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ES480925A1 - Un proceso para incorporar pistas de aluminio sobre un cuer-po semiconductor. - Google Patents

Un proceso para incorporar pistas de aluminio sobre un cuer-po semiconductor.

Info

Publication number
ES480925A1
ES480925A1 ES480925A ES480925A ES480925A1 ES 480925 A1 ES480925 A1 ES 480925A1 ES 480925 A ES480925 A ES 480925A ES 480925 A ES480925 A ES 480925A ES 480925 A1 ES480925 A1 ES 480925A1
Authority
ES
Spain
Prior art keywords
semiconductor body
tracks onto
aluminum tracks
incorporate aluminum
aluminum
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES480925A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nokia Spain SA
Original Assignee
Alcatel Espana SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Alcatel Espana SA filed Critical Alcatel Espana SA
Publication of ES480925A1 publication Critical patent/ES480925A1/es
Expired legal-status Critical Current

Links

Classifications

    • H10P70/12—
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
    • C23C16/0245—Pretreatment of the material to be coated by cleaning or etching by etching with a plasma
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • C23C16/20—Deposition of aluminium only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45561—Gas plumbing upstream of the reaction chamber
    • H10P14/43—

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Physics & Mathematics (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

Un proceso para incorporar pistas de aluminio sobre un cuerpo semiconductor, que incluye, la activación de la superficie del cuerpo en una descarga de hidrógeno, la deposición de aluminio sobre la superficie activada mediante descomposición térmica de aluminio tri- isobutilo (TIBA) suministrado en forma de vapor a una cámara de reacción mantenida a una temperatura en el margen de 250-270ºC y el ataque selectivo del aluminio para definir las pistas conductoras, y en dónde el TIBA, antes de entrar en la cámara de reacción, se mantiene a una temperatura por debajo de los 90º.
ES480925A 1978-05-25 1979-05-25 Un proceso para incorporar pistas de aluminio sobre un cuer-po semiconductor. Expired ES480925A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB22632/78A GB1595659A (en) 1978-05-25 1978-05-25 Providing conductive tracks on semiconductor devices

Publications (1)

Publication Number Publication Date
ES480925A1 true ES480925A1 (es) 1980-01-01

Family

ID=10182578

Family Applications (1)

Application Number Title Priority Date Filing Date
ES480925A Expired ES480925A1 (es) 1978-05-25 1979-05-25 Un proceso para incorporar pistas de aluminio sobre un cuer-po semiconductor.

Country Status (6)

Country Link
US (1) US4460618A (es)
JP (1) JPS54154291A (es)
ES (1) ES480925A1 (es)
FR (1) FR2426745A1 (es)
GB (1) GB1595659A (es)
IT (1) IT1192728B (es)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5985857A (ja) * 1982-11-08 1984-05-17 Semiconductor Energy Lab Co Ltd アルミニユ−ム被膜の作製方法
US4585672A (en) * 1983-03-21 1986-04-29 Syracuse University Hydrogen charged thin film conductor
JPS61245523A (ja) * 1985-04-23 1986-10-31 Fujitsu Ltd アルミニウム膜の成長方法
JPH0635657B2 (ja) * 1985-05-03 1994-05-11 アメリカン テレフオン アンド テレグラフ カムパニ− パタ−ン化されたアルミニウム層を有するデバイスの製造方法
JPS61272379A (ja) * 1985-05-27 1986-12-02 Fujitsu Ltd アルミニウムのｃｖｄ方法
JPS6211227A (ja) * 1985-07-09 1987-01-20 Fujitsu Ltd 半導体装置の製造方法
JP2559703B2 (ja) * 1986-04-11 1996-12-04 富士通株式会社 配線膜のエピタキシヤル成長方法
US4839715A (en) * 1987-08-20 1989-06-13 International Business Machines Corporation Chip contacts without oxide discontinuities
US4913789A (en) * 1988-04-18 1990-04-03 Aung David K Sputter etching and coating process
JP2721023B2 (ja) * 1989-09-26 1998-03-04 キヤノン株式会社 堆積膜形成法
JPH03114266A (ja) * 1990-09-13 1991-05-15 Semiconductor Energy Lab Co Ltd アルミニューム被膜
US5149596A (en) * 1990-10-05 1992-09-22 The United States Of America As Represented By The United States Department Of Energy Vapor deposition of thin films
JPH04221822A (ja) * 1990-12-21 1992-08-12 Kazuo Tsubouchi 堆積膜形成法
JP3048749B2 (ja) * 1992-04-28 2000-06-05 キヤノン株式会社 薄膜形成方法
US5995396A (en) * 1997-12-16 1999-11-30 Lucent Technologies Inc. Hybrid standby power system, method of operation thereof and telecommunications installation employing the same
US5985375A (en) * 1998-09-03 1999-11-16 Micron Technology, Inc. Method for pulsed-plasma enhanced vapor deposition
US8796851B2 (en) 2012-01-05 2014-08-05 Taiwan Semiconductor Manufacturing Company, Ltd. Bonding pad and method of making same

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2867546A (en) * 1956-02-08 1959-01-06 Ohio Commw Eng Co Gas plating of aluminum using aluminum trilsobutyl
US2921868A (en) * 1956-06-07 1960-01-19 Union Carbide Corp Aluminum gas plating of various substrates
DE1267054B (de) * 1958-09-10 1968-04-25 Union Carbide Corp Gasplattierungsverfahren zur Erzeugung von Aluminiumueberzuegen
US2990295A (en) * 1958-11-07 1961-06-27 Union Carbide Corp Deposition of aluminum
US2929739A (en) * 1958-11-07 1960-03-22 Union Carbide Corp Aluminum plating
US3041197A (en) * 1959-06-01 1962-06-26 Berger Carl Coating surfaces with aluminum
DE1235106B (de) * 1960-02-29 1967-02-23 Union Carbide Corp Verfahren zur Gasplattierung von Aluminium auf erhitzte Gegenstaende
US3188230A (en) * 1961-03-16 1965-06-08 Alloyd Corp Vapor deposition process and device
US3158499A (en) * 1961-07-07 1964-11-24 Union Carbide Corp Method of depositing metal coatings in holes, tubes, cracks, fissures and the like
US3282243A (en) * 1965-09-08 1966-11-01 Ethyl Corp Movable means comprising vapor-plating nozzle and exhaust
US3402067A (en) * 1965-09-24 1968-09-17 Engelhard Ind Inc Method for depositing aluminum film
US3615956A (en) * 1969-03-27 1971-10-26 Signetics Corp Gas plasma vapor etching process
BE758258A (fr) * 1969-11-01 1971-04-01 Sumitomo Chemical Co Procede de depot d'aluminium
GB1352619A (en) * 1970-08-21 1974-05-08 Motorola Inc Thin film resistor
DE2242875A1 (de) * 1971-10-13 1973-04-19 Ibm Metallisierungs- und kontaktanordnung bei monolithischen halbleiteranordnungen und verfahren zu deren herstellung
JPS4911540A (es) * 1972-05-31 1974-02-01
JPS4911541A (es) * 1972-06-01 1974-02-01
JPS5443872B2 (es) * 1972-09-18 1979-12-22
DE2309506A1 (de) * 1973-02-26 1974-08-29 Siemens Ag Verfahren zur herstellung von anschluss- und kontaktflaechen durch metallabscheidung aus der gasphase
US3994793A (en) * 1975-05-22 1976-11-30 International Business Machines Corporation Reactive ion etching of aluminum
JPS5810988B2 (ja) * 1975-05-23 1983-02-28 株式会社日立製作所 キソウカガクハンノウホウシキ
US4031274A (en) * 1975-10-14 1977-06-21 General Electric Company Method for coating cavities with metal
LU74666A1 (es) * 1976-03-29 1977-10-10

Also Published As

Publication number Publication date
FR2426745A1 (fr) 1979-12-21
FR2426745B1 (es) 1983-08-26
IT7922733A0 (it) 1979-05-17
IT1192728B (it) 1988-05-04
US4460618A (en) 1984-07-17
JPS54154291A (en) 1979-12-05
JPH0234166B2 (es) 1990-08-01
GB1595659A (en) 1981-08-12

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Legal Events

Date Code Title Description
FD1A Patent lapsed

Effective date: 19991007