EP1999757A1 - Method for programming an electronic circuit and electronic circuit - Google Patents
Method for programming an electronic circuit and electronic circuitInfo
- Publication number
- EP1999757A1 EP1999757A1 EP07723469A EP07723469A EP1999757A1 EP 1999757 A1 EP1999757 A1 EP 1999757A1 EP 07723469 A EP07723469 A EP 07723469A EP 07723469 A EP07723469 A EP 07723469A EP 1999757 A1 EP1999757 A1 EP 1999757A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- electrically conductive
- electronic circuit
- data storage
- storage unit
- organic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims description 37
- 239000010410 layer Substances 0.000 claims abstract description 138
- 238000013500 data storage Methods 0.000 claims abstract description 133
- 239000000126 substance Substances 0.000 claims abstract description 84
- 239000002346 layers by function Substances 0.000 claims abstract description 19
- 238000004519 manufacturing process Methods 0.000 claims abstract description 9
- 239000007788 liquid Substances 0.000 claims description 42
- 239000004020 conductor Substances 0.000 claims description 24
- 239000000758 substrate Substances 0.000 claims description 9
- 238000007639 printing Methods 0.000 claims description 7
- 238000001035 drying Methods 0.000 claims description 4
- 239000000155 melt Substances 0.000 claims description 4
- 230000005669 field effect Effects 0.000 claims description 3
- 239000000725 suspension Substances 0.000 claims description 3
- 238000001816 cooling Methods 0.000 claims description 2
- 238000005096 rolling process Methods 0.000 claims 1
- 230000015654 memory Effects 0.000 description 10
- 239000000463 material Substances 0.000 description 8
- 229920000128 polypyrrole Polymers 0.000 description 6
- 239000011368 organic material Substances 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 239000004033 plastic Substances 0.000 description 3
- 229920003023 plastic Polymers 0.000 description 3
- 229920002799 BoPET Polymers 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 230000008672 reprogramming Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000007711 solidification Methods 0.000 description 2
- 230000008023 solidification Effects 0.000 description 2
- 239000004952 Polyamide Substances 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000000975 dye Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000002427 irreversible effect Effects 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920002848 poly(3-alkoxythiophenes) Polymers 0.000 description 1
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 150000003384 small molecules Chemical class 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0009—RRAM elements whose operation depends upon chemical change
- G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/80—Array wherein the substrate, the cell, the conductors and the access device are all made up of organic materials
Definitions
- the invention relates to a method for programming an electronic circuit and an electronic circuit, which has at least one organic electrical functional layer and at least one data storage unit, wherein the data storage unit is formed with two electrically conductive layer contacts.
- DE 100 45 192 A1 discloses methods for producing electronic circuits containing data memories based on organic material.
- Data memories are used in combination with an organic integrated circuit (integrated plastic circuit), in particular for an RFID tag (RFID tags: radio frequency identification tags).
- RFID tags radio frequency identification tags
- Describing the data memory takes place here either by deliberate omission of conductor tracks or components of the electronic circuit already during their manufacture or by manipulation of conductor tracks such that they subsequently made conductive or non-conductive.
- tracks are made non-conductive by laser irradiation or deliberately introduced heat, made non-conductive by chemical treatment such as base / acid stamp conductive areas or vice versa, cut through by mechanical treatment tracks, by electrical voltage a short circuit and thus by local overheating destruction of a
- Conductor causes tracks are formed as "fusable links", which are interrupted by power or it is changed by laser irradiation, the electricity constant of a material.
- OFETs organic field effect transistors
- the object of the invention is to provide a further method for programming an electronic circuit with a data memory and a further electronic circuit with a data memory.
- the object is achieved for the method for programming an electronic circuit, which has at least one organic electrical functional layer and at least one data storage unit, wherein the data storage unit is formed with two electrically conductive layer contacts, characterized in that the two electrically conductive layer contacts adjacent to each other , preferably side by side in a plane, are formed and that a liquid substance containing an electrically conductive substance is applied to the data storage unit such that the liquid substance at least partially wets both electrically conductive layer contacts.
- the storage of a data bit in an electronic circuit can be carried out by such a method in a particularly simple and cost-effective manner.
- the inventive method for programming integrated circuits, such as transponder circuits suitable and allows individual programming of the data storage unit and thus the electronic circuit both during the manufacture of the electronic circuit as well as the end user of the electronic circuit. Programming is irreversible.
- the inventive method for producing printed circuits in particular printed organic circuits, which contain at least one printed organic functional layer and on a flexible substrate can be generated.
- a data storage element is formed, for example, simultaneously and preferably in one plane with an electrode layer, for example an organic logic element.
- the desired programming can take place and finally further layers of the electronic circuit or an encapsulation layer can be applied.
- the inventive method is optimally integrated in a roll-to-roll process in which a flexible substrate for receiving the electronic circuit is unwound from a roll and wound on a second roll after application of electrical functional layers.
- the electronic circuit which has at least one organic electrical functional layer and at least one data storage unit, wherein the data storage unit has two electrically conductive layer contacts, arranged in that the two electrically conductive layer contacts side by side, preferably arranged in a plane and that a) an electrically conductive dry substance or b) an electrically conductive solidified substance connects the two electrically conductive layer contacts with each other in an electrically conductive manner.
- Such an electronic circuit which can be formed in particular by the method according to the invention, is particularly cost-effective.
- the data storage unit is not rewritten or otherwise writable. Farther the data storage unit is layer-compatible in the integrated, in particular at least partially formed by a printing process, electronic circuit.
- the electronic circuit is preferably an integrated circuit, in particular an organic integrated circuit comprising at least one organic electrical functional layer formed by printing.
- organic material here includes all types of organic, organometallic and / or inorganic plastics, which in English z. B. be referred to as "plastics". These are all types of materials, with the exception of semiconductors, which form the classical diodes (germanium, silicon) and the typical metallic conductor. A restriction in the dogmatic sense of organic material as a carbon-containing material is therefore not provided, but is also due to the widespread use of z. B. silicones thought. Furthermore, the term should not be limited in terms of
- both rigid and flexible substrates can be used.
- Preferred here are flexible substrates in the form of films or film webs, which can be processed and printed continuously in the roll-to-roll process.
- Substrate materials are, for example, paper, PET, polyester, PEN or polyamides in question, which preferably have a thickness in the range of 12 to 100 ⁇ m.
- the layer contacts and the regions between the two layer contacts come into contact only with the liquid substance, so that the risk of contamination, in particular of organic materials, or of damage to adjacent layers of the electronic circuit is minimized.
- Programming can be done during the production of the tag or product, or during assembly of the electronics (eg, luggage tag, electronic stamp, ticket, each ticket having its own memory content). At the same time, this technique can also be used to provide electronics, such. As an electronic barcode or electronic ticket to use targeted unusable by a specific bit arrangement after use (when validating the ticket, when paying at the checkout) is specifically programmed or the memory is made illegible.
- a single drop can be precisely metered and placed, with the appropriate drop diameter being formed via the metered quantity of liquid substance.
- the liquid substance is dried, so that an electrically conductive dry substance comprising the electrically conductive substance is formed, which connects the two electrically conductive layer contacts to one another in an electrically conductive manner.
- an electrically conductive dry substance comprising the electrically conductive substance is formed, which connects the two electrically conductive layer contacts to one another in an electrically conductive manner.
- the liquid substance is not immediately dried or solidified, it must be ensured that application of additional layers does not lead to smearing of the liquid substance. This can be ensured by setting suitable viscosities for the liquid substance and the layer materials to be printed or otherwise applied over it.
- the liquid substance can be applied in the form of a solution, a suspension, an ink or a paste.
- liquid substance is applied by means of an inkjet printer.
- liquid substance is applied in the form of a melt, that a cooling of the liquid substance takes place and that a electrically conductive solidified substance comprising the electrically conductive substance is formed, which connects the two electrically conductive layer contacts electrically conductive with each other.
- melt is dropped or applied by means of an inkjet printer or by means of a thermal transfer process.
- the liquid substance preferably has a content of electrically conductive substance in the range from 10 to 90, preferably from 60 to 80 wt .-%.
- a content of electrically conductive substance in the range from 10 to 90, preferably from 60 to 80 wt .-%.
- different minimum contents of electrically conductive substance are required in order to form an electrically conductive connection between the two layer contacts of a data storage element.
- the electrically conductive material is selected from the group of metallic and / or organic conductive materials, with preference being given to using noble metals such as gold or silver and as conductive organic materials preferably pani, pedot or polypyrrole and carbon.
- a conductive silver paste or ink having a high carbon content such as printing ink, serve.
- the electronic circuit has in case a) the electrically conductive dry substance or in case b) the electrically conductive solidified substance on the electrically conductive substance from the group of metallic and / or organic conductive materials.
- the dry substance or the solidified substance may comprise further materials such as binders, adhesives, residues of chemical additives such as liquefiers or stabilizers, dyes or the like.
- electrode layers can also be formed, for example, by photolithography, by sputtering or vapor deposition.
- Functional layer in particular in the same operation as the electrically conductive functional layer are formed.
- At least one electrical functional layer of the electronic circuit is advantageous to apply to the electrically conductive dry substance or to the electrically conductive solidified substance. It is particularly preferable to guide current-carrying electrode layers or printed conductors over them in order to obstruct access to the data storage unit and thus to prevent attempts to change the programming.
- the electrically conductive dry substance or the electrically conductive solidified substance are covered with a sealing layer.
- the electrically conductive dry substance or the electrically conductive solidified substance is integrated by such a procedure in the structure of the electronic circuit and optimally protected against later undesired reprogramming.
- the two electrically conductive layer contacts of a data storage unit are arranged at a distance A in the range of 1 micron to 100 microns apart.
- At least one layer contact of a data storage unit is formed comb-shaped with at least two comb teeth and the two electrically conductive layer contacts are arranged interlocked with each other. If both electrically conductive layer contacts of a data storage unit have comb structures, they are arranged so that the comb structures of the two layer contacts engage with one another without touching each other. But other forms for the layer contacts are possible as long as areas which form the two electrically conductive layer contacts of a data storage unit, are present side by side at a distance A. in the In the simplest case, the layer contacts are designed as simple parallel conductor tracks.
- the layer contacts of a data storage device are preferably adjacent to one another on one level, but an arrangement on different levels is possible as long as the accessibility for the liquid substance is not lost and the area between the two layer contacts of the liquid substance is wettable.
- the dry substance or solidified substance formed from the liquid substance must reliably conductively connect layer contacts in different planes of an, in particular printed, electronic circuit, wherein a layer thickness that is as uniform as possible should result in order to avoid local ohmic resistances due to too small local conductor cross sections.
- a drop diameter D T of the liquid substance is preferably chosen to be greater than the distance A.
- the width of a layer contact is decisive, which is directly adjacent to the distance A and in the direction of the distance A to the distance A. The larger the droplet diameter is selected with regard to the distance A between the two layer contacts of a data storage unit, the lower the requirements for an exact placement of the droplet.
- a droplet diameter D ⁇ of the liquid substance is preferably at least as large as the sum of twice the distance A and three times the width of a Kammzinke selected.
- a selected drop diameter must reliably ensure a wetting of both layer contacts of a data storage element with the liquid substance, wherein the manufacturing tolerances occurring position tolerances in the positioning of the two layer contacts must be considered.
- the droplet diameter can also be formed smaller than the distance A if, due to suitable surface tensions, a run-out or divergence of the droplet occurs on impact with the data storage unit in such a way that the two layer contacts are nevertheless wetted.
- the two electrically conductive layer contacts of a data storage element preferably each have a thickness in the range of 10 nm to 2 ⁇ m.
- the width of the two electrically conductive layer contacts is preferably in the range from 1 ⁇ m to 100 ⁇ m in each case. In this case, the same widths for the two layer contacts are generally one Data storage unit preferred.
- the electronic circuit has two data storage units arranged next to one another. It is preferred if an electrically conductive layer contact of a first data storage unit is electrically conductively connected to at least one electrically conductive layer contact of a second data storage unit. In this case, it is advantageous to connect the non-interconnected layer contacts of the two data storage units for one data storage unit to the positive pole and for the other data storage unit to the negative pole of a voltage source.
- the programming of the electronic circuit is thus particularly forgery-proof.
- the at least one organic electrical functional layer of the electronic circuit is formed by printing that the at least two data storage elements are arranged in the printing direction of the electronic circuit on a line one behind the other. This facilitates later programming or selective placement of the liquid substance.
- the programming of the electronic circuit preferably takes place in a roll-to-roll process during the production of the electronic circuit.
- An electrically conductive layer contact of a data storage unit is selectively connected to areas of the electronic circuit.
- the electronic circuit preferably comprises at least one organic logic gate, which with the at least one
- Data storage unit is electrically connected.
- the connected areas of the electronic circuit are preferably located between a decoder area in which the data storage query sequence is generated and the organic logic gate.
- a parallel input signal is converted into a sequential output signal.
- an organic logic gate for the realization of the memory property usually inverter components, NOR gates or NAND gates are used.
- the signal of the organic logic gate is depending on
- the memory is set to the value "0" or "1".
- the organic inverter component is preferably formed by an organic field effect transistor (OFET), which has a drain electrode and a source electrode, a gate electrode and a semiconducting layer and an electrically insulating layer.
- OFET organic field effect transistor
- the at least one data storage unit is arranged at the level of the drain-source or gate electrode.
- the at least one data storage unit is arranged in a supply voltage path of the organic logic gate.
- the common layer contact of the two data storage units is connected to the organic logic gate.
- FIG. 1 two data storage units arranged next to one another with a common electrical layer contact
- Figure 2 is a simplified representation of the data storage units of Figure 1, wherein the data storage unit 2 was dripped.
- FIG. 4b shows a detailed view of the two data storage units from FIG. 4a
- FIG. 5 shows a cross section through a printed electronic circuit in the region of an OFET, which is connected to two data storage units according to FIG.
- Figure 1 shows a first data storage unit 1 and a second data storage unit 2, as they can occur in the electronic circuit, in the Top view.
- the first and second electrically conductive layer contacts Ia, Ib are formed of electrically conductive polypyrrole in a width of 20 microns and in a thickness of 100 nm. Both the first and the second electrically conductive
- Layer contact Ia, Ib have comb-like structures, which are arranged interlocked with each other. At the first layer contact Ia of the first data storage unit 1 is applied to a first voltage Vl.
- the third and the fourth electrically conductive layer contact 2a, 2b are also formed of electrically conductive polypyrrole in a width of 10 microns and a thickness of 100 microns. Both the third and the fourth electrically conductive
- Layer contact 2a, 2b have comb-like structures, which are arranged toothed with each other.
- a second voltage V2 At the third layer contact 2a of the second data storage unit 2 is applied to a second voltage V2.
- the second layer contact Ib of the first data storage unit 1 is electrically conductively connected to the fourth layer contact 2b of the second data storage unit 2.
- Layer contact Ib, 2b designated layer contact is electrically connected via a conductor 5 with an organic logic gate, not shown here, here an organic inverter component 6 (see Figures 3 and 4) of the electronic circuit.
- a first drop 3a of a liquid substance is shown, which can be dropped onto the first data storage unit 1 by means of a capillary 4a.
- a capillary 4a Above the second
- a second drop 3b of a liquid substance is shown, which can be dropped by means of a capillary 4b on the second data storage unit 2.
- the first drop 3a and / or the second drop 3b or neither of them can be dropped.
- a first drop 3a dripped onto the first data storage unit 1 is intended to wet the first layer contact 1a and the second layer contact 1b.
- a drop diameter D Ta of the first drop 3a is to be selected in accordance with the distance A accordingly.
- a second drop 3b dropped onto the second data storage unit 2 is intended to wet the third layer contact 2a and the fourth layer contact 2b.
- a drop diameter D ⁇ b of the second drop 3b is to be selected in accordance with the distance A accordingly. After drying or solidification of the second drop 3b is an electrically conductive connection between the third
- Dripped drop 3b, Vl and V2 are connected. If, for example, a positive voltage is present at the first layer contact Ia and the third layer contact 2a is grounded, a short circuit is generated. With the data storage arrangements illustrated in FIG. 1, an inverter component of an electronic circuit can thus be connected in a simple manner with different signals.
- a solution containing polypyrrole is used as the electrically conductive substance.
- FIG. 2 shows a simplified representation of the first and second data storage units 1, 2.
- the second data storage unit 2 (see FIG Drop 3b dropped while the first data storage unit 1 was not dripped.
- the second drop 3b wets both areas of the third layer contact 2a and the fourth layer contact 2b and is dried. After drying, an electrically conductive compound in the form of a dry substance remains (see FIG. 5, section 3b '), here in the form of electrically conductive polypyrrole.
- FIG. 3 now shows different examples, such as a
- Inverter component 6 by means of the first and the second data storage unit 1, 2 can be programmed according to Figure 1.
- An input signal al in the inverter component 6 is changed depending on the programming of the two data storage units 1, 2 to an output signal a2, a3 or a4.
- Case 1 Input signal al is converted into the output signal a2
- the data storage unit 1 according to FIG. 1 is dripped with the first drop 3a and an electrically conductive connection is formed between the first layer contact 1a and the second layer contact 1b.
- the second data storage unit 2 is not dripped.
- the conductor 5 is connected to the contact Sl of
- Inverter component 6 connected.
- the two terminals Sl and S2 of the inverter component 6 allow the connection of the inverter component 6 to a supply voltage.
- the terminal S2 of the inverter device 6 is grounded.
- the data storage unit 2 according to FIG. 1 is dripped with the second droplet 3b and an electrically conductive connection is formed between the third layer contact 2a and the fourth layer contact 2b.
- the first data storage unit 1 is not dripped.
- the conductor 5 is connected to the contact Sl of the inverter component 6.
- the fourth layer contact 2b of the second data storage unit 2 and thus also the terminal Sl connected to ground.
- the terminal S2 of the inverter device 6 is also grounded.
- the data storage unit 1 according to FIG. 1 is dripped with the first droplet 3a and an electrically conductive connection is formed between the first layer contact 1a and the second layer contact 1b.
- the second data storage unit 2 is not dripped.
- the conductor 5 is connected to the terminal S2 of the inverter component 6.
- the port Sl is connected to the voltage Vl. In this case, lies on the second layer contact Ib of the first data storage unit
- Inverter device is connected to ground.
- the data storage units 1 and 1 are connected to ground.
- the data storage units 1 and 2 shown in Fig. 1 are not only connected to one terminal of the inverter device 6, but that in each case two interconnected according to Fig. 1 data storage units with their conductor track 5 with the Terminal Sl and two other interconnected according to Fig. 1 data storage units are connected to the terminal S2. This makes it possible to generate all the previously described output signals a2, a3 or a4 by appropriately dripping the individual data storage units onto the input signal al.
- only one data storage unit which is constructed, for example, like the data storage unit 1 according to FIG. connected to the terminal Sl or the terminal S2 of the inverter component 6.
- One of the electrically conductive layer contacts of the data storage units is thus connected to the terminal Sl or S2 and the other electrically conductive layer contact of the data storage unit is connected to the supply voltage or ground.
- the terminal of the inverter component 6, which is connected to the data storage unit is further connected via a high-impedance resistor to ground or to the supply voltage Vl.
- FIG. 4a now shows different examples of how an inverter component 6 can be programmed by means of two data storage units 7, 8, which are connected to the signal output Sa of the inverter component 6.
- An input signal bl in the inverter component 6 is changed depending on the programming of the two data storage units 7, 8 to an output signal b2, b3 or b4.
- the two terminals Sl and S2 of the inverter component 6 allow the connection of the inverter component 6 to a supply voltage, wherein the supply voltage is applied to S1 and S2 is connected to earth.
- the first data storage unit 7 has a first layer contact 7a and a second layer contact 7b.
- the first layer contact 7a is - not shown here - connected to the terminal Sl.
- the second data storage unit 8 has a third layer contact 8a and a fourth layer contact 8b.
- Layer contact 8a is - not shown here - connected to the terminal S2 (earth).
- the conductor track 5 is connected to the output signal contact Sa of the inverter component 6 and connects the second layer contact 7b, the fourth layer contact 8b and the output signal contact Sa of the inverter device 6.
- the first data storage unit 7 drips and an electrically conductive connection between the first layer contact 7a and the second Layer contact 7b formed.
- the second data storage unit 8 is not dripped.
- the voltage V 1 is applied to the second layer contact 7 b of the first data storage unit 7 and thus also to the connection Sa.
- FIG. 5 shows a cross section through a region of a printed electronic circuit in the region of an organic inverter component 6 embodied as an OFET, which is connected to the data storage units 1, 2 according to FIG.
- an organic inverter component 6 embodied as an OFET
- the electrically conductive first and third layer contact Ia, 2a and the common layer contact Ib, 2b can be seen.
- the section through the data storage units 1, 2 according to Figure 2 is performed in the amount of electrically conductive dry matter of polypyrrole and finally out in the amount of the conductor 5 to an inverter component 6, not shown in Figure 2.
- the dry substance remaining from the drop 3b according to FIG. 2 is identified by the reference numeral 3b '.
- the inverter component 6, which is represented by an OFET, has, in the plane of the data storage units 1, 2, a source electrode 11 and a drain electrode 12, the electrically conductive layer contacts 1 a, 1 b, 2 a, 2 b, the source electrode 11 and the drain electrode 12 were printed from the same material and in one operation.
- a full-area semiconductive organic layer 14 of P3AT covers the data storage units 1, 2 as well as the source and drain electrodes 11, 12.
- On the semiconducting layer 14 is a full-surface electrically insulating layer 15 of PHS, PMMA and a gate electrode 13.
- the common layer electrode Ib, 2b of the data storage units 1, 2 is electrically connected to the source electrode 11, so that at the source electrode 11 the voltage V2 (see Figure 1) is applied.
- a subsequent reprogramming of the electronic circuit is made impossible by the integration of the electrically conductive dry substance 3b 'in the layer structure of the circuit.
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Thin Film Transistor (AREA)
- Semiconductor Memories (AREA)
- Parts Printed On Printed Circuit Boards (AREA)
- Circuits Of Receivers In General (AREA)
- Credit Cards Or The Like (AREA)
Abstract
Description
Claims
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102006013605A DE102006013605A1 (en) | 2006-03-22 | 2006-03-22 | Method for programming an electronic circuit and electronic circuit |
| PCT/EP2007/002512 WO2007107357A1 (en) | 2006-03-22 | 2007-03-21 | Method for programming an electronic circuit and electronic circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| EP1999757A1 true EP1999757A1 (en) | 2008-12-10 |
| EP1999757B1 EP1999757B1 (en) | 2010-09-08 |
Family
ID=38141584
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| EP07723469A Not-in-force EP1999757B1 (en) | 2006-03-22 | 2007-03-21 | Method for programming an electronic circuit and electronic circuit |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US8144495B2 (en) |
| EP (1) | EP1999757B1 (en) |
| CN (1) | CN101427322B (en) |
| AT (1) | ATE480855T1 (en) |
| DE (2) | DE102006013605A1 (en) |
| WO (1) | WO2007107357A1 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2543528B (en) | 2015-10-20 | 2020-01-15 | Advanced Risc Mach Ltd | Memory circuit |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59145576A (en) | 1982-11-09 | 1984-08-21 | ザイトレツクス・コ−ポレ−シヨン | Programmable mos transistor |
| JPS60117769A (en) | 1983-11-30 | 1985-06-25 | Fujitsu Ltd | Semiconductor memory device |
| JP2728412B2 (en) | 1987-12-25 | 1998-03-18 | 株式会社日立製作所 | Semiconductor device |
| US4937119A (en) * | 1988-12-15 | 1990-06-26 | Hoechst Celanese Corp. | Textured organic optical data storage media and methods of preparation |
| EP0418504B1 (en) | 1989-07-25 | 1995-04-05 | Matsushita Electric Industrial Co., Ltd. | Organic semiconductor memory device having a MISFET structure and its control method |
| JPH0722669A (en) * | 1993-07-01 | 1995-01-24 | Mitsubishi Electric Corp | Plastic functional element |
| US5574291A (en) * | 1994-12-09 | 1996-11-12 | Lucent Technologies Inc. | Article comprising a thin film transistor with low conductivity organic layer |
| US5625199A (en) * | 1996-01-16 | 1997-04-29 | Lucent Technologies Inc. | Article comprising complementary circuit with inorganic n-channel and organic p-channel thin film transistors |
| EP1296280A1 (en) | 1997-09-11 | 2003-03-26 | Precision Dynamics Corporation | Rf-id tag with integrated circuit consisting of organic materials |
| EP0958663A1 (en) | 1997-12-05 | 1999-11-24 | Koninklijke Philips Electronics N.V. | Identification transponder |
| US5998805A (en) * | 1997-12-11 | 1999-12-07 | Motorola, Inc. | Active matrix OED array with improved OED cathode |
| US6384804B1 (en) * | 1998-11-25 | 2002-05-07 | Lucent Techonologies Inc. | Display comprising organic smart pixels |
| US6072716A (en) * | 1999-04-14 | 2000-06-06 | Massachusetts Institute Of Technology | Memory structures and methods of making same |
| CN1181546C (en) | 2000-03-28 | 2004-12-22 | 皇家菲利浦电子有限公司 | Integrated circuits with programmable memory cells |
| DE10045192A1 (en) | 2000-09-13 | 2002-04-04 | Siemens Ag | Organic data storage, RFID tag with organic data storage, use of an organic data storage |
| US6864118B2 (en) * | 2002-01-28 | 2005-03-08 | Hewlett-Packard Development Company, L.P. | Electronic devices containing organic semiconductor materials |
| US20030151028A1 (en) * | 2002-02-14 | 2003-08-14 | Lawrence Daniel P. | Conductive flexographic and gravure ink |
| US6870183B2 (en) * | 2002-11-04 | 2005-03-22 | Advanced Micro Devices, Inc. | Stacked organic memory devices and methods of operating and fabricating |
| GB0229191D0 (en) * | 2002-12-14 | 2003-01-22 | Plastic Logic Ltd | Embossing of polymer devices |
| US6656763B1 (en) * | 2003-03-10 | 2003-12-02 | Advanced Micro Devices, Inc. | Spin on polymers for organic memory devices |
-
2006
- 2006-03-22 DE DE102006013605A patent/DE102006013605A1/en not_active Ceased
-
2007
- 2007-03-21 WO PCT/EP2007/002512 patent/WO2007107357A1/en not_active Ceased
- 2007-03-21 EP EP07723469A patent/EP1999757B1/en not_active Not-in-force
- 2007-03-21 CN CN2007800145189A patent/CN101427322B/en not_active Expired - Fee Related
- 2007-03-21 DE DE502007004997T patent/DE502007004997D1/en active Active
- 2007-03-21 US US12/293,852 patent/US8144495B2/en not_active Expired - Fee Related
- 2007-03-21 AT AT07723469T patent/ATE480855T1/en active
Non-Patent Citations (1)
| Title |
|---|
| See references of WO2007107357A1 * |
Also Published As
| Publication number | Publication date |
|---|---|
| ATE480855T1 (en) | 2010-09-15 |
| WO2007107357A1 (en) | 2007-09-27 |
| CN101427322B (en) | 2011-09-07 |
| CN101427322A (en) | 2009-05-06 |
| US8144495B2 (en) | 2012-03-27 |
| DE502007004997D1 (en) | 2010-10-21 |
| DE102006013605A1 (en) | 2007-10-11 |
| EP1999757B1 (en) | 2010-09-08 |
| US20090121218A1 (en) | 2009-05-14 |
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