DK538283D0 - CONTROL CIRCUIT FOR A SENSITIVE SEMICONDUCTOR ORGANIZATION OF THE TYRISTOR OR TRIAC TYPE WITH SELF CONNECTOR HELP IMPEDANCE - Google Patents
CONTROL CIRCUIT FOR A SENSITIVE SEMICONDUCTOR ORGANIZATION OF THE TYRISTOR OR TRIAC TYPE WITH SELF CONNECTOR HELP IMPEDANCEInfo
- Publication number
- DK538283D0 DK538283D0 DK5382/83A DK538283A DK538283D0 DK 538283 D0 DK538283 D0 DK 538283D0 DK 5382/83 A DK5382/83 A DK 5382/83A DK 538283 A DK538283 A DK 538283A DK 538283 D0 DK538283 D0 DK 538283D0
- Authority
- DK
- Denmark
- Prior art keywords
- tyristor
- organization
- control circuit
- sensitive semiconductor
- triac type
- Prior art date
Links
- 230000008520 organization Effects 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
- H03K17/725—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region for AC voltages or currents
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D18/00—Thyristors
- H10D18/221—Thyristors having amplifying gate structures, e.g. cascade configurations
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/78—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
- H03K17/79—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled controlling bipolar semiconductor switches with more than two PN-junctions, or more than three electrodes, or more than one electrode connected to the same conductivity region
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR8219729A FR2536920A1 (en) | 1982-11-25 | 1982-11-25 | Control circuit for a semiconductor device which can be automatically switched on and switched off, or power controlled, by establishing a short-circuit between two regions of the semiconductor. |
| FR8303306A FR2542148B1 (en) | 1983-03-01 | 1983-03-01 | CONTROL CIRCUIT OF A THYRISTOR OR TRIAC TYPE SENSITIVE SEMICONDUCTOR DEVICE WITH SELF-IGNITION ASSISTANCE IMPEDANCE AND ITS APPLICATION TO THE PRODUCTION OF A SWITCH ASSEMBLY COMBINING A SENSITIVE THYRISTOR WITH A LESS SENSITIVE THYRISTOR |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DK538283D0 true DK538283D0 (en) | 1983-11-24 |
| DK538283A DK538283A (en) | 1984-05-26 |
Family
ID=26223158
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DK538283A DK538283A (en) | 1982-11-25 | 1983-11-24 | CONTROL CIRCUIT FOR A SENSITIVE SEMICONDUCTOR ORGANIZATION OF THE TYRISTOR OR TRIAC TYPE WITH SELF CONNECTOR HELP IMPEDANCE |
Country Status (5)
| Country | Link |
|---|---|
| EP (1) | EP0110776A1 (en) |
| KR (1) | KR840006894A (en) |
| BR (1) | BR8306491A (en) |
| DK (1) | DK538283A (en) |
| ES (1) | ES8406816A1 (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2579007B1 (en) * | 1985-03-12 | 1988-09-09 | Telemecanique Electrique | HYBRID SWITCH |
| JPH02272612A (en) * | 1989-04-14 | 1990-11-07 | Toshiba Corp | Method for generating gate pulse in static type reactive power compensator |
| US5027020A (en) * | 1989-10-10 | 1991-06-25 | Teledyne Industries, Inc. | Zero voltage switching AC relay circuit |
| EP1811639A1 (en) * | 2006-01-23 | 2007-07-25 | Thomson Licensing S.A. | Overpower-protection circuit and power supply apparatus having the same |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3663838A (en) * | 1970-10-16 | 1972-05-16 | Eberhart Reimers | Optically triggered thyristor |
| JPS5574168A (en) * | 1978-11-28 | 1980-06-04 | Oki Electric Ind Co Ltd | Pnpn switch |
-
1983
- 1983-11-23 EP EP83402258A patent/EP0110776A1/en not_active Withdrawn
- 1983-11-24 DK DK538283A patent/DK538283A/en not_active Application Discontinuation
- 1983-11-24 KR KR1019830005560A patent/KR840006894A/en not_active Withdrawn
- 1983-11-25 ES ES527572A patent/ES8406816A1/en not_active Expired
- 1983-11-25 BR BR8306491A patent/BR8306491A/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| ES527572A0 (en) | 1984-08-01 |
| DK538283A (en) | 1984-05-26 |
| KR840006894A (en) | 1984-12-03 |
| BR8306491A (en) | 1984-06-26 |
| EP0110776A1 (en) | 1984-06-13 |
| ES8406816A1 (en) | 1984-08-01 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| AHB | Application shelved due to non-payment |