EP0628173A1

EP0628173A1 - Process for producing optical mode form adapters

Info

Publication number: EP0628173A1
Application number: EP94901726A
Authority: EP
Inventors: Tomas Brenner
Original assignee: BRENNER Tomas
Current assignee: BRENNER, TOMAS
Priority date: 1992-12-29
Filing date: 1993-12-22
Publication date: 1994-12-14
Also published as: WO1994015231A1

Abstract

L'invention appartient au domaine des communications par fibres optiques dans des réseaux optiques, dans lesquels des circuits optoélectroniques intégrés sur des puces semiconductrices sont interconnectés par des fibres optiques. Les modes des petites puces guides d'ondes excentriques des circuits optoélectroniques intégrés sont adaptés, par des adaptateurs dits intégrés des formes des modes optiques, aux modes des fibres plus grandes et symétriques afin d'assurer des couplages optiques efficaces entre les puces guides d'ondes et les fibres. L'invention concerne un procédé de production de tels adaptateurs des formes des modes sur des puces semiconductrices. On génère premièrement des noyaux de guides d'ondes verticaux pointus au moyen d'un masque ayant une géométrie spéciale à l'aide de processus de gravure épitaxiale à diffusion limitée, puis on génère des guides d'ondes superposés. Ce procédé est utile pour la production en série de tranches entières (en anglais "full wafer processing").The invention belongs to the field of optical fiber communications in optical networks, in which optoelectronic circuits integrated on semiconductor chips are interconnected by optical fibers. The modes of the small eccentric waveguide chips of the integrated optoelectronic circuits are adapted, by so-called integrated adapters of the shapes of the optical modes, to the modes of the larger and symmetrical fibers in order to ensure effective optical couplings between the guide chips of waves and fibers. The invention relates to a method for producing such adapters of the shapes of the modes on semiconductor chips. First, sharp vertical waveguide cores are generated by means of a mask having a special geometry using diffusion-limited epitaxial etching processes, and then superimposed waveguides are generated. This process is useful for the mass production of full wafers (in English "full wafer processing").

Description

Process for producing optical mode adapter

State of the art

In fiber-optic communication [1], data is transmitted with optical signals through glass fibers [2], which allow high bit rates (GHz) to be transmitted. The wavelength range relevant for fiber optic communication extends from 0.8 to 1.6 micrometers and is determined by III - N

Semiconductor materials covered. The optical signals are processed on these III - N semiconductor chips in integrated opto - electronic circuits in active and passive electro - optical waveguide components [3]. To manufacture them, thin semiconductor layers are usually applied epitaxially to semiconductor crystal substrates (e.g. InP, GaAs) and then structured.

Apart from cavity waveguides, the light guidance in optical waveguides [3] is based on the principle that a medium with a higher refractive index (the so-called waveguide core) is surrounded by a medium with a lower refractive index (the waveguide cladding). Only those modes that meet the Maxwell equations can propagate. Waveguides can have no (cut-off - waveguide), one (monomode - waveguide) or several (multimode - waveguide) modes. Monomode waveguides are primarily used in fiber optic communication.

The propagation of light in optical waveguides on semiconductor chips, so-called chip waveguides, takes place in the longitudinal direction, the z direction. The wave fronts are then perpendicular to it

- l - (x, y) - plane. In the case of absorbing or reinforcing media, the wave fronts are curved.

The x direction is perpendicular to the waveguide layer and is defined as a vertical or transverse direction. Analogously, the y direction is parallel to the waveguide layer and is defined as a horizontal or lateral direction.

Mode forms of the optical modes that propagate in waveguides are determined by the following parameters: wavelength, polarization, geometry of the waveguides and refractive index differences of the waveguide core and waveguide cladding. In particular, the waveguide dimensions and mode sizes decrease towards shorter wavelengths.

The mode shapes are calculated by solving the Maxwell equations with finite element or similar programs [4] on fast computers. The chip waveguide modes are, for wavelengths between approximately 0.8 and 1.6 micrometers, mostly eccentric (eccentricity = 1 to 5) and have mode diameters (large axes) of 1 to 5 micrometers. A distinction is essentially made between two types of chip waveguides: a) the so-called "buried waveguides" (in English: "buried waveguides"), in which the actual waveguide layer is laterally delimited by materials with a lower refractive index, b) the "strip waveguides""(inEnglish:" rib - loaded waveguides "," ridge waveguides "," stripe - loaded waveguides "or the like), in which the waveguide layer is laterally continuous and is guided with etched strips. Niele variations of these two basic types are known. These small eccentric chip waveguide modes couple poorly to optical systems. This phenomenon is intensified even with increasingly shorter wavelengths (for example in II-VI semiconductor materials). In particular, in contrast to the small eccentric modes of the chip waveguide components, the monomode or multimode fibers (glass fibers) used in fiber optic communication have larger and symmetrical modes [2]. Monomode fibers even have rotationally symmetrical modes with diameters of typically 8-10 micrometers

~ (measured at intensity 1 / e).

In optical networks, efficient optical coupling between fibers and chip waveguides is of paramount importance [5], [6]. This coupling was previously associated with high optical losses, because on the one hand the mode shapes of chip waveguides and fibers did not match well, and on the other hand their exact adjustment in the sub-micrometer range was extremely difficult.

In order to achieve high optical coupling efficiencies [5], [6] between chip waveguides and optical fibers, the following conditions must be met:

(i) The reflections at the transitions must be minimized. This requirement is met by anti-reflection layers, or by refractive index adjustment by means of filling drops between chip facets and fiber ends. (ii) Adaptation of the small eccentric chip waveguide modes to the larger and symmetrical fiber modes, for which the following possibilities exist:

- Modes can only be adjusted using optical systems (microlenses). However, this is difficult because the fiber modes are symmetrical and the chip waveguide modes are eccentric. Furthermore, an exact and stable adjustment of all components (three additional degrees of freedom per component) is required. Another disadvantage is the increased space requirement.

- Adaptation of the modes with the help of fiber lenses, which focus fiber modes on half the large or even smaller diameter. However, it does not make sense to focus the fiber modes too much, since adjustment tolerances between

Fibers and chip waveguides become drastically worse with decreasing light spot size.

- Adaptation of the modes with the help of integrated optical components on the semiconductor chips. For this purpose, the waveguide layers are to be deformed in such a way that the chip waveguide modes are adapted to the fiber modes in the direction of propagation of the light (so-called mode adaptation).

This invention solves the last-mentioned optical mode adaptation on semiconductor chips to optical systems, in particular to optical fibers.

Definition: An adiabatic mode adaptation means slow variations in the mode shape as a result of a change in the waveguide in the direction of propagation, usually due to a change in the geometry [7]. With ideal adiabatic mode adjustments, no light is emitted. Optical components that fulfill this task are called mode shape adapters.

Your advantages are obvious: - Possibility of integration on the semiconductor chips with integrated opto-electronic circuits and thus suitable for mass production.

- Micro lenses between the chips and fibers are completely eliminated or their requirements are reduced.

- Fiber lenses are completely eliminated or at least moderately focusing fiber lenses are sufficient.

- Improvement of the adjustment tolerances with increasing fashion sizes, which saves time and money during assembly.

Chip waveguide dimensions can either be widened or pointed in the direction of propagation, which can be done both laterally and transversely, or both simultaneously. With an adiabatic expansion of the waveguide core, the optical modes of the core layer adapt and also become larger, they are guided more and more. The production of lateral adiabatically widened chip waveguides presents no difficulties, since this can be accomplished using conventional photolithography. The creation of vertically adiabatically expanded chip waveguides is possible but unattractive because the waveguide layer thickness would correspond to the vertical extent of the mode because of the strong optical guidance. Adapted to monomode fibers, this would require 8-10 Micrometer-thick waveguide core - layers grow epitaxially.

The optical modes follow an adiabatic tapering of the waveguide core until they reach a minimal extent. As the dimensions of the waveguide core continue to decrease, the modes become larger because the guidance becomes weaker. At zero layer thickness, there are only unaffected radiation modes (cut-off - waveguide). To produce laterally tapered waveguides, high-energy light sources (UN X-Ray) or even electron beam systems are required, since only then can the required sub-micron resolution be achieved [8]. For a vertically adiabatic waveguide adaptation, the waveguide layer, which is a few 0.1 micrometers thick, has to be tapered over a length of a few 100 micrometers.

The difficulty in the production of mode shape adapters is therefore that of vertically tapered waveguide cores in a ratio of 1/100

(Height / length), or even less.

Both with lateral and vertical tapering of the waveguide core, the modes continue to propagate without guidance until they couple into the optical system, or they run against the tips in a "higher-level" waveguide that is capable of guiding larger modes: Laterally, this requirement can with deeply etched, widened strips, for example; vertically, for example, n / n ⁺ structures or dilute quantum structures come into question. Various methods for producing vertically tapered waveguide cores of the mode shape adapters are known:

(i) Quasi-adiabatic vertically tapered waveguide cores [9] can be produced in the waveguide cores with the aid of very thin Aetz-Stop layers (number ~ 5 to 10). With material-selective etching agents, the white core cores are sharpened in many (corresponding to the number of Aetz-Stop layers) photolithography and etching steps. (Ii) Adiabatic, vertically sharpened waveguide cores can be produced with the so-called "shadow mask technique" [10]. After the epitaxial growth of the waveguide cores, a mask is evaporated, the semiconductor chip being partially covered with a disk attached at a small distance. The shadow effect of this disc creates a vertically tapered mask. This can then be transferred to the waveguide core using a conventional etching process.

A similar technique for producing adiabatic, vertically tapered waveguide cores is based on the fact that the photoresist mask is exposed by multiple exposures in a so-called stepper mask aligner, a device which allows the mask to be shifted and exposed step by step. The structure is then cut into the conventional etching process

Transfer waveguide cores.

(iii) Adiabatically vertically tapered waveguide cores can also be produced by immersing the semiconductor chip from its facets at a defined rate in a wet chemical acid [11]. To understand the invention, the terms “reaction”, “diffusion” and “migration” will be briefly explained here. If a (semiconductor crystal) surface reacts with a gas or a liquid, the speed of the processes running is limited - either by the reaction itself, which means that more educts will be available at all times than are actually required for the process to run. In this case one speaks of "reaction-limited" processes [12], - or the speed of the processes is limited by supplying the starting materials or removing the products, ie the migration of the particles involved in the process. In this case, the processes are so-called "migration-limited" or "diffusion-limited" processes [12], [13]. Boundary conditions such as the type of reaction (s), surface quality, concentration of the particles, currents, temperature, incidence of light, etc. determine their course.

It is the object of the invention: to create optical mode shape adapters on semiconductor chips which, by means of lateral and vertical adiabatic adaptations of the optical modes which emerge from integrated optoelectronic circuits, can be adapted to the modes of optical systems or light-guiding fibers with high efficiencies, or vice versa, adapt the modes emerging from the optical systems or fibers to those of the integrated optoelectronic circuits. A method is specified as to how such mode shape adapters can be produced inexpensively using simple means.

The object is achieved according to the method described in the characterizing part of the main claim.

The advantages of mode shape adapters, which ensure efficient optical couplings between integrated optoelectronic circuits and optical systems or light-conducting fibers, are well known. Also exist

Process for producing such mode shape adapters. However, as already discussed in detail, their production is very complex. It should be remembered that the method can be produced by stepwise shifting of the mask with exposure of the underlying photoresist layer or by material-selective wet etching with the aid of Aetz stop layers of quasi-adiabatic vertically tapered waveguide cores.

The essence of the described invention is based on the combination of one vertically tapered waveguide core with additionally vertically and preferably laterally widened superordinate waveguide. In particular, the invention includes an extremely simple manufacturing process for such highly efficient mode shape adapters. The improvement over the existing methods is achieved in that with the help of only one mask (ie with only one photolithography step) and subsequent diffusion - limited etching process and diffusion - limited growth process, using the same mask, very simply mode mold adapters can be produced on entire wafers. It is therefore possible to produce, with simple means, both waveguide cores pointed towards the fibers and superordinate, vertically and laterally widening waveguides. Because of its large process tolerances, the process is very well suited for the production of integrated optoelectronic circuits on semiconductor chips on entire wafers.

- ιo - The invention is described with reference to the accompanying figures:

1 shows an overview sketch of an integrated optoelectronic circuit on a semiconductor chip, coupled to four (as an example) fiber inputs and outputs. The mode shape adapters are also shown, with which efficient fiber-chip waveguide couplings can be achieved.

Fig. 2 shows the layer package after the first epitaxy step.

Fig. 3 shows top view and longitudinal section through the mode adapter. The

Time development of etching, in arbitrary time units, for tapered waveguides is drawn with lines in longitudinal section.

Fig. 4 shows top view, longitudinal section and cross sections of the mode adapter after etching. The vertically tapered waveguide core produces a fiber-adapted optical mode.

Fig. 5 shows top view, longitudinal section and cross sections of the mode adapter after overgrown with the upper waveguide jacket. The waveguide jacket, which becomes thicker towards the tip of the waveguide core, promotes this

Enlargement of the mode and thus an efficient fiber / chip waveguide coupling. Fig. 6 shows top view, longitudinal section and cross sections of the mode shape adapter after the waveguide etching. The top view and cross sections show the lateral expansion of the waveguide. The vertical expansion of the fashion is shown schematically in longitudinal section.

Fig. 1 shows a semiconductor chip (100), coupled to four input fibers

(900) and four output fibers (900 '). In general, a semiconductor chip couples to M * N fibers with M, N = 0, 1, 2, 3 .... The integrated optoelectronic circuit (200) is drawn as a "black box" on the semiconductor chip (100). It contains electronic, optical and electro - optical components, which the optical signals (wavelength

1.5 micrometers) of the input fibers (900) received and processed. They are then forwarded as optical signals into the output fibers (900 ') or as electronic signals with the aid of metallic feed lines (not shown). The chip waveguide (400) connects the integrated optoelectronic circuit (200) with fibers (900) & (900 ').

The mode adaptations of the fiber modes to the chip waveguide modes of the integrated electro-optical components are achieved by means of optical mode shape adapters (300) on the semiconductor chip.

The optical fibers (900) & (900 ') are either straight, broken or, as indicated in FIG. 1, provided with fiber lenses. The fiber lenses focus the fiber modes on the chip waveguide facets.

2 shows a possible variant of a layer package (500) in the material system InP / InGaAsP. An InP wafer (510) doped with donors (~ 2 E18) serves as the substrate. The layers grown with gas phase epitaxy [14] are all undoped. The following are grown one after the other: an InP buffer layer (520) 2 micrometers thick, a first InGaAsP (wavelength = 1.25 micrometers) Aetz-Stop layer

(530) of 3 nanometers in thickness, which is used for process control but is practically invisible to the optical modes, a lower InP intermediate layer (540) of 0.1 micrometers in thickness, an InGaAsP (wavelength = 1.25 micrometers) waveguide core (550) 0.6 micron thick, an upper InP intermediate layer (560) from

0.2 micrometers thick, a second InGaAsP (wavelength = 1.25 micrometers) Aetz - Stop layer (570) with a thickness of 3 nanometers and an InP top layer (580) with a thickness of 1.5 micrometers.

The layer package described here represents only one of many possibilities. The general validity for each layer package, which could also be produced in several epitaxy and process steps, remains: (i) The doping of the substrate and of the epitaxial layers are adapted to the requirements of the integrated optoelectronic components, (ii) the waveguide core (550) can consist of several layers. (iii) The cover layer (580) can be any layer package with 0 the only condition that the total height for the subsequent in

Fig. 3 described process for producing the vertically tapered waveguide cores of the mode adapter is sufficient. It can be designed in such a way that it can be used as optical and / or electronic components in the field of integrated optoelectronic circuits

5 (200) or in the area of fashion shape adapters.

10

15

20th

25th 3 shows top view (one period) and longitudinal section through a mode adapter. The manufacture of the mode adapter is to be explained on the basis of these drawings:

After the epitaxial layers (500) have grown, a special mask (310) with a sensibly periodic structure, for example a sawtooth (FIG. 1), is defined for the production of the mode shape adapter. Only one period is shown in the supervision. The mode shape adapters are then etched in a diffusion - limited dry or wet process [12]. The special mask geometry (310) generates a concentration gradient of the reactants or etching products in a longitudinal (propagation) z -

Direction that is used to vertically taper the waveguide cores.

The geometric shape of the mask (310) determines the shape of the waveguide core - tip. Essentially, the contour shape of the

Transfer the mask into the vertical course of the waveguide core. The sawtooth shown here with linear serrations will produce approximately linearly tapered waveguide cores. Computer simulations [7] show that exponential or polynomial functions have advantages compared to linear forms. In particular, shorter mode shape adapters can be produced.

In order to avoid edge effects in diffusion-limited etching, it is advantageous to use several identical or similar mode shape adapters. 0 periodically arranged, and possibly even mirrored on the y axis.

The development of time, in arbitrary units of time of the etching, is drawn in with longitudinal lines in broken lines. 5

The mask material (310) must be resistant to the etching and growth processes required to produce the mode adapter.

The process tolerances for the etching step described here are very large, approximately ± 10%, and can be achieved with a correspondingly higher covering layer

(580) can still be enlarged. Variations in etching depth or homogeneity only affect the lengths of the mode adapter (300). In a "good" mask design, it is provided that the mode shape adapter be made excessively long, which will not result in any significant optical losses, but prevents those that are too short

Mode shape adapters light is emitted.

Larger or smaller areas within the integrated optoelectronic circuit (200) can be covered as long as this does not impair the 20 optical paths. Thus the top layer

(580), as already explained in FIG. 2, can also be used for certain integrated optoelectronic components.

25th Fig. 4 shows top view, longitudinal section and cross sections at the beginning (A) in the

Middle (B) and at the end (C) of the mode shape adapter after diffusion-limited wet etching, as has been described in connection with FIG. 3.

The waveguide core (550) tapering to a point in the mode shape adapter is referred to below as (555).

Intermezzo:

Since it is difficult to achieve an exact and homogeneous etching depth over a large area, for example the area of the integrated optoelectronic circuit (200), in the manufacture of the mode shape adapters, one can, for example, use very thin layers of other material compositions that are suitable for the functionality of the integrated optoelectronic components is irrelevant. This transition between two material compositions can be used to stop the etching process with material-selective etching agents. As a variant, a transition between two layers with different material compositions or dopants can be grown at the desired locations, if the integrated optoelectronic components permit this.

The function of the Aetz - Stop layers can be explained using the three cross sections (A), (B) and (C). After etching, an area that is not exactly defined in the area of the integrated optoelectronic circuit (200) 0 nated remainder (process tolerance) of the top layer (580) over the second

Aetz - stop layer (570) still present. This remainder is removed in a controlled manner using material - selective etching agents. At the same time, the lower intermediate layer (540) is removed except for the first Aetz-Stop layer (530).

10

15

20th

25th Fig. 5 shows top view, longitudinal section and cross sections at the beginning (A), in the

Middle (B) and at the end (C) of the mode shape adapter after overgrowing with gas phase epitaxy [14] of the upper InP waveguide jacket (590) of 1.5 micrometers in height, for example.

In gas phase epitaxy, the growth rate is influenced with a mask that is not a growth surface [13]. A gradient of the epitaxy educts from the mask to the mask openings arises, which results in an increase in the growth rate.

With the mask already used for diffusion limited etching

(310) the growth rate of the waveguide cladding (590) is increased towards the ends of the mode shape adapters, ie the facets.

The consequently widened, upper waveguide jacket (590), which then runs into the superordinate waveguide, promotes the desired adiabatic enlargement of the mode in the mode shape adapter and prevents the optical axis from being pressed down, which in turn allows shorter mode shape adapters.

Fig. 6 shows top view, longitudinal section and cross sections of the finished

Mode shape adapter after etching the strip waveguide.

The waveguide strips are produced in a "conventional" etching step. In order to achieve an adiabatic deep etching of the strips in the mode shape adapters, use is made, for example, of material-selective etching agents which etch up to the pointed waveguide core (555) or the first etching stop layer.

Finally, the chip facets are split between the waveguide core tip and the end of the first Aetz stop layer (530). The

Splitting tolerances are a few 10 to 100 micrometers due to the Aetz - Stop layer (530).

The vertical expansion of the fashion is drawn schematically in longitudinal section. The tapered waveguide core (555) has been drawn transparently for better understanding. The three schematic mode profiles show waveguide modes in the integrated optoelectronic circuit, shortly before the end of the mode shape adapter and just before the facet.

The modes are performed in the last part of the mode shape adapter, for example with an n / n ⁺ structure. The semiconductor substrate doped relatively higher with donors (smaller refractive index) is responsible for the vertical guidance. The n / n ⁺ waveguide thus consists of 0 n ⁺ - InP substrate (lower shell), n - InP grown (core), "air"

(upper coat). The transition from the waveguide core to the n / n ⁺ guide takes place adiabatically towards the waveguide core tip. Instead of an n / n ⁺ structure, thinned quantum structures or similar structures are also conceivable. It is even conceivable that

5 facets at the waveguide core - split off, so that the superordinate waveguide is unnecessary.

The lateral mode adaptation (y direction) is achieved with waveguides (400), which are widened from the width of the constant shape at the beginning of the mode shape adapter towards the ends of the mode shape adapter.

See supervision and cross sections.

The strip waveguides discussed here are only one of many options for lateral mode control. Buried waveguides, 15 for example, are another variant. Their structuring could then already take place before the overgrowth with the upper waveguide sheath (590).

20th

25th credentials

[1] J.M. Senior: Optical Fiber Communications', Prentice-Hall International, Inc., London, 1985, ISBN 0-13-638222 3.

[2] Takanori Okoshi: 'Optical Fibers': Academic Press, 1982, ISBN 0-12-

525260-9. [3] T. Tamir: 'Guided-Wave Optoelectronics', Springer Series 2nd Edition,

1990, ISBN 0-387-52780-X.

[4] P. Sylvester: 'A general high-order finite-element waveguide analysis program', IEEE Transactions on Microwave Theory and Techniques, Vol. MTT-17, pp. 204 - 207, April 1969. [5] H. Kogelnik: 'Coupling and Conversion Coefficients for Optical Modes', Microwave Research Institute Symposia Series 14, New York,

1964, pp. 333-347. [6] D. Marcuse: 'Loss Analysis of Single-Mode Fiber Splices', The Bell

System Technical Journal, Vol. 56, May-June 1977, pp 703-718. [7] T. B. Koch, J. B. Davies, and D. Wickramasinghe, 'Finite element / finite difference propagation algorithm for integrated optical devices',

Electron. Lett., 1989, vol. 25, pp. 514 - 516. [8] R. Zengerle, H. Brueckner, H. Olzhausen and A. Kohl: 'Low loss fiber-chip coupling by buried laterally tapered InP / InGaAsP waveguide structure', Electron. Lett., 1992, vol. 28, pp. 631-632. [9] TL Koch, U. Koren, G. Eisenstein, MG Young, M. Oron, CR Giles,

BI. Miller: 'Tapered waveguide InGaAs / InGaAsP multi-quantum-well lasers', IEEE Photonics Techn. Lett., Vol. 2, 1990, pp. 88-90. [10] G. Mueller, B. Stegmueller, H. Westermeier, G. Wenger: 'Tapered InP / InGaAsP waveguide structure for efficient fiber-chip coupling', Electron. Lett., 1991, vol. 27, pp. 1836-1838.

[11] T. Brenner, W. Hunziker, M. Smit, M. Bachmann, G. Guekos and H. Melchior: 'Vertical InP / InGaAsP tapers for low loss optical fiber-waveguide coupling', Electron. Lett., 1992, vol. 28, pp. 2040-2041. [12] P.H.L. Notten, J.E.A.M. van den Meerakker, J.J. Kelly: 'Etching of III - V Semiconductors', Elsevier Advanced Technology 1991, Oxford

UK, ISBN 0-946395-84-5. [13] Y.D. Galeuchet and R Roentge 'Selective area MOVPE of GalnAs / InP heterostructures on masked and nonplanar (100) and (111) Substrates', Journal of Crystal Growth, Vol. 107, pp. 147-150, 1991. [14] G.B. Stringfellow: 'Organometallic Vapor-Phase Epitaxy', Academic

Press, Inc. 1989 UK, ISBN 0-12-673849-8.

definitions

Claims

1. Process for the production of optical mode form adapters in III-V semiconductor materials which efficiently couple the optical chip waveguide modes of integrated optoelectronic circuits on semiconductor chips to optical systems, in particular monomode or multimode fibers, the optical mode adaptation in the mode form adapters It is thereby achieved that both the size and the eccentricity of the chip waveguide modes are matched to that of the optical systems, in that the modes at the transition from the chip to the optical systems by an increasingly weakly guiding waveguide core and

- At the same time be adapted by an increasingly leading superordinate waveguide, or vice versa, characterized in that

- The waveguide core is tipped vertically towards the chip facets in a diffusion-limited etching process and

- The superordinate waveguide is widened towards the chip facets in a diffusion-limited epitaxial process and - The waveguide is widened laterally against the chip facets with laterally leading structures.

2. The method according to claim 1, characterized in that for tapering the waveguide cores and for expanding the superordinate waveguide Masks with a specific, predetermined geometry are used with the property that the ratios of open chip areas to chip areas covered with a mask, according to predetermined functions, decrease towards the facets.

3. The method according to claim 2, characterized in that a top layer package (580) is used for tapering the waveguide cores and for expanding the superordinate waveguide.

4. The method according to claim 3, characterized in that both for etching and for epitaxy the same masks, more specifically predetermined

Geometry (310) is used.

5. The method according to claim 3, characterized in that the mask (310) is used only for etching but not for epitaxy.

6. The method according to claim 4 or 5, characterized in that a diffusion-limited wet etching process is used.

7. The method according to claim 4 or 5, characterized in that a diffusion-limited, bromine (bromine solutions, hydrogen bromide)

Solutions etc.) containing wet etching process is used.

8. The method according to claim 4 or 5, characterized in that a diffusion-limited dry etching process is used.

9. The method according to claim 4 or 5, characterized in that transitions of epitaxial layers of different material compositions or dopings are used to stop the etching process with material - or doping - selective etching processes.

10. The method according to claim 1 to 9, characterized in that the optical mode shape adapters are produced in II-VI semiconductor crystals.