EP2048171A4 - INSULATING LAYER, ELECTRONIC DEVICE, FIELD EFFECT TRANSISTOR, AND POLYVINYLTHIOPHENOL - Google Patents

INSULATING LAYER, ELECTRONIC DEVICE, FIELD EFFECT TRANSISTOR, AND POLYVINYLTHIOPHENOL

Info

Publication number: EP2048171A4
Authority: EP; European Patent Office
Prior art keywords: polyvinylthiophenol; electronic device; insulating layer; field effect; effect transistor
Prior art date: 2006-08-04
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Granted

Application number

EP07805896.3A

Other languages

German (de)

French (fr)

Other versions

EP2048171A1 (en

EP2048171B1 (en

Inventor

Shinji Aramaki

Yoshimasa Sakai

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Mitsubishi Chemical Corp

Original Assignee

Mitsubishi Chemical Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2006-08-04

Filing date

2007-08-02

Publication date

2013-10-16

2007-08-02 Application filed by Mitsubishi Chemical Corp filed Critical Mitsubishi Chemical Corp

2009-04-15 Publication of EP2048171A1 publication Critical patent/EP2048171A1/en

2013-10-16 Publication of EP2048171A4 publication Critical patent/EP2048171A4/en

2017-11-22 Application granted granted Critical

2017-11-22 Publication of EP2048171B1 publication Critical patent/EP2048171B1/en

Status Ceased legal-status Critical Current

2027-08-02 Anticipated expiration legal-status Critical

Classifications

- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F212/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
- C08F212/02—Monomers containing only one unsaturated aliphatic radical
- C08F212/04—Monomers containing only one unsaturated aliphatic radical containing one ring
- C08F212/14—Monomers containing only one unsaturated aliphatic radical containing one ring substituted by heteroatoms or groups containing heteroatoms
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F212/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
- C08F212/02—Monomers containing only one unsaturated aliphatic radical
- C08F212/04—Monomers containing only one unsaturated aliphatic radical containing one ring
- C08F212/14—Monomers containing only one unsaturated aliphatic radical containing one ring substituted by heteroatoms or groups containing heteroatoms
- C08F212/16—Halogens
- C08F212/21—Bromine
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/26—Esters containing oxygen in addition to the carboxy oxygen
- C08F220/30—Esters containing oxygen in addition to the carboxy oxygen containing aromatic rings in the alcohol moiety
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/464—Lateral top-gate IGFETs comprising only a single gate
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
- H10K10/471—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising only organic materials

Landscapes

Chemical & Material Sciences (AREA)
Health & Medical Sciences (AREA)
Chemical Kinetics & Catalysis (AREA)
Medicinal Chemistry (AREA)
Polymers & Plastics (AREA)
Organic Chemistry (AREA)
Thin Film Transistor (AREA)
Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)

EP07805896.3A 2006-08-04 2007-08-02 Insulating layer, electronic device and field effect transistor Ceased EP2048171B1 (en)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
JP2006213014		2006-08-04
PCT/JP2007/065175 WO2008016110A1 (en)	2006-08-04	2007-08-02	Insulating layer, electronic device, field effect transistor, and polyvinylthiophenol

Publications (3)

Publication Number	Publication Date
EP2048171A1 EP2048171A1 (en)	2009-04-15
EP2048171A4 true EP2048171A4 (en)	2013-10-16
EP2048171B1 EP2048171B1 (en)	2017-11-22

Family

ID=38997284

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
EP07805896.3A Ceased EP2048171B1 (en)	2006-08-04	2007-08-02	Insulating layer, electronic device and field effect transistor

Country Status (5)

Country	Link
US (1)	US8207524B2 (en)
EP (1)	EP2048171B1 (en)
KR (1)	KR101120450B1 (en)
CN (1)	CN101501080B (en)
WO (1)	WO2008016110A1 (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US7829155B1 (en) *	2006-11-22	2010-11-09	The University Of Memphis Research Foundation	Nanothin polymer coatings containing thiol and methods of use thereof
DE102008057350A1 (en) *	2008-11-14	2010-05-20	Osram Opto Semiconductors Gmbh	Radiation-emitting component and method for its production
TW201126606A (en) *	2009-09-15	2011-08-01	Sumitomo Chemical Co	Photocrosslinkable organic thin-film transistor insulation layer material
WO2011062093A1 (en) *	2009-11-17	2011-05-26	住友化学株式会社	Optical and thermal energy crosslinkable insulating layer material for organic thin film transistor
WO2012002436A1 (en) *	2010-06-30	2012-01-05	住友化学株式会社	Insulating layer material for organic thin-film transistor, and organic thin-film transistor
JP2012164805A (en) *	2011-02-07	2012-08-30	Sumitomo Chemical Co Ltd	Light and heat energy cross-linking organic thin-film transistor insulation layer material
JP2012222007A (en) *	2011-04-05	2012-11-12	Dainippon Printing Co Ltd	Coplanar type oxide semiconductor element and manufacturing method of the same
CN102508408B (en) *	2011-10-27	2014-09-10	无锡英普林纳米科技有限公司	Dual-solidification nanoimprint lithography transporting layer material
KR102279015B1 (en) *	2014-06-30	2021-07-19	엘지디스플레이 주식회사	Self healing polymer and flexible display comprising the same
WO2020130104A1 (en) *	2018-12-20	2020-06-25	東ソー株式会社	Composition containing organic semiconductor, solution for forming organic semiconductor layer, organic semiconductor layer, and organic thin film transistor

Citations (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
EP1416548A2 (en) *	2002-09-28	2004-05-06	Samsung Electronics Co., Ltd.	Organic gate insulating film and organic thin film transistor using the same
EP1494298A2 (en) *	2003-07-03	2005-01-05	Samsung Electronics Co., Ltd.	Organic thin film transistor comprising multi-layered gate insulator

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPH09316135A (en)	1996-05-28	1997-12-09	Kuraray Co Ltd	Method for producing graft polymer
US6215130B1 (en)	1998-08-20	2001-04-10	Lucent Technologies Inc.	Thin film transistors
WO2000079617A1 (en) *	1999-06-21	2000-12-28	Cambridge University Technical Services Limited	Aligned polymers for an organic tft
JP2002139836A (en) *	2000-11-02	2002-05-17	Fuji Photo Film Co Ltd	Negative type resist composition
JP4736324B2 (en) *	2002-04-22	2011-07-27	コニカミノルタホールディングス株式会社	Semiconductor device and manufacturing method thereof
CN101667624B (en) *	2002-07-31	2011-08-17	三菱化学株式会社	Field effect transistor
JP5137296B2 (en)	2004-03-19	2013-02-06	三菱化学株式会社	Field effect transistor
JP2006213014A (en)	2005-02-07	2006-08-17	Ricoh Co Ltd	Image output device
JP2006245559A (en) *	2005-02-07	2006-09-14	Mitsubishi Chemicals Corp	Field effect transistor and manufacturing method thereof
JP4897397B2 (en)	2005-12-27	2012-03-14	ハリソン東芝ライティング株式会社	UV irradiation equipment

2007
- 2007-08-02 US US12/376,123 patent/US8207524B2/en not_active Expired - Fee Related
- 2007-08-02 WO PCT/JP2007/065175 patent/WO2008016110A1/en not_active Ceased
- 2007-08-02 EP EP07805896.3A patent/EP2048171B1/en not_active Ceased
- 2007-08-02 CN CN2007800289700A patent/CN101501080B/en not_active Expired - Fee Related
- 2007-08-02 KR KR1020097002176A patent/KR101120450B1/en not_active Expired - Fee Related

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
EP1416548A2 (en) *	2002-09-28	2004-05-06	Samsung Electronics Co., Ltd.	Organic gate insulating film and organic thin film transistor using the same
EP1494298A2 (en) *	2003-07-03	2005-01-05	Samsung Electronics Co., Ltd.	Organic thin film transistor comprising multi-layered gate insulator

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO2008016110A1 *

Also Published As

Publication number	Publication date
CN101501080A (en)	2009-08-05
CN101501080B (en)	2011-05-11
US20100001264A1 (en)	2010-01-07
EP2048171A1 (en)	2009-04-15
WO2008016110A1 (en)	2008-02-07
US8207524B2 (en)	2012-06-26
EP2048171B1 (en)	2017-11-22
KR101120450B1 (en)	2012-03-14
KR20090026210A (en)	2009-03-11

Publication	Publication Date	Title
EP2048171A4 (en)	2013-10-16	INSULATING LAYER, ELECTRONIC DEVICE, FIELD EFFECT TRANSISTOR, AND POLYVINYLTHIOPHENOL
EP2073290A4 (en)	2011-06-15	THIN-FILM ORGANIC TRANSISTOR DEVICE AND LIGHT-EMITTING ORGANIC THIN-FILM TRANSISTOR
EP2023384A4 (en)	2013-01-02	ELECTRONIC COMPONENT, SEMICONDUCTOR ASSEMBLY, AND ELECTRONIC DEVICE
EP2077590A4 (en)	2011-01-12	FIELD EFFECT TRANSISTOR
EP2065925A4 (en)	2009-09-02	FIELD EFFECT TRANSISTOR
EP2232608A4 (en)	2011-07-27	LIGHT-EMITTING ELEMENT, LIGHT-EMITTING DEVICE, AND ELECTRONIC DEVICE
EP2355139A4 (en)	2012-10-03	METHOD FOR MANUFACTURING THIN FILM TRANSISTOR, THIN FILM TRANSISTOR, AND ELECTRONIC DEVICE
EP2015399A4 (en)	2013-01-30	ANISOTROPIC CONDUCTOR CONNECTOR AND ANISOTROPIC CONDUCTOR CONNECTOR DEVICE
GB2449023B (en)	2011-06-15	Electronic short channel device comprising an organic semiconductor formulation
EP2090955A4 (en)	2010-12-22	ELECTRONIC APPARATUS AND CABLE DEVICE
EP2278593A4 (en)	2013-08-28	CONNECTING MATERIAL AND SEMICONDUCTOR DEVICE
EP1956648A4 (en)	2011-09-21	SEMICONDUCTOR DEVICE
BRPI0916046A2 (en)	2015-11-10	multilayer structure and electronic device module
EP2038657A4 (en)	2010-06-02	ASSAY DEVICE AND METHOD
EP2517255A4 (en)	2012-12-12	FIELD EFFECT TRANSISTOR, SEMICONDUCTOR MEMORY, DISPLAY ELEMENT, IMAGE DISPLAY DEVICE, AND SYSTEM
EP1990703A4 (en)	2013-05-01	Dust-proof structure of sliding type electronic device, and sliding type electronic device
EP2063959A4 (en)	2013-03-13	PORTABLE ELECTRONIC DEVICE
EP1983671A4 (en)	2015-04-22	TRANSMISSION DEVICE AND TRANSMISSION METHOD THEREOF
FI20055668A0 (en)	2005-12-13	Antenna module and an electronic device using it
EP2048176A4 (en)	2010-04-28	POLYMER COMPOUND AND LUMINESCENT POLYMER DEVICE
EP2059103A4 (en)	2010-08-04	SEMICONDUCTOR DEVICE AND MULTILAYER CONNECTION CHART
EP2068248A4 (en)	2011-06-29	CONTENT MANAGEMENT DEVICE
EP2418684A4 (en)	2016-12-14	FIELD EFFECT TRANSISTOR, MANUFACTURING METHOD THEREFOR, AND ELECTRONIC DEVICE USING THE SAME
EP2023393A4 (en)	2011-08-03	SEMICONDUCTOR DEVICE
EP2096326A4 (en)	2012-10-03	CANNELED BALL DEVICE

Legal Events

Date	Code	Title	Description
2009-03-13	PUAI	Public reference made under article 153(3) epc to a published international application that has entered the european phase	Free format text: ORIGINAL CODE: 0009012
2009-04-15	17P	Request for examination filed	Effective date: 20090204
2009-04-15	AK	Designated contracting states	Kind code of ref document: A1 Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU LV MC MT NL PL PT RO SE SI SK TR
2009-04-15	AX	Request for extension of the european patent	Extension state: AL BA HR MK RS
2009-09-02	DAX	Request for extension of the european patent (deleted)
2009-09-02	RBV	Designated contracting states (corrected)	Designated state(s): DE
2012-07-04	RAP1	Party data changed (applicant data changed or rights of an application transferred)	Owner name: MITSUBISHI CHEMICAL CORPORATION
2013-10-16	A4	Supplementary search report drawn up and despatched	Effective date: 20130913
2013-10-16	RIC1	Information provided on ipc code assigned before grant	Ipc: C08F 12/30 20060101AFI20130909BHEP Ipc: H01L 51/30 20060101ALI20130909BHEP Ipc: H01L 51/05 20060101ALI20130909BHEP Ipc: H01L 51/40 20060101ALI20130909BHEP Ipc: H01L 21/312 20060101ALI20130909BHEP Ipc: H01L 29/786 20060101ALI20130909BHEP
2017-03-22	17Q	First examination report despatched	Effective date: 20170216
2017-06-22	GRAP	Despatch of communication of intention to grant a patent	Free format text: ORIGINAL CODE: EPIDOSNIGR1
2017-07-19	INTG	Intention to grant announced	Effective date: 20170623
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