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DE69030123T2 - Inductive structures for semiconducting integrated circuits - Google Patents

Inductive structures for semiconducting integrated circuits

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Publication number
DE69030123T2
DE69030123T2 DE69030123T DE69030123T DE69030123T2 DE 69030123 T2 DE69030123 T2 DE 69030123T2 DE 69030123 T DE69030123 T DE 69030123T DE 69030123 T DE69030123 T DE 69030123T DE 69030123 T2 DE69030123 T2 DE 69030123T2
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Germany
Prior art keywords
insulating film
electrically insulating
electrical conductor
transformer
turns
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Expired - Fee Related
Application number
DE69030123T
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German (de)
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DE69030123D1 (en
Inventor
Naoto Andoh
Akira Inoue
Kazuhito Nakahara
Yasuharu Nakajima
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Publication of DE69030123D1 publication Critical patent/DE69030123D1/en
Application granted granted Critical
Publication of DE69030123T2 publication Critical patent/DE69030123T2/en
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/20—Inductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F17/00—Fixed inductances of the signal type
    • H01F17/0006—Printed inductances
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F17/00—Fixed inductances of the signal type
    • H01F17/0006—Printed inductances
    • H01F17/0033—Printed inductances with the coil helically wound around a magnetic core
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F21/00—Variable inductances or transformers of the signal type
    • H01F21/02—Variable inductances or transformers of the signal type continuously variable, e.g. variometers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F21/00—Variable inductances or transformers of the signal type
    • H01F21/02—Variable inductances or transformers of the signal type continuously variable, e.g. variometers
    • H01F21/08—Variable inductances or transformers of the signal type continuously variable, e.g. variometers by varying the permeability of the core, e.g. by varying magnetic bias
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F27/00—Details of transformers or inductances, in general
    • H01F27/28—Coils; Windings; Conductive connections
    • H01F27/2804—Printed windings
    • H10W44/501—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F17/00—Fixed inductances of the signal type
    • H01F17/0006—Printed inductances
    • H01F2017/004—Printed inductances with the coil helically wound around an axis without a core
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F17/00—Fixed inductances of the signal type
    • H01F17/0006—Printed inductances
    • H01F2017/0046—Printed inductances with a conductive path having a bridge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F17/00—Fixed inductances of the signal type
    • H01F17/0006—Printed inductances
    • H01F2017/0086—Printed inductances on semiconductor substrate

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Coils Or Transformers For Communication (AREA)
  • Semiconductor Integrated Circuits (AREA)

Description

Die Erfindung betrifft einen Transformator, der mit einer integrierten Halbleiterschaltung integrierbar ist, wie im Oberbegriff von Anspruch 1 beansprucht.The invention relates to a transformer which can be integrated with an integrated semiconductor circuit as claimed in the preamble of claim 1.

Als Transformatoren können mehrere Spiralwindungen verwendet werden, die induktiv gekoppelt sind. Ein Beispiel eines anderen bekannten Transformators, der zwei auf derselben Fläche angeordnete Spiralwindungen nutzt, ist in Draufsicht in Fig. 1 dargestellt. Hierbei ist eine elektrisch leitende Spirale 2 innerhalb einer elektrisch leitenden Spirale 12 angeordnet. Sowohl das Außenende 3 als auch das Innenende 4 der Spirale 2 benötigen Luftbrückenstrukturen 9, die sie gegen Spiralwindungen der Spirale 12 isolieren und diese überkreuzen, und die elektrischen Zugang zur Spirale 2 geben. Da die Spirale 12 außerhalb der Spirale 2 liegt, ist zum Außenende 13 der Spule 12 direkter Zugang verfügbar. Jedoch muss immer noch eine Luftbrückenstruktur 9 vorhanden sein, um für Zugang von außen zum Innenende 14 der Spirale 12 zu sorgen. Wegen des Vorhandenseins dreier Luftbrücken 9 leidet der Transformator von Fig. 1 unter Problemen durch parasitäre Kapazitäten. Außerdem ist die magnetische Kopplung zwischen den Spiralen 2 und 12 beschränkt, da in der Nachbarschaft dieser Windungen nur ein Material mit relativ niedriger Permeabilität, d.h. das Substrat 1, vorhanden ist.As transformers, multiple spiral turns can be used that are inductively coupled. An example of another known transformer that uses two spiral turns arranged on the same surface is shown in plan view in Fig. 1. Here, an electrically conductive spiral 2 is arranged inside an electrically conductive spiral 12. Both the outer end 3 and the inner end 4 of the spiral 2 require air bridge structures 9 that insulate them from and cross spiral turns of the spiral 12 and that provide electrical access to the spiral 2. Since the spiral 12 is outside the spiral 2, direct access is available to the outer end 13 of the coil 12. However, an air bridge structure 9 must still be present to provide access from the outside to the inner end 14 of the spiral 12. Due to the presence of three air bridges 9, the transformer of Fig. 1 suffers from parasitic capacitance problems. In addition, the magnetic coupling between the spirals 2 and 12 is limited since in the vicinity of these turns there is only one material with relatively low permeability, i.e. the substrate 1.

Eine andere bekannte Struktur eines Transformators ist in Explosionsansicht in Fig. 2 dargestellt. Diese Transformatorstruktur enthält ein elektrisch isolierendes Substrat 1, auf dem Isolierfilme 20, 30 und 40 aufeinanderfolgend angeordnet sind. Elektrisch leitende Spiralen 2 und 12 sind jeweils auf den Filmen 20 b zw. 40 angeordnet. Jeder der Filme enthält ein Durchgangsloch durch die jeweiligen Isolierfilme, durch die hindurch sich Leiter 26 bzw. 27 zu einer darunterliegenden Schicht, dem Film 30 im Fall der Spirale 2 und dem Substrat 1 im Fall der Spirale 12, erstrecken. Diese elektrischen, durch die Isolierfilme hindurchgehenden Leiter sorgen für elektrische Verbindung zu jeweiligen Zuleitungen 6 von den Innenenden 4 und 14 der Spiralen 2 und 12. Die zwei Spiralen 2 und 12 weisen denselben Sinn auf, d.h. dieselbe Wicklungsrichtung, und sie liegen übereinander, um die wechselseitige induktive Kopplung zu maximieren. Die Gegeninduktivität der zwei Spiralen wird durch die gegenseitige Geometrie und die Dicken der Isolierfilme kontrolliert. Jedoch ist die Gegeninduktivität zwischen den zwei Spiralen beschränkt, da die Permeabilität der benachbarten Materialien relativ klein ist.Another known structure of a transformer is shown in exploded view in Fig. 2. This transformer structure includes an electrically insulating substrate 1 on which insulating films 20, 30 and 40 are arranged in succession. Electrically conductive spirals 2 and 12 are arranged on the films 20 and 40, respectively. Each of the films includes a through-hole through the respective insulating films through which conductors 26 and 27 extend to an underlying layer, the film 30 in the case of the spiral 2 and the substrate 1 in the case of the spiral 12. These electrical conductors passing through the insulating films provide electrical connection to respective leads 6 from the inner ends 4 and 14 of the spirals 2 and 12. The two spirals 2 and 12 have the same sense, i.e. the same winding direction, and they lie one above the other to form the to maximize mutual inductive coupling. The mutual inductance of the two spirals is controlled by the mutual geometry and the thicknesses of the insulating films. However, the mutual inductance between the two spirals is limited because the permeability of the neighboring materials is relatively small.

In den Fig. 3(a)-3(c) ist eine andere bekannte Transformatorstruktur zur Verwendung in integrierten Halbleiterschaltungen in Schnitt- und Draufsichten dargestellt. Dieser Transformator, wie er dem Oberbegriff von Anspruch 1 entspricht, verwendet eine Lage eines Materials mit relativ hoher Permeabilität, um die induktive Kopplung zwischen den zwei Windungen zu verbessern. Bei dieser bekannten Struktur, wie sie in Patent Abstracts of Japan: Vol. 11, No. 161 [E-509], 23.05.87 sowie in der veröffentlichten Japanischen Patentanmeldung 61-294850 beschrieben ist, ist eine elektrisch leitende Spirale 2 auf einem Halbleitersubstrat 1 angeordnet. Eine zweite Windung 28 umfasst eine einzelne Schleife, die mittels einer elektrisch isolierenden Schicht 4 von der Spirale 2 beabstandet ist. In die Isolierschicht 29 zwischen der Spirale 2 und der Windung 28 ist eine ferromagnetische Lage 31 eingebettet. Da die ferroelektrische Lage 31 zwischen der Spirale 2 und der Windung 28 statt innerhalb der zentralen Öffnung derselben angeordnet ist, ist sie nicht wirksam hinsichtlich einer deutlichen Erhöhung der induktiven Kopplung zwischen diesen zwei Leitern. So ist es bei den bekannten Strukturen schwierig, große Gegeninduktivität und hohen Wirkungsgrad des Transformators zu erzielen.Another known transformer structure for use in semiconductor integrated circuits is shown in cross-sectional and plan views in Figs. 3(a)-3(c). This transformer, as in accordance with the preamble of claim 1, uses a layer of relatively high permeability material to improve the inductive coupling between the two turns. In this known structure, as described in Patent Abstracts of Japan: Vol. 11, No. 161 [E-509], 23.05.87 and in published Japanese Patent Application 61-294850, an electrically conductive spiral 2 is arranged on a semiconductor substrate 1. A second turn 28 comprises a single loop which is spaced from the spiral 2 by an electrically insulating layer 4. A ferromagnetic layer 31 is embedded in the insulating layer 29 between the spiral 2 and the winding 28. Since the ferroelectric layer 31 is arranged between the spiral 2 and the winding 28 rather than within the central opening of the same, it is not effective in significantly increasing the inductive coupling between these two conductors. Thus, with the known structures it is difficult to achieve high mutual inductance and high efficiency of the transformer.

Es ist eine Aufgabe der Erfindung, einen Transformator gemäß dem Oberbegriff von Anspruch 1 mit größerer Gegeninduktivität und höherem Wirkungsgrad zu versehen.It is an object of the invention to provide a transformer according to the preamble of claim 1 with greater mutual inductance and higher efficiency.

Ein erfindungsgemäßer Transformator ist dadurch gekennzeichnet, dass die erste und die zweite Windung sowie der elektrisch isolierende Film eine gemeinsame zentrale Öffnung aufweisen und ein magnetisches Material an der Oberfläche des Substrats in der gemeinsamen zentralen Öffnung angeordnet ist, das die induktive Kopplung zwischen der ersten und zweiten Windung erhöht.A transformer according to the invention is characterized in that the first and second windings and the electrically insulating film have a common central opening and a magnetic material is arranged on the surface of the substrate in the common central opening, which increases the inductive coupling between the first and second windings.

Das Vorhandenseins eines Ferrits innerhalb der Öffnung der Windungen verbessert die gegenseitige Kopplung der Windungen und das Transformatorfunktionsvermögen im Vergleich mit bekannten Transformatoren.The presence of a ferrite inside the opening of the windings improves the mutual coupling of the windings and the transformer functionality compared to known transformers.

Nachfolgend werden Ausführungsbeispiele der Erfindung in Verbindung mit jeweiligem Stand der Technik erörtert, um die durch die Erfindung erzielten Verbesserungen zu veranschaulichen. In den Zeichnungen ist folgendes dargestellt:In the following, embodiments of the invention are discussed in conjunction with the respective prior art in order to illustrate the improvements achieved by the invention. The following is shown in the drawings:

Fig. 1 ist eine Draufsicht auf einen bekannten Transformator, der zwei auf derselben Fläche angeordnete spiralförmige Induktoren verwendet;Fig. 1 is a plan view of a known transformer using two spiral inductors arranged on the same surface;

Fig. 2 ist eine perspektivische Ansicht eines bekannten Transformators, der zwei auf verschiedenen Flächen angeordnete spiralförmige Induktoren verwendet, wobei ein Isolierfilm dazwischenliegt;Fig. 2 is a perspective view of a known transformer using two spiral inductors arranged on different surfaces with an insulating film therebetween;

Fig. 3(a), 3(b) und 3(c) sind eine Schnittansicht bzw. zwei Draufsichten eines bekannten Transformators, der eine magnetische Lage zwischen Spulen verwendet;Figs. 3(a), 3(b) and 3(c) are a sectional view and two plan views, respectively, of a known transformer using a magnetic sheet between coils;

Fig. 4(a), 4(b) und 4(c) sind eine Draufsicht, eine Schnittansicht bzw. eine perspektivische Ansicht eines Transformators gemäß einem ersten Ausführungsbeispiel der Erfindung; undFig. 4(a), 4(b) and 4(c) are a plan view, a sectional view and a perspective view, respectively, of a transformer according to a first embodiment of the invention; and

Fig. 5(a), 5(b) und 5(c) sind eine Draufsicht, eine Schnittansicht bzw. eine perspektivische Ansicht eines Transformators gemäß einem zweiten Ausführungsbeispiel der Erfindung.Figs. 5(a), 5(b) and 5(c) are a plan view, a sectional view and a perspective view, respectively, of a transformer according to a second embodiment of the invention.

Die Fig. 4(a), 4(b) und 4(c) sind eine Draufsicht, eine Schnittansicht bzw. eine perspektivische Ansicht eines in eine integrierte Halbleiterschaltung integrierbaren Transformators gemäß einem ersten Ausführungsbeispiel der Erfindung. Bei dieser Struktur ist eine einzelne Windung 28 aus einem dünnen Metallfilm auf der Oberfläche eines Halbleitersubstrats wie eines solchen aus Galliumarsenid angeordnet. Die Windung 28 enthält ein Paar Zuleitungen 32. Ein elektrisch isolierender Film 33, wie ein solcher aus SiN oder SiON, ist auf der Windung 28 angeordnet. Eine andere einzelne Windung 34 ist auf dem Isolator 33 unmittelbar über der Windung 28, dieser gegenüberstehend, angeordnet. Die Windung 34 enthält Zuleitungen 35. Die Windungen 28 und 34 sowie der Isolierfilm 33 weisen gemeinsame zentrale Öffnungen auf, die im wesentlichen zueinander ausgerichtet sind, um für einen gemeinsamen Kern zu sorgen. Ein ferromagnetischer Körper 36, wie ein Ferrit, ist innerhalb dieser gemeinsamen, zentralen Öffnung angeordnet, um die Gegeninduktivität der Windungen 28 und 34 zu verbessern. Die magnetische Permeabilität des Körpers 36 ist deutlich größer als die des Substrats 1. Darüber hinaus gewährleistet die Anordnung dieses magnetischen Körpers innerhalb des gemeinsamen Kerns der zwei Windungen 28 und 34 gute magnetische Kopplung zwischen diesen Windungen. Im Ergebnis wird aufgrund dieses Ausführungsbeispiels der Erfindung eine relativ hohe Gegeninduktivität, d.h. ein Transformator mit hohem Wirkungsgrad, erhalten. Wie es in der Technik wohlbekannt ist, kann die Permeabilität von Ferritmaterialien ungefähr 25 Hundert betragen, was für sehr starke Kopplung zwischen den zwei Windungen 28 und 34 sorgt. Wie es in den Fig. 4(a) und 4(c) veranschaulicht ist, sind die Zuleitungen 32 und 35 der jeweiligen Windungen vorzugsweise in verschiedenen Richtungen ausgerichtet, um eine unerwünschte kapazitive Kopplung zwischen ihnen zu vermeiden.4(a), 4(b) and 4(c) are a plan view, a sectional view and a perspective view, respectively, of a transformer integrable into a semiconductor integrated circuit according to a first embodiment of the invention. In this structure, a single turn 28 of a thin metal film is disposed on the surface of a semiconductor substrate such as gallium arsenide. The turn 28 includes a pair of leads 32. An electrically insulating film 33 such as SiN or SiON is disposed on the turn 28. Another single turn 34 is disposed on the insulator 33 immediately above and opposite the turn 28. The turn 34 includes leads 35. The turns 28 and 34 and the insulating film 33 have common central openings which are substantially aligned with each other to provide a common core. A ferromagnetic body 36, such as a ferrite, is arranged within this common central opening to improve the mutual inductance of the windings 28 and 34. The magnetic permeability of the body 36 is significantly greater than that of the substrate 1. In addition Furthermore, the arrangement of this magnetic body within the common core of the two windings 28 and 34 ensures good magnetic coupling between these windings. As a result, a relatively high mutual inductance, i.e. a high efficiency transformer, is obtained due to this embodiment of the invention. As is well known in the art, the permeability of ferrite materials can be about 25 hundred, which provides very strong coupling between the two windings 28 and 34. As illustrated in Figs. 4(a) and 4(c), the leads 32 and 35 of the respective windings are preferably oriented in different directions to avoid undesirable capacitive coupling between them.

Die Strukturen der Fig. 4(a)-4(c) werden leicht unter Verwendung herkömmlicher Techniken für Halbleiterbauteile aufgebaut, wie durch Strukturierung von Metall- und Isolierschichten durch Photolithographie, und sie können als Teil einer integrierten Schaltung auf einem Substrat ausgebildet werden, das miteinander verbundene aktive und passive Schaltungselemente aufweist. Der ferromagnetische Körper 36 kann gesondert hergestellt werden und in der gemeinsamen zentralen Öffnung der Windungen und des Isolierfilms 33 angeordnet werden. Alternativ kann das ferromagnetische Material in der gemeinsamen Öffnung der Windungen und der Isolierschicht durch Siebdruck oder eine andere Abscheidungstechnik abgeschieden werden, gefolgt von einem Aushärten und/oder anderen Schritten, die dazu erforderlich sind, für die gewünschten ferromagnetischen Eigenschaften zu sorgen. Vorzugsweise wird das ferromagnetische Material abgeschieden, nachdem die beiden Windungen 28 und 34 sowie der Isolierfilm 33 abgeschieden und strukturiert wurden.The structures of Figures 4(a)-4(c) are readily constructed using conventional semiconductor device techniques, such as patterning metal and insulating layers by photolithography, and can be formed as part of an integrated circuit on a substrate having interconnected active and passive circuit elements. The ferromagnetic body 36 can be separately manufactured and disposed in the common central opening of the turns and insulating film 33. Alternatively, the ferromagnetic material can be deposited in the common opening of the turns and insulating layer by screen printing or other deposition technique, followed by curing and/or other steps necessary to provide the desired ferromagnetic properties. Preferably, the ferromagnetic material is deposited after the two turns 28 and 34 and insulating film 33 have been deposited and patterned.

In den Fig. 5(a), 5(b) und 5(c) ist eine Erweiterung der in den Fig. 4(a)- 4(c) dargestellten Struktur in einer Draufsicht, einer Schnittansicht bzw. einer perspektivischen Ansicht dargestellt. Die Struktur der Fig. 5(a)-5(c) ist identisch mit der von 4(a)-4(c), mit der Ausnahme, dass auf der Windung 34 ein zweiter Isolierfilm 37 angeordnet ist und auf diesem Isolierfilm 37 eine dritte Windung 38 angeordnet ist. Diese dritte Windung 38 umfasst Zuleitungen 39. Die Zuleitungen jeder der drei Windungen sind in verschiedenen Richtungen ausgerichtet. Der magnetische Körper 36 erstreckt sich der Höhe nach so, dass er den gemeinsamen Kern der drei Windungen und der zwei dazwischenliegenden Isolierschichten auffüllt. Zusätzliche Windungen und Isolierfilme können zum Stapel hinzugefügt werden. Dieses Ausführungsbeispiel wird auf dieselbe Weise wie das Ausführungsbeispiel der Fig. 4(a)- 4(c) hergestellt, mit der Ausnahme, dass zum Abscheiden des zweiten Isolierfilms 37 und des die Windung 38 bildenden elektrischen Leiters zusätzliche Schritte erforderlich sind. Es wird dieselbe wünschenswerte, große, wechselseitige induktive Kopplung wie beim früheren Ausführungsbeispiel erhalten, mit der Ausnahme, dass die Kopplung zwischen drei Windungen statt zwischen zweien erfolgt. Bei diesen Strukturen ist die Richtung der gegenseitigen Kopplung im wesentlichen rechtwinklig zur Substratoberfläche.In Figs. 5(a), 5(b) and 5(c) an extension of the structure shown in Figs. 4(a)-4(c) is shown in a plan view, a sectional view and a perspective view, respectively. The structure of Figs. 5(a)-5(c) is identical to that of 4(a)-4(c) except that a second insulating film 37 is disposed on the winding 34 and a third winding 38 is disposed on this insulating film 37. This third winding 38 includes leads 39. The leads of each of the three windings are oriented in different directions. The magnetic body 36 extends in height to fill the common core of the three windings and the two intermediate insulating layers. Additional windings and insulating films can be added to the stack. This embodiment is manufactured in the same manner as the embodiment of Fig. 4(a)-4(c), except that for depositing the second insulating film 37 and the electrical conductor forming the turn 38. The same desirable, large, mutual inductive coupling is obtained as in the previous embodiment, except that the coupling is between three turns instead of two. In these structures, the direction of the mutual coupling is substantially perpendicular to the substrate surface.

Da es durch die Technologie für monilithisch-integrierte Schaltungen am einfachsten ist, Transformatoren mit einzelnen Windungen herzustellen, haben integrierbare Transformatoren von natur aus niedrige Induktivitäten und niedrige Gegeninduktivitäten zwischen Windungen. Bei der Erfindung sind die Gegeninduktivität und der Transformatorwirkungsgrad bei einzelnen Windungen deutlich erhöht, da das ferromagnetische Material sehr nahe an den Transformatorwindungen angeordnet ist.Since monolithic integrated circuit technology makes it easiest to manufacture single-turn transformers, integrated transformers inherently have low inductances and low mutual inductances between turns. In the invention, the mutual inductance and transformer efficiency for single turns are significantly increased because the ferromagnetic material is arranged very close to the transformer turns.

Claims (6)

1. Transformator, der in einer integrierten Halbleiterschaltung integrierbar ist, mit:1. Transformer that can be integrated into a semiconductor integrated circuit, with: - einem Halbleitersubstrat (1) mit einer ersten Fläche;- a semiconductor substrate (1) having a first surface; - einem ersten elektrischen Leiter (28), der auf der ersten Fläche des Substrats (1) angeordnet ist und eine erste Windung mit einem ersten Paar Zuleitungen (32) aufweist;- a first electrical conductor (28) arranged on the first surface of the substrate (1) and having a first turn with a first pair of leads (32); - einem ersten elektrisch isolierenden Film (33), der auf dem ersten elektrischen Leiter (28) angeordnet ist; und- a first electrically insulating film (33) arranged on the first electrical conductor (28); and - einem zweiten elektrischen Leiter (34), der auf dem elektrisch isolierenden Film (33) angeordnet ist und eine zweite Windung mit einem zweiten Paar Zuleitungen (35) aufweist;- a second electrical conductor (34) arranged on the electrically insulating film (33) and having a second turn with a second pair of leads (35); dadurch gekennzeichnet, dasscharacterized in that - die erste und die zweite Windung und der elektrisch isolierende Film eine gemeinsame, zentrale Öffnung aufweisen; und- the first and second turns and the electrically insulating film have a common central opening; and - ein magnetisches Material (36) auf der Oberfläche des Substrats (1) in der gemeinsamen, zentralen Öffnung angeordnet ist, was die induktive Kopplung zwischen der ersten und zweiten Windung erhöht.- a magnetic material (36) is arranged on the surface of the substrate (1) in the common central opening, which increases the inductive coupling between the first and second windings. 2. Transformator nach Anspruch 1, dadurch gekennzeichnet, dass das magnetische Material (36) aus einem Ferritkörper besteht.2. Transformer according to claim 1, characterized in that the magnetic material (36) consists of a ferrite body. 3. Transformator nach einem der Ansprüche 1 oder 2, dadurch gekennzeichnet, dass der elektrisch isolierende Film (33) aus der aus SiN und SiON bestehenden Gruppe ausgewählt ist.3. Transformer according to one of claims 1 or 2, characterized in that the electrically insulating film (33) is selected from the group consisting of SiN and SiON. 4. Transformator nach Anspruch 1, dadurch gekennzeichnet, dass die Paar der Zuleitungen (32, 35) der ersten und der zweiten Windung in verschiedenen Richtungen ausgerichtet sind, um die Kopplung zwischen diesen jeweiligen Zuleitungspaaren zu minimieren.4. Transformer according to claim 1, characterized in that the pairs of leads (32, 35) of the first and second turns are oriented in different directions to minimize the coupling between these respective lead pairs. 5. Transformator nach Anspruch 1, dadurch gekennzeichnet, dass das Substrat (1) aus der aus Galliumarsenid und Indiumphosphid bestehenden Gruppe ausgewählt ist.5. Transformer according to claim 1, characterized in that the substrate (1) is selected from the group consisting of gallium arsenide and indium phosphide. 6. Transformator nach Anspruch 1, ferner gekennzeichnet durch einen zweiten elektrisch isolierenden Film (37), der auf dem zweiten elektrischen Leiter (34) angeordnet ist, und einen dritten elektrischen Leiter (38), der auf dem zweiten elektrisch isolierenden Film (37) so angeordnet ist, dass er dem zweiten elektrischen Leiter (34) gegenübersteht, mit einer dritten Windung und einem dritten Paar Zuleitungen (39), wobei der zweite elektrisch isolierende Film (37) und der dritte elektrische Leiter (38) jeweilige zentrale Öffnungen aufweisen, die mit der gemeinsamen, zentralen Öffnung der ersten und zweiten Windung ausgerichtet sind.6. A transformer according to claim 1, further characterized by a second electrically insulating film (37) disposed on the second electrical conductor (34) and a third electrical conductor (38) disposed on the second electrically insulating film (37) such that it faces the second electrical conductor (34), with a third turn and a third pair of leads (39), the second electrically insulating film (37) and the third electrical conductor (38) having respective central openings aligned with the common central opening of the first and second turns.
DE69030123T 1989-08-18 1990-08-17 Inductive structures for semiconducting integrated circuits Expired - Fee Related DE69030123T2 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1213839A JPH0377360A (en) 1989-08-18 1989-08-18 Semiconductor device

Publications (2)

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DE69030123D1 DE69030123D1 (en) 1997-04-10
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JPH0377360A (en) 1991-04-02
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US5095357A (en) 1992-03-10
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DE69030123D1 (en) 1997-04-10
DE69026164T2 (en) 1996-10-31
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EP0643404A3 (en) 1995-11-08
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EP0649152B1 (en) 1998-11-25
EP0643403B1 (en) 1997-03-05
EP0413348A3 (en) 1993-03-24
EP0413348B1 (en) 1996-03-27
EP0643404B1 (en) 1997-05-14
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DE69026164D1 (en) 1996-05-02
DE69030011T2 (en) 1997-09-04

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