DE69302244D1 - Halbleiter-Schutzkomponente - Google Patents

Halbleiter-Schutzkomponente

Info

Publication number: DE69302244D1
Authority: DE; Germany
Prior art keywords: protection component; semiconductor protection; semiconductor; component; protection
Prior art date: 1992-08-11
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Fee Related

Application number

DE69302244T

Other languages

English (en)

Other versions

DE69302244T2 (de

Inventor

Keith Michael Hutchings

Andrew Leonard Goodyear

Paul Arthur Gough

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Koninklijke Philips NV

Original Assignee

Philips Electronics NV

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1992-08-11

Filing date

1993-08-09

Publication date

1996-05-23

1993-08-09 Application filed by Philips Electronics NV filed Critical Philips Electronics NV

1996-05-23 Application granted granted Critical

1996-05-23 Publication of DE69302244D1 publication Critical patent/DE69302244D1/de

1996-11-07 Publication of DE69302244T2 publication Critical patent/DE69302244T2/de

2013-08-10 Anticipated expiration legal-status Critical

Status Expired - Fee Related legal-status Critical Current

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
- H10D84/141—VDMOS having built-in components
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
- H10D30/66—Vertical DMOS [VDMOS] FETs
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
- H10D30/66—Vertical DMOS [VDMOS] FETs
- H10D30/665—Vertical DMOS [VDMOS] FETs having edge termination structures
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
- H10D30/66—Vertical DMOS [VDMOS] FETs
- H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
- H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
- H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs

DE69302244T 1992-08-11 1993-08-09 Halbleiter-Schutzkomponente Expired - Fee Related DE69302244T2 (de)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
GB929216953A GB9216953D0 (en)	1992-08-11	1992-08-11	A semiconductor component

Publications (2)

Publication Number	Publication Date
DE69302244D1 true DE69302244D1 (de)	1996-05-23
DE69302244T2 DE69302244T2 (de)	1996-11-07

Family

ID=10720114

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
DE69302244T Expired - Fee Related DE69302244T2 (de)	1992-08-11	1993-08-09	Halbleiter-Schutzkomponente

Country Status (5)

Country	Link
US (1)	US5352915A (de)
EP (1)	EP0583037B1 (de)
JP (1)	JPH06163889A (de)
DE (1)	DE69302244T2 (de)
GB (1)	GB9216953D0 (de)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
FR2705173B1 (fr) *	1993-05-10	1995-07-28	Sgs Thomson Microelectronics	Composant limiteur de courant serie.
GB9313651D0 (en) *	1993-07-01	1993-08-18	Philips Electronics Uk Ltd	A semiconductor device
US6001678A (en) *	1995-03-14	1999-12-14	Mitsubishi Denki Kabushiki Kaisha	Insulated gate semiconductor device
JP3303601B2 (ja) *	1995-05-19	2002-07-22	日産自動車株式会社	溝型半導体装置
US5648670A (en) *	1995-06-07	1997-07-15	Sgs-Thomson Microelectronics, Inc.	Trench MOS-gated device with a minimum number of masks
JP3168147B2 (ja) *	1995-09-14	2001-05-21	株式会社日立製作所	半導体装置とそれを用いた３相インバータ
US5883402A (en) *	1995-11-06	1999-03-16	Kabushiki Kaisha Toshiba	Semiconductor device and protection method
US5818084A (en) *	1996-05-15	1998-10-06	Siliconix Incorporated	Pseudo-Schottky diode
JP3397057B2 (ja) *	1996-11-01	2003-04-14	日産自動車株式会社	半導体装置
US5910873A (en) *	1997-02-19	1999-06-08	National Semiconductor Corporation	Field oxide transistor based feedback circuit for electrical overstress protection
US5846862A (en)	1997-05-20	1998-12-08	Advanced Micro Devices	Semiconductor device having a vertical active region and method of manufacture thereof
JP3502531B2 (ja) *	1997-08-28	2004-03-02	株式会社ルネサステクノロジ	半導体装置の製造方法
US6583001B1 (en) *	2001-05-18	2003-06-24	Sun Microsystems, Inc.	Method for introducing an equivalent RC circuit in a MOS device using resistive paths
US6586817B1 (en) *	2001-05-18	2003-07-01	Sun Microsystems, Inc.	Device including a resistive path to introduce an equivalent RC circuit
US20050274985A1 (en) *	2004-05-26	2005-12-15	Adlerstein Michael G	RF decoupled field plate for FETs
US7667264B2 (en) *	2004-09-27	2010-02-23	Alpha And Omega Semiconductor Limited	Shallow source MOSFET
US7977768B2 (en)	2008-04-01	2011-07-12	Infineon Technologies Ag	Semiconductor devices and methods of manufacture thereof
JP5282823B2 (ja) *	2009-09-14	2013-09-04	トヨタ自動車株式会社	ダイオード領域とｉｇｂｔ領域を有する半導体基板を備える半導体装置
US8129778B2 (en) *	2009-12-02	2012-03-06	Fairchild Semiconductor Corporation	Semiconductor devices and methods for making the same
US11875958B2 (en)	2018-10-18	2024-01-16	Uchiya Thermostat Co., Ltd.	Method of connecting electric element

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
GB2131603B (en) *	1982-12-03	1985-12-18	Philips Electronic Associated	Semiconductor devices
GB2134705B (en) *	1983-01-28	1985-12-24	Philips Electronic Associated	Semiconductor devices
GB2167229B (en) *	1984-11-21	1988-07-20	Philips Electronic Associated	Semiconductor devices
US4767722A (en) *	1986-03-24	1988-08-30	Siliconix Incorporated	Method for making planar vertical channel DMOS structures
US5072266A (en) *	1988-12-27	1991-12-10	Siliconix Incorporated	Trench DMOS power transistor with field-shaping body profile and three-dimensional geometry

1992
- 1992-08-11 GB GB929216953A patent/GB9216953D0/en active Pending
1993
- 1993-08-09 DE DE69302244T patent/DE69302244T2/de not_active Expired - Fee Related
- 1993-08-09 JP JP5197198A patent/JPH06163889A/ja active Pending
- 1993-08-09 US US08/103,943 patent/US5352915A/en not_active Expired - Fee Related
- 1993-08-09 EP EP93202343A patent/EP0583037B1/de not_active Expired - Lifetime

Also Published As

Publication number	Publication date
US5352915A (en)	1994-10-04
EP0583037B1 (de)	1996-04-17
DE69302244T2 (de)	1996-11-07
JPH06163889A (ja)	1994-06-10
GB9216953D0 (en)	1992-09-23
EP0583037A1 (de)	1994-02-16

Publication	Publication Date	Title
FI925326L (fi)	1994-03-03	Skydd
DE69328743D1 (de)	2000-06-29	Halbleiteranordnung
DE69334253D1 (de)	2009-02-12	Halbleitervorrichtung
DE69325951D1 (de)	1999-09-16	Halbleitervorrichtung
DE69318658D1 (de)	1998-06-25	Leistungs-Halbeiterbauelement
DE69132627D1 (de)	2001-07-12	Halbleiter-bauteil
DE69311912D1 (de)	1997-08-07	Geschützte zusätze
DE69320425D1 (de)	1998-09-24	Wechselrichterschutzeinrichtung
DE4394393T1 (de)	1994-11-10	Kühlkörper
FI103862B1 (fi)	1999-10-15	Suojain
DE69326262D1 (de)	1999-10-14	Verbindungshalbleiterbauelemente
DE69302244D1 (de)	1996-05-23	Halbleiter-Schutzkomponente
DE69400694D1 (de)	1996-11-14	Halbleitervorrichtung
FI945204A0 (fi)	1994-11-04	Puolijohdekomponentti
DE69322140D1 (de)	1998-12-24	Halbleiterpackung
DE59306610D1 (de)	1997-07-03	Integriertes akusto-optisches bauelement
DE4496282T1 (de)	1995-09-21	Halbleiter-Einrichtung
NO950604L (no)	1995-03-16	Beskyttelsesanordninger for brönnutstyr
DE69305421D1 (de)	1996-11-21	Halbleiterschaltung
DE69308910D1 (de)	1997-04-24	Selbsttätig geschütztes Halbleiterschutzelement
DE69325181D1 (de)	1999-07-08	Halbleitervorrichtung
NO954863D0 (no)	1995-11-30	Halvlederanordning
DE69306311D1 (de)	1997-01-16	Eckenschutzeinrichtung
DE59303277D1 (de)	1996-08-22	Hohlleiterabsorber
DE69428027D1 (de)	2001-09-27	Halbleitervorrichtungsschutzschaltung

Legal Events

Date	Code	Title	Description
1997-05-22	8364	No opposition during term of opposition
1999-12-16	8327	Change in the person/name/address of the patent owner	Owner name: KONINKLIJKE PHILIPS ELECTRONICS N.V., EINDHOVEN, N
2004-06-09	8339	Ceased/non-payment of the annual fee