DE69012194D1 - Integrierter Halbleiterschaltkreis. - Google Patents

Integrierter Halbleiterschaltkreis.

Info

Publication number: DE69012194D1
Authority: DE; Germany
Prior art keywords: semiconductor circuit; integrated semiconductor; integrated; circuit; semiconductor
Prior art date: 1989-04-19
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Fee Related

Application number

DE69012194T

Other languages

English (en)

Other versions

DE69012194T2 (de

Inventor

Shinzou Nomura

Hiroshi Katsushima

Toru Kawasaki

Masao Unoki

Masaru Nakamura

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

UMC Japan Co Ltd

AGC Inc

Original Assignee

Asahi Glass Co Ltd

Nippon Steel Semiconductor Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1989-04-19

Filing date

1990-04-19

Publication date

1994-10-13

1990-04-19 Application filed by Asahi Glass Co Ltd, Nippon Steel Semiconductor Corp filed Critical Asahi Glass Co Ltd

1994-10-13 Publication of DE69012194D1 publication Critical patent/DE69012194D1/de

1995-03-16 Application granted granted Critical

1995-03-16 Publication of DE69012194T2 publication Critical patent/DE69012194T2/de

2010-04-20 Anticipated expiration legal-status Critical

Status Expired - Fee Related legal-status Critical Current

Classifications

- H10W74/40—
- H10W42/25—

DE69012194T 1989-04-19 1990-04-19 Integrierter Halbleiterschaltkreis. Expired - Fee Related DE69012194T2 (de)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
JP9765089		1989-04-19
JP2042479A JPH0821579B2 (ja)	1989-04-19	1990-02-26	半導体素子・集積回路装置

Publications (2)

Publication Number	Publication Date
DE69012194D1 true DE69012194D1 (de)	1994-10-13
DE69012194T2 DE69012194T2 (de)	1995-03-16

Family

ID=26382184

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
DE69012194T Expired - Fee Related DE69012194T2 (de)	1989-04-19	1990-04-19	Integrierter Halbleiterschaltkreis.

Country Status (6)

Country	Link
US (1)	US5117272A (de)
EP (1)	EP0393682B1 (de)
JP (1)	JPH0821579B2 (de)
KR (1)	KR960008902B1 (de)
CA (1)	CA2014821C (de)
DE (1)	DE69012194T2 (de)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP2952962B2 (ja) *	1989-05-31	1999-09-27	旭硝子株式会社	汚染防止保護器具
DE69225337T2 (de) *	1991-03-08	1998-08-27	Japan Gore Tex Inc	In Harz versiegelte Halbleitervorrichtung bestehend aus porösem Fluorkohlenstoffharz
US5312716A (en) *	1991-06-06	1994-05-17	Asahi Glass Company Ltd.	Process for producing a semiconductor
US5296283A (en) *	1992-01-13	1994-03-22	E. I. Du Pont De Nemours And Company	Protective coating for machine-readable markings
US5502132A (en) *	1992-07-27	1996-03-26	Asahi Glass Company Ltd.	Process for producing a perfluoro copolymer
US5364929A (en) *	1993-01-13	1994-11-15	E. I. Du Pont De Nemours And Company	Dissolution of tetrafluoroethylene polymers at superautogenous pressure
US5438022A (en)	1993-12-14	1995-08-01	At&T Global Information Solutions Company	Method for using low dielectric constant material in integrated circuit fabrication
US5889104A (en) *	1996-01-11	1999-03-30	W. L. Gore & Associates, Inc.	Low dielectric constant material for use as an insulation element in an electronic device
EP0769788A3 (de) *	1995-10-20	1998-01-14	W.L. Gore & Associates, Inc.	Material mit niedriger dielektrischer Konstante für die Verwendung als Isolierelement in einem elektronischen Gerät
TW378345B (en) *	1997-01-22	2000-01-01	Hitachi Ltd	Resin package type semiconductor device and manufacturing method thereof
JP2002513512A (ja) *	1997-04-03	2002-05-08	ダブリュ．エル．ゴアアンドアソシエーツ，インコーポレイティド	改良された絶縁耐力を備えた低誘電率材料
DE19752926A1 (de) *	1997-11-28	1999-06-10	Bosch Gmbh Robert	Verfahren zum Aufbringen eines Schutzlacks auf einen Wafer
US6912775B1 (en) *	1998-02-25	2005-07-05	Seagate Technology Llc	Assembly device for assembling components
US6894109B1 (en) *	1998-12-11	2005-05-17	Borealis Technology Oy	Method of producing pelletized polyolefin
US6965165B2 (en) *	1998-12-21	2005-11-15	Mou-Shiung Lin	Top layers of metal for high performance IC's
US6592650B2 (en)	2000-05-19	2003-07-15	Membrane Technology And Research, Inc.	Gas separation using organic-vapor-resistant membranes and PSA
US6361582B1 (en)	2000-05-19	2002-03-26	Membrane Technology And Research, Inc.	Gas separation using C3+ hydrocarbon-resistant membranes
US6579341B2 (en)	2000-05-19	2003-06-17	Membrane Technology And Research, Inc.	Nitrogen gas separation using organic-vapor-resistant membranes
US6544316B2 (en)	2000-05-19	2003-04-08	Membrane Technology And Research, Inc.	Hydrogen gas separation using organic-vapor-resistant membranes
US6572679B2 (en)	2000-05-19	2003-06-03	Membrane Technology And Research, Inc.	Gas separation using organic-vapor-resistant membranes in conjunction with organic-vapor-selective membranes
US6572680B2 (en)	2000-05-19	2003-06-03	Membrane Technology And Research, Inc.	Carbon dioxide gas separation using organic-vapor-resistant membranes
US6361583B1 (en)	2000-05-19	2002-03-26	Membrane Technology And Research, Inc.	Gas separation using organic-vapor-resistant membranes
JP2003073435A (ja) *	2001-08-31	2003-03-12	Nof Corp	熱硬化性樹脂組成物、樹脂硬化膜および用途
US7060634B2 (en) *	2002-01-17	2006-06-13	Silecs Oy	Materials and methods for forming hybrid organic-inorganic dielectric materials for integrated circuit applications
US6896717B2 (en) *	2002-07-05	2005-05-24	Membrane Technology And Research, Inc.	Gas separation using coated membranes
US7361990B2 (en) *	2005-03-17	2008-04-22	Taiwan Semiconductor Manufacturing Company, Ltd.	Reducing cracking of high-lead or lead-free bumps by matching sizes of contact pads and bump pads
WO2008055051A2 (en)	2006-10-27	2008-05-08	Cms Technologies Holdings Inc.	Removal of water and methanol from fluids
GB2520546A (en) *	2013-11-25	2015-05-27	Esp Technology Ltd	Polymer process

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS6051262B2 (ja) *	1977-02-17	1985-11-13	富士通株式会社	半導体装置
JPS57181146A (en) *	1981-04-30	1982-11-08	Hitachi Ltd	Resin-sealed semiconductor device
US4818812A (en) *	1983-08-22	1989-04-04	International Business Machines Corporation	Sealant for integrated circuit modules, polyester suitable therefor and preparation of polyester
JPS61154151A (ja) *	1984-12-27	1986-07-12	Nitto Electric Ind Co Ltd	半導体装置
JPS62177950A (ja) *	1986-01-31	1987-08-04	Hitachi Ltd	半導体装置
CA1305823C (en) *	1986-08-29	1992-07-28	Union Carbide Corporation	Photocurable blends of cyclic ethers and cycloaliphatic epoxides
JPS63238115A (ja) *	1987-03-27	1988-10-04	Asahi Glass Co Ltd	環状構造を有する含フツ素共重合体の製造法
JPH0727921B2 (ja) *	1987-07-31	1995-03-29	日本電気株式会社	半導体装置の製造方法
JPH0670197B2 (ja) *	1987-09-17	1994-09-07	ハニー化成株式会社	電着塗装用樹脂組成物
DE3808927A1 (de) *	1988-03-17	1989-10-05	Ciba Geigy Ag	Negativ-fotoresists von polyimid-typ mit 1,2-disulfonen
JP2752393B2 (ja) *	1988-11-10	1998-05-18	旭硝子株式会社	コーティング用含フッ素重合体組成物

1990
- 1990-02-26 JP JP2042479A patent/JPH0821579B2/ja not_active Expired - Lifetime
- 1990-04-16 US US07/509,144 patent/US5117272A/en not_active Expired - Lifetime
- 1990-04-18 CA CA002014821A patent/CA2014821C/en not_active Expired - Fee Related
- 1990-04-19 EP EP90107462A patent/EP0393682B1/de not_active Expired - Lifetime
- 1990-04-19 KR KR1019900005502A patent/KR960008902B1/ko not_active Expired - Fee Related
- 1990-04-19 DE DE69012194T patent/DE69012194T2/de not_active Expired - Fee Related

Also Published As

Publication number	Publication date
KR900017105A (ko)	1990-11-15
JPH0821579B2 (ja)	1996-03-04
US5117272A (en)	1992-05-26
JPH0368140A (ja)	1991-03-25
EP0393682B1 (de)	1994-09-07
EP0393682A2 (de)	1990-10-24
CA2014821A1 (en)	1990-10-19
DE69012194T2 (de)	1995-03-16
CA2014821C (en)	1993-10-26
KR960008902B1 (ko)	1996-07-05
EP0393682A3 (en)	1990-12-19

Publication	Publication Date	Title
DE69013267D1 (de)	1994-11-17	Integrierte Halbleiterschaltungsanordnung.
DE69023565D1 (de)	1995-12-21	Integrierte Halbleiterschaltung.
DE69026164D1 (de)	1996-05-02	Halbleitende integrierte Schaltung
DE58906492D1 (de)	1994-02-03	Halbleiterschaltung.
DE69012194D1 (de)	1994-10-13	Integrierter Halbleiterschaltkreis.
DE3853814D1 (de)	1995-06-22	Integrierte Halbleiterschaltung.
DE3879804D1 (de)	1993-05-06	Integrierte halbleiterschaltungsvorrichtung.
DE69124735D1 (de)	1997-03-27	Integrierte Halbleiterschaltung
KR900012345A (ko)	1990-08-03	집적 회로 칩
NO891828D0 (no)	1989-05-03	Integrert kretskort.
DE68921088D1 (de)	1995-03-23	Integrierte Halbleiterschaltung.
KR890015413A (ko)	1989-10-30	반도체 집적회로
DE69130819D1 (de)	1999-03-11	Integrierte Halbleiterschaltung
DE3782775D1 (de)	1993-01-07	Integrierte halbleiterschaltung.
DE69126848D1 (de)	1997-08-21	Integrierte Halbleiterschaltung
KR900012359A (ko)	1990-08-03	집적회로 칩
DE69011038D1 (de)	1994-09-01	Integrierte Halbleiterschaltung.
DE3884492D1 (de)	1993-11-04	Integrierte halbleiterschaltungsanordnung.
DE3889570D1 (de)	1994-06-23	Halbleiterschaltung.
DE69111528D1 (de)	1995-08-31	Integrierter Halbleiterschaltkreis.
DE68916093D1 (de)	1994-07-21	Integrierte Schaltung.
DE69031671D1 (de)	1997-12-11	Integrierte Halbleiterschaltung
DE68929104D1 (de)	2000-01-05	Integrierte Halbleiterschaltung
DE68910445D1 (de)	1993-12-09	Integrierter Halbleiterschaltkreis.
DE69026226D1 (de)	1996-05-02	Integrierte Halbleiterschaltung

Legal Events

Date	Code	Title	Description
1995-10-05	8364	No opposition during term of opposition
2009-02-19	8339	Ceased/non-payment of the annual fee