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DE69300616D1 - Silikon enthaltendes positives Photoresistmaterial und dessen Verwendung in Dünnfilm-Verpackung-Technologie. - Google Patents

Silikon enthaltendes positives Photoresistmaterial und dessen Verwendung in Dünnfilm-Verpackung-Technologie.

Info

Publication number
DE69300616D1
DE69300616D1 DE69300616T DE69300616T DE69300616D1 DE 69300616 D1 DE69300616 D1 DE 69300616D1 DE 69300616 T DE69300616 T DE 69300616T DE 69300616 T DE69300616 T DE 69300616T DE 69300616 D1 DE69300616 D1 DE 69300616D1
Authority
DE
Germany
Prior art keywords
thin film
material containing
photoresist material
positive photoresist
containing silicone
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69300616T
Other languages
English (en)
Other versions
DE69300616T2 (de
Inventor
Krishna G Sachdev
Harbans S Sachdev
Joel R Whitaker
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of DE69300616D1 publication Critical patent/DE69300616D1/de
Publication of DE69300616T2 publication Critical patent/DE69300616T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/38—Polysiloxanes modified by chemical after-treatment
    • C08G77/382—Polysiloxanes modified by chemical after-treatment containing atoms other than carbon, hydrogen, oxygen or silicon
    • C08G77/392—Polysiloxanes modified by chemical after-treatment containing atoms other than carbon, hydrogen, oxygen or silicon containing sulfur
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/38—Polysiloxanes modified by chemical after-treatment
    • C08G77/382—Polysiloxanes modified by chemical after-treatment containing atoms other than carbon, hydrogen, oxygen or silicon
    • C08G77/388—Polysiloxanes modified by chemical after-treatment containing atoms other than carbon, hydrogen, oxygen or silicon containing nitrogen
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Medicinal Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Physics & Mathematics (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Materials For Photolithography (AREA)
DE69300616T 1992-04-30 1993-03-23 Silikon enthaltendes positives Photoresistmaterial und dessen Verwendung in Dünnfilm-Verpackung-Technologie. Expired - Fee Related DE69300616T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US87627792A 1992-04-30 1992-04-30

Publications (2)

Publication Number Publication Date
DE69300616D1 true DE69300616D1 (de) 1995-11-16
DE69300616T2 DE69300616T2 (de) 1996-05-30

Family

ID=25367336

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69300616T Expired - Fee Related DE69300616T2 (de) 1992-04-30 1993-03-23 Silikon enthaltendes positives Photoresistmaterial und dessen Verwendung in Dünnfilm-Verpackung-Technologie.

Country Status (4)

Country Link
US (1) US5422223A (de)
EP (1) EP0568476B1 (de)
JP (1) JP2744875B2 (de)
DE (1) DE69300616T2 (de)

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KR950002874B1 (ko) * 1990-06-25 1995-03-27 마쯔시다덴시고오교오 가부시기가이샤 광 또는 방사선감응성 조성물과 패턴형성방법과 포토마스크의 제조방법 및 반도체
JP2547944B2 (ja) * 1992-09-30 1996-10-30 インターナショナル・ビジネス・マシーンズ・コーポレイション 二層レジスト組成物を使用する光学リソグラフによりサブ−ハーフミクロンパターンを形成する方法
US5397741A (en) * 1993-03-29 1995-03-14 International Business Machines Corporation Process for metallized vias in polyimide
US5538832A (en) * 1993-12-16 1996-07-23 Mitsubishi Gas Chemical Company, Inc. Developing solution for producing printed circuit boards and a process for producing printed circuit boards wherein the developing solution comprises a quaternary ammonium hydroxide and a quaternary ammonium carbonate
ES2146128B1 (es) * 1995-03-31 2001-03-16 Consejo Superior Investigacion Procedimiento de fotoenmascaramiento de poliimidas fotosensibles con compuestos organometalicos para procesos fotolitograficos en tecnologia de silicio.
JPH09139368A (ja) * 1995-11-14 1997-05-27 Sony Corp 化学的機械研磨方法
US5851927A (en) * 1997-08-29 1998-12-22 Motorola, Inc. Method of forming a semiconductor device by DUV resist patterning
JP2003524669A (ja) 1998-08-18 2003-08-19 スリーエム イノベイティブ プロパティズ カンパニー ケイ素含有アセタールまたはケタール官能基を有するポリマー
US6087064A (en) 1998-09-03 2000-07-11 International Business Machines Corporation Silsesquioxane polymers, method of synthesis, photoresist composition, and multilayer lithographic method
US6251788B1 (en) * 1999-05-03 2001-06-26 Winbond Electronics Corp. Method of integrated circuit polishing without dishing effects
US6890448B2 (en) * 1999-06-11 2005-05-10 Shipley Company, L.L.C. Antireflective hard mask compositions
JP4017795B2 (ja) * 1999-08-27 2007-12-05 富士フイルム株式会社 光波長変換素子およびその作製方法
US6420084B1 (en) 2000-06-23 2002-07-16 International Business Machines Corporation Mask-making using resist having SIO bond-containing polymer
US6743885B2 (en) * 2001-07-31 2004-06-01 Sumitomo Chemical Company, Limited Resin composition for intermediate layer of three-layer resist
JP4373082B2 (ja) 2001-12-28 2009-11-25 富士通株式会社 アルカリ可溶性シロキサン重合体、ポジ型レジスト組成物、レジストパターン及びその製造方法、並びに、電子回路装置及びその製造方法
US7041748B2 (en) * 2003-01-08 2006-05-09 International Business Machines Corporation Patternable low dielectric constant materials and their use in ULSI interconnection
JP4432470B2 (ja) * 2003-11-25 2010-03-17 株式会社デンソー 半導体装置
WO2006065321A1 (en) 2004-12-17 2006-06-22 Dow Corning Corporation Method for forming anti-reflective coating
DE602005024447D1 (de) * 2004-12-17 2010-12-09 Dow Corning Siloxanharzbeschichtung
US20060231930A1 (en) * 2005-04-19 2006-10-19 Hitachi Global Storage Technologies Netherlands B.V. Heat resistant photomask for high temperature fabrication processes
EP1762895B1 (de) * 2005-08-29 2016-02-24 Rohm and Haas Electronic Materials, L.L.C. Antireflex-Zusammensetzungen für Hartmasken
EP1989593A2 (de) 2006-02-13 2008-11-12 Dow Corning Corporation Antireflektierendes beschichtungsmaterial
JP2007293160A (ja) * 2006-04-27 2007-11-08 Asahi Kasei Corp 感光性かご状シルセスキオキサン化合物
US7955649B2 (en) * 2007-01-17 2011-06-07 Visichem Technology, Ltd. Forming thin films using a resealable vial carrier of amphiphilic molecules
US7803521B2 (en) * 2007-11-19 2010-09-28 International Business Machines Corporation Photoresist compositions and process for multiple exposures with multiple layer photoresist systems
US7846644B2 (en) 2007-11-20 2010-12-07 Eastman Kodak Company Photopatternable deposition inhibitor containing siloxane
US8318258B2 (en) 2008-01-08 2012-11-27 Dow Corning Toray Co., Ltd. Silsesquioxane resins
CN101910253B (zh) * 2008-01-15 2013-04-10 陶氏康宁公司 倍半硅氧烷树脂
EP2250213B1 (de) * 2008-03-04 2013-08-21 Dow Corning Corporation Silsesquioxanharze
CN101970540B (zh) * 2008-03-05 2014-07-23 陶氏康宁公司 倍半硅氧烷树脂
EP2373722A4 (de) 2008-12-10 2013-01-23 Dow Corning Silsesquioxanharze
WO2010068337A1 (en) * 2008-12-10 2010-06-17 Dow Corning Corporation Wet-etchable antireflective coatings
DE102013003329B4 (de) 2013-02-25 2025-08-14 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Photolack, Verfahren zur Herstellung eines Kieselsäure(hetero)poly(co)kondensaten mit Positiv-Resist Verhalten sowie Kieselsäure(hetero)poly(co)kondensat
KR102375191B1 (ko) * 2015-01-05 2022-03-17 삼성디스플레이 주식회사 포지티브형 감광성 실록산 수지 조성물 및 이를 포함하는 표시 장치
KR20190081079A (ko) * 2017-12-29 2019-07-09 롬엔드하스전자재료코리아유한회사 포지티브형 감광성 수지 조성물 및 이를 이용한 경화막

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JPS5848045A (ja) * 1981-09-18 1983-03-19 Shin Etsu Chem Co Ltd 感光性組成物
US4603195A (en) * 1983-12-30 1986-07-29 International Business Machines Corporation Organosilicon compound and use thereof in photolithography
US4745169A (en) * 1985-05-10 1988-05-17 Hitachi, Ltd. Alkali-soluble siloxane polymer, silmethylene polymer, and polyorganosilsesquioxane polymer
US4789648A (en) * 1985-10-28 1988-12-06 International Business Machines Corporation Method for producing coplanar multi-level metal/insulator films on a substrate and for forming patterned conductive lines simultaneously with stud vias
JP2619358B2 (ja) * 1986-01-08 1997-06-11 株式会社日立製作所 感光性樹脂組成物
JPS62212645A (ja) * 1986-03-14 1987-09-18 Nippon Telegr & Teleph Corp <Ntt> レジスト材料
JPS63143538A (ja) * 1986-12-08 1988-06-15 Toshiba Corp 感光性組成物
JPH0769610B2 (ja) * 1987-03-19 1995-07-31 株式会社日立製作所 パターン形成方法
JPS63261255A (ja) * 1987-04-20 1988-10-27 Hitachi Ltd 感光性樹脂組成物
US4770897A (en) * 1987-05-05 1988-09-13 Digital Equipment Corporation Multilayer interconnection system for multichip high performance semiconductor packaging
JP2700655B2 (ja) * 1988-03-02 1998-01-21 富士写真フイルム株式会社 フォトレジスト組成物
JPH0232354A (ja) * 1988-07-22 1990-02-02 Nippon Telegr & Teleph Corp <Ntt> 感光性樹脂組成物
EP0365881A3 (de) * 1988-10-28 1990-07-11 International Business Machines Corporation Aufzeichnungszusammensetzung und ihre Verwendung
US4992596A (en) * 1988-12-27 1991-02-12 Olin Hunt Specialty Products Inc. Selected trinuclear novolak oligomers and their use in photoactive compounds and radiation sensitive mixtures
JPH0356964A (ja) * 1989-07-26 1991-03-12 Sony Corp レジスト材料
US5115090A (en) * 1990-03-30 1992-05-19 Sachdev Krishna G Viscosity stable, essentially gel-free polyamic acid compositions

Also Published As

Publication number Publication date
EP0568476A3 (de) 1994-05-04
JP2744875B2 (ja) 1998-04-28
EP0568476B1 (de) 1995-10-11
DE69300616T2 (de) 1996-05-30
EP0568476A2 (de) 1993-11-03
JPH0627671A (ja) 1994-02-04
US5422223A (en) 1995-06-06

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee