[go: up one dir, main page]

ES554331A0 - Celula montada por la tecnica de semiconductor de oxido metalico complementario - Google Patents

Celula montada por la tecnica de semiconductor de oxido metalico complementario

Info

Publication number
ES554331A0
ES554331A0 ES554331A ES554331A ES554331A0 ES 554331 A0 ES554331 A0 ES 554331A0 ES 554331 A ES554331 A ES 554331A ES 554331 A ES554331 A ES 554331A ES 554331 A0 ES554331 A0 ES 554331A0
Authority
ES
Spain
Prior art keywords
transistors
cell
resistor
metal oxide
oxide semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
ES554331A
Other languages
English (en)
Other versions
ES8704674A1 (es
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Siemens Corp
Original Assignee
Siemens AG
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG, Siemens Corp filed Critical Siemens AG
Publication of ES554331A0 publication Critical patent/ES554331A0/es
Publication of ES8704674A1 publication Critical patent/ES8704674A1/es
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/90—Masterslice integrated circuits
    • H10D84/903—Masterslice integrated circuits comprising field effect technology
    • H10D84/907—CMOS gate arrays
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/923—Active solid-state devices, e.g. transistors, solid-state diodes with means to optimize electrical conductor current carrying capacity, e.g. particular conductor aspect ratio

Landscapes

  • Design And Manufacture Of Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Medicines Containing Antibodies Or Antigens For Use As Internal Diagnostic Agents (AREA)
  • Immobilizing And Processing Of Enzymes And Microorganisms (AREA)
  • Fuel Cell (AREA)
  • Pyridine Compounds (AREA)
  • Element Separation (AREA)
  • Luminescent Compositions (AREA)
  • Bipolar Transistors (AREA)
  • Preparation Of Compounds By Using Micro-Organisms (AREA)
ES554331A 1985-04-24 1986-04-24 Celula montada por la tecnica de semiconductor de oxido metalico complementario Expired ES8704674A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE3514849 1985-04-24

Publications (2)

Publication Number Publication Date
ES554331A0 true ES554331A0 (es) 1987-04-01
ES8704674A1 ES8704674A1 (es) 1987-04-01

Family

ID=6269024

Family Applications (1)

Application Number Title Priority Date Filing Date
ES554331A Expired ES8704674A1 (es) 1985-04-24 1986-04-24 Celula montada por la tecnica de semiconductor de oxido metalico complementario

Country Status (12)

Country Link
US (1) US4839710A (es)
EP (1) EP0199231B1 (es)
JP (1) JPS61248551A (es)
AT (1) ATE57793T1 (es)
DE (1) DE3675064D1 (es)
DK (1) DK185186A (es)
ES (1) ES8704674A1 (es)
FI (1) FI861408L (es)
GR (1) GR861056B (es)
IE (1) IE57450B1 (es)
NO (1) NO861166L (es)
PT (1) PT82439B (es)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2786467B2 (ja) * 1989-03-15 1998-08-13 沖電気工業株式会社 Ｃｍｏｓ半導体集積回路
US5281835A (en) * 1989-06-14 1994-01-25 Fujitsu Limited Semi-custom integrated circuit device
JPH05315448A (ja) * 1992-04-27 1993-11-26 Nec Corp 集積回路装置およびそのレイアウト方法
US5367187A (en) * 1992-12-22 1994-11-22 Quality Semiconductor, Inc. Master slice gate array integrated circuits with basic cells adaptable for both input/output and logic functions
JP3719618B2 (ja) * 1996-06-17 2005-11-24 松下電器産業株式会社 半導体装置及びその製造方法
US6180984B1 (en) 1998-12-23 2001-01-30 Honeywell Inc. Integrated circuit impedance device and method of manufacture therefor

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4399417A (en) * 1980-06-06 1983-08-16 Bell Telephone Laboratories, Incorporated Integrated CRC filter circuit
JPS587854A (ja) * 1981-07-06 1983-01-17 Nippon Telegr & Teleph Corp <Ntt> 相補型ｍｉｓ回路装置及びそれを有する半導体集積回路装置
JPS59135745A (ja) * 1983-01-24 1984-08-04 Hitachi Ltd 半導体集積回路装置
JPS6047441A (ja) * 1983-08-26 1985-03-14 Fujitsu Ltd 半導体集積回路
JPS6074644A (ja) * 1983-09-30 1985-04-26 Fujitsu Ltd Ｃｍｏｓゲ−トアレ−

Also Published As

Publication number Publication date
FI861408A7 (fi) 1986-10-25
US4839710A (en) 1989-06-13
DE3675064D1 (de) 1990-11-29
ES8704674A1 (es) 1987-04-01
PT82439B (pt) 1992-07-31
FI861408L (fi) 1986-10-25
FI861408A0 (fi) 1986-04-01
DK185186D0 (da) 1986-04-22
IE861081L (en) 1986-10-24
JPS61248551A (ja) 1986-11-05
NO861166L (no) 1986-10-27
IE57450B1 (en) 1992-09-09
EP0199231A1 (de) 1986-10-29
EP0199231B1 (de) 1990-10-24
GR861056B (en) 1986-08-19
ATE57793T1 (de) 1990-11-15
PT82439A (de) 1986-05-01
DK185186A (da) 1986-10-25

Similar Documents

Publication Publication Date Title
DE68910458D1 (de) Monolithischer Zweiwegschalter mit MOS-Leistungstransistoren.
DE3576612D1 (de) Halbleiteranordnung mit mos-transistoren.
DE3581282D1 (de) Inhaltsadressierte halbleiterspeichermatrizen.
DE3583119D1 (de) Bipolartransistor mit heterouebergang.
NL193296B (nl) EPROM-geheugenmatrix met symmetrische elementaire MOS-cellen.
DE3587592D1 (de) Halbleiterspeicheranordnung mit Leseverstärkern.
DE3782748D1 (de) Feldeffekttransistor mit isoliertem gate.
SE7710302L (sv) Felteffekttransistor
ES554331A0 (es) Celula montada por la tecnica de semiconductor de oxido metalico complementario
KR940020424A (ko) 정적 반도체 기억 장치
EP0270219A3 (en) Reduced parallel exclusive or and exclusive nor gate
KR840000987A (ko) 반도체 스위칭 장치
DE3482528D1 (de) In c-mos-technik realisierte basiszelle.
DE3851419D1 (de) MOS-Transistor mit erhöhtem Isolationsvermögen.
DE3582004D1 (de) Basisgekoppelte transistorlogik.
DE3780895D1 (de) Komplementaerer feldeffekt-transistor mit isoliertem gate.
ATE29795T1 (de) Statische speicherzelle.
KR920015591A (ko) 전하결합소자
DE3677627D1 (de) Halbleiteranordnung mit isoliertem gate.
IT8683653A0 (it) Amplificatore differenziale utilizzante transistori mos con canale dello stesso tipo.
DE3865432D1 (de) Gatterschaltung mit mos-transistoren.
DE68924495D1 (de) Halbleiter-Bauelement mit verbesserter Gate-Kapazität und dessen Herstellungsverfahren.
DE3684981D1 (de) Sowohl als n-kanal-mos-transistor als auch als p-kanal-mos-transistor verwendbare mos-leistungsvorrichtung.
ES546353A0 (es) Perfeccionamientos en una estructura de transistor de semi- conductor de oxido metalico
DE69009221D1 (de) MOS-Speicherzelle mit einem exponentiellen Dotierungsprofil und mit versetztem Tunneloxid des schwebenden Gates.

Legal Events

Date Code Title Description
MM4A Patent lapsed

Effective date: 19960401