EP1171797A1 - Structures and methods for controlling contamination of pixels near seals in amlcd tiles - Google Patents
Structures and methods for controlling contamination of pixels near seals in amlcd tilesInfo
- Publication number
- EP1171797A1 EP1171797A1 EP01904950A EP01904950A EP1171797A1 EP 1171797 A1 EP1171797 A1 EP 1171797A1 EP 01904950 A EP01904950 A EP 01904950A EP 01904950 A EP01904950 A EP 01904950A EP 1171797 A1 EP1171797 A1 EP 1171797A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- amlcd
- accordance
- seal
- producing
- tiles
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000000034 method Methods 0.000 title claims abstract description 57
- 238000011109 contamination Methods 0.000 title abstract description 10
- 230000007547 defect Effects 0.000 claims abstract description 45
- 239000004593 Epoxy Substances 0.000 claims abstract description 35
- 230000007423 decrease Effects 0.000 claims abstract description 17
- 239000004973 liquid crystal related substance Substances 0.000 claims abstract description 12
- 239000000463 material Substances 0.000 claims description 59
- 239000002904 solvent Substances 0.000 claims description 54
- 230000008569 process Effects 0.000 claims description 36
- 238000004519 manufacturing process Methods 0.000 claims description 30
- 239000000758 substrate Substances 0.000 claims description 28
- 125000006850 spacer group Chemical group 0.000 claims description 23
- 238000009736 wetting Methods 0.000 claims description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 13
- 230000003247 decreasing effect Effects 0.000 claims description 13
- 239000011521 glass Substances 0.000 claims description 11
- 238000004132 cross linking Methods 0.000 claims description 8
- 238000009826 distribution Methods 0.000 claims description 8
- 239000011159 matrix material Substances 0.000 claims description 8
- 239000000377 silicon dioxide Substances 0.000 claims description 6
- 230000000295 complement effect Effects 0.000 claims description 4
- 238000009792 diffusion process Methods 0.000 claims description 4
- 238000012216 screening Methods 0.000 claims description 3
- 239000011324 bead Substances 0.000 claims 2
- 230000001276 controlling effect Effects 0.000 claims 2
- 230000001105 regulatory effect Effects 0.000 claims 2
- 230000015572 biosynthetic process Effects 0.000 abstract description 5
- 239000004642 Polyimide Substances 0.000 abstract description 2
- 229920001721 polyimide Polymers 0.000 abstract description 2
- 230000005684 electric field Effects 0.000 abstract 1
- 230000010287 polarization Effects 0.000 abstract 1
- 238000003475 lamination Methods 0.000 description 19
- 238000013461 design Methods 0.000 description 17
- 239000011295 pitch Substances 0.000 description 8
- 239000000203 mixture Substances 0.000 description 7
- 239000000853 adhesive Substances 0.000 description 6
- 230000001070 adhesive effect Effects 0.000 description 6
- 238000012986 modification Methods 0.000 description 5
- 230000004048 modification Effects 0.000 description 5
- 230000001419 dependent effect Effects 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000013036 cure process Methods 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000001125 extrusion Methods 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000013557 residual solvent Substances 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 230000004913 activation Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- QXJJQWWVWRCVQT-UHFFFAOYSA-K calcium;sodium;phosphate Chemical compound [Na+].[Ca+2].[O-]P([O-])([O-])=O QXJJQWWVWRCVQT-UHFFFAOYSA-K 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 238000011990 functional testing Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- 239000003039 volatile agent Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1339—Gaskets; Spacers; Sealing of cells
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/13336—Combining plural substrates to produce large-area displays, e.g. tiled displays
Definitions
- This invention relates to design structures, materials and methods for fabricating active matrix liquid crystal display (AMLCD) tiles for assembly into tiled, flat panel displays having visually imperceptible seams and, more particularly, to methods for creating thin, inner perimeter seals for AMLCD tiles such that contamination of pixels adjacent such seams is minimized.
- AMLCD active matrix liquid crystal display
- the pitch between pixels across the seam is very dependent on the viewing distance, which in turn is dependent on the pixel pitch.
- Large pixel pitches and smaller than normal aperture ratios i.e., the ratio of light-emitting to dark space within the pixel allow more space for the seam components.
- the seal inner perimeter (SIP) tolerance must allow for waviness of the seal front near the pixels for the two neighboring tiles as well as other tolerance factors discussed hereinbelow. Waviness is the dimensional variation of the seal edge from a straight line.
- the seal edge characteristics depend on: 1) the seal material; 2) the pre-cure condition; 3) the lamination and cure process; 4) the panel surface structure; and also 5) the optimal design of the panel surface structure.
- the seal material is a filled, two part epoxy with glass spacers added for cell gap control and reactive and flow control solvents added for flow and curing enhancement .
- the formation of the seal results in an inner seal edge with three distinct areas.
- the bulk of the formed seal is predominantly "filled” epoxy.
- the edges of the seal contain a "clear” region, which is made up of lower molecular weight, unfilled epoxy, squeezed forward during the lamination and cure process.
- a very low molecular weight combination of residual solvent and epoxy wets the liquid crystal (LC) alignment layer, thereby creating a misalignment of the LC.
- This area is referred to as the "defect area", and can result in undesirable visible artifacts if positioned near or on an active pixel.
- United States Patent No. 5,963,281 and co-pending patent application Serial No. 09/369,465 disclose detailed designs and methods for decreasing the waviness of the seal front and an accompanying defect area. These designs utilize dams, channels between dams and wetting structures to help control the formation of the seal front in the SIP area. Even so, these designs leave an allocation of approximately 50 microns insurance for the defect area within each SIP. This amounts to a 100 micron portion of the pixel pitch which, in current designs with pixel pitches of 1 mm, amounts to 10% of the pitch.
- the present invention provides methods for decreasing defect areas at the seal inner edge within the SIP, thereby creating a narrower finished tile edge seal . Such improvements in seal control allow aperture ratios to be
- a pre-bake of the seal material in the range of 90 degrees C for a short time cross links the polymer sufficiently for supporting the assembly of the two substrates, CF and TFT, in readiness for lamination.
- the desired spacer spheres Prior to placement and registration of the two substrates, the desired spacer spheres, being approximately 5 ⁇ m diameter, create the LC cell gap and are distributed over the TFT substrates, the seal material having been preferably dispensed on the CF substrate.
- a second set of spacer spheres or rods is mixed in the epoxy prior to dispensing.
- the second set of spacers (preferably spheres) is of a complementary diameter to minimize cell gap variations near the seal .
- the TFT substrate is then registered and laminated to the CF substrate.
- the seal material is extruded from a wet width to a final width as the TFT and CF plates are squeezed or laminated together with a selected force or vacuum.
- a seal 800 microns wide results after lamination, when 5 micron spacers are used.
- the lamination process causes the seal inner edge or front to move 300 microns toward the pixels.
- the seal front becomes wavy, and a clear, unfilled, polymeric material appears in front of the silica-filled polymer material.
- the defect area (not easily detectable) appearing in front of the clear polymeric material.
- the solvent is thin and merely wets the surfaces without bridging the gap therebetween. If and when this contaminant reaches the pixels near the seam, a visible defect appears.
- the character of the defect may be a lack of electronic activation of a portion of the contaminated pixels (i.e., continuously lit portions of sub-pixels) or partially-lit larger areas containing many pixels.
- the defect area is then easily observed in a completed AMLCD panel filled with liquid crystal material by observing the panel when it is placed between uncrossed polarizers (black state) . The defect area appears lit when tested at these conditions.
- United States Patent No. 5,963,281 and patent application Serial Nos. 09/369,465 and 09/368,921 disclose examples of dams and/or channel like structures that direct the flow of the solvent at the front of the seal on the CF substrate to achieve defect areas as small as 50 ⁇ m .
- a further decrease in the defect area to substantially less than 50 ⁇ m is desired to achieve a narrow seal width for tiling high resolution, AMLCD flat panel displays (FPDs) .
- the current 50 micron insurance area between the dams and pixels constitutes approximately 25% of the allowed seam width. Consequently, this area has a large effect on the pixel design (e.g., decreasing aperture ratio, increasing pixel size, or decreasing resolution) for tiled displays.
- the present invention teaches methods for decreasing the size of the defect area at the seal front near the edge pixels at the SIP area on AMLCD tiles.
- the inventive methods allow the formation of extremely narrow perimeter seals on individual display tiles designed for assembly into tiled, flat panel displays (FPDs) .
- the methods of the instant invention work well with control structures such as dams and wetting structures.
- the individual, hermetically sealed tiles produced in accordance with the invention are suitable for use in tiled, flat panel displays having visually imperceptible seams.
- FIGURE 1 is a graph showing seal waviness as a function of seal width, with and without dams and wetting control structures on the color filter;
- FIGURE 2a is a top view of a typical epoxy seal between the CF and TFT substrates near pixels;
- FIGURE 2b is a sectional view of the epoxy seal shown in FIGURE 2a;
- FIGURE 3 is a top view of a typical epoxy seal between the CF and TFT substrates near pixels, showing selective wetting of the epoxy, creating a defect area along an interconnection line on a TFT substrate and along the edge of three sub-pixels;
- FIGURE 4 is a top view of a typical epoxy seal between the CF and TFT substrates near pixels in an SDTV FPD, showing the relationship between dams and wetting structures designed into the CF film layers to control the dimensions of the seal inner perimeter;
- FIGURE 5 is a top view of a typical epoxy seal between the CF and TFT substrates near pixels in an HDTV FPD, showing the relationship between dams and wetting structures designed into the CF thin films to control the dimensions of the SIP for an alternate, HDTV/XGA design.
- the invention features apparatus and methods for manufacturing AMLCD display tiles wherein the seal inner perimeter (SIP) width is controlled and a defect area at or near the seam regions of the display tiles is minimized.
- SIP seal inner perimeter
- AMLCD tile perimeter seals are formed in accordance with the present invention from seal materials having lower molecular weight components than material used in the prior art.
- the adhesive mixture has a portion of low viscosity cross linking solvent. Surface wetting occurs at the leading edge of the seal material as the seal is squeezed out during lamination of the color filter (CF) and the thin-film transistor (TFT) substrates.
- This solvent is designed to be assimilated into the cross linking matrix of epoxy molecules making up the seal.
- It is a reactive cross linking solvent for the epoxy, designed to be mixed in proportions so as to provide a robust cross linked epoxy matrix after curing. Before curing (cross linking) , the combination of the reactive solvent and the adhesive decrease the viscosity of the seal and provide the wetting ability of the adhesive epoxy seal.
- edge waviness increases with the width of the seal, increasing approximately 15 microns for every 100 microns increase in seal width, for seal widths in the range of 500 to 800 microns.
- FIGURE 1 is a graph showing seal edge waviness as a function of seal width and of the absence or presence of seal material flow control structures such as dams and dam separation channels.
- the seal material generally consists of an epoxy base mixed with a solvent which has a reactive component proportionally mixed with some volatile compound to achieve a desired viscosity.
- the mixture usually contains a substantial amount of finely ground silica, and glass spacer spheres or rods.
- the seal material may be deposited by screening or dispensing in the desired patterns from a small orifice, such as a pen, hollow needle, or syringe. Deposition is preferably on the CF substrates although deposition on the TFT, either alone or in addition to the CF, is also possible. After deposition, the seal is pre-baked and dried to a desired level of polymerization, usually referred to as "B" stage.
- FIGURES 2a and 2b there are shown top and sectional views, respectively, of a region of the epoxy seal near a pixel at the edge of an AMLCD panel .
- the seal edge appears to be made up of three distinct components: a 10 (_ KJ O M ⁇ -> in o in o in o in ⁇
- the contamination may run freely along some local feature, such as an interconnection line 206 on the TFT substrate 205, sometimes producing undesired visual effects or defect areas over entire pixels, and as much as several hundred microns or more near the inner edge of the seal .
- the commonly used process for laminating and curing the seal is to first prebake (partially cure or B stage) the seal in the range of 90 degrees C. This partially dries and also cross links some of the reactive solvent component to the epoxy molecules. The seal is then tacky and can be handled more easily. The substrates are then aligned to each other using fiducial marks for registration. With the increased viscosity of the seal due to prebake, the subsequent lamination process and flow of the seal material is an extrusion-like process requiring a combination of pressure and temperature to complete the sealing process.
- the cell gap between CF and TFT plates closes to meet the spacer diameters without creating splash or voids. It is important that the two substrates are flat and parallel, providing a consistent cell gap in the seal area. If this is not the case, the seal extrusion will not be uniform in directional flow and the midpoint of the center of the seal width will shift from the predetermined desired position.
- CF structure is designed into the perimeter of the tile outside of the seal, equal in height to the CF in the center area of the tiles. Spacers for equal cell gap are used there as well as in the tile interior. The temperature during the lamination process is increased in a profiled oven to the range of 180 degrees C where the cure or cross linking of the seal material becomes complete.
- the panel is then vacuum annealed before filling with the liquid crystal.
- residual solvent can boil out if it is not fully cross linked into the epoxy matrix.
- this step can be eliminated due to alternatives (composition, structure and method) developed to reduce the contamination at the front of the seal and thereby to decrease the defect area.
- the last molecules to cross link are the largest chains, while the smallest chains diffuse more rapidly in the epoxy matrix and find a reactive epoxy chain link for bonding. If the solvent molecules are in excess or do not find an epoxy bond, they are easily extruded ahead of the moving seal front by pressured permeation. That is, the lower viscosity solvent and lower molecular weight portion is preferentially extruded to the seal front .
- the defect area in front of the seal edge is determined by the solvent component that is not effectively cross linked to the epoxy during the B staging or during the temperature ramp to achieve a final cure state during the lamination process.
- the contamination front is therefore the rapidly permeating component of the solvent or smallest molecular chain lengths of the molecular weight distribution in the solvent.
- AMLCD tile perimeter seals are formed in accordance with the present invention from the same materials as those used in the prior art.
- the component fractions are different and are optimized in process to provide a smaller defect area.
- the two lowest molecular weight solvents that form in the seal front by pressure permeation during lamination (extrusion) must be decreased.
- the volatile solvent which is added to the seal material to manage the viscosity for dispensing, should be minimized either in the formulation or by more complete drying prior to lamination.
- the reactive solvent must be accurately balanced to the molecular content of the base epoxy so that none is left over after the final curing reaction. For this to happen, a temperature hierarchy is used to optimize the ability of the reactive solvent molecules to diffuse throughout the base epoxy matrix and find enough reactive sites for complete bonding.
- Seal components are mixed in lots which are stored and used in manufacturing in a variety of practices.
- the solid filler material generally Si0 2
- the polymer components are substantially variable in molecular reactivity determined by molecular content and thermal history.
- a further complication is that the processes of lamination in time and temperature, force, and seal front excursion vary with the particular design being manufactured.
- the invention depends on a method of functional test to determine the defect area characteristics for the particular manufacturing process and design being practiced.
- the sequence is as follows:
- a staged temperature profile in the process sequence can be modified to contain a temperature stage in the range of 50 degrees C as well as a prebake typically at 90 degrees C, to allow selective diffusion of the lower molecular weight chains in the reactive solvent .
- This allows such lower molecular weight chains time to bond to a reactive epoxy termination or to be evaporated prior to lamination.
- an optimized prebake temperature time profile beginning at substantially lower temperatures than 90 degrees C may be used to selectively bond the lower molecular weight components fraction of the reactive solvent and also to increase the amount of solvent evaporated.
- Still another method of control is to decrease the fraction of reactive solvent component to preferably be in balance with the molecular epoxy content, rather than to produce an excess of solvent.
- Still another method of control is to reduce the volatile solvent so that none is left after prebake.
- dams, dam separations, and wetting structures previously disclosed in the aforementioned related issued patents and patent applications.
- the dams and wetting structures designed and processed into the CF are preferably located in an optimum position closer to the pixels which depends on the dimension of the defect area. This is most easily understood by citing an example wherein the finished tile and resultant SIP area is controlled to be a certain width, say 135 ⁇ m, as disclosed in copending patent application serial no. 09/490,776, filed January 24, 2000 and shown in FIGURE 5.
- Tiles are approximately dimensioned by making 1 3 tiled FPD arrays for HDTV and/or XGA resolution.
- the dams are located approximately 25 ⁇ m from the pixels as a buffer zone to prevent the contamination from reaching the pixel. This is a reduction of 25 microns over the dimensions used for the SDTV tiled FPD.
- the dams for the HDTV resolution are also narrower: about 20 microns and spaced apart about 25 microns, creating a channel in the CF
- a modification to the sequential drawing of the seal is preferable to increase the strength by redundancy.
- more than one seal width may be applied by sequential and continuous drawing of the seal to the wide seal sides . This procedure compensates for the removal of seal by cutting in the predetermined narrow seal sides. Redundancy is also used on the narrow seal sides to provide a supporting system during cutting.
- improved wetting structures are projected with multiple dams and channels that are designed to create greater capillary forces to control the solvent front as the seal is formed during lamination.
- These designs and processes may be optimized for adhesion strength by removing the weaker materials interfacing the seal.
- the edge of the seal where it is cut may be selectively chosen from the material hierarchy.
- the selection can be made to be one of polyimide, ITO, dielectric layer, or the substrate glass.
- a method for modifying the process by selecting a material and/or solvent ratio and adjusting the manufacturing process may be stated as a series of steps :
- defect area is larger than a predetermined specification, decrease the seal volume or the solvent proportion by a small decrement (one percent of solvent component) and proceed through steps (3) to (9) and repeat this cycle, decreasing solvent each time, until the predetermined specification is met; alternatively, if the defect is larger than the predetermined specification, increase the prebake time in step (4) by approximately 30% and repeat steps (2) to (9) , adding 30% time increments to the prebake in step (4) until the predetermined specification is met; alternatively, if the defect is larger than the predetermined specification, add a gel stage step in the range of 50 to 70 degrees C equal to prebake in time, and repeat this cycle increasing the gel stage time in equal increments until the predetermined specification is met; and
- step (10) Standardize the aforementioned, optimized parameters for future displays. It is obvious that in a complex manufacturing operation such as assembling a tiled, flat panel display, the least intrusive changes to operations are preferable.
- the preferable step (10) changes the solvent cut of the seal material external to the assembly line, whereas alternative steps may also be substituted but may have a greater effect on the assembly line.
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- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Liquid Crystal (AREA)
Abstract
Description
Claims
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US17744800P | 2000-01-21 | 2000-01-21 | |
| US177448P | 2000-01-21 | ||
| PCT/US2001/001911 WO2001053886A1 (en) | 2000-01-21 | 2001-01-19 | Structures and methods for controlling contamination of pixels near seals in amlcd tiles |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| EP1171797A1 true EP1171797A1 (en) | 2002-01-16 |
Family
ID=22648634
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| EP01904950A Withdrawn EP1171797A1 (en) | 2000-01-21 | 2001-01-19 | Structures and methods for controlling contamination of pixels near seals in amlcd tiles |
Country Status (4)
| Country | Link |
|---|---|
| EP (1) | EP1171797A1 (en) |
| JP (1) | JP2003520995A (en) |
| KR (1) | KR20010108364A (en) |
| WO (1) | WO2001053886A1 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4635519B2 (en) * | 2004-08-30 | 2011-02-23 | カシオ計算機株式会社 | Liquid crystal display element |
| JP5285808B2 (en) * | 2010-04-06 | 2013-09-11 | シャープ株式会社 | Manufacturing method of liquid crystal display panel |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5499127A (en) * | 1992-05-25 | 1996-03-12 | Sharp Kabushiki Kaisha | Liquid crystal display device having a larger gap between the substrates in the display area than in the sealant area |
| US5781258A (en) * | 1996-06-13 | 1998-07-14 | Rainbow Displays, Inc. | Assembling and sealing large, hermetic and semi-hermetic, h-tiled, flat-paneled displays |
| JPH10268332A (en) * | 1997-03-24 | 1998-10-09 | Sharp Corp | Liquid crystal display device and method of manufacturing the same |
-
2001
- 2001-01-19 EP EP01904950A patent/EP1171797A1/en not_active Withdrawn
- 2001-01-19 JP JP2001554117A patent/JP2003520995A/en active Pending
- 2001-01-19 KR KR1020017012003A patent/KR20010108364A/en not_active Withdrawn
- 2001-01-19 WO PCT/US2001/001911 patent/WO2001053886A1/en not_active Ceased
Non-Patent Citations (1)
| Title |
|---|
| See references of WO0153886A1 * |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2003520995A (en) | 2003-07-08 |
| WO2001053886A1 (en) | 2001-07-26 |
| KR20010108364A (en) | 2001-12-07 |
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