ES493930A0 - Procedimiento de realizacion de una capa que contiene sili- cio en un dispositivo electronico - Google Patents
Procedimiento de realizacion de una capa que contiene sili- cio en un dispositivo electronicoInfo
- Publication number
- ES493930A0 ES493930A0 ES493930A ES493930A ES493930A0 ES 493930 A0 ES493930 A0 ES 493930A0 ES 493930 A ES493930 A ES 493930A ES 493930 A ES493930 A ES 493930A ES 493930 A0 ES493930 A0 ES 493930A0
- Authority
- ES
- Spain
- Prior art keywords
- procedure
- construction
- electronic device
- layer containing
- containing silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000010276 construction Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 229910052710 silicon Inorganic materials 0.000 title 1
- 239000010703 silicon Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
- H10F71/103—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7919972A FR2462782A1 (fr) | 1979-08-03 | 1979-08-03 | Procede de realisation d'une couche contenant du silicium et dispositif de conversion photoelectrique mettant en oeuvre ce procede |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| ES8200512A1 ES8200512A1 (es) | 1981-10-16 |
| ES493930A0 true ES493930A0 (es) | 1981-10-16 |
Family
ID=9228611
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| ES493930A Granted ES493930A0 (es) | 1979-08-03 | 1980-08-01 | Procedimiento de realizacion de una capa que contiene sili- cio en un dispositivo electronico |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US4321420A (es) |
| EP (1) | EP0024378B1 (es) |
| JP (1) | JPS5624982A (es) |
| DE (1) | DE3066689D1 (es) |
| ES (1) | ES493930A0 (es) |
| FR (1) | FR2462782A1 (es) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57160174A (en) * | 1981-03-30 | 1982-10-02 | Hitachi Ltd | Thin film solar battery |
| US4490208A (en) * | 1981-07-08 | 1984-12-25 | Agency Of Industrial Science And Technology | Method of producing thin films of silicon |
| EP0143222B1 (de) * | 1983-09-30 | 1987-11-11 | BBC Aktiengesellschaft Brown, Boveri & Cie. | Glühkathode mit hohem Emissionsvermögen für eine Elektronenröhre und Verfahren zu deren Herstellung |
| US5151383A (en) * | 1983-12-30 | 1992-09-29 | International Business Machines Corporation | Method for producing high energy electroluminescent devices |
| US5221643A (en) * | 1989-02-21 | 1993-06-22 | Siemens Aktiengesellschaft | Method for producing polycrystalline semiconductor material by plasma-induced vapor phase deposition using activated hydrogen |
| US5766344A (en) * | 1991-09-21 | 1998-06-16 | Semiconductor Energy Laboratory Co., Ltd. | Method for forming a semiconductor |
| JPH11354820A (ja) * | 1998-06-12 | 1999-12-24 | Sharp Corp | 光電変換素子及びその製造方法 |
| RU2155158C1 (ru) * | 1999-10-07 | 2000-08-27 | Институт химии высокочистых веществ РАН | Способ получения моноизотопного кремния si28 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4064521A (en) * | 1975-07-28 | 1977-12-20 | Rca Corporation | Semiconductor device having a body of amorphous silicon |
| CA1078078A (en) * | 1976-03-22 | 1980-05-20 | David E. Carlson | Schottky barrier semiconductor device and method of making same |
| FR2394173A1 (fr) * | 1977-06-06 | 1979-01-05 | Thomson Csf | Procede de fabrication de dispositifs electroniques qui comportent une couche mince de silicium amorphe et dispositif electronique obtenu par un tel procede |
-
1979
- 1979-08-03 FR FR7919972A patent/FR2462782A1/fr active Granted
-
1980
- 1980-07-11 EP EP80401051A patent/EP0024378B1/fr not_active Expired
- 1980-07-11 DE DE8080401051T patent/DE3066689D1/de not_active Expired
- 1980-07-29 US US06/173,431 patent/US4321420A/en not_active Expired - Lifetime
- 1980-07-31 JP JP10583080A patent/JPS5624982A/ja active Pending
- 1980-08-01 ES ES493930A patent/ES493930A0/es active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5624982A (en) | 1981-03-10 |
| FR2462782A1 (fr) | 1981-02-13 |
| ES8200512A1 (es) | 1981-10-16 |
| US4321420A (en) | 1982-03-23 |
| EP0024378A1 (fr) | 1981-03-04 |
| DE3066689D1 (en) | 1984-03-29 |
| FR2462782B1 (es) | 1983-04-15 |
| EP0024378B1 (fr) | 1984-02-22 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FD1A | Patent lapsed |
Effective date: 19980401 |