EP1861337A1 - Coated substrate and process for the manufacture of a coated substrate - Google Patents
Coated substrate and process for the manufacture of a coated substrateInfo
- Publication number
- EP1861337A1 EP1861337A1 EP06705400A EP06705400A EP1861337A1 EP 1861337 A1 EP1861337 A1 EP 1861337A1 EP 06705400 A EP06705400 A EP 06705400A EP 06705400 A EP06705400 A EP 06705400A EP 1861337 A1 EP1861337 A1 EP 1861337A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- substrate
- crystalline
- amorphous
- substance
- nitride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 64
- 238000000034 method Methods 0.000 title claims description 29
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 239000000126 substance Substances 0.000 claims abstract description 61
- 238000000576 coating method Methods 0.000 claims abstract description 36
- 239000011248 coating agent Substances 0.000 claims abstract description 27
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims abstract description 17
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 10
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 9
- 239000000956 alloy Substances 0.000 claims abstract description 8
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 8
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims abstract description 6
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims abstract description 6
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 claims abstract description 6
- 239000011159 matrix material Substances 0.000 claims abstract description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 10
- 238000000151 deposition Methods 0.000 claims description 7
- 239000007789 gas Substances 0.000 claims description 7
- 230000008021 deposition Effects 0.000 claims description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- 239000011261 inert gas Substances 0.000 claims description 4
- 238000005240 physical vapour deposition Methods 0.000 claims description 4
- 150000001875 compounds Chemical class 0.000 claims description 3
- 229910005091 Si3N Inorganic materials 0.000 claims 1
- 229910017083 AlN Inorganic materials 0.000 description 10
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 239000004411 aluminium Substances 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 6
- 239000011521 glass Substances 0.000 description 5
- 229910002601 GaN Inorganic materials 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 4
- 230000009257 reactivity Effects 0.000 description 4
- 229910052582 BN Inorganic materials 0.000 description 3
- 238000001755 magnetron sputter deposition Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 239000005328 architectural glass Substances 0.000 description 1
- -1 argon) Chemical compound 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 239000006120 scratch resistant coating Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 238000004627 transmission electron microscopy Methods 0.000 description 1
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 description 1
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/006—Surface treatment of glass, not in the form of fibres or filaments, by coating with materials of composite character
- C03C17/007—Surface treatment of glass, not in the form of fibres or filaments, by coating with materials of composite character containing a dispersed phase, e.g. particles, fibres or flakes, in a continuous phase
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2217/00—Coatings on glass
- C03C2217/40—Coatings comprising at least one inhomogeneous layer
Definitions
- the invention relates to a coated substrate according to the preamble of the independent apparatus claim, as well as to a process for the manufacture of a coated substrate according to the independent process claim.
- Coatings for wear protection that make use of nano- structures are generally known.
- multi-layer structures such as WC/TiC (tungsten carbide/titanium carbide) as well as two-phase single-layer structures of immiscible substances that are deposited simultaneously (TiN/SiN x ) .
- these coatings suffer from the disadvantage that they are non-transparent to visible light.
- hard coatings that are used for ophthalmic applications (e.g. on glass or plastic substrates for spectacle glasses) are called “hard” but their hardness is only up to 10 GPa. They are usually made from silicon oxide or titanium oxide. Scratch resistant coatings having a hardness of about 20 GPa or more are extremely difficult to produce and are often limited to thin film thicknesses such as up to a few tens of nanometers (e.g. up to 50 nm) .
- the instant invention now suggests a coated substrate comprising a substrate and a crystalline/amorphous two-phase coating having a hardness of at least 20 GPa.
- the coating comprises a crystalline substance and an amorphous substance as a matrix.
- the crystalline substance and the amorphous substance are immiscible and are deposited on the substrate simultaneously so as to form the crystalline/amorphous two- phase coating.
- the crystalline substance is selected from the group consisting of aluminium nitride, boron nitride, gallium nitride and indium nitride, or alloys thereof, and the amorphous substance is silicon nitride.
- the term "immiscible” as used herein is to be understood such that up to 12% of silicon atoms can be contained in the crystalline phase, e.g. in the aluminium nitride phase.
- the crystalline substances (including the alloys thereof) show the desired hardness and are at the same time highly transparent at least to visible light, so that coatings obtained using these substances can be applied to glass which may be used, by way of example, for scanners, displays, sensors or architectural glass. Also, the coatings may be used for ophthalmic applications, such as for spectacle glasses or plastics.
- the crystalline substance is aluminium nitride.
- Substrates using aluminium nitride as the crystalline substance are comparatively easy to manufacture in a well-controlled process, for example by using a physical vapour deposition process (PVD-process) as will be described " in more detail further below.
- PVD-process physical vapour deposition process
- the thickness of the coating is up to 2 ⁇ m.
- Conventional transparent coatings having a thickness in this range are hitherto not known, since the substances used for manufacturing of the coatings were not suitable to obtain coatings having the afore-mentioned hardness.
- a further aspect of the invention is related to a process for the manufacture of a coated substrate.
- a substrate is coated with a crystalline/amorphous two-phase coating having a hardness of at least 20 GPa.
- the crystalline substance and the amorphous substance are immiscible (as to the meaning of the term "immiscible” see above) and are applied to the substrate simultaneously so as to form the two phase crystalline/amorphous coating.
- the crystalline substance is selected from the group consisting of aluminium nitride, boron nitride, gallium nitride and indium nitride, or alloys thereof, and the amorphous substance is silicon nitride. More preferably, aluminium nitride is selected as the crystalline substance.
- the crystalline/amorphous two-phase coating formed on the substrate is transparent at least to visible light.
- the crystalline and amorphous substances in accordance with a variant of the process are deposited on the substrate using a reactive physical vapour deposition (e.g. magnetron sputtering) process.
- a reactive physical vapour deposition e.g. magnetron sputtering
- at least two spatially separated targets may be used for the deposition of the two substances.
- a single compound target may be used, so that the compound target comprises an alloy of the two substances (e.g. Al, Si) in the respective required amounts.
- the unmixing of the two substances occurs even in this case, and in case of too low a reactivity of the deposited substances at the surface of the substrate, reactivity may be improved by supplying a high frequency voltage to the substrate holder or to the surface of the substrate (see below) .
- the substrate may be heated to a temperature above room temperature, for example to a temperature of 200 0 C.
- a high frequency bias voltage is applied between a holder of the substrate or the surface of the substrate, respectively, and a grounded wall of the vacuum chamber in which the coating is deposited on the substrate. It is thus possible to improve deposition of the crystalline/amorphous substances to form the crystalline/amorphous transparent two-phase coating.
- an inert gas is supplied in the spatial area of the target of the crystalline substance, while in the spatial area of the target of the amorphous substance the reactive gas, e.g. nitrogen, is supplied.
- the physical vapour deposition apparatus 1 (here: a magnetron sputtering apparatus) comprises a vacuum chamber 2 that is evacuated by means of a suitable vacuum pump VP that is known per se.
- a typical range for the pressure within vacuum chamber 2 during the reaction is from 0.1 to 1 Pa.
- a holder 3 for a substrate S to be coated is arranged within vacuum chamber 2. Between substrate holder 3 (or between the surface of substrate S) and the grounded wall 20 surrounding vacuum chamber 2 a high frequency bias voltage may be applied. This measure may assist the deposition process by generating a plasma in the area of the surface of substrate S thus improving the deposition of the substances of the coating as will be described further below.
- targets Tl and T2 are arranged spatially separated within vacuum chamber 2.
- target Tl may be a silicon target and target T2 may be an aluminium target.
- Targets Tl and T2 form the cathode of respective magnetrons Ml and M2, which serve for sputtering the substances onto the surface of substrate S.
- the magnetrons Ml and M2 assist in concentrating the plasma density in the area near targets Tl and T2 thus improving the sputtering rate.
- Two gas inlets Gl and G2 are also shown in the drawing figure. They supply a reactive gas, e.g. nitrogen, and an inert gas (e.g. argon), respectively, into vacuum chamber 2.
- a reactive gas e.g. nitrogen
- an inert gas e.g. argon
- the supply rate is dependent from the respective PVD-apparatus used and from the pumping speed of vacuum pump VP.
- the sputtering of the substances is a known process and operates essentially such, that plasma ions of the argon plasma erode atoms or clusters of atoms from targets Tl and T2.
- the magnetrons Ml and M2 serve for local concentration of the plasma density in the area of targets Tl and T2 so as to increase the erosion rate.
- the power densities (power/area) at the targets are, for example, 10 W/cm 2 at aluminium target T2 and about 1-2 W/cm 2 at silicon target Tl.
- it is essential that the substances are sputtered simultaneously onto the surface of substrate S so that the crystalline and amorphous substances are deposited on the surface of substrate S simultaneously in order to form the desired two- phase transparent hard coating.
- gas inlet Gl through which the reactive gas, e.g. nitrogen, is supplied into vacuum chamber 2, may be arranged in the area of silicon target Tl (or even the inlet extends through target Tl) , so that the surface of silicon target Tl is nitrided and thus silicon nitride is sputtered onto the surface of substrate S rather than pure silicon.
- argon is supplied into vacuum chamber 2 may be arranged in the area of aluminium target T2, so that the surface of aluminium target T2 is not nitrided but rather it is aluminium that is sputtered onto the surface of substrate S.
- aluminium has a reactivity sufficient to form the aluminium nitride on the surface of substrate S so that aluminium nitride is thus deposited on the surface of substrate S.
- reactivity can be improved by means of a high frequency voltage that is applied by a high frequency voltage source HF to substrate holder 3 or to the surface of substrate S.
- a heater H may be arranged within vacuum chamber 2 in order to heat substrate S to a certain temperature above room temperature, e.g. to about 200 0 C.
- substrate S may be preheated outside vacuum chamber 2 and be introduced into vacuum chamber 2 in a preheated state.
- room temperature e.g. to about 200 0 C.
- lower temperatures or even room temperature of substrate S may be possible, so that heating substrate S is only optional.
- the hardness of the thus obtained coatings (for the above-described example an AlN/Si 3 N 4 coating) of a glass substrate may be in the range of from 20 GPa to 25 GPa and may have a thickness of up to 2 ⁇ m (in particular l-2 ⁇ m) .
- the hardness is a Vickers hardness but does not necessarily need to be measured with the standard geometry for obtaining the Vickers hardness but may be measured with a geometry according to Berkovich (see, for example: G. M. Pharr, W. C. Oliver, F. R. Brotzen J. Mat. Res. 7 (1992), page 1 ff.; W. C. Oliver, G. M. Pharr, J. Mat. Res.
- the coating is resistant to corrosion.
- the size of the grains of the crystalline substance (here: AlN) is up to 20 nm and may be determined using x-ray diffraction methods and/or transmission electron microscopy.
- aluminium nitride As the crystalline substance (aluminium target) of the two-phase transparent hard coating. Transparency is at least given in the wavelength range of the visible light (i.e. between about 400 nm and 800 nm) .
- aluminium nitride (AlN) is a preferred crystalline substance, other substances can also be used.
- boron nitride BN; boron target
- gallium nitride GaN; gallium target
- indium nitride InN; indium target
- alloys thereof alloys thereof.
- the process for manufacturing the coating has been described by way of example using a PVD-process (here: magnetron sputtering) .
- CVD chemical vapour deposition
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- Chemical & Material Sciences (AREA)
- Dispersion Chemistry (AREA)
- Composite Materials (AREA)
- Life Sciences & Earth Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Surface Treatment Of Glass (AREA)
- Laminated Bodies (AREA)
Abstract
A coated substrate comprises a substrate (S) and a crystalline/amorphous two-phase coating of a hardness of at least 20 GPa. The coating comprises a crystalline substance and an amorphous substance as a matrix. The crystalline substance and the amorphous substance are immiscible and are deposited on the substrate (S) simultaneously. The crystalline/ amorphous two-phase coating is transparent at least to visible light. The crystalline substance is selected from the group consisting of aluminium nitride (AlN) , boron nitride (BN), gallium nitride (GaN) and indium nitride (InN), or alloys thereof, while the amorphous substance is silicon nitride (Si3N4).
Description
Coated substrate and process for the manufacture of a coated substrate
The invention relates to a coated substrate according to the preamble of the independent apparatus claim, as well as to a process for the manufacture of a coated substrate according to the independent process claim.
Coatings for wear protection that make use of nano- structures are generally known. For example, multi-layer structures such as WC/TiC (tungsten carbide/titanium carbide) as well as two-phase single-layer structures of immiscible substances that are deposited simultaneously (TiN/SiNx) . However, these coatings suffer from the disadvantage that they are non-transparent to visible light.
Conventional hard coatings that are used for ophthalmic applications (e.g. on glass or plastic substrates for spectacle glasses) are called "hard" but their hardness is only up to 10 GPa. They are usually made from silicon oxide or titanium oxide. Scratch resistant coatings having a hardness of about 20 GPa or more are extremely difficult to produce and are often limited to thin film thicknesses such as up to a few tens of nanometers (e.g. up to 50 nm) .
The instant invention now suggests a coated substrate comprising a substrate and a crystalline/amorphous two-phase coating having a hardness of at least 20 GPa. The coating comprises a crystalline substance and an amorphous substance as a matrix. The crystalline substance and the amorphous substance are immiscible and are deposited on the substrate
simultaneously so as to form the crystalline/amorphous two- phase coating. The crystalline substance is selected from the group consisting of aluminium nitride, boron nitride, gallium nitride and indium nitride, or alloys thereof, and the amorphous substance is silicon nitride. The term "immiscible" as used herein is to be understood such that up to 12% of silicon atoms can be contained in the crystalline phase, e.g. in the aluminium nitride phase. The crystalline substances (including the alloys thereof) show the desired hardness and are at the same time highly transparent at least to visible light, so that coatings obtained using these substances can be applied to glass which may be used, by way of example, for scanners, displays, sensors or architectural glass. Also, the coatings may be used for ophthalmic applications, such as for spectacle glasses or plastics.
In a preferred embodiment, the crystalline substance is aluminium nitride. Substrates using aluminium nitride as the crystalline substance are comparatively easy to manufacture in a well-controlled process, for example by using a physical vapour deposition process (PVD-process) as will be described" in more detail further below.
In still a further embodiment of the coated substrate the thickness of the coating is up to 2μm. Conventional transparent coatings having a thickness in this range are hitherto not known, since the substances used for manufacturing of the coatings were not suitable to obtain coatings having the afore-mentioned hardness.
A further aspect of the invention is related to a process for the manufacture of a coated substrate. In this
process a substrate is coated with a crystalline/amorphous two-phase coating having a hardness of at least 20 GPa. The crystalline substance and the amorphous substance are immiscible (as to the meaning of the term "immiscible" see above) and are applied to the substrate simultaneously so as to form the two phase crystalline/amorphous coating. The crystalline substance is selected from the group consisting of aluminium nitride, boron nitride, gallium nitride and indium nitride, or alloys thereof, and the amorphous substance is silicon nitride. More preferably, aluminium nitride is selected as the crystalline substance. The crystalline/amorphous two-phase coating formed on the substrate is transparent at least to visible light.
The crystalline and amorphous substances in accordance with a variant of the process are deposited on the substrate using a reactive physical vapour deposition (e.g. magnetron sputtering) process. In particular, for the deposition of the two substances at least two spatially separated targets may be used. Alternatively, a single compound target may be used, so that the compound target comprises an alloy of the two substances (e.g. Al, Si) in the respective required amounts. The unmixing of the two substances occurs even in this case, and in case of too low a reactivity of the deposited substances at the surface of the substrate, reactivity may be improved by supplying a high frequency voltage to the substrate holder or to the surface of the substrate (see below) . Also, prior to depositing the two substances on the substrate the substrate may be heated to a temperature above room temperature, for example to a temperature of 2000C.
In a further variant of the process a high frequency
bias voltage is applied between a holder of the substrate or the surface of the substrate, respectively, and a grounded wall of the vacuum chamber in which the coating is deposited on the substrate. It is thus possible to improve deposition of the crystalline/amorphous substances to form the crystalline/amorphous transparent two-phase coating.
In a further variant of the process an inert gas is supplied in the spatial area of the target of the crystalline substance, while in the spatial area of the target of the amorphous substance the reactive gas, e.g. nitrogen, is supplied.
Further advantageous embodiments or variants of the invention will now be described with the aid of the drawing, in which the only drawing figure shows an embodiment of an apparatus for performing an embodiment of the process according to the invention, which forms the coated substrate with the crystalline/amorphous two-phase transparent coating. The process described in the following is, however, only one example of how to perform the process according to the invention.
The physical vapour deposition apparatus 1 (here: a magnetron sputtering apparatus) comprises a vacuum chamber 2 that is evacuated by means of a suitable vacuum pump VP that is known per se. A typical range for the pressure within vacuum chamber 2 during the reaction is from 0.1 to 1 Pa. A holder 3 for a substrate S to be coated is arranged within vacuum chamber 2. Between substrate holder 3 (or between the surface of substrate S) and the grounded wall 20 surrounding vacuum chamber 2 a high frequency bias voltage may be
applied. This measure may assist the deposition process by generating a plasma in the area of the surface of substrate S thus improving the deposition of the substances of the coating as will be described further below.
Two targets Tl and T2 are arranged spatially separated within vacuum chamber 2. For example, target Tl may be a silicon target and target T2 may be an aluminium target. Targets Tl and T2 form the cathode of respective magnetrons Ml and M2, which serve for sputtering the substances onto the surface of substrate S. The magnetrons Ml and M2 assist in concentrating the plasma density in the area near targets Tl and T2 thus improving the sputtering rate.
Two gas inlets Gl and G2 are also shown in the drawing figure. They supply a reactive gas, e.g. nitrogen, and an inert gas (e.g. argon), respectively, into vacuum chamber 2. The supply rate may for example, be 2 seem nitrogen (seem = cmVs in a standard environment with a pressure of 101.3 kPa and a temperature of 00C) and 20 seem argon. However, the supply rate is dependent from the respective PVD-apparatus used and from the pumping speed of vacuum pump VP.
The sputtering of the substances is a known process and operates essentially such, that plasma ions of the argon plasma erode atoms or clusters of atoms from targets Tl and T2. The magnetrons Ml and M2 serve for local concentration of the plasma density in the area of targets Tl and T2 so as to increase the erosion rate. The power densities (power/area) at the targets are, for example, 10 W/cm2 at aluminium target T2 and about 1-2 W/cm2 at silicon target Tl. However, it is essential that the substances are sputtered simultaneously
onto the surface of substrate S so that the crystalline and amorphous substances are deposited on the surface of substrate S simultaneously in order to form the desired two- phase transparent hard coating.
In a specific embodiment it may be desirable that silicon nitride is directly sputtered onto the surface of substrate S, since silicon may only be comparatively poorly reactive on the surface of substrate S. For that reason, gas inlet Gl, through which the reactive gas, e.g. nitrogen, is supplied into vacuum chamber 2, may be arranged in the area of silicon target Tl (or even the inlet extends through target Tl) , so that the surface of silicon target Tl is nitrided and thus silicon nitride is sputtered onto the surface of substrate S rather than pure silicon. The gas inlet G2 through which the inert gas, e.g. argon, is supplied into vacuum chamber 2 may be arranged in the area of aluminium target T2, so that the surface of aluminium target T2 is not nitrided but rather it is aluminium that is sputtered onto the surface of substrate S. However, aluminium has a reactivity sufficient to form the aluminium nitride on the surface of substrate S so that aluminium nitride is thus deposited on the surface of substrate S.
Alternatively or in combination, reactivity can be improved by means of a high frequency voltage that is applied by a high frequency voltage source HF to substrate holder 3 or to the surface of substrate S. In addition, a heater H may be arranged within vacuum chamber 2 in order to heat substrate S to a certain temperature above room temperature, e.g. to about 2000C. Also, substrate S may be preheated outside vacuum chamber 2 and be introduced into vacuum
chamber 2 in a preheated state. However, also lower temperatures or even room temperature of substrate S may be possible, so that heating substrate S is only optional.
The hardness of the thus obtained coatings (for the above-described example an AlN/Si3N4 coating) of a glass substrate may be in the range of from 20 GPa to 25 GPa and may have a thickness of up to 2 μm (in particular l-2μm) . The hardness is a Vickers hardness but does not necessarily need to be measured with the standard geometry for obtaining the Vickers hardness but may be measured with a geometry according to Berkovich (see, for example: G. M. Pharr, W. C. Oliver, F. R. Brotzen J. Mat. Res. 7 (1992), page 1 ff.; W. C. Oliver, G. M. Pharr, J. Mat. Res. 7 (1992) page 1564 ff.; T. F. Page, S. V. Hainsworth, Surface Coating Technol. 61 81993, pages 201 ff.). Also, the coating is resistant to corrosion. The size of the grains of the crystalline substance (here: AlN) is up to 20 nm and may be determined using x-ray diffraction methods and/or transmission electron microscopy.
The afore-described variant of the process has been described for aluminium nitride (AlN) as the crystalline substance (aluminium target) of the two-phase transparent hard coating. Transparency is at least given in the wavelength range of the visible light (i.e. between about 400 nm and 800 nm) . While aluminium nitride (AlN) is a preferred crystalline substance, other substances can also be used. For example, it is as well possible to use boron nitride (BN; boron target) , gallium nitride (GaN; gallium target), or indium nitride (InN; indium target), or alloys thereof.
Also, the process for manufacturing the coating has been described by way of example using a PVD-process (here: magnetron sputtering) . However, it is also conceivable that other processes like CVD (chemical vapour deposition) be used.
Claims
1. Coated substrate comprising a substrate (S) and a crystalline/amorphous two-phase coating of a hardness of at least 20 GPa, the coating comprising a crystalline substance and an amorphous substance as a matrix, the crystalline substance and the amorphous substance being immiscible and being deposited on the substrate (S) simultaneously with the crystalline/amorphous two-phase coating being transparent at least to visible light, characterized in that the crystalline substance is selected from the group consisting of aluminium nitride (AlN) , boron nitride (BN) , gallium nitride (GaN) and indium nitride (InN), or alloys thereof, and in that the amorphous substance is silicon nitride (Si3N4) .
2. Coated substrate according to claim 1, wherein the crystalline substance is aluminium nitride (AlN) .
3. Coated substrate according to any one of the preceding claims wherein the thickness of the coating is up to 2μm.
4. Process for the manufacture of a coated substrate, in which a substrate (S) . is coated with a crystalline/ amorphous two-phase coating having a hardness of at least 20 GPa, wherein the crystalline substance and the amorphous substance are immiscible and are applied to the substrate (S) simultaneously so as to form the two phase crystalline/amorphous coating, with the crystalline and amorphous substances being selected such that the crystalline/amorphous two-phase coating formed on the substrate is transparent at least to visible light, characterized in that the crystalline substance is selected from the group consisting of aluminium nitride (AlN) , boron nitride (BN), gallium nitride (GaN) and indium nitride (InN), or alloys thereof, and in that the amorphous substance is silicon nitride (Si3N/j) .
5. Process according to claim 4, wherein aluminium nitride (AlN) is selected as the crystalline substance.
6. Process according to claim 4 or claim 5, wherein the crystalline and amorphous substances are deposited on the substrate (S) using a reactive physical vapour deposition process .
7. Process according to claim 6, wherein for the deposition of the two substances a single compound target is used.
8. Process according to claim 6, wherein for the deposition of the two substances at least two spatially separated targets (Tl, T2) are used.
9. Process according to any one of claims 6 or 7, wherein prior to depositing the two substances on the substrate (S) the substrate (S) is heated to a temperature up to a temperature above room temperature, e.g. to a temperature of 2000C.
10. Process according to any one of claims 6 to 9, wherein between a holder (3.) of the substrate (S) or the surface of the substrate (S) , respectively, and a grounded wall (20) of the vacuum chamber (2) in which the two substances are deposited on the substrate (S) , a high frequency bias voltage (HF) is applied.
11. Process according to any one of claims 8 to 10, wherein in the spatial area of the target (T2) of the crystalline substance an inert gas is supplied, and wherein in the spatial area of the target (Tl) of the amorphous substance the reactive gas, e.g. nitrogen, is supplied.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP06705400A EP1861337A1 (en) | 2005-03-23 | 2006-03-17 | Coated substrate and process for the manufacture of a coated substrate |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP05405259A EP1705162A1 (en) | 2005-03-23 | 2005-03-23 | Coated substrate and process for the manufacture of a coated substrate |
| PCT/CH2006/000160 WO2006099765A1 (en) | 2005-03-23 | 2006-03-17 | Coated substrate and process for the manufacture of a coated substrate |
| EP06705400A EP1861337A1 (en) | 2005-03-23 | 2006-03-17 | Coated substrate and process for the manufacture of a coated substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| EP1861337A1 true EP1861337A1 (en) | 2007-12-05 |
Family
ID=34942947
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| EP05405259A Withdrawn EP1705162A1 (en) | 2005-03-23 | 2005-03-23 | Coated substrate and process for the manufacture of a coated substrate |
| EP06705400A Withdrawn EP1861337A1 (en) | 2005-03-23 | 2006-03-17 | Coated substrate and process for the manufacture of a coated substrate |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| EP05405259A Withdrawn EP1705162A1 (en) | 2005-03-23 | 2005-03-23 | Coated substrate and process for the manufacture of a coated substrate |
Country Status (2)
| Country | Link |
|---|---|
| EP (2) | EP1705162A1 (en) |
| WO (1) | WO2006099765A1 (en) |
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102007033338B4 (en) | 2007-07-16 | 2010-06-02 | Schott Ag | Hard material-coated glass or glass-ceramic article and method for its production and use of the glass or glass-ceramic article |
| DE102011081234A1 (en) | 2011-08-19 | 2013-02-21 | Schott Ag | Glass ceramic, which is at least partially provided with a hard material layer |
| TWI479486B (en) * | 2011-11-15 | 2015-04-01 | Ritedia Corp | Light transmittive aln protective layers and associated devices and methods |
| WO2013160233A1 (en) | 2012-04-24 | 2013-10-31 | Empa Eidgenössische Materialprüfungs- Und Forschungsanstalt | Scratch resistant coating structure and use as optical filter or uv-blocking filter |
| DE102013102221B4 (en) | 2013-03-06 | 2014-11-13 | Schott Ag | Scratch-resistant glass article and method for producing scratch-resistant surfaces of glass articles |
| US9359261B2 (en) | 2013-05-07 | 2016-06-07 | Corning Incorporated | Low-color scratch-resistant articles with a multilayer optical film |
| US9703011B2 (en) | 2013-05-07 | 2017-07-11 | Corning Incorporated | Scratch-resistant articles with a gradient layer |
| US9366784B2 (en) | 2013-05-07 | 2016-06-14 | Corning Incorporated | Low-color scratch-resistant articles with a multilayer optical film |
| US9110230B2 (en) | 2013-05-07 | 2015-08-18 | Corning Incorporated | Scratch-resistant articles with retained optical properties |
| US9684097B2 (en) | 2013-05-07 | 2017-06-20 | Corning Incorporated | Scratch-resistant articles with retained optical properties |
| US10160688B2 (en) | 2013-09-13 | 2018-12-25 | Corning Incorporated | Fracture-resistant layered-substrates and articles including the same |
| US11267973B2 (en) | 2014-05-12 | 2022-03-08 | Corning Incorporated | Durable anti-reflective articles |
| US9335444B2 (en) | 2014-05-12 | 2016-05-10 | Corning Incorporated | Durable and scratch-resistant anti-reflective articles |
| US9790593B2 (en) | 2014-08-01 | 2017-10-17 | Corning Incorporated | Scratch-resistant materials and articles including the same |
| RU2608858C2 (en) * | 2015-06-17 | 2017-01-25 | Открытое акционерное общество "Ракетно-космическая корпорация "Энергия" имени С.П. Королёва" (ОАО "РКК "Энергия") | Glass with optically transparent protective coating and method of its production |
| KR102591067B1 (en) | 2015-09-14 | 2023-10-18 | 코닝 인코포레이티드 | Anti-reflective product with high light transmittance and scratch resistance |
| DE102015116644B4 (en) | 2015-10-01 | 2022-05-25 | Schott Ag | Substrates with scratch-resistant coatings with improved cleanability, processes for their production and their use |
| JP7228028B2 (en) | 2018-08-17 | 2023-02-22 | コーニング インコーポレイテッド | Inorganic oxide articles with thin durable antireflective structures |
| US20220009824A1 (en) | 2020-07-09 | 2022-01-13 | Corning Incorporated | Anti-glare substrate for a display article including a textured region with primary surface features and secondary surface features imparting a surface roughness that increases surface scattering |
| DE202021104774U1 (en) | 2021-09-06 | 2022-01-04 | Schott Ag | Scratch resistant glass item |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5165992A (en) * | 1991-07-02 | 1992-11-24 | Hoya Corporation | Hard coating film and optical elements having such coating film |
| US5558908A (en) * | 1994-11-07 | 1996-09-24 | Lanxide Technology Company, Lp | Protective compositions and methods of making same |
-
2005
- 2005-03-23 EP EP05405259A patent/EP1705162A1/en not_active Withdrawn
-
2006
- 2006-03-17 EP EP06705400A patent/EP1861337A1/en not_active Withdrawn
- 2006-03-17 WO PCT/CH2006/000160 patent/WO2006099765A1/en not_active Ceased
Non-Patent Citations (1)
| Title |
|---|
| See references of WO2006099765A1 * |
Also Published As
| Publication number | Publication date |
|---|---|
| EP1705162A1 (en) | 2006-09-27 |
| WO2006099765A1 (en) | 2006-09-28 |
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