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EP1919046A3 - Surface-emitting semiconductor array device, module, light source device, data processing apparatus, light transmitting device, light spatial transmitting apparatus, and light spatial tansmitting system - Google Patents

Surface-emitting semiconductor array device, module, light source device, data processing apparatus, light transmitting device, light spatial transmitting apparatus, and light spatial tansmitting system Download PDF

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Publication number
EP1919046A3
EP1919046A3 EP07105126A EP07105126A EP1919046A3 EP 1919046 A3 EP1919046 A3 EP 1919046A3 EP 07105126 A EP07105126 A EP 07105126A EP 07105126 A EP07105126 A EP 07105126A EP 1919046 A3 EP1919046 A3 EP 1919046A3
Authority
EP
European Patent Office
Prior art keywords
light
spatial
transmitting
tansmitting
module
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP07105126A
Other languages
German (de)
French (fr)
Other versions
EP1919046A2 (en
EP1919046B1 (en
Inventor
Nobuaki Ueki
Yasuaki Miyamoto
Jun Sakurai
Terutaka Inoue
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Business Innovation Corp
Original Assignee
Fuji Xerox Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Xerox Co Ltd filed Critical Fuji Xerox Co Ltd
Publication of EP1919046A2 publication Critical patent/EP1919046A2/en
Publication of EP1919046A3 publication Critical patent/EP1919046A3/en
Application granted granted Critical
Publication of EP1919046B1 publication Critical patent/EP1919046B1/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/42—Arrays of surface emitting lasers
    • H01S5/423—Arrays of surface emitting lasers having a vertical cavity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04254—Electrodes, e.g. characterised by the structure characterised by the shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/17—Semiconductor lasers comprising special layers
    • H01S2301/176—Specific passivation layers on surfaces other than the emission facet
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02251—Out-coupling of light using optical fibres
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02253—Out-coupling of light using lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H01S5/02345—Wire-bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18344—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] characterized by the mesa, e.g. dimensions or shape of the mesa
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4075—Beam steering

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Led Device Packages (AREA)

Abstract

A surface-emitting semiconductor array device includes a substrate (100), a plurality of light-emitting portions (102), an electrode pad portion (106) formed on the substrate (100) and disposed through the plurality of light-emitting portions and a dividing groove (104), and having a plurality of electrode pads (108) formed on an insulating film, and a plurality of metal wirings (110) for connecting each of the plurality of light-emitting portions (102) to a corresponding electrode pad (108) through the dividing groove (104), the dividing groove (104) has a wave-shaped side wall formed on the substrate (100).
EP07105126A 2006-09-28 2007-03-28 Surface-emitting semiconductor array device, module, light source device, data processing apparatus, light transmitting device, light spatial transmitting apparatus, and light spatial tansmitting system Expired - Fee Related EP1919046B1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006264958A JP4935278B2 (en) 2006-09-28 2006-09-28 Surface emitting semiconductor array element, module, light source device, information processing device, optical transmission device, optical spatial transmission device, and optical spatial transmission system

Publications (3)

Publication Number Publication Date
EP1919046A2 EP1919046A2 (en) 2008-05-07
EP1919046A3 true EP1919046A3 (en) 2011-01-05
EP1919046B1 EP1919046B1 (en) 2012-05-16

Family

ID=39183135

Family Applications (1)

Application Number Title Priority Date Filing Date
EP07105126A Expired - Fee Related EP1919046B1 (en) 2006-09-28 2007-03-28 Surface-emitting semiconductor array device, module, light source device, data processing apparatus, light transmitting device, light spatial transmitting apparatus, and light spatial tansmitting system

Country Status (4)

Country Link
US (1) US7672352B2 (en)
EP (1) EP1919046B1 (en)
JP (1) JP4935278B2 (en)
CN (1) CN101154792B (en)

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JP2008135596A (en) * 2006-11-29 2008-06-12 Ricoh Co Ltd Semiconductor laser array manufacturing method, surface emitting semiconductor laser array, light source unit, optical scanning device, image forming apparatus, optical transmission module, and optical transmission system
JP5504784B2 (en) * 2009-03-18 2014-05-28 株式会社リコー Surface emitting laser, surface emitting laser array, optical scanning device, and image forming apparatus
JP2011035017A (en) * 2009-07-30 2011-02-17 Hitachi Cable Ltd Light-emitting device
JP5721055B2 (en) * 2010-06-11 2015-05-20 株式会社リコー Surface emitting laser element, surface emitting laser array, optical scanning device, image forming apparatus, and method for manufacturing surface emitting laser element
JP5721501B2 (en) * 2011-03-31 2015-05-20 京セラ株式会社 Semiconductor device and manufacturing method of semiconductor device
CN102903801B (en) * 2011-07-28 2015-06-10 上海博恩世通光电股份有限公司 LED (light-emitting diode) chip with adhesive current barrier layer and manufacturing method thereof
CN102903802B (en) * 2011-07-28 2015-09-16 上海博恩世通光电股份有限公司 There is LED chip of DBR type current barrier layer and preparation method thereof
DE112013002684T5 (en) * 2012-05-25 2015-03-19 Murata Manufacturing Co., Ltd. Vertical cavity surface emitting laser device and vertical cavity surface emitting laser array device
WO2015033633A1 (en) * 2013-09-03 2015-03-12 株式会社村田製作所 Vertical cavity surface emitting laser element, semiconductor wafer and light emitting module provided with vertical cavity surface emitting laser element, and method for manufacturing vertical cavity surface emitting laser element
JP2015088548A (en) * 2013-10-29 2015-05-07 株式会社リコー Face light emission laser array
JP6303481B2 (en) * 2013-12-20 2018-04-04 セイコーエプソン株式会社 Light emitting device module, quantum interference device, atomic oscillator, electronic device, and moving object
JP6004063B1 (en) * 2015-09-09 2016-10-05 富士ゼロックス株式会社 Manufacturing method of surface emitting semiconductor laser device
JP2018026478A (en) * 2016-08-10 2018-02-15 富士ゼロックス株式会社 Light emitting device, light emitting device array, and optical transmission device
JP6380512B2 (en) * 2016-11-16 2018-08-29 富士ゼロックス株式会社 Light emitting element array and optical transmission device
CN110301076B (en) * 2017-02-21 2021-06-08 亮锐控股有限公司 Light source array comprising a plurality of VCSELs
US10535799B2 (en) * 2017-05-09 2020-01-14 Epistar Corporation Semiconductor device
CN108717942B (en) 2018-05-31 2021-11-19 京东方科技集团股份有限公司 OLED substrate, manufacturing method thereof and display device
CN108879325B (en) * 2018-07-05 2020-07-31 扬州乾照光电有限公司 VCSE L array chip and manufacturing method
CN113169522B (en) * 2018-09-25 2022-12-30 瑞识科技（深圳）有限公司 Vertical Cavity Surface Emitting Laser (VCSEL) array
US11655968B2 (en) * 2020-09-24 2023-05-23 Koito Manufacturing Co., Ltd. Light-emitting module
CN115117735A (en) * 2021-03-17 2022-09-27 上海禾赛科技有限公司 Laser, light source module and laser radar
CN219592702U (en) * 2023-02-14 2023-08-25 隆达电子股份有限公司 Light-emitting module and its electrical module

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JPH05283407A (en) * 1992-04-06 1993-10-29 Nippon Telegr & Teleph Corp <Ntt> Manufacture of semiconductor device
US5453405A (en) * 1991-01-18 1995-09-26 Kopin Corporation Method of making light emitting diode bars and arrays
EP0905838A1 (en) * 1997-09-30 1999-03-31 Canon Kabushiki Kaisha Surface-type optical device, fabrication method therefor and display device
JP2000012904A (en) * 1998-06-19 2000-01-14 Oki Electric Ind Co Ltd Led array
US6195485B1 (en) * 1998-10-26 2001-02-27 The Regents Of The University Of California Direct-coupled multimode WDM optical data links with monolithically-integrated multiple-channel VCSEL and photodetector
US20020185588A1 (en) * 2000-03-27 2002-12-12 Sigurd Wagner Semitransparent optical detector on a flexible substrate and method of making
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US20050163182A1 (en) * 2004-01-20 2005-07-28 Seiko Epson Corporation Surface-emitting type semiconductor laser and its manufacturing method, and optical module

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JP2005191260A (en) * 2003-12-25 2005-07-14 Ricoh Co Ltd Semiconductor laser, method of manufacturing the same, optical transmission module, and optical communication system
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JP4815812B2 (en) * 2004-02-04 2011-11-16 富士ゼロックス株式会社 Vertical cavity surface emitting semiconductor laser device
JP4899344B2 (en) * 2004-06-29 2012-03-21 富士ゼロックス株式会社 Surface emitting semiconductor laser and manufacturing method thereof
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Publication number Priority date Publication date Assignee Title
US5453405A (en) * 1991-01-18 1995-09-26 Kopin Corporation Method of making light emitting diode bars and arrays
JPH05283407A (en) * 1992-04-06 1993-10-29 Nippon Telegr & Teleph Corp <Ntt> Manufacture of semiconductor device
EP0905838A1 (en) * 1997-09-30 1999-03-31 Canon Kabushiki Kaisha Surface-type optical device, fabrication method therefor and display device
JP2000012904A (en) * 1998-06-19 2000-01-14 Oki Electric Ind Co Ltd Led array
US6195485B1 (en) * 1998-10-26 2001-02-27 The Regents Of The University Of California Direct-coupled multimode WDM optical data links with monolithically-integrated multiple-channel VCSEL and photodetector
US20020185588A1 (en) * 2000-03-27 2002-12-12 Sigurd Wagner Semitransparent optical detector on a flexible substrate and method of making
JP2003179137A (en) * 2002-10-21 2003-06-27 Yamaha Corp Method for forming wiring
US20050163182A1 (en) * 2004-01-20 2005-07-28 Seiko Epson Corporation Surface-emitting type semiconductor laser and its manufacturing method, and optical module

Also Published As

Publication number Publication date
EP1919046A2 (en) 2008-05-07
US7672352B2 (en) 2010-03-02
US20080080583A1 (en) 2008-04-03
EP1919046B1 (en) 2012-05-16
JP2008085161A (en) 2008-04-10
CN101154792B (en) 2010-09-01
JP4935278B2 (en) 2012-05-23
CN101154792A (en) 2008-04-02

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