DK510488D0 - Pinfotodiode af ingaas/inp-typen - Google Patents
Pinfotodiode af ingaas/inp-typenInfo
- Publication number
- DK510488D0 DK510488D0 DK510488A DK510488A DK510488D0 DK 510488 D0 DK510488 D0 DK 510488D0 DK 510488 A DK510488 A DK 510488A DK 510488 A DK510488 A DK 510488A DK 510488 D0 DK510488 D0 DK 510488D0
- Authority
- DK
- Denmark
- Prior art keywords
- pin
- ingas
- input
- inp type
- inp
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
- H10F30/223—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PIN barrier
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62231423A JPS6473774A (en) | 1987-09-16 | 1987-09-16 | Pin photodiode of ingaas/inp |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DK510488D0 true DK510488D0 (da) | 1988-09-14 |
| DK510488A DK510488A (da) | 1989-03-17 |
Family
ID=16923349
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DK510488A DK510488A (da) | 1987-09-16 | 1988-09-14 | Pinfotodiode af ingaas/inp-typen |
Country Status (5)
| Country | Link |
|---|---|
| EP (1) | EP0308335B1 (da) |
| JP (1) | JPS6473774A (da) |
| CA (1) | CA1292055C (da) |
| DE (1) | DE3884729T2 (da) |
| DK (1) | DK510488A (da) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6452220B1 (en) | 1999-12-09 | 2002-09-17 | The Regents Of The University Of California | Current isolating epitaxial buffer layers for high voltage photodiode array |
| KR20020014517A (ko) * | 2000-08-18 | 2002-02-25 | 박종섭 | 씨모스 이미지센서의 저전압 핀드포토다이오드 제조방법 |
| EP2667412A1 (en) | 2007-04-18 | 2013-11-27 | Invisage Technologies, INC. | Materials, systems and methods for optoelectronic devices |
| US20100044676A1 (en) | 2008-04-18 | 2010-02-25 | Invisage Technologies, Inc. | Photodetectors and Photovoltaics Based on Semiconductor Nanocrystals |
| US8203195B2 (en) | 2008-04-18 | 2012-06-19 | Invisage Technologies, Inc. | Materials, fabrication equipment, and methods for stable, sensitive photodetectors and image sensors made therefrom |
| TWI684290B (zh) * | 2008-07-21 | 2020-02-01 | 美商量宏科技股份有限公司 | 用於安定、敏感性光檢測器的材料、製造設備與方法及由其等製成之影像感應器 |
| JP2023020026A (ja) * | 2021-07-30 | 2023-02-09 | 京セラ株式会社 | フォトダイオード及び光感応デバイス |
| JP7715381B2 (ja) * | 2021-07-29 | 2025-07-30 | 国立大学法人茨城大学 | フォトダイオード及び光感応デバイス |
| US20240347663A1 (en) * | 2021-07-29 | 2024-10-17 | Kyocera Corporation | Photodiode and photosensitive device |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5497390A (en) * | 1978-01-19 | 1979-08-01 | Toshiba Corp | Manufacture of semiconductor photo detector |
| JPS57147286A (en) * | 1981-03-06 | 1982-09-11 | Olympus Optical Co Ltd | Photodetector element and manufacture thereof |
| US4617192A (en) * | 1982-12-21 | 1986-10-14 | At&T Bell Laboratories | Process for making optical INP devices |
| JPS60130871A (ja) * | 1983-12-19 | 1985-07-12 | Mitsubishi Electric Corp | ＩｎＧａＡｓ光検出器 |
| JPS61172381A (ja) * | 1984-12-22 | 1986-08-04 | Fujitsu Ltd | ＩｎＰ系化合物半導体装置 |
-
1987
- 1987-09-16 JP JP62231423A patent/JPS6473774A/ja active Pending
-
1988
- 1988-09-14 DK DK510488A patent/DK510488A/da not_active Application Discontinuation
- 1988-09-14 CA CA000577345A patent/CA1292055C/en not_active Expired - Lifetime
- 1988-09-15 DE DE88402331T patent/DE3884729T2/de not_active Expired - Fee Related
- 1988-09-15 EP EP88402331A patent/EP0308335B1/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| CA1292055C (en) | 1991-11-12 |
| EP0308335A2 (en) | 1989-03-22 |
| DE3884729T2 (de) | 1994-05-05 |
| DK510488A (da) | 1989-03-17 |
| JPS6473774A (en) | 1989-03-20 |
| EP0308335B1 (en) | 1993-10-06 |
| EP0308335A3 (en) | 1989-12-06 |
| DE3884729D1 (de) | 1993-11-11 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| AHB | Application shelved due to non-payment |