[go: up one dir, main page]

EP0324435B1 - Méthode sans contact pour le nettoyage des surfaces avec un palier à coussin et d'air plan - Google Patents

Méthode sans contact pour le nettoyage des surfaces avec un palier à coussin et d'air plan Download PDF

Info

Publication number
EP0324435B1
EP0324435B1 EP19890100346 EP89100346A EP0324435B1 EP 0324435 B1 EP0324435 B1 EP 0324435B1 EP 19890100346 EP19890100346 EP 19890100346 EP 89100346 A EP89100346 A EP 89100346A EP 0324435 B1 EP0324435 B1 EP 0324435B1
Authority
EP
European Patent Office
Prior art keywords
gas
film
cleaning device
cleaning
vacuum
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
EP19890100346
Other languages
German (de)
English (en)
Other versions
EP0324435A2 (fr
EP0324435A3 (en
Inventor
Robert L. Dean
Lydia J. Young
Lee H. Veneklasen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Etec Systems Inc
Original Assignee
Etec Systems Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Etec Systems Inc filed Critical Etec Systems Inc
Publication of EP0324435A2 publication Critical patent/EP0324435A2/fr
Publication of EP0324435A3 publication Critical patent/EP0324435A3/en
Application granted granted Critical
Publication of EP0324435B1 publication Critical patent/EP0324435B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B5/00—Cleaning by methods involving the use of air flow or gas flow
    • B08B5/02—Cleaning by the force of jets, e.g. blowing-out cavities

Definitions

  • This invention is directed to a non-contacting method of cleaning surfaces by removing small particulate matter, on the order of a few microns, therefrom.
  • This invention provides a simple, non-contacting and effective way to clean particulates of a size as low as 1 or 2 microns from these substrate surfaces.
  • the present invention achieves the foregoing object in a method of cleaning very small particulates, on the order of 1 or 2 microns, from a surface, comprising the steps of: forming a thin gas film on said surface between a cleaning device and said surface by impinging pressurized gas on said surface, said gas film being planar and having the thickness in the order of 20 to 30 microns and providing a high velocity gas flow between said cleaning device and said surface, and moving said film across said surface.
  • the gas film being also a gas bearing, supports the cleaning device and thus forms a self-regulating gap between the cleaning device and the surface so that the cleaning device itself never contacts the surface to be cleaned.
  • the cleaning device comprises a plurality of bores for directing gas onto the surface and an opening for vacuum. Preferably the bores are arranged in a circle and the opening for vacuum is located centrally thereof.
  • the gas film thickness is a function of incoming gas pressure and vacuum.
  • Embodiments of the invention include creating areas of turbulence and eddy currents for aiding in the particulate removal. These areas are created by forming pockets in the cleaning device to disturb the flow of gas.
  • the method includes the use of ionized gas and moving the cleaning device relative to the surface or moving the surface relative to the cleaning device.
  • a gas film 10 is formed between adjacent surfaces 12 and 14 which also forms a gas bearing to space the surface 12 of a cleaning device 16 from the surface 14 of a substrate 20.
  • This space is also denoted in the drawing as gap G.
  • the cleaning device is often referred to as a "puck", and by adjusting the gas pressure appropriately, a small gap G, on the order of 20 to 50 microns, and hence a high velocity flow of gas can be achieved.
  • This high velocity flow of gas removes small particulates, on the order of a few microns, from the surface 14 and also provides a non-contacting method of cleaning the surface 14.
  • the puck 16 comprises a circular body with a plurality of bores 22 arranged preferably in a circle as shown (although other geometries are feasible such as an oval, straight line, etc) about a centrally located larger opening 24.
  • the bores 22 are connected by a circular conduit 26 and a bore 30 to a source of gas under pressure illustrated as a block diagram 32 and the central opening 24 is connected to a vacuum pump 34 also illustrated as a block diagram; both being shown in figure 3.
  • the bores 22 are oriented to direct pressurized gas onto the surface 14 and the opening 24 is oriented to remove gas and particulate matter in the area of the center of the surface 12.
  • the puck is in two pieces 16a and 16b for manufacturing purposes and are suitably coupled together, with the conduit 26 and bore 30 for the flow of pressurized gas being formed by and between the two pieces.
  • the size of the gap G is self regulating and is determined by the gas pressure of about 0.4 Nmm ⁇ 2 (60 psi) and a vacuum about 1 to 13 mbar (1 to 10 Torr). With such values and with the bores 22 being about 0.25mm (0.010 inches) in diameter, the resulting thickness of gap G lies between 20 and 50 microns providing the correct conditions to remove particles as low as 1 or 2 microns with high efficiency.
  • Figure 3 shows one way of cleaning the surface 14 by mounting the substrate 20 on a revolving vacuum chuck 36 and moving the cleaning device radially to clean the entire surface 14.
  • the puck surface 12 is provided with a circular relief groove 40 of about 1mm (0.04 inches) in depth surrounding the opening 24 and an outer ledge 42 of about the same size.
  • the given depth is only by way of example and other depth values are feasible as will be apparent to those skilled in the art.
  • further turbulence and eddy currents in the high velocity flow are created by providing the bores 22 with counterbores 22a of about 25 ⁇ m to 50 ⁇ m (0.001 to 0.002 inches) in depth.
  • the given depth is only by way of example and other depth values are feasible as will be apparent to those skilled in the art.
  • the removal of small particulate matter can further be enhanced by the use of an ionized gas from the source 32.

Landscapes

  • Cleaning Or Drying Semiconductors (AREA)
  • Cleaning In General (AREA)
  • Cleaning And De-Greasing Of Metallic Materials By Chemical Methods (AREA)

Claims (8)

  1. Méthode pour nettoyer de très petites particules, de l'ordre de 1 ou 2 microns, sur une surface comportant les étapes consistant à :
    former un mince film de gaz sur ladite surface entre un dispositif de nettoyage et ladite surface en projetant un gaz pressurisé sur ladite surface,
    ledit film de gaz étant plan et ayant une épaisseur de l'ordre de 20 à 30 microns et fournissant un flux de gaz à vitesse élevée entre ledit dispositif de nettoyage et ladite surface, et à
    déplacer ledit film sur ladite surface.
  2. Méthode selon la revendication 1 incluant l'étape consistant à fournir , de plus, une source de vide agissant en coopération avec ledit film de gaz.
  3. Méthode selon la revendication 2 dans laquelle ladite source de vide est au centre dudit film de gaz.
  4. Méthode selon la revendication 3 incluant l'étape consistant à créer ledit film de gaz en projetant le gaz dans un agencement entourant une zone de vide placée au centre.
  5. Méthode selon la revendication 4 dans laquelle ledit agencement de projection du gaz est circulaire.
  6. Méthode selon la revendication 4 incluant en plus l'étape de formation de surfaces de turbulence entre ladite zone de vide et ledit agencement de projection de gaz.
  7. Méthode selon la revendication 4 incluant, de plus, l'étape de formation de surfaces de turbulence dans ledit film de gaz à l'extérieur de la zone entre ledit agencement de projection de gaz.
  8. Méthode selon l'une quelconque des revendications précédentes incluant, de plus, l'étape d'ionisation dudit film de gaz.
EP19890100346 1988-01-11 1989-01-10 Méthode sans contact pour le nettoyage des surfaces avec un palier à coussin et d'air plan Expired - Lifetime EP0324435B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US142173 1980-04-21
US14217388A 1988-01-11 1988-01-11

Publications (3)

Publication Number Publication Date
EP0324435A2 EP0324435A2 (fr) 1989-07-19
EP0324435A3 EP0324435A3 (en) 1990-10-31
EP0324435B1 true EP0324435B1 (fr) 1993-09-29

Family

ID=22498827

Family Applications (1)

Application Number Title Priority Date Filing Date
EP19890100346 Expired - Lifetime EP0324435B1 (fr) 1988-01-11 1989-01-10 Méthode sans contact pour le nettoyage des surfaces avec un palier à coussin et d'air plan

Country Status (4)

Country Link
EP (1) EP0324435B1 (fr)
JP (1) JP2755643B2 (fr)
CA (1) CA1315923C (fr)
DE (1) DE68909422T2 (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4016089A1 (de) * 1990-05-18 1991-11-21 Siemens Nixdorf Inf Syst Vorrichtung zur simultanen entladung und entstaubung flaechiger substrate insbesondere in der fotomikrolithographie
JP2567191Y2 (ja) * 1992-04-13 1998-03-30 株式会社伸興 パネル体の除塵装置
DE19950140C2 (de) * 1999-10-18 2001-10-31 Kessler Kg Maschf Verfahren und Vorrichtung zum Behandeln von Körpern nach dem Bruchtrennen
JP4016598B2 (ja) * 2001-01-16 2007-12-05 株式会社日立製作所 半導体装置の製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3915739A (en) * 1974-07-12 1975-10-28 Montreal Method of cleaning foreign matter from a cavity in a semiconductor
US4026701A (en) * 1975-02-24 1977-05-31 Xerox Corporation Gas impingement and suction cleaning apparatus
JPS5821742A (ja) * 1981-07-31 1983-02-08 Nec Corp 位置合わせ露光装置
JPS61208051A (ja) * 1985-03-12 1986-09-16 Nec Corp 縮少投影露光装置
JPS6292642U (fr) * 1985-11-29 1987-06-13

Also Published As

Publication number Publication date
JP2755643B2 (ja) 1998-05-20
CA1315923C (fr) 1993-04-13
DE68909422T2 (de) 1994-01-27
JPH01225125A (ja) 1989-09-08
EP0324435A2 (fr) 1989-07-19
EP0324435A3 (en) 1990-10-31
DE68909422D1 (de) 1993-11-04

Similar Documents

Publication Publication Date Title
US4956024A (en) Non-contacting method of cleaning surfaces with a planoar gas bearing
EP0794566B1 (fr) Masque de séparation de plaquette pour un mandrin support de substrat et procédé de fabrication
EP0201240B1 (fr) Dispositif pour supporter et/ou convoyer une plaque au moyen d'un fluide sans contact corporel
KR20060107841A (ko) 표면 세척용 장치 및 방법
EP1268109A2 (fr) Support de piece a usiner sans contact
EP0595071B1 (fr) Dispositif de retenue pour plaquette semi-conductrice
CA2233981A1 (fr) Dispositif destine a contenir un fluide
EP1119023A3 (fr) Méthode de maintien d'un substrat et système de maintien d'un substrat
EP2267529B1 (fr) Pellicule
EP0806793A2 (fr) Un masque isolé de distance de disque pour un support de substrat et procédé de fabrication d'un tel masque
CN1104341A (zh) 锯切数字微镜器件后的似大圆片加工
KR960008999A (ko) 현상처리장치 및 현상처리방법
US6217655B1 (en) Stand-off pad for supporting a wafer on a substrate support chuck
EP0362838A3 (fr) Une méthode pour fabriquer des dispositifs semi-conducteurs
EP0324435B1 (fr) Méthode sans contact pour le nettoyage des surfaces avec un palier à coussin et d'air plan
EP0924078A3 (fr) Filtre pour éliminer les impuretés d'un fluide et sa méthode de fabrication
ATE220244T1 (de) Träger für scheibenförmige gegenstände, insbesondere siliziumscheiben
EP0806798A2 (fr) Support mandrin pour un substrat, le support ayant une couche pour le confinement d'un contaminant et procédé de fabrication
JPH07136885A (ja) 真空チャック
WO2001042962A2 (fr) Procede, systeme et appareil permettant de fournir des donnees de message concernant des evenements associes a des sites web
JP3252074B2 (ja) 真空吸着装置、真空吸着装置用シール具および真空吸着方法
US20030010358A1 (en) Clean method and apparatus for vacuum holding of substrates
JPH0778864A (ja) 半導体製造装置及び半導体装置の製造方法
US6001180A (en) Semiconductor wafer holder with CVD silicon carbide film coating
ITMI20030204U1 (it) Supporti elettrostatici mobili trasportabili per substrati

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

AK Designated contracting states

Kind code of ref document: A2

Designated state(s): DE FR GB IT NL

PUAL Search report despatched

Free format text: ORIGINAL CODE: 0009013

AK Designated contracting states

Kind code of ref document: A3

Designated state(s): DE FR GB IT NL

RAP1 Party data changed (applicant data changed or rights of an application transferred)

Owner name: ETEC SYSTEMS, INC.

17P Request for examination filed

Effective date: 19910304

17Q First examination report despatched

Effective date: 19920327

GRAA (expected) grant

Free format text: ORIGINAL CODE: 0009210

AK Designated contracting states

Kind code of ref document: B1

Designated state(s): DE FR GB IT NL

ITF It: translation for a ep patent filed
REF Corresponds to:

Ref document number: 68909422

Country of ref document: DE

Date of ref document: 19931104

ET Fr: translation filed
PLBE No opposition filed within time limit

Free format text: ORIGINAL CODE: 0009261

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: NO OPPOSITION FILED WITHIN TIME LIMIT

26N No opposition filed
PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: FR

Payment date: 19990118

Year of fee payment: 11

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: FR

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20000929

REG Reference to a national code

Ref country code: FR

Ref legal event code: ST

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: DE

Payment date: 20010103

Year of fee payment: 13

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: GB

Payment date: 20010105

Year of fee payment: 13

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: NL

Payment date: 20010123

Year of fee payment: 13

REG Reference to a national code

Ref country code: GB

Ref legal event code: IF02

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: GB

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20020110

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: NL

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20020801

Ref country code: DE

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20020801

GBPC Gb: european patent ceased through non-payment of renewal fee

Effective date: 20020110

NLV4 Nl: lapsed or anulled due to non-payment of the annual fee

Effective date: 20020801

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: IT

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES;WARNING: LAPSES OF ITALIAN PATENTS WITH EFFECTIVE DATE BEFORE 2007 MAY HAVE OCCURRED AT ANY TIME BEFORE 2007. THE CORRECT EFFECTIVE DATE MAY BE DIFFERENT FROM THE ONE RECORDED.

Effective date: 20050110