ES534128A0 - Perfeccionamientos en los sistemas supresores de sobretensiones y metodo de fabricacion correspondiente - Google Patents
Perfeccionamientos en los sistemas supresores de sobretensiones y metodo de fabricacion correspondienteInfo
- Publication number
- ES534128A0 ES534128A0 ES534128A ES534128A ES534128A0 ES 534128 A0 ES534128 A0 ES 534128A0 ES 534128 A ES534128 A ES 534128A ES 534128 A ES534128 A ES 534128A ES 534128 A0 ES534128 A0 ES 534128A0
- Authority
- ES
- Spain
- Prior art keywords
- surge suppression
- corresponding manufacturing
- suppression systems
- systems
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 230000001629 suppression Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/40—Resistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/60—Impurity distributions or concentrations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H10D8/80—PNPN diodes, e.g. Shockley diodes or break-over diodes
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| IT8322338A IT1212767B (it) | 1983-07-29 | 1983-07-29 | Soppressore di sovratensioni a semiconduttore con tensione d'innesco predeterminabile con precisione. |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| ES534128A0 true ES534128A0 (es) | 1986-03-16 |
| ES8605126A1 ES8605126A1 (es) | 1986-03-16 |
Family
ID=11194880
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| ES534128A Expired ES8605126A1 (es) | 1983-07-29 | 1984-07-09 | Perfeccionamientos en los sistemas supresores de sobretensiones y metodo de fabricacion correspondiente |
Country Status (11)
| Country | Link |
|---|---|
| US (1) | US4631561A (es) |
| JP (1) | JPH0736440B2 (es) |
| KR (1) | KR920005539B1 (es) |
| BR (1) | BR8403468A (es) |
| CA (1) | CA1218759A (es) |
| DE (1) | DE3428067C2 (es) |
| ES (1) | ES8605126A1 (es) |
| FR (1) | FR2550013B1 (es) |
| GB (1) | GB2144267B (es) |
| IT (1) | IT1212767B (es) |
| SE (1) | SE457303B (es) |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5083185A (en) * | 1985-02-15 | 1992-01-21 | Agency Of Industrial Science & Technology, Ministry Of International Trade & Industry | Surge absorption device |
| US4705322A (en) * | 1985-07-05 | 1987-11-10 | American Telephone And Telegraph Company, At&T Bell Laboratories | Protection of inductive load switching transistors from inductive surge created overvoltage conditions |
| IT1186337B (it) * | 1985-10-29 | 1987-11-26 | Sgs Microelettronica Spa | Dispositivo elettronico per la protezione di circuiti integrati da cariche elettrostatiche,e procedimento per la sua fabbricazione |
| JPS62110435A (ja) * | 1985-11-04 | 1987-05-21 | シ−メンス、アクチエンゲゼルシヤフト | 加入者線の過電圧保護用集積回路装置 |
| US4766469A (en) * | 1986-01-06 | 1988-08-23 | Siliconix Incorporated | Integrated buried zener diode and temperature compensation transistor |
| JPH0666462B2 (ja) * | 1987-12-21 | 1994-08-24 | 日本電気株式会社 | 半導体保護素子 |
| US4969027A (en) * | 1988-07-18 | 1990-11-06 | General Electric Company | Power bipolar transistor device with integral antisaturation diode |
| US5285100A (en) * | 1988-07-22 | 1994-02-08 | Texas Instruments Incorporated | Semiconductor switching device |
| GB2221088B (en) * | 1988-07-22 | 1992-02-26 | Texas Instruments Ltd | A semiconductor switching device |
| US5072273A (en) * | 1990-05-04 | 1991-12-10 | David Sarnoff Research Center, Inc. | Low trigger voltage SCR protection device and structure |
| US5274262A (en) * | 1989-05-17 | 1993-12-28 | David Sarnoff Research Center, Inc. | SCR protection structure and circuit with reduced trigger voltage |
| JP2551152B2 (ja) * | 1989-06-29 | 1996-11-06 | 富士電機株式会社 | Mosコントロールサイリスタ |
| US5172208A (en) * | 1990-07-30 | 1992-12-15 | Texas Instruments Incorporated | Thyristor |
| JPH0485963A (ja) * | 1990-07-30 | 1992-03-18 | Nec Corp | 半導体保護素子 |
| US5240865A (en) * | 1990-07-30 | 1993-08-31 | Texas Instruments Incorporated | Method of forming a thyristor on an SOI substrate |
| JPH077837B2 (ja) * | 1990-11-29 | 1995-01-30 | 工業技術院長 | サージ防護デバイス |
| JPH0793424B2 (ja) * | 1992-03-27 | 1995-10-09 | 工業技術院長 | サージ防護デバイス |
| US5600160A (en) * | 1993-04-14 | 1997-02-04 | Hvistendahl; Douglas D. | Multichannel field effect device |
| US5602404A (en) * | 1995-01-18 | 1997-02-11 | National Semiconductor Corporation | Low voltage triggering silicon controlled rectifier structures for ESD protection |
| US5610079A (en) * | 1995-06-19 | 1997-03-11 | Reliance Electric Industrial Company | Self-biased moat for parasitic current suppression in integrated circuits |
| US5747834A (en) * | 1995-09-29 | 1998-05-05 | Texas Instruments Inc | Adjustable Bipolar SCR holding voltage for ESD protection circuits in high speed Bipolar/BiCMOS circuits |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3146135A (en) * | 1959-05-11 | 1964-08-25 | Clevite Corp | Four layer semiconductive device |
| GB1030050A (en) * | 1963-11-13 | 1966-05-18 | Motorola Inc | Punchthrough breakdown rectifier |
| US3236698A (en) * | 1964-04-08 | 1966-02-22 | Clevite Corp | Semiconductive device and method of making the same |
| GB1232812A (es) * | 1968-02-02 | 1971-05-19 | ||
| GB1365392A (en) * | 1971-02-23 | 1974-09-04 | Microsystems Int Ltd | Semiconductor switching device |
| US3735210A (en) * | 1971-06-07 | 1973-05-22 | Rca Corp | Zener diode for monolithic integrated circuits |
| BE787597A (fr) * | 1971-08-16 | 1973-02-16 | Siemens Ag | Thyristor |
| US3881179A (en) * | 1972-08-23 | 1975-04-29 | Motorola Inc | Zener diode structure having three terminals |
| DE2310570C3 (de) * | 1973-03-02 | 1980-08-07 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Verfahren zum Herstellen eines überkopfzündfesten Thyristors |
| JPS50782A (es) * | 1973-05-02 | 1975-01-07 | ||
| JPS502482A (es) * | 1973-05-08 | 1975-01-11 | ||
| JPS508486A (es) * | 1973-05-21 | 1975-01-28 | ||
| DE2506102C3 (de) * | 1975-02-13 | 1982-03-25 | Siemens AG, 1000 Berlin und 8000 München | Halbleitergleichrichter |
| JPS52104075A (en) * | 1976-02-27 | 1977-09-01 | Toshiba Corp | Semiconductor element |
| JPS54111790A (en) * | 1978-02-22 | 1979-09-01 | Hitachi Ltd | Semiconductor switchgear |
| DE2928685A1 (de) * | 1978-07-20 | 1980-01-31 | Electric Power Res Inst | Thyristor mit gesteuertem strom bei spannungsdurchbruch und verfahren zur begrenzung des durchbruchstroms in durchlassrichtung durch einen thyristor |
| YU43752B (en) * | 1978-10-16 | 1989-12-31 | Marko Petrovic | Transistorized voltage limiter |
| GB2088634B (en) * | 1980-12-03 | 1984-08-15 | Rca Corp | Protection circuit for integrated circuit devices |
-
1983
- 1983-07-29 IT IT8322338A patent/IT1212767B/it active
-
1984
- 1984-07-09 ES ES534128A patent/ES8605126A1/es not_active Expired
- 1984-07-11 BR BR8403468A patent/BR8403468A/pt not_active IP Right Cessation
- 1984-07-18 GB GB08418287A patent/GB2144267B/en not_active Expired
- 1984-07-18 KR KR1019840004203A patent/KR920005539B1/ko not_active Expired
- 1984-07-23 US US06/633,434 patent/US4631561A/en not_active Expired - Lifetime
- 1984-07-25 SE SE8403852A patent/SE457303B/sv not_active IP Right Cessation
- 1984-07-26 FR FR8411874A patent/FR2550013B1/fr not_active Expired
- 1984-07-27 CA CA000459900A patent/CA1218759A/en not_active Expired
- 1984-07-27 JP JP59155706A patent/JPH0736440B2/ja not_active Expired - Lifetime
- 1984-07-30 DE DE3428067A patent/DE3428067C2/de not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6057668A (ja) | 1985-04-03 |
| KR920005539B1 (ko) | 1992-07-06 |
| IT8322338A0 (it) | 1983-07-29 |
| DE3428067C2 (de) | 1994-02-17 |
| DE3428067A1 (de) | 1985-02-07 |
| IT1212767B (it) | 1989-11-30 |
| SE8403852D0 (sv) | 1984-07-25 |
| SE457303B (sv) | 1988-12-12 |
| SE8403852L (sv) | 1985-01-30 |
| KR850000815A (ko) | 1985-03-09 |
| GB2144267A (en) | 1985-02-27 |
| BR8403468A (pt) | 1985-06-25 |
| FR2550013A1 (fr) | 1985-02-01 |
| US4631561A (en) | 1986-12-23 |
| ES8605126A1 (es) | 1986-03-16 |
| GB2144267B (en) | 1987-04-23 |
| GB8418287D0 (en) | 1984-08-22 |
| FR2550013B1 (fr) | 1987-08-07 |
| JPH0736440B2 (ja) | 1995-04-19 |
| CA1218759A (en) | 1987-03-03 |
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