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DE69730306D1 - Dateneinschreibschaltung für nichtflüchtigen Halbleiterspeicher - Google Patents

Dateneinschreibschaltung für nichtflüchtigen Halbleiterspeicher

Info

Publication number
DE69730306D1
DE69730306D1 DE69730306T DE69730306T DE69730306D1 DE 69730306 D1 DE69730306 D1 DE 69730306D1 DE 69730306 T DE69730306 T DE 69730306T DE 69730306 T DE69730306 T DE 69730306T DE 69730306 D1 DE69730306 D1 DE 69730306D1
Authority
DE
Germany
Prior art keywords
semiconductor memory
data write
write circuit
volatile semiconductor
volatile
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69730306T
Other languages
English (en)
Other versions
DE69730306T2 (de
Inventor
Yasuaki Hirano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Application granted granted Critical
Publication of DE69730306D1 publication Critical patent/DE69730306D1/de
Publication of DE69730306T2 publication Critical patent/DE69730306T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/12—Programming voltage switching circuits
DE69730306T 1996-12-25 1997-12-23 Dateneinschreibschaltung für nichtflüchtigen Halbleiterspeicher Expired - Lifetime DE69730306T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP34576596A JP3401395B2 (ja) 1996-12-25 1996-12-25 不揮発性半導体メモリのデータ書き込み回路
JP34576596 1996-12-25

Publications (2)

Publication Number Publication Date
DE69730306D1 true DE69730306D1 (de) 2004-09-23
DE69730306T2 DE69730306T2 (de) 2005-08-18

Family

ID=18378829

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69730306T Expired - Lifetime DE69730306T2 (de) 1996-12-25 1997-12-23 Dateneinschreibschaltung für nichtflüchtigen Halbleiterspeicher

Country Status (6)

Country Link
US (1) US5910918A (de)
EP (1) EP0851432B1 (de)
JP (1) JP3401395B2 (de)
KR (1) KR100294311B1 (de)
DE (1) DE69730306T2 (de)
TW (1) TW342499B (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3883687B2 (ja) * 1998-02-16 2007-02-21 株式会社ルネサステクノロジ 半導体装置、メモリカード及びデータ処理システム
JP2000040382A (ja) * 1998-07-23 2000-02-08 Sony Corp 不揮発性半導体記憶装置およびそのデータ書き込み方法
TW477065B (en) * 2001-01-30 2002-02-21 Ememory Technology Inc Manufacturing method of flash memory cell structure with dynamic-like write-in/erasing through channel and its operating method
US6590810B2 (en) * 2001-08-15 2003-07-08 Winbond Electronics Corporation Source biasing circuit for flash EEPROM
JP4454896B2 (ja) * 2001-09-27 2010-04-21 シャープ株式会社 仮想接地型不揮発性半導体記憶装置
JP2004348818A (ja) * 2003-05-20 2004-12-09 Sharp Corp 半導体記憶装置の書込制御方法及びシステム並びに携帯電子機器
US20080237696A1 (en) * 2004-07-01 2008-10-02 Chih-Hsin Wang Alignment protection in non-volatile memory and array
CN100562943C (zh) * 2005-09-29 2009-11-25 旺宏电子股份有限公司 非挥发性记忆体电路及其设定方法
CN103811061B (zh) * 2014-03-05 2016-08-24 上海华虹宏力半导体制造有限公司 Eeprom及其存储阵列
CN106297871B (zh) * 2016-07-25 2019-12-03 中电海康集团有限公司 一种自旋力矩转移磁性随机存储器的写电路结构
SE540822C2 (en) 2017-03-30 2018-11-20 Valmet Oy A method of threading a fibrous web and a reel-up for carrying out the method

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6432494A (en) * 1987-07-27 1989-02-02 Mitsubishi Electric Corp Non-volatile semiconductor storage device
GB8807225D0 (en) * 1988-03-25 1988-04-27 Hughes Microelectronics Ltd Nonvolatile ram cell
US5363330A (en) * 1991-01-28 1994-11-08 Mitsubishi Denki Kabushiki Kaisha Non-volatile semiconductor memory device incorporating data latch and address counter for page mode programming
US5361227A (en) * 1991-12-19 1994-11-01 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory device and memory system using the same
KR960000616B1 (ko) * 1993-01-13 1996-01-10 삼성전자주식회사 불휘발성 반도체 메모리 장치
US5422842A (en) * 1993-07-08 1995-06-06 Sundisk Corporation Method and circuit for simultaneously programming and verifying the programming of selected EEPROM cells
JP2922116B2 (ja) * 1993-09-02 1999-07-19 株式会社東芝 半導体記憶装置
JP3153730B2 (ja) * 1995-05-16 2001-04-09 株式会社東芝 不揮発性半導体記憶装置

Also Published As

Publication number Publication date
JPH10188583A (ja) 1998-07-21
DE69730306T2 (de) 2005-08-18
EP0851432A2 (de) 1998-07-01
KR19980064051A (ko) 1998-10-07
EP0851432A3 (de) 1999-06-09
KR100294311B1 (ko) 2001-09-17
JP3401395B2 (ja) 2003-04-28
TW342499B (en) 1998-10-11
EP0851432B1 (de) 2004-08-18
US5910918A (en) 1999-06-08

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