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EP2004090A1 - Procede de traitement d'un materiau presentant des pores nanometriques - Google Patents

Procede de traitement d'un materiau presentant des pores nanometriques

Info

Publication number
EP2004090A1
EP2004090A1 EP07726331A EP07726331A EP2004090A1 EP 2004090 A1 EP2004090 A1 EP 2004090A1 EP 07726331 A EP07726331 A EP 07726331A EP 07726331 A EP07726331 A EP 07726331A EP 2004090 A1 EP2004090 A1 EP 2004090A1
Authority
EP
European Patent Office
Prior art keywords
substance
pores
nanoscale pores
nanoscale
mixture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP07726331A
Other languages
German (de)
English (en)
Inventor
Franz Laermer
Michael Stumber
Ralf Reichenbach
Dick Scholten
Christian Maeurer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Robert Bosch GmbH
Original Assignee
Robert Bosch GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Robert Bosch GmbH filed Critical Robert Bosch GmbH
Publication of EP2004090A1 publication Critical patent/EP2004090A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0021—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by liquid gases or supercritical fluids

Definitions

  • the present invention relates to a method and a device for the treatment of nanoscale pore-containing material according to claims 1 and 11.
  • support materials For the treatment, observation, research or even cultivation of living cells, the use of support materials is known, which can be equipped with a variety of agents.
  • the landfilling of active ingredients in nanoscale pores of a biocompatible material is known.
  • suitable for this porosified silicon is known.
  • HF flux acid
  • This attacks the silicon in a corresponding anodization process so that pores are formed on the surface of the silicon whose pore size and structure can be determined by varying different anodization parameters.
  • active ingredients from such a carrier body which is as uniform as possible and as precisely as possible, the formation of extremely small structured pores whose geometries are in the nanometer range is desired.
  • the present invention is therefore based on the object to improve the treatment of nanoscale pores, especially their surfaces.
  • the present invention relates to a method for the treatment of nanoscale pore-containing material, in particular of implant material for the treatment of living cells. It is characterized by the fact that the surface tension of a substance or mixture of substances intended for filling the volumes of the nanoscale pores is reduced.
  • This procedure is based on the finding that penetration into the smallest pores is thus also possible for fluids which under normal process conditions are unable to penetrate these regions poorly or at all.
  • the transfer of the substance or mixture of substances intended for penetration into the nanoscale pores into a supercritical state is particularly advantageous. This causes the substance or mixture used to take on properties that lie between them, the liquids and gases exhibit. In particular, in this case its surface tension can be reduced by powers, with certain substances, it can even be almost completely degraded, so that this substance can penetrate into the smallest structures of a surface depression in this state.
  • CO2 is proposed for use of the substance to be converted to a supercritical state.
  • CO2 has the advantage that it is non-toxic when in contact with living cells.
  • no disadvantageous effects for the further intended use of the carrier material purified therewith can be caused, in particular not on contact with living cells.
  • CO2 is a flux-acid (HF) solvent, so that it dissolves in its adhering flux acid due to its complete penetration into the smallest porous wells, removing it from the surface and completely out of the pore can carry.
  • HF flux-acid
  • CO2 converted in a supercritical state is well suited for the solution of nonpolar molecules.
  • SCCO2 supercritical state
  • an auxiliary solvent in particular a surfactant, can be added to the substance to be converted into the supercritical state so that a corresponding microemulsion is produced , there Mycelia form, which enclose the polar substance inside.
  • the substances which have been released, ie impurities or residues, are led out of a process chamber for carrying out the process and are precipitated in the gaseous state during expansion of the medium and collected by suitable means, such as filters or activated carbon. In this way, the residues released from the pores can be reliably discharged from the process.
  • the carrier material can be subjected to, for example, a substance modifying the surface properties of the nanoscale pores and / or a corresponding processing method.
  • a substance modifying the surface properties of the nanoscale pores and / or a corresponding processing method is particularly suitable for this purpose.
  • O 2 plasma to produce hydroxyl groups on a silicon surface in order to produce a very specific reaction with the pore surface coordinated with a substance to be introduced into the carrier material.
  • This is often a silicon surface, since this biocompatible material, for example, after penetration into a body is either harmlessly encapsulated in this, where it can be removed later if necessary, or degraded to harmless silica, which anyway in Body is present.
  • SCCO2 is proposed in a particularly preferred manner because of its non-toxic and highly non-polar substances with respect to non-polar substances. After penetration of this carrier medium into the pores, the active substances contained in it can be deposited therein, for example by attachment to the inner pore surfaces.
  • polar substances In order to introduce polar substances into the nanoscale pores, the addition of a surfactant to the substance reduced in its surface tension, in turn, according to the cleaning process described above, is preferably proposed.
  • polar substances can now be introduced from the outside into the interior of the nanoscale pores in the opposite direction of transport and, if appropriate, be deposited by depositing a chemical and / or physical reaction with the surface of the pore.
  • polar substances Especially good for those landfill types are suitable to the above-described treatment methods 0 2 ⁇ plasma acted on pore surfaces.
  • Another possibility for the separation of active substances in the interior of nanoscale pores can be realized by influencing the density of the substance or mixture of substances in the supercritical state. For this purpose, for example, by varying the pressure directly on the mass transport or on the
  • Solubility of the SCCO2 be acted upon. That is, first under a sufficiently high pressure, the substance to be introduced is dissolved in the SCCO2 and sufficiently long in time Loading transported to the deepest points of the porous structure. After the expiration of the time scheduled for this transport process, reducing the pressure reduces the density of the CO2 so that, due to the reduced solubility, the active substance to be deposited precipitates out of the CO2 and precipitates inside the nanoscale structures. Another way to influence the density of SCCO2 is to vary its temperature.
  • a device for the treatment of such nanoscale pore-containing material in particular of implant material for the treatment of living cells, is proposed below.
  • This device is characterized in particular by having means for reducing the surface tension of a substance intended for filling the volumes of the nanoscale pores or of a corresponding substance mixture.
  • such means may comprise an average pressure increasing and / or decreasing device, such as a high pressure pump, a compressor, or the like.
  • Means for influencing the temperature of the substance or mixture of substances to be converted into a supercritical state are also suitable, for example an electric heater.
  • this device may include appropriate retention and / or filter means for receiving discharged pollutants, optionally in combination with pressure and / or temperature-changing agents.
  • this device may include appropriate retention and / or filter means for receiving discharged pollutants, optionally in combination with pressure and / or temperature-changing agents.
  • the device may also be provided with means for introducing a surfactant into the device.
  • a surfactant for example, this may be a corresponding memory, a valve and / or a pressure control device, a metering device and optionally further control and / or control units act.
  • memory and / or pressure control means may also be provided for the substance whose surface tension is reduced.
  • FIG. 1 shows a flow chart for the symbolic representation of individual steps of a method for the treatment of material having nanoscale pores
  • Figure 2 is a schematic plan view of a nano-scale pore exhibiting material
  • Figure 3 is an enlarged view of a fragmentary view of Figure 2;
  • Figure 4 is a schematic representation of a device suitable for carrying out the method.
  • the flowchart 1 represents symbolically individual process steps 2 to 5 for carrying out a method for the treatment of nanoscale pore-containing material, in particular of implant material for the treatment of living cells.
  • the arrows 6 symbolize the transitions between the individual method steps 2 to 5.
  • the arrow 7 symbolizes an optionally to be performed repetition of the method step. 5
  • the surface tension of a substance 10 or substance mixture 10 is reduced, which is provided for filling the volume of nanoscale pores 9 of a material 8 (FIGS. 2, 3).
  • the surface tension becomes thereby reduced so much that the substance 10 can completely penetrate into the nanoscale pores 9.
  • the substance or the mixture of substances 10 is converted into a supercritical state for this purpose.
  • CO2 is particularly preferably used which, on the one hand, has no toxic effects with respect to living cells and, on the other hand, has very good dissolving properties with regard to residues or impurities to be removed from the nanoscale pores, for example resulting from the production process.
  • deposition residues from anodization processes for producing the nanostructured pores are to be applied here, such as, for example, hydrofluoric acid (HF) or HNO 3 or other diverse solvents which are not compatible with the organism and the like.
  • FIG. 2 serves to illustrate this process, as shown in FIG. 2 in the enlarged view.
  • a residue 11 or an impurity 11 which originates, for example, from the production process of the nanoscale pore 9, adheres to the enlarged view shown in sectional view.
  • the substance 10, preferably SCCO2, which is in the supercritical state, now has such a reduced surface tension that it can easily penetrate into the interior of this pore and dissolve the impurity contained therein and, as a result, discharge it from the pore 9.
  • the substance to be converted into a supercritical state can be used in accordance with process step 3 from FIG HiIfsatessmittel, in particular a surfactant are added.
  • This binds polar residues so that their polar side points inwards and their non-polar side faces outwards, which in turn allows a residue-free removal from the nanoscale pore.
  • a method step 4 corresponding to FIG. 1 can be carried out.
  • the material 8 provided as a carrier material for active substances can be exposed to an O 2 plasma for producing hydroxyl groups, for example on a silicon surface.
  • an O 2 plasma for producing hydroxyl groups for example on a silicon surface.
  • the method step 5 is carried out according to FIG. 1, in which an active substance 13 to be disposed of in the nanoscale pores 9 is added to the substance or substance mixture 10 acting as the carrier medium and to be displaced in the supercritical state.
  • an active substance 13 to be disposed of in the nanoscale pores 9 is added to the substance or substance mixture 10 acting as the carrier medium and to be displaced in the supercritical state.
  • a chemical and / or physical reaction between the substance 13 to be deposited and the surface 14 of the nanoscale pores 9 can be triggered for the deposition of the substance 13 to be deposited.
  • a device 15 for carrying out these method steps is shown schematically in a simplified embodiment as shown in FIG. It comprises, in addition to a pressure chamber 16 for receiving the nanosize pores 9 having material 8 means 17 for reducing the surface tension of a provided for filling the volumes of the nanoscale pores 9 substance 10.
  • These means 17 may include a high-pressure pump 18, a heater 19 and optionally further Control and / or regulating units 20 include.
  • CO 2 memory 21 and a memory 22 with the material to be deposited 13 are still shown. They are connected via lines 23, 24 and valves 25 and 26 to the unit 17. This in turn is connected via the line 27 with the chamber 16 in connection.
  • the monitoring of the entire system can be done for example by the control unit 28.
  • the pressure chamber 16 may comprise a heater 19 and optionally further control and / or regulating units 20.
  • auxiliary agents (co-solvents) 12 are added to increase the solubility of the active substance 13 in the carrier medium 10.

Landscapes

  • Materials For Medical Uses (AREA)
  • Micro-Organisms Or Cultivation Processes Thereof (AREA)
  • Apparatus Associated With Microorganisms And Enzymes (AREA)

Abstract

La présente invention concerne un procédé de traitement d'un matériau (8) présentant des pores nanométrique (9), notamment d'un matériau pour implantation pour le traitement de cellules vivantes. Le procédé est caractérisé en ce que la tension de surface d'un matériau (10) prévu pour remplir le volume des pores (9) nanométriques est réduite. La présente invention concerne également un dispositif destiné à la réalisation de ce procédé.
EP07726331A 2006-04-03 2007-02-12 Procede de traitement d'un materiau presentant des pores nanometriques Withdrawn EP2004090A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102006015382A DE102006015382A1 (de) 2006-04-03 2006-04-03 Verfahren zur Behandlung von nanoskalige Poren aufweisendem Material
PCT/EP2007/051308 WO2007115849A1 (fr) 2006-04-03 2007-02-12 Procede de traitement d'un materiau presentant des pores nanometriques

Publications (1)

Publication Number Publication Date
EP2004090A1 true EP2004090A1 (fr) 2008-12-24

Family

ID=37896035

Family Applications (1)

Application Number Title Priority Date Filing Date
EP07726331A Withdrawn EP2004090A1 (fr) 2006-04-03 2007-02-12 Procede de traitement d'un materiau presentant des pores nanometriques

Country Status (4)

Country Link
US (1) US20100009077A1 (fr)
EP (1) EP2004090A1 (fr)
DE (1) DE102006015382A1 (fr)
WO (1) WO2007115849A1 (fr)

Families Citing this family (1)

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Publication number Priority date Publication date Assignee Title
DE102015222247B4 (de) * 2015-11-11 2017-10-26 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren und Vorrichtung zum Bearbeiten von Kapillarrohren

Family Cites Families (9)

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Publication number Priority date Publication date Assignee Title
US7064070B2 (en) 1998-09-28 2006-06-20 Tokyo Electron Limited Removal of CMP and post-CMP residue from semiconductors using supercritical carbon dioxide process
US6425956B1 (en) * 2001-01-05 2002-07-30 International Business Machines Corporation Process for removing chemical mechanical polishing residual slurry
US6905556B1 (en) 2002-07-23 2005-06-14 Novellus Systems, Inc. Method and apparatus for using surfactants in supercritical fluid processing of wafers
US6989358B2 (en) * 2002-10-31 2006-01-24 Advanced Technology Materials, Inc. Supercritical carbon dioxide/chemical formulation for removal of photoresists
US20040198066A1 (en) * 2003-03-21 2004-10-07 Applied Materials, Inc. Using supercritical fluids and/or dense fluids in semiconductor applications
US7250374B2 (en) 2004-06-30 2007-07-31 Tokyo Electron Limited System and method for processing a substrate using supercritical carbon dioxide processing
US7008853B1 (en) * 2005-02-25 2006-03-07 Infineon Technologies, Ag Method and system for fabricating free-standing nanostructures
US8414908B2 (en) * 2005-04-28 2013-04-09 The Regents Of The University Of California Compositions comprising nanostructures for cell, tissue and artificial organ growth, and methods for making and using same
US20060254612A1 (en) * 2005-05-16 2006-11-16 Micron Technology, Inc. Polar fluid removal from surfaces using supercritical fluids

Non-Patent Citations (1)

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Title
See references of WO2007115849A1 *

Also Published As

Publication number Publication date
US20100009077A1 (en) 2010-01-14
DE102006015382A1 (de) 2007-10-04
WO2007115849A1 (fr) 2007-10-18

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