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DE69220434D1 - Halbleiterlaser - Google Patents

Halbleiterlaser

Info

Publication number
DE69220434D1
DE69220434D1 DE69220434T DE69220434T DE69220434D1 DE 69220434 D1 DE69220434 D1 DE 69220434D1 DE 69220434 T DE69220434 T DE 69220434T DE 69220434 T DE69220434 T DE 69220434T DE 69220434 D1 DE69220434 D1 DE 69220434D1
Authority
DE
Germany
Prior art keywords
semiconductor laser
laser
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69220434T
Other languages
English (en)
Other versions
DE69220434T2 (de
Inventor
Thomas L Paoli
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Xerox Corp
Original Assignee
Xerox Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Xerox Corp filed Critical Xerox Corp
Application granted granted Critical
Publication of DE69220434D1 publication Critical patent/DE69220434D1/de
Publication of DE69220434T2 publication Critical patent/DE69220434T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04254—Electrodes, e.g. characterised by the structure characterised by the shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
    • H01S5/2063—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion obtained by particle bombardment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/18—Semiconductor lasers with special structural design for influencing the near- or far-field
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0267—Integrated focusing lens
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06233—Controlling other output parameters than intensity or frequency
    • H01S5/06243—Controlling other output parameters than intensity or frequency controlling the position or direction of the emitted beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1003—Waveguide having a modified shape along the axis, e.g. branched, curved, tapered, voids
    • H01S5/1014—Tapered waveguide, e.g. spotsize converter
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1053—Comprising an active region having a varying composition or cross-section in a specific direction
    • H01S5/1064—Comprising an active region having a varying composition or cross-section in a specific direction varying width along the optical axis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1082—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region with a special facet structure, e.g. structured, non planar, oblique
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2036—Broad area lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Integrated Circuits (AREA)
DE69220434T 1991-08-27 1992-07-30 Halbleiterlaser Expired - Lifetime DE69220434T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/750,382 US5228049A (en) 1991-08-27 1991-08-27 Beam control in integrated diode laser and power amplifier

Publications (2)

Publication Number Publication Date
DE69220434D1 true DE69220434D1 (de) 1997-07-24
DE69220434T2 DE69220434T2 (de) 1997-12-11

Family

ID=25017642

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69220434T Expired - Lifetime DE69220434T2 (de) 1991-08-27 1992-07-30 Halbleiterlaser

Country Status (4)

Country Link
US (1) US5228049A (de)
EP (1) EP0529817B1 (de)
JP (1) JP3306104B2 (de)
DE (1) DE69220434T2 (de)

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5228049A (en) * 1991-08-27 1993-07-13 Xerox Corporation Beam control in integrated diode laser and power amplifier
US5461637A (en) * 1994-03-16 1995-10-24 Micracor, Inc. High brightness, vertical cavity semiconductor lasers
US5457569A (en) * 1994-06-30 1995-10-10 At&T Ipm Corp. Semiconductor amplifier or laser having integrated lens
US5517517A (en) * 1994-06-30 1996-05-14 At&T Corp. Semiconductor laser having integrated waveguiding lens
DE19626113A1 (de) * 1996-06-28 1998-01-02 Sel Alcatel Ag Optisches Halbleiterbauelement mit tiefem Rippenwellenleiter
DE19717571A1 (de) * 1997-04-25 1998-10-29 Fraunhofer Ges Forschung Diodenlaser-Oszillator oder- Verstärker mit wenigstens einer lichtleitenden Halbleiterschicht
JP3339369B2 (ja) * 1997-05-30 2002-10-28 株式会社デンソー レーザダイオード
FR2768524B1 (fr) * 1997-09-12 1999-10-22 France Telecom Amplificateur a large surface avec recombineur a interferences multimodes
US6122299A (en) * 1997-12-31 2000-09-19 Sdl, Inc. Angled distributed reflector optical device with enhanced light confinement
WO1999066614A1 (en) * 1998-06-18 1999-12-23 University College Cork A semi-conductor device and a method for varying current density in an active region of a junction of the semi-conductor device
JP4100792B2 (ja) * 1998-12-18 2008-06-11 シャープ株式会社 スポットサイズ変換器付き半導体レーザ装置、及びその製造方法
GB0018576D0 (en) * 2000-07-27 2000-09-13 Univ Glasgow Improved semiconductor laser
JP2002158394A (ja) * 2000-11-17 2002-05-31 Fuji Photo Film Co Ltd 露光ヘッドおよび画像記録装置
CN1311595C (zh) * 2001-06-06 2007-04-18 昆特森斯光电技术公司 带有内部镜面的激光二极管
JP4770077B2 (ja) * 2001-07-04 2011-09-07 三菱電機株式会社 波長可変半導体レーザおよび光モジュール
US7139299B2 (en) * 2002-03-04 2006-11-21 Quintessence Photonics Corporation De-tuned distributed feedback laser diode
FR2878631B1 (fr) * 2004-11-29 2007-01-12 Sagem Procede d'identification d'un utilisateur au moyen de caracteristiques biometriques modifiees et base de donnees pour la mise en oeuvre de ce procede
DE102007026925A1 (de) * 2007-02-28 2008-09-04 Osram Opto Semiconductors Gmbh Integrierte Trapezlaseranordnung und Verfahren zu deren Herstellung
DE102008014093B4 (de) * 2007-12-27 2020-02-06 Osram Opto Semiconductors Gmbh Kantenemittierender Halbleiterlaserchip mit zumindest einer Strombarriere
DE102008014092A1 (de) * 2007-12-27 2009-07-02 Osram Opto Semiconductors Gmbh Kantenemittierender Halbleiterlaserchip mit einem strukturierten Kontaktstreifen
JP4444368B1 (ja) * 2009-07-30 2010-03-31 古河電気工業株式会社 集積型半導体レーザ素子および半導体レーザモジュールならびに光伝送システム
JP5323648B2 (ja) * 2009-11-17 2013-10-23 古河電気工業株式会社 半導体光増幅素子
US20110134957A1 (en) * 2009-12-07 2011-06-09 Emcore Corporation Low Chirp Coherent Light Source
CN103875140B (zh) * 2011-10-11 2016-04-27 恩耐公司 具有相位匹配光学元件的高功率半导体激光器
US9306672B2 (en) 2013-03-14 2016-04-05 Encore Corporation Method of fabricating and operating an optical modulator
US9059801B1 (en) 2013-03-14 2015-06-16 Emcore Corporation Optical modulator
US9306372B2 (en) 2013-03-14 2016-04-05 Emcore Corporation Method of fabricating and operating an optical modulator
US9166369B2 (en) 2013-04-09 2015-10-20 Nlight Photonics Corporation Flared laser oscillator waveguide
US9214786B2 (en) 2013-04-09 2015-12-15 Nlight Photonics Corporation Diode laser packages with flared laser oscillator waveguides
US9564733B2 (en) 2014-09-15 2017-02-07 Emcore Corporation Method of fabricating and operating an optical modulator
US10186836B2 (en) 2014-10-10 2019-01-22 Nlight, Inc. Multiple flared laser oscillator waveguide
US10270224B2 (en) 2015-06-04 2019-04-23 Nlight, Inc. Angled DBR-grating laser/amplifier with one or more mode-hopping regions
US9864139B1 (en) * 2016-01-22 2018-01-09 Seagate Technology Llc Uniform laser direct writing for waveguides
US10074959B2 (en) 2016-08-03 2018-09-11 Emcore Corporation Modulated laser source and methods of its fabrication and operation
JP7147356B2 (ja) * 2018-08-14 2022-10-05 富士フイルムビジネスイノベーション株式会社 半導体光増幅器
JP7624742B2 (ja) * 2020-03-31 2025-01-31 国立大学法人京都大学 ２次元フォトニック結晶レーザ

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4791646A (en) * 1985-07-31 1988-12-13 California Institute Of Technology Method for tailoring the two-dimensional spatial gain distribution in optoelectronic devices and its application to tailored gain broad area semiconductor lasers capable of high power operation with very narrow single lobed farfield patterns
JPS62213188A (ja) * 1986-03-14 1987-09-19 Hitachi Ltd 半導体レ−ザ素子
US4744089A (en) * 1986-05-19 1988-05-10 The Perkin-Elmer Corporation Monolithic semiconductor laser and optical amplifier
US4878724A (en) * 1987-07-30 1989-11-07 Trw Inc. Electrooptically tunable phase-locked laser array
DE3836802A1 (de) * 1988-10-28 1990-05-03 Siemens Ag Halbleiterlaseranordnung fuer hohe ausgangsleistungen im lateralen grundmodus
US4980893A (en) * 1989-05-25 1990-12-25 Xerox Corporation Monolithic high density arrays of independently addressable offset semiconductor laser sources
US5003550A (en) * 1990-03-09 1991-03-26 Spectra Diode Laboratories, Inc. Integrated laser-amplifier with steerable beam
US5228049A (en) * 1991-08-27 1993-07-13 Xerox Corporation Beam control in integrated diode laser and power amplifier

Also Published As

Publication number Publication date
EP0529817B1 (de) 1997-06-18
EP0529817A1 (de) 1993-03-03
JPH05211376A (ja) 1993-08-20
US5228049A (en) 1993-07-13
JP3306104B2 (ja) 2002-07-24
DE69220434T2 (de) 1997-12-11

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