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ES466564A1 - Un dispositivo semiconductor que tiene un elemento de memo- ria semiconductora - Google Patents

Un dispositivo semiconductor que tiene un elemento de memo- ria semiconductora

Info

Publication number
ES466564A1
ES466564A1 ES466564A ES466564A ES466564A1 ES 466564 A1 ES466564 A1 ES 466564A1 ES 466564 A ES466564 A ES 466564A ES 466564 A ES466564 A ES 466564A ES 466564 A1 ES466564 A1 ES 466564A1
Authority
ES
Spain
Prior art keywords
region
field effect
effect transistor
main electrode
conductivity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES466564A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of ES466564A1 publication Critical patent/ES466564A1/es
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/35—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices with charge storage in a depletion layer, e.g. charge coupled devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/711—Insulated-gate field-effect transistors [IGFET] having floating bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
  • Non-Volatile Memory (AREA)

Abstract

Un dispositivo semiconductor que tiene un elemento de memoria semiconductor, particularmente adecuado para uso en una memoria de acceso aleatorio, dispositivo que comprende un cuerpo semiconductor dotado de una región superficial, contigua a superficie, de principalmente un determinado tipo de conductividad y dotado de un transistor de efecto de campo, denominado aquí primer transistor de efecto de campo, el cual comprende dos regiones de electrodo principal de un determinado tipo de conductividad entre las cuales hay una región de canal de un determinado tipo de conductividad, y una región de electrodo de mando, situada en superficie, por medio de la cual es posible inducir en el cuerpo de semiconductor una región de empobrecimiento, que se extiende entrando por lo menos en la región de canal, la cual constituye una región de almacenaje de carga en la que puede almacenarse información en forma de carga eléctrica, información que puede leerse de manera no destructiva por determinación de laconductividad en la región de canal comprendida entre las regiones de electrodo principal, estando dicho dispositivo caracterizado por el hecho de que el elemento comprende un transistor de efecto de campo de electrodo de mando o puerta aislado, denominado aquí segundo transistor de efecto de campo, que es del tipo complementario respecto al primer transistor de efecto de campo y que comprende dos regiones de electrodo principal, de las cuales una está formada por la parte del cuerpo de semiconductor que constituye la citada región de almacenaje de carga, y la otra región de electrodo principal está formada por una segunda región de superficie situada cerca de la región de almacenaje, comprendiendo el segundo transistor de efecto de campo por lo menos un electrodo de mando o puerta que está aislado de la superficie del cuerpo de semiconductor y que va eléctricamente acoplado a una de las regiones de electrodo principal del primer transistor de efecto de campo.
ES466564A 1977-02-04 1978-02-02 Un dispositivo semiconductor que tiene un elemento de memo- ria semiconductora Expired ES466564A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7701172A NL7701172A (nl) 1977-02-04 1977-02-04 Halfgeleidergeheugeninrichting.

Publications (1)

Publication Number Publication Date
ES466564A1 true ES466564A1 (es) 1979-01-16

Family

ID=19827917

Family Applications (1)

Application Number Title Priority Date Filing Date
ES466564A Expired ES466564A1 (es) 1977-02-04 1978-02-02 Un dispositivo semiconductor que tiene un elemento de memo- ria semiconductora

Country Status (14)

Country Link
US (1) US4161741A (es)
JP (1) JPS5846064B2 (es)
AU (1) AU512104B2 (es)
BE (1) BE863591A (es)
BR (1) BR7800627A (es)
DD (1) DD137161A5 (es)
DE (1) DE2804412C3 (es)
ES (1) ES466564A1 (es)
FR (1) FR2379877B1 (es)
GB (1) GB1594562A (es)
IT (1) IT1092499B (es)
NL (1) NL7701172A (es)
RO (1) RO76120A (es)
SE (1) SE7801169L (es)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1602361A (en) * 1977-02-21 1981-11-11 Zaidan Hojin Handotai Kenkyu Semiconductor memory devices
JPH0160951B2 (es) * 1978-01-03 1989-12-26 Advanced Micro Devices Inc
JPS6037620B2 (ja) * 1979-12-11 1985-08-27 株式会社東芝 半導体記憶装置
US4335450A (en) * 1980-01-30 1982-06-15 International Business Machines Corporation Non-destructive read out field effect transistor memory cell system
CA1164562A (en) * 1980-10-08 1984-03-27 Manabu Itsumi Semiconductor memory device
US4593453A (en) * 1982-06-01 1986-06-10 Rockwell International Corporation Two-level transistor structures and method utilizing minimal area therefor
US4609429A (en) * 1984-07-02 1986-09-02 International Business Machines Corporation Process for making a small dynamic memory cell structure
US4753897A (en) * 1986-03-14 1988-06-28 Motorola Inc. Method for providing contact separation in silicided devices using false gate
US4908688A (en) * 1986-03-14 1990-03-13 Motorola, Inc. Means and method for providing contact separation in silicided devices
GB9115699D0 (en) * 1991-07-19 1991-09-04 Philips Electronic Associated An overvoltage protected semiconductor switch
US7729149B2 (en) * 2007-05-01 2010-06-01 Suvolta, Inc. Content addressable memory cell including a junction field effect transistor

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4075045A (en) * 1976-02-09 1978-02-21 International Business Machines Corporation Method for fabricating FET one-device memory cells with two layers of polycrystalline silicon and fabrication of integrated circuits containing arrays of the memory cells charge storage capacitors utilizing five basic pattern deliberating steps
US4063274A (en) * 1976-12-10 1977-12-13 Rca Corporation Integrated circuit device including both N-channel and P-channel insulated gate field effect transistors

Also Published As

Publication number Publication date
US4161741A (en) 1979-07-17
AU512104B2 (en) 1980-09-25
RO76120B (ro) 1983-05-30
RO76120A (ro) 1983-06-01
GB1594562A (en) 1981-07-30
BR7800627A (pt) 1978-10-10
JPS5397384A (en) 1978-08-25
AU3294578A (en) 1979-08-09
DD137161A5 (de) 1979-08-15
DE2804412C3 (de) 1982-03-18
IT1092499B (it) 1985-07-12
BE863591A (fr) 1978-08-02
SE7801169L (sv) 1978-08-05
DE2804412B2 (de) 1981-06-19
DE2804412A1 (de) 1978-08-10
IT7819890A0 (it) 1978-02-01
FR2379877A1 (fr) 1978-09-01
JPS5846064B2 (ja) 1983-10-14
FR2379877B1 (fr) 1986-02-14
NL7701172A (nl) 1978-08-08

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