ES508088A0 (es)
FR (1) FR2496704A1 (es)
GB (1) GB2091709B (es)
IT (1) IT1142150B (es)
NL (1) NL8105737A (es)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60153119A (ja) * 1984-01-20 1985-08-12 Fuji Electric Corp Res & Dev Ltd 不純物拡散方法
ATE150584T1 (de) 1990-10-24 1997-04-15 Ase Americas Inc Verfahren und vorrichtung zum herstellen von übergängen durch diffusion in substrate von solarzellen
US5270248A (en) * 1992-08-07 1993-12-14 Mobil Solar Energy Corporation Method for forming diffusion junctions in solar cell substrates
JPH08153784A (ja) * 1994-11-28 1996-06-11 Nec Corp 半導体装置の製造方法
US6143633A (en) * 1995-10-05 2000-11-07 Ebara Solar, Inc. In-situ diffusion of dopant impurities during dendritic web growth of crystal ribbon
US7790574B2 (en) 2004-12-20 2010-09-07 Georgia Tech Research Corporation Boron diffusion in silicon devices
DE102005019686B3 (de) * 2005-04-22 2006-04-13 Schmid Technology Systems Gmbh Einrichtung und Verfahren zum Aufbringen einer gleichmäßigen, dünnen Flüssigkeitsschicht auf Substrate
US8659668B2 (en) 2005-10-07 2014-02-25 Rearden, Llc Apparatus and method for performing motion capture using a random pattern on capture surfaces
WO2008027956A2 (en) * 2006-08-31 2008-03-06 Despatch Industries Limited Partnership Continuous dopant addition
US10699944B2 (en) 2018-09-28 2020-06-30 Taiwan Semiconductor Manufacturing Company, Ltd. Surface modification layer for conductive feature formation

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3173802A (en) * 1961-12-14 1965-03-16 Bell Telephone Labor Inc Process for controlling gas phase composition
GB1037284A (en) * 1963-11-27 1966-07-27 Associated Semiconductor Mft Improvements in and relating to methods of heat treating semiconductor crystal bodies
DE1257989B (de) * 1964-07-09 1968-01-04 Telefunken Patent Verfahren zum Herstellen eines Silizium-Halbleiterkoerpers fuer eine Sonnenzelle
US3486951A (en) * 1967-06-16 1969-12-30 Corning Glass Works Method of manufacturing semiconductor devices
DE2754833A1 (de) * 1977-12-09 1979-06-13 Ibm Deutschland Phosphordiffusionsverfahren fuer halbleiteranwendungen

Also Published As

Publication number Publication date
GB2091709A (en) 1982-08-04
IT1142150B (it) 1986-10-08
US4360393A (en) 1982-11-23
BE891509A (fr) 1982-06-17
FR2496704B1 (es) 1984-11-30
ES508088A0 (es) 1983-02-01
IT8125705A0 (it) 1981-12-18
NL8105737A (nl) 1982-07-16
GB2091709B (en) 1984-12-05
FR2496704A1 (fr) 1982-06-25

Similar Documents

Publication Publication Date Title
ES8303819A1 (es) Procedimiento para formar una capa de oxido de fosforo-silicato-cristail sobre la superficie de un sustrato de silicio.
ES8300101A1 (es) Procedimiento para la obtencion de 2-oxidos de 1,2,5-oxadiazol 3,4-bis-sustituidos.
ES2088793T3 (es) Un metodo de fabricar componentes semiconductores asi como una celula solar fabricada a partir de los mismos.
ES8106817A1 (es) Un metodo para aplicar un revestimiento antirreflejante so- bre silicio
JPS5693375A (en) Photoelectric conversion device
JPS5467778A (en) Production of semiconductor device
CN104993009A (zh) 补偿掺杂阻挡杂质带太赫兹探测器芯片及其制备方法
CN103700731B (zh) 一种可转移碲镉汞薄膜的制备方法
JPS5659694A (en) Manufacture of thin film
JPS5713760A (en) Semiconductor device and manufacture thereof
JPS5646522A (en) Semiconductor device and manufacture thereof
JPS5214367A (en) Semiconductor device on which the phosphosilicate glass layer is formed
JPS5717158A (en) Manufacture of semiconductor device
JPS542070A (en) Manufacture for semiconductor element
JPS54109765A (en) Manufacture of semiconductor device
JPS55133556A (en) Planar semiconductor device and method of fabricating the same
JPS57201015A (en) Manufacture of semiconductor device
JPS57111020A (en) Manufacture of semiconductor device
JPS54157496A (en) Manufacture of tunnel junction
JPS56135967A (en) Manufacture of semiconductor device
JPS5629383A (en) Manufacture of tunnel-junction type josephson element
JPS53105385A (en) Manufacture for semiconductor
JPS5688374A (en) Evaporated thin film diode
JPS54105982A (en) Mis-type semiconductor device and its manufacture
JPS5693380A (en) Manufacture of photoelectric conversion device