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EP0268159A2 - Circuit amplificateur à semi-conducteur - Google Patents

Circuit amplificateur à semi-conducteur Download PDF

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Publication number
EP0268159A2
EP0268159A2 EP87116350A EP87116350A EP0268159A2 EP 0268159 A2 EP0268159 A2 EP 0268159A2 EP 87116350 A EP87116350 A EP 87116350A EP 87116350 A EP87116350 A EP 87116350A EP 0268159 A2 EP0268159 A2 EP 0268159A2
Authority
EP
European Patent Office
Prior art keywords
transistors
transistor
amplifier circuit
amplifier
output
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP87116350A
Other languages
German (de)
English (en)
Other versions
EP0268159A3 (fr
Inventor
Abutorab Dr.-Ing. Bayati
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Siemens Corp
Original Assignee
Siemens AG
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG, Siemens Corp filed Critical Siemens AG
Publication of EP0268159A2 publication Critical patent/EP0268159A2/fr
Publication of EP0268159A3 publication Critical patent/EP0268159A3/fr
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
    • H03K5/01—Shaping pulses
    • H03K5/02—Shaping pulses by amplifying
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/30—Single-ended push-pull [SEPP] amplifiers; Phase-splitters therefor
    • H03F3/3066—Single-ended push-pull [SEPP] amplifiers; Phase-splitters therefor the collectors of complementary power transistors being connected to the output

Definitions

  • the invention relates to a semiconductor amplifier circuit according to the preamble of claim 1.
  • the object of the invention is to improve the amplification behavior of the transistor stages, in particular for standardized signals (TTL or ECL).
  • the semiconductor amplifier circuit according to the invention has the features specified in claim 1 and further enables the advantageous embodiments described in subclaims 2 and 3 and the advantageous application of the invention according to claim 4.
  • An amplifier stage according to the invention consists of four transistors which, based on the zero point (ground), operate completely symmetrically because of the phase distortion. While the first two transistors function as an impedance converter, the next two transistors form two current sources that work in push-pull. The two diodes, which are connected in parallel with opposite poles, ensure that the amplifier does not go into saturation and thus the amplitude of its Output signal remains limited. When using Si diodes z. B. reaches a limit of ⁇ 0.7 V.
  • the semiconductor amplifier circuit according to the invention consists of one or more amplifier stages. The amplifier stages are identical to each other except for the output stage and are connected in series. The output stage is usually a TTL or an ECL comparator.
  • reception amplifiers can be built which can be used in a frequency range up to 100 MHz and which, depending on the frequency range, achieve an amplification of up to 30 dB per stage.
  • the receiving amplifier With the first two transistors, the receiving amplifier can be matched to virtually any signal source in terms of impedance. Since such receive amplifiers cannot be operated in saturation regardless of the number of stages, the signal zero crossings are therefore preserved in an unadulterated manner.
  • the input voltage UE is connected to ground via an input resistor R1.
  • the bases of input transistors T1 and T2 are connected together at the input, the input transistor T1 being an NPN transistor and the input transistor T2 being a PNP transistor.
  • the collector of the transistor T1 is connected to the positive supply voltage + U, and the collector of the input transistor T2 is connected to the negative supply voltage -U.
  • the collectors of the transistors T1 and T2 are connected to ground via capacitors C1 and C2.
  • the emitter of transistor T1 is via an RC parallel circuit R3, C4 led to the base of the downstream transistor T4 (npn).
  • diode D2 and R4 From the base of the series connection there is a diode D2 and R4 in the forward direction to the negative supply voltage -U.
  • the same connection is made between the input transistor T2 and T3 (pnp), but here the series connection of a diode D1 and R5 is connected to the positive supply voltage + U.
  • the emitter of transistor T4 is connected to the negative supply voltage via a resistor R6, and the emitter of transistor T3 is connected to the positive supply voltage via a resistor R7.
  • the collectors of the transistors T3 and T4 are connected together and form the output of this amplifier stage.
  • a parallel circuit consisting of antipolar diodes D3 and D4 is connected to this output via a capacitor C5, which is connected to ground with the other switching point.
  • a capacitor C5 which is connected to ground with the other switching point.
  • the output signal of this amplifier stage is tapped via a capacitor C6 and a resistor R8 connected to ground and can be fed to a multiplicity of amplifier stages of the same structure.
  • FIG. 1 shows a further amplifier stage, which is also of the same design, as described above.
  • a comparator K is connected to the output of this amplifier stage, which is also connected to the supply voltages + U and -U and has a resistor R9 connected to ground at its first input E1 and a resistor R10 connected to ground at its second input E2.
  • the supply voltage inputs are connected to capacitors C7 and C8 connected to ground.
  • At the output A of the comparator K which also represents the output of the entire amplifier arrangement, there are signal lines for a TTL or There is an ECL-standardized signal that is made available to a subscriber station on a bus line, for example.
  • FIG. 2 shows a voltage diagram as it arises at the output of each amplifier stage. This characteristic curve with the limitation of the output voltage, with which the amplifier is prevented from going into saturation, is achieved by the diodes D3 and D4 connected in parallel with opposite poles, which cause a voltage limitation at ⁇ 0.7 V for Si diodes.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Amplifiers (AREA)
EP87116350A 1986-11-13 1987-11-05 Circuit amplificateur à semi-conducteur Withdrawn EP0268159A3 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE3638708 1986-11-13
DE19863638708 DE3638708A1 (de) 1986-11-13 1986-11-13 Halbleiterverstaerkerschaltung

Publications (2)

Publication Number Publication Date
EP0268159A2 true EP0268159A2 (fr) 1988-05-25
EP0268159A3 EP0268159A3 (fr) 1989-03-08

Family

ID=6313828

Family Applications (1)

Application Number Title Priority Date Filing Date
EP87116350A Withdrawn EP0268159A3 (fr) 1986-11-13 1987-11-05 Circuit amplificateur à semi-conducteur

Country Status (2)

Country Link
EP (1) EP0268159A3 (fr)
DE (1) DE3638708A1 (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0293921B1 (fr) * 1987-06-05 1993-12-08 Miyasaka, Katsuyuki Dispositif électronique pour mettre en oeuvre une diode électroluminescente
GB2477572A (en) * 2010-02-09 2011-08-10 Toshiba Res Europ Ltd A class AB wideband high-power current output push-pull amplifier
EP2760131A1 (fr) * 2013-01-28 2014-07-30 Krohne AG Réseau d'accord d'impédance

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3051905A (en) * 1960-03-01 1962-08-28 Gen Dynamics Corp Phase locked trigger generator
US3465170A (en) * 1966-05-11 1969-09-02 Sylvania Electric Prod Limiter circuit
DE1562099A1 (de) * 1968-01-30 1970-02-19 Standard Elek K Lorenz Ag Transistorverstaerker mit Gegentaktendstufe in Emitterschaltung,deren Transistoren vom Versorgungsgleichstrom in Reihe durchflossen werden,vorzugsweise Traegerfrequenzverstaerker

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0293921B1 (fr) * 1987-06-05 1993-12-08 Miyasaka, Katsuyuki Dispositif électronique pour mettre en oeuvre une diode électroluminescente
GB2477572A (en) * 2010-02-09 2011-08-10 Toshiba Res Europ Ltd A class AB wideband high-power current output push-pull amplifier
GB2477572B (en) * 2010-02-09 2012-01-04 Toshiba Res Europ Ltd High power wideband amplifier and method
US8907728B2 (en) 2010-02-09 2014-12-09 Kabushiki Kaisha Toshiba High power wideband amplifier and method
EP2760131A1 (fr) * 2013-01-28 2014-07-30 Krohne AG Réseau d'accord d'impédance

Also Published As

Publication number Publication date
DE3638708A1 (de) 1988-05-26
EP0268159A3 (fr) 1989-03-08

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Inventor name: BAYATI, ABUTORAB, DR.-ING.