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DE69023765D1 - Verfahren zur Herstellung von Bauelementen mit übereinander angeordneten Feldeffekttransistoren mit Wolfram-Gitter und sich daraus ergebende Struktur. - Google Patents

Verfahren zur Herstellung von Bauelementen mit übereinander angeordneten Feldeffekttransistoren mit Wolfram-Gitter und sich daraus ergebende Struktur.

Info

Publication number
DE69023765D1
DE69023765D1 DE69023765T DE69023765T DE69023765D1 DE 69023765 D1 DE69023765 D1 DE 69023765D1 DE 69023765 T DE69023765 T DE 69023765T DE 69023765 T DE69023765 T DE 69023765T DE 69023765 D1 DE69023765 D1 DE 69023765D1
Authority
DE
Germany
Prior art keywords
production
components
field effect
effect transistors
resulting structure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69023765T
Other languages
English (en)
Other versions
DE69023765T2 (de
Inventor
Carl Cederbaum
Roland Chanclou
Myriam Combes
Patrick Mone
Vincent Vallet
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of DE69023765D1 publication Critical patent/DE69023765D1/de
Publication of DE69023765T2 publication Critical patent/DE69023765T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/12—Static random access memory [SRAM] devices comprising a MOSFET load element
    • H10B10/125—Static random access memory [SRAM] devices comprising a MOSFET load element the MOSFET being a thin film transistor [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0186—Manufacturing their interconnections or electrodes, e.g. source or drain electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
    • H10D88/01—Manufacture or treatment
    • H10W20/0698—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/164—Three dimensional processing
DE69023765T 1990-07-31 1990-07-31 Verfahren zur Herstellung von Bauelementen mit übereinander angeordneten Feldeffekttransistoren mit Wolfram-Gitter und sich daraus ergebende Struktur. Expired - Fee Related DE69023765T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP90480109A EP0469215B1 (de) 1990-07-31 1990-07-31 Verfahren zur Herstellung von Bauelementen mit übereinander angeordneten Feldeffekttransistoren mit Wolfram-Gitter und sich daraus ergebende Struktur

Publications (2)

Publication Number Publication Date
DE69023765D1 true DE69023765D1 (de) 1996-01-04
DE69023765T2 DE69023765T2 (de) 1996-06-20

Family

ID=8205836

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69023765T Expired - Fee Related DE69023765T2 (de) 1990-07-31 1990-07-31 Verfahren zur Herstellung von Bauelementen mit übereinander angeordneten Feldeffekttransistoren mit Wolfram-Gitter und sich daraus ergebende Struktur.

Country Status (4)

Country Link
US (1) US5112765A (de)
EP (1) EP0469215B1 (de)
JP (1) JPH0652783B2 (de)
DE (1) DE69023765T2 (de)

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KR101753927B1 (ko) 2009-11-06 2017-07-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
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KR102329267B1 (ko) * 2014-09-29 2021-11-22 삼성디스플레이 주식회사 박막트랜지스터 기판, 이를 구비한 디스플레이 장치, 박막트랜지스터 기판 제조방법 및 디스플레이 장치 제조방법
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Also Published As

Publication number Publication date
US5112765A (en) 1992-05-12
DE69023765T2 (de) 1996-06-20
JPH0652783B2 (ja) 1994-07-06
JPH0613576A (ja) 1994-01-21
EP0469215B1 (de) 1995-11-22
EP0469215A1 (de) 1992-02-05

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