[go: up one dir, main page]

EA201000408A1 - Кристаллографически текстурированная металлическая подложка, кристаллографически текстурированное устройство, фотогальванический элемент и фотогальванический модуль, содержащий такое устройство, и способ нанесения тонких слоев - Google Patents

Кристаллографически текстурированная металлическая подложка, кристаллографически текстурированное устройство, фотогальванический элемент и фотогальванический модуль, содержащий такое устройство, и способ нанесения тонких слоев

Info

Publication number
EA201000408A1
EA201000408A1 EA201000408A EA201000408A EA201000408A1 EA 201000408 A1 EA201000408 A1 EA 201000408A1 EA 201000408 A EA201000408 A EA 201000408A EA 201000408 A EA201000408 A EA 201000408A EA 201000408 A1 EA201000408 A1 EA 201000408A1
Authority
EA
Eurasian Patent Office
Prior art keywords
alloy
metal substrate
textured
crystallographic
applying
Prior art date
Application number
EA201000408A
Other languages
English (en)
Other versions
EA016990B1 (ru
Inventor
Жан-Пьер Реяль
Пьер-Луи Рейдэ
Пере Рока Кабаррокас
Яссин Джеридан
Original Assignee
Арселормитталь-Стейнлесс Энд Никель Эллойз
Эколь Политекник
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Арселормитталь-Стейнлесс Энд Никель Эллойз, Эколь Политекник filed Critical Арселормитталь-Стейнлесс Энд Никель Эллойз
Publication of EA201000408A1 publication Critical patent/EA201000408A1/ru
Publication of EA016990B1 publication Critical patent/EA016990B1/ru

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C38/00—Ferrous alloys, e.g. steel alloys
    • C22C38/08—Ferrous alloys, e.g. steel alloys containing nickel
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0254—Physical treatment to alter the texture of the surface, e.g. scratching or polishing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H10F71/1221—The active layers comprising only Group IV materials comprising polycrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H10F77/1692—Thin semiconductor films on metallic or insulating substrates the films including only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H10F77/703—Surface textures, e.g. pyramid structures of the semiconductor bodies, e.g. textured active layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H10F77/707—Surface textures, e.g. pyramid structures of the substrates or of layers on substrates, e.g. textured ITO layer on a glass substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12993—Surface feature [e.g., rough, mirror]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
    • Y10T428/263—Coating layer not in excess of 5 mils thick or equivalent
    • Y10T428/264—Up to 3 mils
    • Y10T428/265—1 mil or less

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Laminated Bodies (AREA)
  • Crystallography & Structural Chemistry (AREA)

Abstract

Объектом настоящего изобретения является кристаллографически текстурированная металлическая подложка (1), содержащая соединительную поверхность (2) и поверхность (3), предназначенную для нанесения тонкого слоя покрытия, при этом указанную кристаллографически текстурированную металлическую подложку (1) выполняют из сплава с гранецентрированной кристаллической структурой и с преобладающей кубической кристаллографической текстурой {100} <001>, при этом поверхность (3), предназначенная для нанесения тонкого слоя, содержит зерна (4) с преобладающими кристаллографическими плоскостями {100}, параллельными поверхности (3), предназначенной для нанесения на нее тонкого слоя покрытия. Согласно изобретению сплав является ферроникелевым сплавом, в состав которого входят, в мас.% по отношению к общей массе сплава: Ni ≥ 30, Cu ≤ 15, Cr ≤ 15, Со ≤ 12, Mn ≤ 5, S < 0,0007, Р < 0,003, В < 0,0005, Pb < 0,0001, при этом процентное содержание никеля, хрома, меди, кобальта и марганца таково, что сплав отвечает следующему условию: 34% ≤ (Ni + Cr + Cu/2 + Со/2 + Mn), при этом сплав содержит до 1 мас.% одного или нескольких раскисляющих элементов, выбранных из группы, в которую входят кремний, магний, алюминий и кальций, остальными элементами сплава являются железо и примеси.
EA201000408A 2007-08-31 2008-08-28 Кристаллографически текстурированная металлическая подложка, кристаллографически текстурированное устройство, фотогальванический элемент и фотогальванический модуль, содержащий такое устройство, и способ нанесения тонких слоев EA016990B1 (ru)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP07301336.9A EP2031082B1 (fr) 2007-08-31 2007-08-31 Substrat métallique texture cristallographiquement, dispositif texture cristallographiquement, cellule et module photovoltaique comprenant un tel dispositif et procédé de dépot de couches minces
PCT/FR2008/051542 WO2009030865A2 (fr) 2007-08-31 2008-08-28 Substrat metallique texture cristallographiquement, dispositif texture cristallographiquement, cellule et module photovoltaïque comprenant un tel dispositif et procede de depot de couches minces

Publications (2)

Publication Number Publication Date
EA201000408A1 true EA201000408A1 (ru) 2010-10-29
EA016990B1 EA016990B1 (ru) 2012-08-30

Family

ID=38872469

Family Applications (1)

Application Number Title Priority Date Filing Date
EA201000408A EA016990B1 (ru) 2007-08-31 2008-08-28 Кристаллографически текстурированная металлическая подложка, кристаллографически текстурированное устройство, фотогальванический элемент и фотогальванический модуль, содержащий такое устройство, и способ нанесения тонких слоев

Country Status (16)

Country Link
US (1) US9309592B2 (ru)
EP (1) EP2031082B1 (ru)
JP (1) JP5592259B2 (ru)
KR (1) KR101537305B1 (ru)
CN (2) CN101842508B (ru)
AU (1) AU2008294609B2 (ru)
BR (1) BRPI0815837B1 (ru)
CA (1) CA2698126C (ru)
EA (1) EA016990B1 (ru)
ES (1) ES2522582T3 (ru)
IL (1) IL205494A (ru)
MY (1) MY150031A (ru)
PL (1) PL2031082T3 (ru)
PT (1) PT2031082E (ru)
WO (1) WO2009030865A2 (ru)
ZA (1) ZA201001452B (ru)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
PL2031082T3 (pl) * 2007-08-31 2015-03-31 Aperam Alloys Imphy Metalowe podłoże o teksturze krystalograficznej, układ o teksturze krystalograficznej, ogniowo fotowoltaiczne i moduł fotowoltaiczny zawierające taki układ i sposób powlekania cienkimi warstwami
JP5589777B2 (ja) * 2010-11-05 2014-09-17 Ｊｆｅスチール株式会社 太陽電池基板用クロム含有フェライト系鋼板
JP5589776B2 (ja) * 2010-11-05 2014-09-17 Ｊｆｅスチール株式会社 太陽電池基板用クロム含有フェライト系鋼板
JP5625765B2 (ja) * 2010-11-05 2014-11-19 Ｊｆｅスチール株式会社 太陽電池基板用クロム含有フェライト系鋼板
JP5971890B2 (ja) * 2010-12-16 2016-08-17 セイコーインスツル株式会社 時計部品の製造方法および時計部品
FR2971086B1 (fr) * 2011-01-31 2014-04-18 Inst Polytechnique Grenoble Structure adaptee a la formation de cellules solaires
WO2012106282A1 (en) * 2011-02-04 2012-08-09 Osram Sylvania Inc. Wavelength converter for an led, method of making, and led containing same
WO2012162071A1 (en) * 2011-05-20 2012-11-29 The Board Of Trustees Of The University Of Illinois Silicon-based electrode for a lithium-ion cell
FR2975833B1 (fr) 2011-05-24 2013-06-28 Ecole Polytech Anodes de batteries li-ion
KR101422609B1 (ko) * 2011-11-17 2014-07-24 한국생산기술연구원 텍스처 구조를 갖는 열팽창 제어형 플렉서블 금속 기판재
CN105132809B (zh) * 2015-09-02 2017-05-31 光昱（厦门）新能源有限公司 一种用于太阳能电池丝网印刷台面的合金及其制备方法
TWI596788B (zh) * 2015-11-10 2017-08-21 財團法人工業技術研究院 雙面光電轉換元件
RU2635982C1 (ru) * 2016-10-28 2017-11-17 Федеральное государственное бюджетное учреждение науки Институт физики металлов имени М.Н. Михеева Уральского отделения Российской академии наук (ИФМ УрО РАН) Способ изготовления ленты из железоникелевого сплава Fe-(49-50,5) мас. % Ni, имеющей острую кубическую текстуру
KR101921595B1 (ko) * 2016-12-13 2018-11-26 주식회사 포스코 리징성 및 표면품질이 우수한 페라이트계 스테인리스강 및 그 제조방법
CN107119234B (zh) * 2017-05-11 2019-01-18 东北大学 一种因瓦合金带材的细晶强化方法
US11479841B2 (en) * 2017-06-19 2022-10-25 Praxair S.T. Technology, Inc. Thin and texturized films having fully uniform coverage of a non-smooth surface derived from an additive overlaying process
CN109735778A (zh) * 2019-01-31 2019-05-10 河南城建学院 一种高强度立方织构金属基带的制备方法
US11482417B2 (en) * 2019-08-23 2022-10-25 Taiwan Semiconductor Manufacturing Company Ltd. Method of manufacturing semiconductor structure
CN110724922B (zh) * 2019-10-31 2022-08-16 汕头大学 一种柔性衬底上晶体取向和极性可控的外延azo薄膜及其制备方法
CN111180538A (zh) * 2019-12-31 2020-05-19 中威新能源(成都)有限公司 一种具有金字塔叠加结构的单晶硅片及制备方法
CN112434984A (zh) * 2020-12-21 2021-03-02 上海鼎经自动化科技股份有限公司 通过金属切削端面微观几何形状实现标识和识别的方法
CN114481101B (zh) * 2021-12-15 2023-09-29 中南大学 一种调控金属镀层晶面取向的方法获得的金属材料和应用
CN115547419B (zh) * 2022-10-03 2025-09-30 北京工业大学 基于分子动力学模拟测试硅基太阳电池表面粗糙度的方法
KR20250091502A (ko) * 2023-12-14 2025-06-23 주식회사 포스코 알칼리 수전해 분리판용 무코팅 오스테나이트 강판
WO2025181524A1 (fr) 2024-03-01 2025-09-04 Aperam Procédé de préparation d'un feuillard en alliage fe-ni austénitique, feuillard ainsi préparé et produits réalisés à partir de ce feuillard

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4419533A (en) * 1982-03-03 1983-12-06 Energy Conversion Devices, Inc. Photovoltaic device having incident radiation directing means for total internal reflection
JPS60119784A (ja) * 1983-12-01 1985-06-27 Kanegafuchi Chem Ind Co Ltd 絶縁金属基板の製法およびそれに用いる装置
EP0541033A3 (en) * 1991-11-08 1993-06-30 Siemens Aktiengesellschaft Process of fabrication of thin-film polycristalline silicon solar cells
JP3197036B2 (ja) 1991-11-14 2001-08-13 鐘淵化学工業株式会社 結晶質シリコン薄膜の形成方法
US5401331A (en) * 1993-09-07 1995-03-28 Midwest Research Institute Substrate for thin silicon solar cells
AUPM982294A0 (en) 1994-12-02 1995-01-05 Pacific Solar Pty Limited Method of manufacturing a multilayer solar cell
US5679180A (en) * 1995-06-22 1997-10-21 United Technologies Corporation γ strengthened single crystal turbine blade alloy for hydrogen fueled propulsion systems
JP2992638B2 (ja) * 1995-06-28 1999-12-20 キヤノン株式会社 光起電力素子の電極構造及び製造方法並びに太陽電池
FR2745298B1 (fr) 1996-02-27 1998-04-24 Imphy Sa Alliage fer-nickel et bande laminee a froid a texture cubique
MY123398A (en) * 1997-05-09 2006-05-31 Toyo Kohan Co Ltd Invar alloy steel sheet for shadow mask, method for producing same, shadow mask, and color picture tube
JPH10321883A (ja) * 1997-05-16 1998-12-04 Semiconductor Energy Lab Co Ltd 太陽電池およびその作製方法
US5964966A (en) * 1997-09-19 1999-10-12 Lockheed Martin Energy Research Corporation Method of forming biaxially textured alloy substrates and devices thereon
JPH11186576A (ja) * 1997-12-19 1999-07-09 Dainippon Printing Co Ltd 薄膜太陽電池とその製造方法
AUPP290398A0 (en) * 1998-04-09 1998-05-07 Pacific Solar Pty Limited Aluminium film interrupting process
JP2000294818A (ja) * 1999-04-05 2000-10-20 Sony Corp 薄膜半導体素子およびその製造方法
JP2000306219A (ja) * 1999-04-23 2000-11-02 Victor Co Of Japan Ltd 磁気抵抗効果膜及びその製造方法
JP2000357660A (ja) * 1999-06-15 2000-12-26 Sharp Corp 多結晶シリコン膜を備えた基板及びその形成方法、並びに該膜を用いた太陽電池
DE60031784T2 (de) * 1999-07-23 2007-09-06 American Superconductor Corp., Westborough Verbesserte hochtemperatursupraleiter-beschichtete elemente
AU6219200A (en) * 1999-08-24 2001-03-19 Electric Power Research Institute, Inc. Surface control alloy substrates and methods of manufacture therefor
US20030192585A1 (en) * 2002-01-25 2003-10-16 Konarka Technologies, Inc. Photovoltaic cells incorporating rigid substrates
TW501286B (en) * 2001-06-07 2002-09-01 Ind Tech Res Inst Polysilicon thin film solar cell substrate
US7087113B2 (en) * 2002-07-03 2006-08-08 Ut-Battelle, Llc Textured substrate tape and devices thereof
GB0227718D0 (en) * 2002-11-28 2003-01-08 Eastman Kodak Co A photovoltaic device and a manufacturing method hereof
FR2849061B1 (fr) * 2002-12-20 2005-06-03 Imphy Ugine Precision Alliage fer-nickel a tres faible coefficient de dilatation thermique pour la fabrication de masques d'ombres
US7261776B2 (en) * 2004-03-30 2007-08-28 American Superconductor Corporation Deposition of buffer layers on textured metal surfaces
EP2018669B1 (en) * 2006-04-18 2009-11-11 Dow Corning Corporation Copper indium diselenide-based photovoltaic device and method of preparing the same
US20090014049A1 (en) * 2007-07-13 2009-01-15 Miasole Photovoltaic module with integrated energy storage
PL2031082T3 (pl) * 2007-08-31 2015-03-31 Aperam Alloys Imphy Metalowe podłoże o teksturze krystalograficznej, układ o teksturze krystalograficznej, ogniowo fotowoltaiczne i moduł fotowoltaiczny zawierające taki układ i sposób powlekania cienkimi warstwami

Also Published As

Publication number Publication date
EP2031082B1 (fr) 2014-09-03
EP2031082A1 (fr) 2009-03-04
CA2698126A1 (fr) 2009-03-12
BRPI0815837A2 (pt) 2018-01-09
WO2009030865A2 (fr) 2009-03-12
JP2010538448A (ja) 2010-12-09
AU2008294609A1 (en) 2009-03-12
ES2522582T3 (es) 2014-11-17
PL2031082T3 (pl) 2015-03-31
IL205494A0 (en) 2011-07-31
KR101537305B1 (ko) 2015-07-22
CN103397247B (zh) 2015-09-02
EA016990B1 (ru) 2012-08-30
KR20100080506A (ko) 2010-07-08
JP5592259B2 (ja) 2014-09-17
CA2698126C (fr) 2016-08-09
BRPI0815837B1 (pt) 2019-09-03
CN103397247A (zh) 2013-11-20
CN101842508A (zh) 2010-09-22
US9309592B2 (en) 2016-04-12
CN101842508B (zh) 2013-05-01
PT2031082E (pt) 2014-11-04
IL205494A (en) 2013-08-29
WO2009030865A3 (fr) 2009-04-30
ZA201001452B (en) 2010-11-24
MY150031A (en) 2013-11-29
AU2008294609B2 (en) 2012-09-13
HK1191985A1 (en) 2014-08-08
US20100269887A1 (en) 2010-10-28

Similar Documents

Publication Publication Date Title
EA201000408A1 (ru) Кристаллографически текстурированная металлическая подложка, кристаллографически текстурированное устройство, фотогальванический элемент и фотогальванический модуль, содержащий такое устройство, и способ нанесения тонких слоев
TWI518189B (zh) 具優異絕緣性且熱膨脹係數小之不鏽鋼製太陽電池用基板及其製造方法
JP6140611B2 (ja) 鋼箔及びその製造方法
CN100567559C (zh) 微粒发生少的含Mn铜合金溅射靶
EP2695733B1 (en) Copper foil composite, copper foil used for the same, formed product and method of producing the same
WO2008126681A1 (ja) 電気・電子機器用銅合金およびその製造方法
MY167437A (en) Aluminium alloy sheet and method for manufacturing same
MX2019014245A (es) Miembro estampado en caliente.
US20220152983A1 (en) Plated steel
JP2014512452A5 (ru)
Kai et al. The oxidation behavior of a Ni2FeCoCrAl0. 5 high-entropy superalloy in O2-containing environments
CN107923012A (zh) 奥氏体系不锈钢箔
EP2612950A3 (de) Legierung, Schutzschicht und Bauteil
CN103741056A (zh) 一种耐南海海洋环境用耐蚀钢板及其生产工艺
CN106756227A (zh) 一种高弹性、耐海水腐蚀的铜合金
EP4553185A3 (en) Deposition mask including an alloy metal plate
WO2012091319A3 (en) Aluminum coated steel sheet having excellent oxidation resistance and heat resistance
CN108884520B (zh) 磁盘用铝合金坯体和磁盘用铝合金基片
EP3460081A3 (en) Titanium copper for electronic components
JP6176040B2 (ja) Ｃｒ添加高耐食性鋼板及びその製造方法
IN2014MN00820A (ru)
CN101265555B (zh) 无碳化物贝氏体耐腐蚀钢及其制造方法
JP6026208B2 (ja) 硫化水素およびセレン化水素に対する耐侵食性に優れたＣｏ基合金およびそのＣｏ基合金からなる装置構成部材
JP7120697B1 (ja) 海洋生物の付着防止可能な構造物
WO2020111860A3 (ko) 취성균열전파 저항성이 우수한 극후물 강재 및 그 제조방법

Legal Events

Date Code Title Description
MM4A Lapse of a eurasian patent due to non-payment of renewal fees within the time limit in the following designated state(s)

Designated state(s): AM AZ BY KZ KG MD TJ TM RU