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DE69326944D1 - Stapelelektroden für ferroelektrische vorrichtungen - Google Patents

Stapelelektroden für ferroelektrische vorrichtungen

Info

Publication number
DE69326944D1
DE69326944D1 DE69326944T DE69326944T DE69326944D1 DE 69326944 D1 DE69326944 D1 DE 69326944D1 DE 69326944 T DE69326944 T DE 69326944T DE 69326944 T DE69326944 T DE 69326944T DE 69326944 D1 DE69326944 D1 DE 69326944D1
Authority
DE
Germany
Prior art keywords
ferroelectrical
devices
stack electrodes
stack
electrodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69326944T
Other languages
English (en)
Other versions
DE69326944T2 (de
Inventor
Seshu Desu
In Yoo
Chi Kwok
Dilip Vijay
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Virginia Tech Intellectual Properties Inc
Original Assignee
Sharp Corp
Virginia Tech Intellectual Properties Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp, Virginia Tech Intellectual Properties Inc filed Critical Sharp Corp
Application granted granted Critical
Publication of DE69326944D1 publication Critical patent/DE69326944D1/de
Publication of DE69326944T2 publication Critical patent/DE69326944T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H10B53/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H10D1/694—Electrodes comprising noble metals or noble metal oxides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H10D1/696—Electrodes comprising multiple layers, e.g. comprising a barrier layer and a metal layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Non-Insulated Conductors (AREA)
  • Inorganic Insulating Materials (AREA)
DE69326944T 1992-04-13 1993-04-09 Stapelelektroden für ferroelektrische vorrichtungen Expired - Lifetime DE69326944T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US86804592A 1992-04-13 1992-04-13
PCT/US1993/003355 WO1993021637A1 (en) 1992-04-13 1993-04-09 Multilayer electrodes for ferroelectric devices

Publications (2)

Publication Number Publication Date
DE69326944D1 true DE69326944D1 (de) 1999-12-09
DE69326944T2 DE69326944T2 (de) 2000-03-30

Family

ID=25350979

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69326944T Expired - Lifetime DE69326944T2 (de) 1992-04-13 1993-04-09 Stapelelektroden für ferroelektrische vorrichtungen

Country Status (5)

Country Link
US (1) US5491102A (de)
EP (1) EP0636271B1 (de)
JP (1) JP3095574B2 (de)
DE (1) DE69326944T2 (de)
WO (1) WO1993021637A1 (de)

Families Citing this family (49)

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EP0617440B1 (de) * 1993-03-25 1997-03-05 Matsushita Electric Industrial Co., Ltd. Dünnschichtkondensator und Verfahren zu seiner Herstellung
US6052271A (en) * 1994-01-13 2000-04-18 Rohm Co., Ltd. Ferroelectric capacitor including an iridium oxide layer in the lower electrode
JP4554631B2 (ja) * 1994-01-13 2010-09-29 ローム株式会社 誘電体キャパシタおよびその製造方法
US5426075A (en) * 1994-06-15 1995-06-20 Ramtron International Corporation Method of manufacturing ferroelectric bismuth layered oxides
DE4421007A1 (de) * 1994-06-18 1995-12-21 Philips Patentverwaltung Elektronisches Bauteil und Verfahren zu seiner Herstellung
JP2703206B2 (ja) * 1994-09-30 1998-01-26 三星電子株式会社 強誘電体キャパシタ及びその製造方法
JP2735094B2 (ja) * 1994-12-01 1998-04-02 日本電気株式会社 薄膜キャパシタ及びその製造方法
JP3935976B2 (ja) * 1995-02-08 2007-06-27 ヒューレット・パッカード・カンパニー 半導体層構造および大容量メモリ装置の記録媒体
US5629229A (en) * 1995-07-12 1997-05-13 Sharp Kabushiki Kaisha Metalorganic chemical vapor deposition of (Ba1-x Srx)RuO3 /(Ba1-x Srx)TIO3 /(Ba1-x Srx)TiO3 /(Ba1- Srx)RuO3 capacitors for high dielectric materials
US5593914A (en) * 1996-03-19 1997-01-14 Radiant Technologies, Inc. Method for constructing ferroelectric capacitor-like structures on silicon dioxide surfaces
US5838605A (en) * 1996-03-20 1998-11-17 Ramtron International Corporation Iridium oxide local interconnect
US5749932A (en) * 1996-03-29 1998-05-12 Battelle Memorial Institute Refractory electrodes for joule heating and methods of using same
EP0895512B1 (de) * 1996-04-26 1999-10-20 Forschungszentrum Jülich Gmbh Pin-schichtenfolge auf einem perowskiten
KR100200704B1 (ko) * 1996-06-07 1999-06-15 윤종용 강유전체 메모리 장치 및 그 제조 방법
DE19640218C2 (de) * 1996-09-30 2000-11-02 Siemens Ag Integrierte Halbleiterspeicheranordnung mit Speicherkondensatoren
US6011284A (en) * 1996-12-26 2000-01-04 Sony Corporation Electronic material, its manufacturing method, dielectric capacitor, nonvolatile memory and semiconductor device
KR100397603B1 (ko) * 1997-01-21 2004-02-11 삼성전자주식회사 박막트랜지스터강유전체랜덤액세서메모리및그제조방법
JP3666163B2 (ja) * 1997-02-04 2005-06-29 セイコーエプソン株式会社 圧電体素子及びこれを用いたアクチュエータ並びにインクジェット式記録ヘッド
FR2761530B1 (fr) 1997-04-01 1999-06-11 Univ Geneve Composant electrique ou electronique, notamment circuit electrique ou electronique ou memoire non volatile
US6177361B1 (en) * 1997-05-23 2001-01-23 Micron Technology, Inc. In-situ formation of metal oxide and ferroelectric oxide films
KR20010013595A (ko) 1997-06-09 2001-02-26 엔, 마이클 그로브 개선된 장벽 특성을 나타내는 결정 퍼로브스카이트강유전체 셀을 어닐링하는 방법
US6162698A (en) * 1997-06-28 2000-12-19 Hyundai Electronics Industries Co., Ltd. Method of manufacturing a capacitor in a semiconductor device
JPH1154706A (ja) * 1997-08-06 1999-02-26 Nec Corp Ｍｉｍキャパシタ及びその製造方法
KR100269309B1 (ko) 1997-09-29 2000-10-16 윤종용 고집적강유전체메모리장치및그제조방법
KR20010031913A (ko) * 1997-11-10 2001-04-16 가나이 쓰토무 유전체 소자와 그 제조 방법
KR100458084B1 (ko) * 1997-12-27 2005-06-07 주식회사 하이닉스반도체 누설전류가 감소된 하부전극을 갖는 강유전체 커패시터 형성 방법
JP3520403B2 (ja) * 1998-01-23 2004-04-19 セイコーエプソン株式会社 圧電体薄膜素子、アクチュエータ、インクジェット式記録ヘッド、及びインクジェット式記録装置
KR100327483B1 (ko) * 1998-03-09 2002-04-17 윤종용 강유전체의비대칭히스테리시스특성을이용한고밀도데이터저장장치및그데이터기록재생방법
JP3482883B2 (ja) * 1998-08-24 2004-01-06 株式会社村田製作所 強誘電体薄膜素子およびその製造方法
JP4772188B2 (ja) * 1998-11-30 2011-09-14 アイメック 強誘電コンデンサの作成方法および基板上にｐｚｔ層を成長させる方法
DE19857039A1 (de) * 1998-12-10 2000-06-21 Siemens Ag Mikroelektronische Struktur
KR100313253B1 (ko) 1999-03-10 2001-11-05 노태원 반도체 메모리 셀용 적층형 페로브스카이트 강유전체 캐패시터
US6623865B1 (en) 2000-03-04 2003-09-23 Energenius, Inc. Lead zirconate titanate dielectric thin film composites on metallic foils
JP2003133531A (ja) * 2001-10-26 2003-05-09 Fujitsu Ltd 電子装置とその製造方法
JP4331442B2 (ja) 2002-06-14 2009-09-16 富士通マイクロエレクトロニクス株式会社 強誘電体キャパシタ及びその製造方法並びに強誘電体メモリ
JP4578774B2 (ja) 2003-01-08 2010-11-10 富士通株式会社 強誘電体キャパシタの製造方法
DE10303316A1 (de) * 2003-01-28 2004-08-12 Forschungszentrum Jülich GmbH Schneller remanenter Speicher
JPWO2004075296A1 (ja) * 2003-02-19 2006-06-01 富士通株式会社 強誘電体キャパシタの製造方法
US20040175585A1 (en) * 2003-03-05 2004-09-09 Qin Zou Barium strontium titanate containing multilayer structures on metal foils
KR100865798B1 (ko) * 2004-02-27 2008-10-28 캐논 가부시끼가이샤 압전 박막, 압전 박막의 제조방법, 압전 소자, 및 잉크제트 기록 헤드
NO20041733L (no) * 2004-04-28 2005-10-31 Thin Film Electronics Asa Organisk elektronisk krets med funksjonelt mellomsjikt og fremgangsmate til dens fremstilling.
US7298018B2 (en) * 2004-12-02 2007-11-20 Agency For Science, Technology And Research PLT/PZT ferroelectric structure
JP2006303529A (ja) * 2006-06-19 2006-11-02 Fujitsu Ltd ペロブスカイト構造の酸化物層を有する酸化物素子の製造方法及び誘電体ベーストランジスタの製造方法
JP2007184623A (ja) * 2007-01-22 2007-07-19 Rohm Co Ltd 誘電体キャパシタ
FR2923320B1 (fr) * 2007-11-06 2011-04-22 Commissariat Energie Atomique Support d'enregistrement ferroelectrique, son procede de fabrication et systeme d'enregistrement par micro-pointes l'incorporant
JP5329863B2 (ja) 2008-07-31 2013-10-30 富士フイルム株式会社 圧電素子及び圧電素子の製造方法、液体吐出装置
CN102142444B (zh) * 2010-12-15 2012-09-05 清华大学 一种不挥发信息存储单元
JP2016032007A (ja) * 2014-07-28 2016-03-07 株式会社リコー 圧電膜の製造方法、圧電素子の製造方法、液体吐出ヘッド及び画像形成装置
CN108585830A (zh) * 2018-06-08 2018-09-28 佛山科学技术学院 一种高介电可调的反铁电陶瓷及其制备方法和应用

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US4982309A (en) * 1989-07-17 1991-01-01 National Semiconductor Corporation Electrodes for electrical ceramic oxide devices
EP0415751B1 (de) * 1989-08-30 1995-03-15 Nec Corporation Dünnfilmkondensator und dessen Herstellungsverfahren
DE69014027T2 (de) * 1989-08-30 1995-06-01 Nippon Electric Co Dünnfilmkondensatoren und deren Herstellungsverfahren.
US5142437A (en) * 1991-06-13 1992-08-25 Ramtron Corporation Conducting electrode layers for ferroelectric capacitors in integrated circuits and method
US5164808A (en) * 1991-08-09 1992-11-17 Radiant Technologies Platinum electrode structure for use in conjunction with ferroelectric materials
US5155658A (en) * 1992-03-05 1992-10-13 Bell Communications Research, Inc. Crystallographically aligned ferroelectric films usable in memories and method of crystallographically aligning perovskite films
US5270298A (en) * 1992-03-05 1993-12-14 Bell Communications Research, Inc. Cubic metal oxide thin film epitaxially grown on silicon

Also Published As

Publication number Publication date
EP0636271A4 (de) 1995-03-15
DE69326944T2 (de) 2000-03-30
EP0636271B1 (de) 1999-11-03
EP0636271A1 (de) 1995-02-01
JPH0668529A (ja) 1994-03-11
WO1993021637A1 (en) 1993-10-28
JP3095574B2 (ja) 2000-10-03
US5491102A (en) 1996-02-13

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Legal Events

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