DE69017301D1 - Halbleiter lichtemittierende Vorrichtung. - Google Patents

Halbleiter lichtemittierende Vorrichtung.

Info

Publication number: DE69017301D1
Authority: DE; Germany
Prior art keywords: light emitting; emitting device; semiconductor light; semiconductor; light
Prior art date: 1989-08-02
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Fee Related

Application number

DE69017301T

Other languages

English (en)

Other versions

DE69017301T2 (de

Inventor

Takeo C O Canon Kabu Tsukamoto

Masahiko Okunuki

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Canon Inc

Original Assignee

Canon Inc

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1989-08-02

Filing date

1990-08-01

Publication date

1995-04-06

1989-08-02 Priority claimed from JP20048189A external-priority patent/JP2692971B2/ja

1989-08-04 Priority claimed from JP20305589A external-priority patent/JP2675867B2/ja

1990-08-01 Application filed by Canon Inc filed Critical Canon Inc

1995-04-06 Application granted granted Critical

1995-04-06 Publication of DE69017301D1 publication Critical patent/DE69017301D1/de

1995-07-20 Publication of DE69017301T2 publication Critical patent/DE69017301T2/de

2010-08-02 Anticipated expiration legal-status Critical

Status Expired - Fee Related legal-status Critical Current

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
- H10H20/821—Bodies characterised by their shape, e.g. curved or truncated substrates of the light-emitting regions, e.g. non-planar junctions
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
- H10H20/014—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group IV materials
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/052—Light-emitting semiconductor devices having Schottky type light-emitting regions; Light emitting semiconductor devices having Metal-Insulator-Semiconductor type light-emitting regions
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/822—Materials of the light-emitting regions
- H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
- H10H20/8242—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP characterised by the dopants

DE69017301T 1989-08-02 1990-08-01 Halbleiter lichtemittierende Vorrichtung. Expired - Fee Related DE69017301T2 (de)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
JP20048189A JP2692971B2 (ja)	1989-08-02	1989-08-02	半導体光放出素子
JP20305589A JP2675867B2 (ja)	1989-08-04	1989-08-04	半導体光放出素子

Publications (2)

Publication Number	Publication Date
DE69017301D1 true DE69017301D1 (de)	1995-04-06
DE69017301T2 DE69017301T2 (de)	1995-07-20

Family

ID=26512221

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
DE69017301T Expired - Fee Related DE69017301T2 (de)	1989-08-02	1990-08-01	Halbleiter lichtemittierende Vorrichtung.

Country Status (3)

Country	Link
US (1)	US5107311A (de)
EP (1)	EP0411612B1 (de)
DE (1)	DE69017301T2 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
DE69223707T2 (de) *	1991-09-13	1998-05-20	Canon Kk	Halbleiter-Elektronenemittierende Einrichtung
JPH05243604A (ja) *	1992-02-27	1993-09-21	Eastman Kodak Japan Kk	発光素子
AU5645096A (en) *	1995-03-29	1996-10-16	Octrooibureau Kisch N.V.	Indirect bandgap semiconductor optoelectronic device
US6111271A (en) *	1996-03-28	2000-08-29	University Of Pretoria	Optoelectronic device with separately controllable carrier injection means
US6380039B2 (en)	1998-05-06	2002-04-30	Interuniversitair Microelektronica Centrum (Imec Vzw)	Method for forming a FET having L-shaped insulating spacers
US6365951B1 (en) *	1998-08-13	2002-04-02	Eugene Robert Worley	Methods on constructing an avalanche light emitting diode
US6653662B2 (en)	2000-11-01	2003-11-25	Matsushita Electric Industrial Co., Ltd.	Semiconductor light-emitting device, method for fabricating the same, and method for driving the same
US7352042B2 (en) *	2002-11-20	2008-04-01	Koninklijke Philips Electronics N.V.	Radiation-emitting semiconductor device and method of manufacturing such a device
JP2007511065A (ja)	2003-11-04	2007-04-26	松下電器産業株式会社	半導体発光装置、照明モジュール、照明装置、および半導体発光装置の製造方法
WO2009093170A1 (en) *	2008-01-21	2009-07-30	Insiava (Pty) Limited	Silicon light emitting device utilising reach-through effects
CN102292834A (zh)	2008-12-15	2011-12-21	因西亚瓦(控股)有限公司	利用穿通效应的硅发光器件

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
NL184589C (nl) *	1979-07-13	1989-09-01	Philips Nv	Halfgeleiderinrichting voor het opwekken van een elektronenbundel en werkwijze voor het vervaardigen van een dergelijke halfgeleiderinrichting.
JPS5955085A (ja) *	1982-09-24	1984-03-29	Fujitsu Ltd	半導体発光装置
CA1251549A (en) *	1984-07-24	1989-03-21	Akira Suzuki	Semiconductor light emitting device
US4810934A (en) *	1986-05-20	1989-03-07	Canon Kabushiki Kaisha	Electron emission device
JP2612572B2 (ja) *	1987-04-14	1997-05-21	キヤノン株式会社	電子放出素子
US4904895A (en) *	1987-05-06	1990-02-27	Canon Kabushiki Kaisha	Electron emission device
US4894832A (en) *	1988-09-15	1990-01-16	North American Philips Corporation	Wide band gap semiconductor light emitting devices
US4999683A (en) *	1988-12-30	1991-03-12	Sanken Electric Co., Ltd.	Avalanche breakdown semiconductor device

1990
- 1990-07-31 US US07/560,769 patent/US5107311A/en not_active Expired - Fee Related
- 1990-08-01 DE DE69017301T patent/DE69017301T2/de not_active Expired - Fee Related
- 1990-08-01 EP EP90114775A patent/EP0411612B1/de not_active Expired - Lifetime

Also Published As

Publication number	Publication date
DE69017301T2 (de)	1995-07-20
EP0411612A3 (en)	1991-09-11
EP0411612A2 (de)	1991-02-06
EP0411612B1 (de)	1995-03-01
US5107311A (en)	1992-04-21

Publication	Publication Date	Title
DE69033837D1 (de)	2001-11-29	Lichtemittierende Vorrichtung
DE3765272D1 (de)	1990-11-08	Lichtempfindliche vorrichtung.
DE3853744D1 (de)	1995-06-14	Elektronenemittierende Vorrichtung.
FR2651605B1 (fr)	1994-01-07	Dispositif emetteur de lumiere a semiconducteur.
DE3752249D1 (de)	1999-03-04	Elektronen emittierende Vorrichtung
DE69020367D1 (de)	1995-08-03	Licht ausstrahlende Vorrichtung.
DK528389D0 (da)	1989-10-24	Lysudstraalende anordning
DK378589A (da)	1990-02-11	Lysudstraalende anordning
DE69129218D1 (de)	1998-05-14	Lichtemittierende Vorrichtung
DE69013032D1 (de)	1994-11-10	Lichtaussendendes Halbleitersystem.
DE68910906D1 (de)	1994-01-05	Leuchtende Vorrichtung.
DE69002846D1 (de)	1993-09-30	Lichtemittierende Diamantanordnung.
IT8323254A0 (it)	1983-10-11	Dispositivo emettitore di luce.
DE68921437D1 (de)	1995-04-06	Elektrolumineszierende Vorrichtung.
DK58090A (da)	1990-09-14	Lysudstraalende anordning
DE69207974D1 (de)	1996-03-14	Lichtemittierende Vorrichtung
DE69001548D1 (de)	1993-06-09	Lichtemittierende halbleitervorrichtung.
DE69101157D1 (de)	1994-03-24	Lichtaussendes Halbleiterelement.
DE69313033D1 (de)	1997-09-18	Lichtemittierende Vorrichtung
DE69017301D1 (de)	1995-04-06	Halbleiter lichtemittierende Vorrichtung.
DE69009266D1 (de)	1994-07-07	Halbleiterlaser-Vorrichtung.
DE69013277D1 (de)	1994-11-17	Beleuchtungsvorrichtung.
DE3887790D1 (de)	1994-03-24	Lichtemittierende Halbleitervorrichtung.
DK27687A (da)	1987-07-30	Lysudsendende indretning
DE3888575D1 (de)	1994-04-28	Lichtemittierende Vorrichtung.

Legal Events

Date	Code	Title	Description
1996-03-28	8364	No opposition during term of opposition
2005-06-09	8339	Ceased/non-payment of the annual fee