DK164617C - Anordning med et i et integreret kredsloeb integrerbart hallelement og anvendelse af denne anordning i en effektmaaler eller elektricitetsmaaler - Google Patents

Anordning med et i et integreret kredsloeb integrerbart hallelement og anvendelse af denne anordning i en effektmaaler eller elektricitetsmaaler

Info

Publication number: DK164617C
Authority: DK; Denmark
Prior art keywords: hall element; power; application; integrated circuit; electrical power
Prior art date: 1985-05-22

Application number

DK036087A

Other languages

English (en)

Other versions

DK36087A (da

DK36087D0 (da

DK164617B (da

Inventor

Radivoje Popovic

Katalin Solt

Jean-Luc Berchier

Original Assignee

Landis & Gyr Ag

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1985-05-22

Filing date

1987-01-22

Publication date

1992-12-07

1987-01-22 Application filed by Landis & Gyr Ag filed Critical Landis & Gyr Ag

1987-01-22 Publication of DK36087A publication Critical patent/DK36087A/da

1987-01-22 Publication of DK36087D0 publication Critical patent/DK36087D0/da

1992-07-20 Publication of DK164617B publication Critical patent/DK164617B/da

1992-12-07 Application granted granted Critical

1992-12-07 Publication of DK164617C publication Critical patent/DK164617C/da

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N52/00—Hall-effect devices
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N52/00—Hall-effect devices
- H10N52/101—Semiconductor Hall-effect devices
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N52/00—Hall-effect devices
- H10N52/80—Constructional details
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N59/00—Integrated devices, or assemblies of multiple devices, comprising at least one galvanomagnetic or Hall-effect element covered by groups H10N50/00 - H10N52/00

Landscapes

Hall/Mr Elements (AREA)
Measuring Magnetic Variables (AREA)
Semiconductor Integrated Circuits (AREA)
Measuring Instrument Details And Bridges, And Automatic Balancing Devices (AREA)
Electronic Switches (AREA)
Control Of Eletrric Generators (AREA)
Control Of Motors That Do Not Use Commutators (AREA)
Reciprocating, Oscillating Or Vibrating Motors (AREA)

DK036087A 1985-05-22 1987-01-22 Anordning med et i et integreret kredsloeb integrerbart hallelement og anvendelse af denne anordning i en effektmaaler eller elektricitetsmaaler DK164617C (da)

Applications Claiming Priority (4)

Application Number	Priority Date	Filing Date	Title
CH217685		1985-05-22
CH2176/85A CH668147A5 (de)	1985-05-22	1985-05-22	Einrichtung mit einem hallelement in integrierter halbleitertechnologie.
CH8600056		1986-04-25
PCT/CH1986/000056 WO1986007196A1 (fr)	1985-05-22	1986-04-25	Dispositif comportant un element a effet de hall incorpore dans un circuit integre

Publications (4)

Publication Number	Publication Date
DK36087A DK36087A (da)	1987-01-22
DK36087D0 DK36087D0 (da)	1987-01-22
DK164617B DK164617B (da)	1992-07-20
DK164617C true DK164617C (da)	1992-12-07

Family

ID=4227667

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
DK036087A DK164617C (da)	1985-05-22	1987-01-22	Anordning med et i et integreret kredsloeb integrerbart hallelement og anvendelse af denne anordning i en effektmaaler eller elektricitetsmaaler

Country Status (19)

Country	Link
US (1)	US4673964A (da)
EP (1)	EP0202508B1 (da)
JP (1)	JPH0728058B2 (da)
KR (1)	KR940001299B1 (da)
CN (1)	CN86103480B (da)
AT (1)	ATE40023T1 (da)
CA (1)	CA1249667A (da)
CH (1)	CH668147A5 (da)
CS (1)	CS274590B2 (da)
DE (1)	DE3661788D1 (da)
DK (1)	DK164617C (da)
ES (1)	ES8707822A1 (da)
HU (1)	HU202679B (da)
IN (1)	IN166917B (da)
MX (1)	MX168024B (da)
NZ (1)	NZ216151A (da)
RO (1)	RO96966B (da)
WO (1)	WO1986007196A1 (da)
YU (1)	YU46405B (da)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
CH668146A5 (de) *	1985-05-22	1988-11-30	Landis & Gyr Ag	Einrichtung mit einem hallelement in integrierter halbleitertechnologie.
CH669068A5 (de) *	1986-04-29	1989-02-15	Landis & Gyr Ag	Integrierbares hallelement.
JP2754599B2 (ja) *	1988-10-05	1998-05-20	株式会社デンソー	半導体装置
US5119166A (en) *	1990-02-06	1992-06-02	Honeywell Inc.	Hall effect element aligned to reduce package-induced offsets
DE4118255A1 (de) *	1991-06-04	1992-12-10	Itt Ind Gmbh Deutsche	Monolithisch integrierter sensorschaltkreis in cmos-technik
JP3583458B2 (ja) *	1994-03-09	2004-11-04	株式会社東芝	ホール素子
DE19857275A1 (de) *	1998-12-11	2000-06-15	Johannes V Kluge	Integrierbarer Magnetfeldsensor aus Halbleitermaterial
DE10125425A1 (de) *	2001-05-25	2002-12-05	Bosch Gmbh Robert	Vorrichtung zur Messung einer B-Komponente eines Magnetfeldes, Magnetfeldsensor und Strommesser
DE10240239A1 (de) *	2002-08-31	2004-03-11	Robert Bosch Gmbh	Hochgenauer Hall-Sensor mit mehreren Kontaktpaaren
DE10240404A1 (de) *	2002-09-02	2004-03-18	Austriamicrosystems Ag	Hall-Sensor und Verfahren zu dessen Betrieb
JP2006210731A (ja) *	2005-01-28	2006-08-10	Denso Corp	ホール素子およびその製造方法
US8174014B2 (en) *	2006-02-16	2012-05-08	California Institute Of Technology	Apparatus and method of manufacture for depositing a composite anti-reflection layer on a silicon surface
US8089070B2 (en) *	2006-02-16	2012-01-03	California Institute Of Technology	Apparatus and method of manufacture for an imager equipped with a cross-talk barrier
US7626377B2 (en) *	2008-02-18	2009-12-01	Honeywell International Inc.	Hall-effect device with merged and/or non-merged complementary structure
CH699933A1 (de) *	2008-11-28	2010-05-31	Melexis Technologies Sa	Vertikaler Hallsensor.
US20100145660A1 (en) *	2008-12-08	2010-06-10	Robert Bosch Gmbh	Mems sensor with built-in self-test
US8114684B2 (en) *	2009-03-02	2012-02-14	Robert Bosch Gmbh	Vertical hall effect sensor with current focus
DE102009038938B4 (de) *	2009-08-26	2013-10-10	Austriamicrosystems Ag	Verfahren zur Herstellung eines vertikalen Hall-Sensors
DE112012004043B4 (de) *	2011-09-28	2018-03-22	Mitsubishi Electric Corporation	Halbleitereinrichtung
US9484525B2 (en) *	2012-05-15	2016-11-01	Infineon Technologies Ag	Hall effect device
JP6865579B2 (ja) *	2016-12-28	2021-04-28	エイブリック株式会社	半導体装置
JP7133968B2 (ja) *	2018-04-24	2022-09-09	エイブリック株式会社	半導体装置
WO2019219941A1 (en) *	2018-05-18	2019-11-21	Lfoundry S.R.L.	Vertical hall elements having reduced offset and method of manufacturing thereof
US10424616B1 (en) *	2018-06-20	2019-09-24	Globalfoundries Singapore Pte. Ltd.	Integrated circuit devices including vertical and lateral hall elements, and methods for fabricating the same
US12356869B2 (en) *	2019-07-08	2025-07-08	Lfoundry S.R.L.	Hall integrated sensor and corresponding manufacturing process
DE102023002342A1 (de) *	2023-06-09	2024-12-12	Tdk-Micronas Gmbh	Vertikaler III-V Hallsensor

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US3372070A (en) *	1965-07-30	1968-03-05	Bell Telephone Labor Inc	Fabrication of semiconductor integrated devices with a pn junction running through the wafer
US3668439A (en) *	1969-09-11	1972-06-06	Mitsubishi Electric Corp	Magnetically operated semiconductor device
US3852802A (en) *	1972-05-01	1974-12-03	Signetics Corp	Integrated circuit hall effect device and method
JPS5257792A (en) *	1975-11-07	1977-05-12	Agency Of Ind Science & Technol	Photoelectric converting element
US4141026A (en) *	1977-02-02	1979-02-20	Texas Instruments Incorporated	Hall effect generator
US4129880A (en) *	1977-07-01	1978-12-12	International Business Machines Incorporated	Channel depletion boundary modulation magnetic field sensor
US4253107A (en) *	1978-10-06	1981-02-24	Sprague Electric Company	Integrated circuit with ion implanted hall-cell

1985
- 1985-05-22 CH CH2176/85A patent/CH668147A5/de not_active IP Right Cessation
- 1985-12-18 US US06/810,929 patent/US4673964A/en not_active Expired - Fee Related
1986
- 1986-04-25 JP JP61502211A patent/JPH0728058B2/ja not_active Expired - Lifetime
- 1986-04-25 KR KR1019870700049A patent/KR940001299B1/ko not_active Expired - Lifetime
- 1986-04-25 HU HU862342A patent/HU202679B/hu not_active IP Right Cessation
- 1986-04-25 WO PCT/CH1986/000056 patent/WO1986007196A1/de not_active Ceased
- 1986-04-26 EP EP86105813A patent/EP0202508B1/de not_active Expired
- 1986-04-26 DE DE8686105813T patent/DE3661788D1/de not_active Expired
- 1986-04-26 AT AT86105813T patent/ATE40023T1/de not_active IP Right Cessation
- 1986-05-12 CS CS343486A patent/CS274590B2/cs unknown
- 1986-05-13 NZ NZ216151A patent/NZ216151A/xx unknown
- 1986-05-15 IN IN437/DEL/86A patent/IN166917B/en unknown
- 1986-05-20 MX MX002560A patent/MX168024B/es unknown
- 1986-05-20 CA CA000509531A patent/CA1249667A/en not_active Expired
- 1986-05-21 CN CN86103480A patent/CN86103480B/zh not_active Expired
- 1986-05-21 ES ES555166A patent/ES8707822A1/es not_active Expired
- 1986-05-22 YU YU86286A patent/YU46405B/sh unknown
- 1986-12-29 RO RO126284A patent/RO96966B/ro unknown
1987
- 1987-01-22 DK DK036087A patent/DK164617C/da not_active IP Right Cessation

Also Published As

Publication number	Publication date
HUT44363A (en)	1988-02-29
CN86103480B (zh)	1988-10-19
DK36087A (da)	1987-01-22
EP0202508A1 (de)	1986-11-26
AU589958B2 (en)	1989-10-26
MX168024B (es)	1993-04-28
ES555166A0 (es)	1987-08-16
KR940001299B1 (ko)	1994-02-18
EP0202508B1 (de)	1989-01-11
YU86286A (en)	1989-12-31
JPS62502928A (ja)	1987-11-19
KR880700477A (ko)	1988-03-15
AU5695186A (en)	1986-12-24
DK36087D0 (da)	1987-01-22
CS343486A2 (en)	1991-02-12
ES8707822A1 (es)	1987-08-16
CA1249667A (en)	1989-01-31
CH668147A5 (de)	1988-11-30
US4673964A (en)	1987-06-16
YU46405B (sh)	1993-10-20
NZ216151A (en)	1989-08-29
IN166917B (da)	1990-08-04
RO96966B (ro)	1989-06-01
CS274590B2 (en)	1991-08-13
WO1986007196A1 (fr)	1986-12-04
DK164617B (da)	1992-07-20
DE3661788D1 (en)	1989-02-16
RO96966A (ro)	1989-05-30
CN86103480A (zh)	1986-11-19
ATE40023T1 (de)	1989-01-15
JPH0728058B2 (ja)	1995-03-29
HU202679B (en)	1991-03-28

Publication	Publication Date	Title
DK164617C (da)	1992-12-07	Anordning med et i et integreret kredsloeb integrerbart hallelement og anvendelse af denne anordning i en effektmaaler eller elektricitetsmaaler
DE3884058D1 (de)	1993-10-21	Hochspannungshalbleiter mit integrierter Niederspannungsschaltung.
KR900012410A (ko)	1990-08-04	전력 변환용 반도체 소자의 스냅퍼 회로와 그 모듈장치
IT8522181A0 (it)	1985-09-18	Stadio di uscita cmos a grande escursione di tensione e con stabilizzazione della corrente diriposo.
ATE122827T1 (de)	1995-06-15	Ptc-schaltungsschutzanordnungen.
DE3581548D1 (de)	1991-03-07	Stromversorgungsleiter-struktur in einer integrierten halbleiterschaltung.
FI860222A0 (fi)	1986-01-17	Puolijohdekomponentti sisältäen korkeajännite-MOS kanavatransistoreita ja matalajännite-MOS kanavatransistoreita
DE3781469D1 (de)	1992-10-08	Integrierte halbleiter-schaltung mit einer verbesserten verbindungsstruktur.
DE3586735D1 (de)	1992-11-12	Abschaltbares leistungshalbleiterbauelement.
DE3582457D1 (de)	1991-05-16	Halbleitervorrichtung mit eingangs-/ausgangsschutzschaltung.
DE68928312D1 (de)	1997-10-16	Leistungshalbleitervorrichtung
DE3772994D1 (de)	1991-10-17	Endstufe in brueckenschaltung.
DE3650638D1 (de)	1997-08-14	Integrierte Halbleiterschaltung mit Isolationszone
ATE69525T1 (de)	1991-11-15	Elektronischer ueberstromausloeser.
DE3785488D1 (de)	1993-05-27	Abschaltbares leistungshalbleiterbauelement.
DK592486A (da)	1987-06-14	Hurtigt virkende felteffekttransistor-styrekreds
DE59007053D1 (de)	1994-10-13	Leistungs-Halbleiterbauelement mit Emitterkurzschlüssen.
ES460207A1 (es)	1978-08-16	Circuito referencia de tension insensible a la temperatura.
DE3688809D1 (de)	1993-09-09	Misfet-halbleiteranordnung mit verminderten leckstrom.
EP0213425A3 (en)	1988-09-21	Complementary integrated circuit with a substrate bias voltage generator and a schottky diode
BR8503318A (pt)	1986-04-01	Chave de potencia semicondutora com um tiristor
KR860007757A (ko)	1986-10-17	반도체 집적회로장치
DE3668105D1 (de)	1990-02-08	Steuervorrichtung fuer einen ausgangskreis einer integrierten schaltung.
DE3869382D1 (de)	1992-04-23	Abschaltbares leistungshalbleiterbauelement.
KR870001303U (ko)	1987-02-20	출력(power) 트랜지스터 보호회로

Legal Events

Date	Code	Title	Description
1994-01-24	AHB	Application shelved due to non-payment
1994-12-27	PBP	Patent lapsed