DE69128384D1 - Heteroübergang-Bipolartransistor - Google Patents

Heteroübergang-Bipolartransistor

Info

Publication number: DE69128384D1
Authority: DE; Germany
Prior art keywords: bipolar transistor; heterojunction bipolar; heterojunction; transistor; bipolar
Prior art date: 1990-03-30
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Fee Related

Application number

DE69128384T

Other languages

English (en)

Other versions

DE69128384T2 (de

Inventor

Kouhei Morizuka

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Toshiba Corp

Original Assignee

Toshiba Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1990-03-30

Filing date

1991-03-28

Publication date

1998-01-22

1991-03-28 Application filed by Toshiba Corp filed Critical Toshiba Corp

1998-01-22 Application granted granted Critical

1998-01-22 Publication of DE69128384D1 publication Critical patent/DE69128384D1/de

1998-04-30 Publication of DE69128384T2 publication Critical patent/DE69128384T2/de

2011-03-29 Anticipated expiration legal-status Critical

Status Expired - Fee Related legal-status Critical Current

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
- H10D10/80—Heterojunction BJTs
- H10D10/821—Vertical heterojunction BJTs

DE69128384T 1990-03-30 1991-03-28 Heteroübergang-Bipolartransistor Expired - Fee Related DE69128384T2 (de)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP2084373A JP2918275B2 (ja)	1990-03-30	1990-03-30	半導体装置

Publications (2)

Publication Number	Publication Date
DE69128384D1 true DE69128384D1 (de)	1998-01-22
DE69128384T2 DE69128384T2 (de)	1998-04-30

Family

ID=13828732

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
DE69128384T Expired - Fee Related DE69128384T2 (de)	1990-03-30	1991-03-28	Heteroübergang-Bipolartransistor

Country Status (4)

Country	Link
US (1)	US5153692A (de)
EP (1)	EP0472262B1 (de)
JP (1)	JP2918275B2 (de)
DE (1)	DE69128384T2 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
FR2716036B1 (fr) *	1994-02-07	1997-07-11	Mitsubishi Electric Corp	Couche semi-conductrice composée de haute résistance et procédé pour sa croissance cristalline.
US5804487A (en) *	1996-07-10	1998-09-08	Trw Inc.	Method of fabricating high βHBT devices
DE10329663B9 (de) *	2003-07-01	2015-08-13	Infineon Technologies Ag	Verfahren zur Herstellung einer vertikalen Isolation für ein elektronisches Bauelement
CN103107185B (zh) *	2011-11-11	2015-04-08	上海华虹宏力半导体制造有限公司	锗硅功率hbt、其制造方法及锗硅功率hbt多指器件

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US4586071A (en) *	1984-05-11	1986-04-29	International Business Machines Corporation	Heterostructure bipolar transistor
JPH0744182B2 (ja) *	1984-11-09	1995-05-15	株式会社日立製作所	ヘテロ接合バイポ−ラ・トランジスタ

1990
- 1990-03-30 JP JP2084373A patent/JP2918275B2/ja not_active Expired - Fee Related
1991
- 1991-03-28 US US07/676,548 patent/US5153692A/en not_active Expired - Fee Related
- 1991-03-28 EP EP91302780A patent/EP0472262B1/de not_active Expired - Lifetime
- 1991-03-28 DE DE69128384T patent/DE69128384T2/de not_active Expired - Fee Related

Also Published As

Publication number	Publication date
EP0472262A1 (de)	1992-02-26
EP0472262B1 (de)	1997-12-10
JPH03283624A (ja)	1991-12-13
US5153692A (en)	1992-10-06
DE69128384T2 (de)	1998-04-30
JP2918275B2 (ja)	1999-07-12

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Legal Events

Date	Code	Title
1999-01-14	8364	No opposition during term of opposition
1999-05-06	8320	Willingness to grant licences declared (paragraph 23)
2004-01-15	8339	Ceased/non-payment of the annual fee