DE69627954D1 - Herstellungsverfahren von Luftbrücker - Google Patents
Herstellungsverfahren von LuftbrückerInfo
- Publication number
- DE69627954D1 DE69627954D1 DE69627954T DE69627954T DE69627954D1 DE 69627954 D1 DE69627954 D1 DE 69627954D1 DE 69627954 T DE69627954 T DE 69627954T DE 69627954 T DE69627954 T DE 69627954T DE 69627954 D1 DE69627954 D1 DE 69627954D1
- Authority
- DE
- Germany
- Prior art keywords
- manufacturing process
- air bridges
- bridges
- air
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H10P14/60—
-
- H10W20/48—
-
- H10W20/072—
-
- H10W20/46—
-
- H10W20/483—
-
- H10W70/65—
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US54707495A | 1995-10-23 | 1995-10-23 | |
| US547074 | 1995-10-23 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE69627954D1 true DE69627954D1 (de) | 2003-06-12 |
| DE69627954T2 DE69627954T2 (de) | 2004-02-19 |
Family
ID=24183250
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE69627954T Expired - Fee Related DE69627954T2 (de) | 1995-10-23 | 1996-10-16 | Herstellungsverfahren von Luftbrücker |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US6268262B1 (de) |
| EP (1) | EP0771026B1 (de) |
| JP (1) | JPH09172066A (de) |
| KR (1) | KR100415338B1 (de) |
| DE (1) | DE69627954T2 (de) |
| TW (1) | TW308719B (de) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6294455B1 (en) * | 1997-08-20 | 2001-09-25 | Micron Technology, Inc. | Conductive lines, coaxial lines, integrated circuitry, and methods of forming conductive lines, coaxial lines, and integrated circuitry |
| US6670719B2 (en) | 1999-08-25 | 2003-12-30 | Micron Technology, Inc. | Microelectronic device package filled with liquid or pressurized gas and associated method of manufacture |
| US6709968B1 (en) | 2000-08-16 | 2004-03-23 | Micron Technology, Inc. | Microelectronic device with package with conductive elements and associated method of manufacture |
| US6875687B1 (en) | 1999-10-18 | 2005-04-05 | Applied Materials, Inc. | Capping layer for extreme low dielectric constant films |
| EP1094506A3 (de) * | 1999-10-18 | 2004-03-03 | Applied Materials, Inc. | Schutzschicht für Filme mit besonders kleiner Dielektrizitätskonstante |
| DE19957302C2 (de) * | 1999-11-29 | 2001-11-15 | Infineon Technologies Ag | Substrat mit mindestens zwei darauf angeordneten Metallstrukturen und Verfahren zu dessen Herstellung |
| WO2001069672A1 (en) * | 2000-03-13 | 2001-09-20 | Koninklijke Philips Electronics N.V. | A method of manufacturing a semiconductor device |
| US6798064B1 (en) * | 2000-07-12 | 2004-09-28 | Motorola, Inc. | Electronic component and method of manufacture |
| US6413852B1 (en) * | 2000-08-31 | 2002-07-02 | International Business Machines Corporation | Method of forming multilevel interconnect structure containing air gaps including utilizing both sacrificial and placeholder material |
| US6449839B1 (en) * | 2000-09-06 | 2002-09-17 | Visteon Global Tech., Inc. | Electrical circuit board and a method for making the same |
| TW535253B (en) * | 2000-09-08 | 2003-06-01 | Applied Materials Inc | Plasma treatment of silicon carbide films |
| DE10109778A1 (de) * | 2001-03-01 | 2002-09-19 | Infineon Technologies Ag | Hohlraumstruktur und Verfahren zum Herstellen einer Hohlraumstruktur |
| DE10142201C2 (de) * | 2001-08-29 | 2003-10-16 | Infineon Technologies Ag | Verfahren zur Erzeugung von Hohlräumen mit Submikrometer-Strukturen in einer Halbleitereinrichtung mittels einer gefrierenden Prozessflüssigkeit |
| JP3793143B2 (ja) * | 2002-11-28 | 2006-07-05 | 株式会社シマノ | 自転車用電子制御装置 |
| ATE358330T1 (de) * | 2003-12-10 | 2007-04-15 | Freescale Semiconductor Inc | Verfahren um ein element herzustellen welches einen von magnetischem material umgebenen elektrischen leiter enthält |
| US7262586B1 (en) | 2005-03-31 | 2007-08-28 | Cypress Semiconductor Corporation | Shunt type voltage regulator |
| JP5072417B2 (ja) * | 2007-04-23 | 2012-11-14 | 株式会社東芝 | 半導体装置およびその製造方法 |
| US7964442B2 (en) * | 2007-10-09 | 2011-06-21 | Applied Materials, Inc. | Methods to obtain low k dielectric barrier with superior etch resistivity |
| JP2013089859A (ja) * | 2011-10-20 | 2013-05-13 | Toshiba Corp | 半導体装置の製造方法 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4756977A (en) | 1986-12-03 | 1988-07-12 | Dow Corning Corporation | Multilayer ceramics from hydrogen silsesquioxane |
| JP2703773B2 (ja) * | 1988-04-14 | 1998-01-26 | シャープ株式会社 | 半導体装置の製造方法 |
| US5354695A (en) * | 1992-04-08 | 1994-10-11 | Leedy Glenn J | Membrane dielectric isolation IC fabrication |
| JPH02177550A (ja) * | 1988-12-28 | 1990-07-10 | Toshiba Corp | 半導体装置およびその製造方法 |
| JP2856778B2 (ja) * | 1989-09-07 | 1999-02-10 | 株式会社東芝 | 半導体装置の配線構造 |
| JPH04268750A (ja) * | 1991-02-25 | 1992-09-24 | Toshiba Corp | 半導体集積回路 |
| US5374792A (en) * | 1993-01-04 | 1994-12-20 | General Electric Company | Micromechanical moving structures including multiple contact switching system |
| US5353498A (en) * | 1993-02-08 | 1994-10-11 | General Electric Company | Method for fabricating an integrated circuit module |
| US5324683A (en) | 1993-06-02 | 1994-06-28 | Motorola, Inc. | Method of forming a semiconductor structure having an air region |
| US5461003A (en) * | 1994-05-27 | 1995-10-24 | Texas Instruments Incorporated | Multilevel interconnect structure with air gaps formed between metal leads |
| US5674758A (en) * | 1995-06-06 | 1997-10-07 | Regents Of The University Of California | Silicon on insulator achieved using electrochemical etching |
| EP0895090B1 (de) * | 1997-07-31 | 2003-12-10 | STMicroelectronics S.r.l. | Verfahren zum Herstellen hochempfindlicher integrierter Beschleunigungs- und Gyroskopsensoren und Sensoren, die derartig hergestellt werden |
-
1996
- 1996-10-11 TW TW085112418A patent/TW308719B/zh active
- 1996-10-16 EP EP96307505A patent/EP0771026B1/de not_active Expired - Lifetime
- 1996-10-16 DE DE69627954T patent/DE69627954T2/de not_active Expired - Fee Related
- 1996-10-21 JP JP8277686A patent/JPH09172066A/ja active Pending
- 1996-10-23 KR KR1019960047594A patent/KR100415338B1/ko not_active Expired - Fee Related
-
1997
- 1997-08-11 US US08/999,951 patent/US6268262B1/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| EP0771026B1 (de) | 2003-05-07 |
| KR970023839A (ko) | 1997-05-30 |
| EP0771026A2 (de) | 1997-05-02 |
| JPH09172066A (ja) | 1997-06-30 |
| KR100415338B1 (ko) | 2004-04-13 |
| TW308719B (de) | 1997-06-21 |
| US6268262B1 (en) | 2001-07-31 |
| DE69627954T2 (de) | 2004-02-19 |
| EP0771026A3 (de) | 1998-06-10 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |