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DE69617301D1 - Speichervorrichtung - Google Patents

Speichervorrichtung

Info

Publication number
DE69617301D1
DE69617301D1 DE69617301T DE69617301T DE69617301D1 DE 69617301 D1 DE69617301 D1 DE 69617301D1 DE 69617301 T DE69617301 T DE 69617301T DE 69617301 T DE69617301 T DE 69617301T DE 69617301 D1 DE69617301 D1 DE 69617301D1
Authority
DE
Germany
Prior art keywords
storage device
storage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69617301T
Other languages
English (en)
Other versions
DE69617301T2 (de
Inventor
Gary Gibson
Theodore I Kamins
Marvin S Keshner
Steven L Neberhuis
Craig M Perlov
Chung Ching Yang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HP Inc
Original Assignee
Hewlett Packard Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hewlett Packard Co filed Critical Hewlett Packard Co
Publication of DE69617301D1 publication Critical patent/DE69617301D1/de
Application granted granted Critical
Publication of DE69617301T2 publication Critical patent/DE69617301T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
    • G11B9/10—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using electron beam; Record carriers therefor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/84—Manufacture, treatment, or detection of nanostructure
    • Y10S977/849—Manufacture, treatment, or detection of nanostructure with scanning probe
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/84—Manufacture, treatment, or detection of nanostructure
    • Y10S977/849—Manufacture, treatment, or detection of nanostructure with scanning probe
    • Y10S977/86—Scanning probe structure
    • Y10S977/861—Scanning tunneling probe
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/84—Manufacture, treatment, or detection of nanostructure
    • Y10S977/849—Manufacture, treatment, or detection of nanostructure with scanning probe
    • Y10S977/86—Scanning probe structure
    • Y10S977/863—Atomic force probe
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/84—Manufacture, treatment, or detection of nanostructure
    • Y10S977/849—Manufacture, treatment, or detection of nanostructure with scanning probe
    • Y10S977/86—Scanning probe structure
    • Y10S977/868—Scanning probe structure with optical means
    • Y10S977/869—Optical microscope
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/84—Manufacture, treatment, or detection of nanostructure
    • Y10S977/88—Manufacture, treatment, or detection of nanostructure with arrangement, process, or apparatus for testing
    • Y10S977/881—Microscopy or spectroscopy, e.g. sem, tem
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/943—Information storage or retrieval using nanostructure

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Semiconductor Memories (AREA)
DE69617301T 1995-03-20 1996-03-18 Speichervorrichtung Expired - Fee Related DE69617301T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US40662895A 1995-03-20 1995-03-20
US08/501,432 US5557596A (en) 1995-03-20 1995-07-12 Ultra-high density storage device

Publications (2)

Publication Number Publication Date
DE69617301D1 true DE69617301D1 (de) 2002-01-10
DE69617301T2 DE69617301T2 (de) 2002-05-08

Family

ID=27019597

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69617301T Expired - Fee Related DE69617301T2 (de) 1995-03-20 1996-03-18 Speichervorrichtung

Country Status (4)

Country Link
US (1) US5557596A (de)
EP (1) EP0734017B1 (de)
JP (1) JPH097240A (de)
DE (1) DE69617301T2 (de)

Families Citing this family (172)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3716467B2 (ja) * 1995-07-19 2005-11-16 ソニー株式会社 記録媒体並びに情報再生装置、情報記録装置及び情報記録再生装置
US6087674A (en) * 1996-10-28 2000-07-11 Energy Conversion Devices, Inc. Memory element with memory material comprising phase-change material and dielectric material
KR100229044B1 (ko) * 1997-07-29 1999-11-01 윤종용 일회 기록형 광디스크 및 그 제조방법
US6017618A (en) * 1997-10-29 2000-01-25 International Business Machines Corporation Ultra high density storage media and method thereof
DE19824592C2 (de) * 1998-06-02 2001-12-06 Reinecke Karin Verfahren und Vorrichtung zur permanenten Datenspeicherung
WO1999063536A2 (en) * 1998-06-05 1999-12-09 Massachusetts Institute Of Technology Very-high-density memory device utilizing a scintillating data-storage medium
US6411589B1 (en) * 1998-07-29 2002-06-25 Hewlett-Packard Company System and method for forming electrostatically actuated data storage mechanisms
GB9816799D0 (en) 1998-08-03 1998-09-30 Anson Anthony W A means of writing,storing and retrieving binary information
US6587408B1 (en) * 1998-10-01 2003-07-01 Massachusetts Institute Of Technology High-density mechanical memory and turing machine
US7260051B1 (en) 1998-12-18 2007-08-21 Nanochip, Inc. Molecular memory medium and molecular memory integrated circuit
US7064500B2 (en) * 2000-05-26 2006-06-20 Exaconnect Corp. Semi-conductor interconnect using free space electron switch
US6800877B2 (en) * 2000-05-26 2004-10-05 Exaconnect Corp. Semi-conductor interconnect using free space electron switch
US6801002B2 (en) * 2000-05-26 2004-10-05 Exaconnect Corp. Use of a free space electron switch in a telecommunications network
US6545425B2 (en) 2000-05-26 2003-04-08 Exaconnect Corp. Use of a free space electron switch in a telecommunications network
US6407516B1 (en) 2000-05-26 2002-06-18 Exaconnect Inc. Free space electron switch
US6274463B1 (en) * 2000-07-31 2001-08-14 Hewlett-Packard Company Fabrication of a photoconductive or a cathoconductive device using lateral solid overgrowth method
US6473388B1 (en) * 2000-08-31 2002-10-29 Hewlett Packard Company Ultra-high density information storage device based on modulated cathodoconductivity
US6402692B1 (en) 2000-09-19 2002-06-11 Hewlett-Packard Co. Apparatus and method for detecting and storing information relating to an animal
US6775034B1 (en) * 2000-10-11 2004-08-10 Hewlett-Packard Development Company, L.P. Portable scanning apparatus having high storage capacity
US6629193B1 (en) * 2000-10-24 2003-09-30 Hewlett-Packard Development Company, L.P. Solid-state information storage device
US6632175B1 (en) * 2000-11-08 2003-10-14 Hewlett-Packard Development Company, L.P. Swallowable data recorder capsule medical device
US6929636B1 (en) 2000-11-08 2005-08-16 Hewlett-Packard Development Company, L.P. Internal drug dispenser capsule medical device
US6275410B1 (en) 2000-11-09 2001-08-14 Hewlett-Packard Co. Data recording systems and methods for facilitating data recovery with emitter failure
US6507552B2 (en) * 2000-12-01 2003-01-14 Hewlett-Packard Company AFM version of diode-and cathodoconductivity-and cathodoluminescence-based data storage media
US6522566B2 (en) 2000-12-01 2003-02-18 Hewlett-Packard Company System modules with atomic resolution storage memory
US20020095680A1 (en) * 2001-01-12 2002-07-18 Davidson Robert J. Personal movie storage module
TW571291B (en) * 2001-01-31 2004-01-11 Ibm Mechanical data processing
US7170842B2 (en) * 2001-02-15 2007-01-30 Hewlett-Packard Development Company, L.P. Methods for conducting current between a scanned-probe and storage medium
US6815875B2 (en) * 2001-02-27 2004-11-09 Hewlett-Packard Development Company, L.P. Electron source having planar emission region and focusing structure
US6735163B2 (en) * 2001-03-02 2004-05-11 Hewlett-Packard Development Company, L.P. Ultra-high density storage device with resonant scanning micromover
US6590850B2 (en) 2001-03-07 2003-07-08 Hewlett-Packard Development Company, L.P. Packaging for storage devices using electron emissions
US6583524B2 (en) * 2001-03-07 2003-06-24 Hewlett-Packard Company Micro-mover with balanced dynamics
US20020128865A1 (en) * 2001-03-09 2002-09-12 Alten Thomas W. Von Personal medical database device
US6791931B2 (en) 2001-03-16 2004-09-14 Hewlett-Packard Development Company, L.P. Accelerometer using field emitter technology
US6704267B2 (en) * 2001-03-23 2004-03-09 Hewlett-Packard Development Company, L.P. Atomic resolution storage systems with enhanced magnetic field protection
US6643248B2 (en) * 2001-04-16 2003-11-04 Hewlett-Packard Development Company, L.P. Data storage device
US6911768B2 (en) 2001-04-30 2005-06-28 Hewlett-Packard Development Company, L.P. Tunneling emitter with nanohole openings
US6882100B2 (en) * 2001-04-30 2005-04-19 Hewlett-Packard Development Company, L.P. Dielectric light device
US6753544B2 (en) * 2001-04-30 2004-06-22 Hewlett-Packard Development Company, L.P. Silicon-based dielectric tunneling emitter
US6781146B2 (en) * 2001-04-30 2004-08-24 Hewlett-Packard Development Company, L.P. Annealed tunneling emitter
US6738336B2 (en) * 2001-05-16 2004-05-18 Hewlett-Packard Development Company, L.P. Data storage device
US6440820B1 (en) 2001-05-21 2002-08-27 Hewlett Packard Company Process flow for ARS mover using selenidation wafer bonding after processing a media side of a rotor wafer
US6621096B2 (en) * 2001-05-21 2003-09-16 Hewlett-Packard Develpoment Company, L.P. Device isolation process flow for ARS system
US6436794B1 (en) 2001-05-21 2002-08-20 Hewlett-Packard Company Process flow for ARS mover using selenidation wafer bonding before processing a media side of a rotor wafer
US6970413B2 (en) * 2001-05-25 2005-11-29 Hewlett-Packard Development Company, L.P. Data storage medium utilizing directed light beam and near-field optical sources
US7082095B2 (en) * 2001-05-25 2006-07-25 Hewlett-Packard Development Company, L.P. System and method for storing data
US6975575B2 (en) * 2001-10-31 2005-12-13 Hewlett-Packard Development Company, L.P. Data storage media and methods utilizing a layer adjacent the storage layer
US6576318B2 (en) 2001-06-05 2003-06-10 Hewlett-Packard Development Company, L.P. Method to fabricate smooth-surfaced crystalline phase-change layer for atomic resolution storage device
US6686642B2 (en) 2001-06-11 2004-02-03 Hewlett-Packard Development Company, L.P. Multi-level integrated circuit for wide-gap substrate bonding
US6648710B2 (en) 2001-06-12 2003-11-18 Hewlett-Packard Development Company, L.P. Method for low-temperature sharpening of silicon-based field emitter tips
US6448100B1 (en) 2001-06-12 2002-09-10 Hewlett-Packard Compnay Method for fabricating self-aligned field emitter tips
US6607415B2 (en) 2001-06-12 2003-08-19 Hewlett-Packard Development Company, L.P. Method for fabricating tiny field emitter tips
US6758711B2 (en) 2001-06-14 2004-07-06 Hewlett-Packard Development Company, L.P. Integrated focusing emitter
US6741016B2 (en) * 2001-06-14 2004-05-25 Hewlett-Packard Development Company, L.P. Focusing lens for electron emitter with shield layer
US6930971B2 (en) * 2001-06-26 2005-08-16 Hewlett-Packard Development Company, L.P. Ultra-high density storage device with electron beam steering
US6928042B2 (en) * 2001-07-06 2005-08-09 Hewlett-Packard Development Company, L.P. Data storage device including nanotube electron sources
DE10133216B4 (de) * 2001-07-09 2005-01-27 Tecpharma Licensing Ag Positionsdetektion
US6700853B2 (en) * 2001-07-20 2004-03-02 Hewlett-Packard Development Company, Lp. Data storage devices with wafer alignment compensation
US6671778B2 (en) * 2001-08-03 2003-12-30 Hewlett-Packard Development Company, L.P. Atomic resolution storage device configured as a redundant array of independent storage devices
US6584416B2 (en) * 2001-08-16 2003-06-24 Hewlett-Packard Development Company System and methods for forming data storage devices
US6822380B2 (en) 2001-10-12 2004-11-23 Hewlett-Packard Development Company, L.P. Field-enhanced MIS/MIM electron emitters
US6577058B2 (en) 2001-10-12 2003-06-10 Hewlett-Packard Development Company, L.P. Injection cold emitter with negative electron affinity based on wide-gap semiconductor structure with controlling base
US6847045B2 (en) 2001-10-12 2005-01-25 Hewlett-Packard Development Company, L.P. High-current avalanche-tunneling and injection-tunneling semiconductor-dielectric-metal stable cold emitter, which emulates the negative electron affinity mechanism of emission
US7102983B2 (en) * 2001-10-30 2006-09-05 Hewlett-Packard Development Company, L.P. Current divider-based storage medium
US20030081532A1 (en) * 2001-10-30 2003-05-01 Gibson Gary A. Supplementary energy sources for atomic resolution storage memory devices
US6558968B1 (en) * 2001-10-31 2003-05-06 Hewlett-Packard Development Company Method of making an emitter with variable density photoresist layer
US7102979B2 (en) * 2001-11-07 2006-09-05 Hewlett-Packard Development Company, Lp. Systems and methods for controlling the voltage on the lens of electron emitter devices
US6990732B2 (en) * 2001-11-29 2006-01-31 Hewlett-Packard Development Company, L.P. Method of manufacturing a micrometer-scaled electronic-charge-transferring device
US6617597B2 (en) * 2001-11-30 2003-09-09 Hewlett-Packard Development Company, L.P. Circuits and methods for electron-beam control
US6806630B2 (en) * 2002-01-09 2004-10-19 Hewlett-Packard Development Company, L.P. Electron emitter device for data storage applications and method of manufacture
US6914374B2 (en) 2002-01-09 2005-07-05 Hewlett-Packard Development Company, L.P. Planar electron emitter apparatus with improved emission area and method of manufacture
US20030222661A1 (en) * 2002-01-11 2003-12-04 Fasen Donald J. Capacitance-based position sensor with integrating demodulator
US6657444B2 (en) 2002-01-11 2003-12-02 Hewlett-Packard Development Company, L.P. Capacitance-based position sensor with integrating demodulator
US6747863B2 (en) 2002-01-11 2004-06-08 Hewlett-Packard Development Company, L.P. Electrostatic drive
US6835947B2 (en) * 2002-01-31 2004-12-28 Hewlett-Packard Development Company, L.P. Emitter and method of making
US6703252B2 (en) * 2002-01-31 2004-03-09 Hewlett-Packard Development Company, L.P. Method of manufacturing an emitter
US6852554B2 (en) 2002-02-27 2005-02-08 Hewlett-Packard Development Company, L.P. Emission layer formed by rapid thermal formation process
DE60309232T2 (de) * 2002-03-05 2007-09-06 Mitsubishi Kagaku Media Co. Ltd. Phasenwechselaufzeichnungsmaterial für ein Informationsaufzeichnungsmedium und ein Informationsaufzeichnungsmedium dieses verwendend
US6822933B2 (en) * 2002-03-28 2004-11-23 Hewlett-Packard Development Company, L.P. High density data storage module
US6925047B2 (en) * 2002-03-28 2005-08-02 Hewlett-Packard Development Company, L.P. High density data storage module
US6787792B2 (en) * 2002-04-18 2004-09-07 Hewlett-Packard Development Company, L.P. Emitter with filled zeolite emission layer
US6996051B2 (en) * 2002-04-29 2006-02-07 Hewlett-Packard Development Company, L.P. Data storage module suspension system having primary and secondary flexures
US7027380B2 (en) * 2002-05-02 2006-04-11 Hewlett-Packard Development Company, L.P. Atomic resolution storage device
US6882019B2 (en) * 2002-05-28 2005-04-19 Hewlett-Packard Development Company, L.P. Movable micro-electromechanical device
US7170223B2 (en) 2002-07-17 2007-01-30 Hewlett-Packard Development Company, L.P. Emitter with dielectric layer having implanted conducting centers
US6922353B2 (en) * 2002-07-29 2005-07-26 Hewlett-Packard Development Company, L.P. Memory for storing information
US20040202291A1 (en) * 2002-08-27 2004-10-14 Skinner Davey Nyle Mobile phone with voice recording transfer function
US7149155B2 (en) * 2002-09-20 2006-12-12 Hewlett-Packard Development Company, L.P. Channeled dielectric re-recordable data storage medium
US6822379B2 (en) * 2002-10-01 2004-11-23 Hewlett-Packard Development Company, L.P. Emission device and method for forming
US7129503B2 (en) * 2002-10-09 2006-10-31 Hewlett-Packard Development Company, L.P. Determining emitter beam size for data storage medium
US6982898B2 (en) * 2002-10-15 2006-01-03 Nanochip, Inc. Molecular memory integrated circuit utilizing non-vibrating cantilevers
US6985377B2 (en) * 2002-10-15 2006-01-10 Nanochip, Inc. Phase change media for high density data storage
US20040150472A1 (en) * 2002-10-15 2004-08-05 Rust Thomas F. Fault tolerant micro-electro mechanical actuators
US7233517B2 (en) 2002-10-15 2007-06-19 Nanochip, Inc. Atomic probes and media for high density data storage
US20040084208A1 (en) * 2002-10-30 2004-05-06 Ives Thomas W. Article and method for reducing external excitation of MEMS devices
US20040086802A1 (en) * 2002-10-31 2004-05-06 Gibson Gary A. Two-dimensional materials and methods for ultra-high density data storage and retrieval
US6961299B2 (en) * 2002-12-05 2005-11-01 Hewlett-Packard Development Company, L.P. Storage device
US6969868B2 (en) * 2002-12-28 2005-11-29 Intel Corporation Method of storing a data bit including melting and cooling a volume of alloy therein
SE526069C2 (sv) * 2003-01-14 2005-06-28 Nilsson Materials Ab System för elektronisk datalagring
US20060184843A1 (en) * 2003-02-14 2006-08-17 Oakley William S Data recording using carbon nanotube electron sources
CN1756667B (zh) * 2003-03-24 2011-06-08 三菱化学媒体股份有限公司 相变记录材料和信息记录介质
US20040213098A1 (en) * 2003-04-25 2004-10-28 Marshall Daniel R. Focus-detecting emitter for a data storage device
US20040213128A1 (en) * 2003-04-25 2004-10-28 Marshall Daniel R. Beam deflector for a data storage device
US20040213129A1 (en) * 2003-04-25 2004-10-28 Marshall Daniel R. Emitter cluster for a data storage device
EP1619037B1 (de) * 2003-04-30 2011-07-06 Mitsubishi Kagaku Media Co., Ltd. Phasenwechselaufzeichnungsmaterial und datenaufzeichnungsmedium
US20040218508A1 (en) * 2003-04-30 2004-11-04 Zhizhang Chen Data cluster erasure
US20040218499A1 (en) * 2003-05-01 2004-11-04 Alison Chaiken Ultra-high density storage and retrieval device using ordered-defect materials and methods of fabrication thereof
WO2004097822A1 (ja) * 2003-05-01 2004-11-11 Pioneer Corporation 記録再生ヘッド及び記録再生装置
US6947311B2 (en) * 2003-06-10 2005-09-20 University Of Basel Two-dimensional structural transition controlled by an electric field, memory storage device thereof, and method of making a memory storage device
US6885582B2 (en) 2003-06-12 2005-04-26 Hewlett-Packard Development Company, L.P. Magnetic memory storage device
US6804137B1 (en) 2003-06-12 2004-10-12 Hewlett-Packard Development Company, L.P. Data storage medium having layers acting as transistor
US6819587B1 (en) 2003-06-12 2004-11-16 Hewlett-Packard Development Company, L.P. Thermal-assisted nanotip magnetic memory storage device
US7161875B2 (en) 2003-06-12 2007-01-09 Hewlett-Packard Development Company, L.P. Thermal-assisted magnetic memory storage device
WO2005067585A2 (en) * 2003-07-03 2005-07-28 William Oakley Adaptive read and read-after-write for carbon nanotube recorders
US6937502B2 (en) * 2003-07-10 2005-08-30 Hewlett-Packard Development Company, L.P. Re-recordable data storage medium utilizing conduction barrier
US6930368B2 (en) * 2003-07-31 2005-08-16 Hewlett-Packard Development Company, L.P. MEMS having a three-wafer structure
US20050044333A1 (en) * 2003-08-19 2005-02-24 Browning James V. Solid-state information storage device
US6872964B2 (en) 2003-08-20 2005-03-29 Hewlett-Packard Development Company, L.P. Data storage device
US6979838B2 (en) * 2003-09-03 2005-12-27 Hewlett-Packard Development Company, L.P. Ultra-high density storage device using phase change diode memory cells and methods of fabrication thereof
US7057202B2 (en) * 2003-09-26 2006-06-06 Hewlett-Packard Development Company, L.P. Ultra-high density storage device using phase change diode memory cells and methods of fabrication thereof
US7052757B2 (en) * 2003-10-03 2006-05-30 Hewlett-Packard Development Company, L.P. Capping layer for enhanced performance media
US20050086471A1 (en) * 2003-10-20 2005-04-21 Spencer Andrew M. Removable information storage device that includes a master encryption key and encryption keys
US6984862B2 (en) * 2003-10-20 2006-01-10 Hewlett-Packard Development Company, L.P. Storage device with charge trapping structure and methods
US7038878B2 (en) * 2003-10-28 2006-05-02 Hewlett-Packard Development Company, L.P. Micromover configured to move a magnetic storage medium in perpendicular directions in a plane
US7239600B2 (en) * 2003-10-30 2007-07-03 Hewlett-Packard Development Company, L.P. Storage device based on phase-change modulated luminescence
US7391706B2 (en) 2003-10-31 2008-06-24 Samsung Electronics Co., Ltd. Data storage device including conductive probe and ferroelectric storage medium
JP4145773B2 (ja) * 2003-11-06 2008-09-03 パイオニア株式会社 情報記録再生装置および記録媒体
US6862206B1 (en) * 2003-12-19 2005-03-01 Hewlett-Packard Development Company, L.P. Memory module hybridizing an atomic resolution storage (ARS) memory and a magnetic memory
US7085151B2 (en) * 2004-01-13 2006-08-01 Hewlett-Packard Development Company, L.P. Storage device having a resistance measurement system
US7152138B2 (en) * 2004-01-30 2006-12-19 Hewlett-Packard Development Company, L.P. System on a chip having a non-volatile imperfect memory
US20050185568A1 (en) * 2004-02-23 2005-08-25 Davidson Robert J. Storage device
WO2005089193A2 (en) * 2004-03-15 2005-09-29 William Oakley Recording medium
JP4184306B2 (ja) 2004-03-18 2008-11-19 パイオニア株式会社 電子放出素子
US7379412B2 (en) 2004-04-16 2008-05-27 Nanochip, Inc. Methods for writing and reading highly resolved domains for high density data storage
WO2005104133A2 (en) * 2004-04-16 2005-11-03 Nanochip, Inc. High density data storage
US20050232061A1 (en) 2004-04-16 2005-10-20 Rust Thomas F Systems for writing and reading highly resolved domains for high density data storage
US7301887B2 (en) 2004-04-16 2007-11-27 Nanochip, Inc. Methods for erasing bit cells in a high density data storage device
US7148485B2 (en) * 2004-05-28 2006-12-12 Hewlett-Packard Development Company, L.P. Low-energy charged particle detector
US7471615B2 (en) * 2004-07-30 2008-12-30 Hewlett-Packard Development Company, L.P. Storage device having information to identify defective storage region
US8578063B2 (en) * 2004-08-20 2013-11-05 Mitsubishi Kagaku Media Co., Ltd. Self-labeling digital storage unit
US7147908B2 (en) 2004-10-13 2006-12-12 Hewlett-Packard Development Company, L.P. Semiconductor package with getter formed over an irregular structure
US7050320B1 (en) * 2004-12-23 2006-05-23 Intel Corporation MEMS probe based memory
US7190539B1 (en) 2004-12-29 2007-03-13 Storage Technology Corporation Magnetic recorder having carbon nanotubes embedded in anodic alumina for emitting electron beams to perform heat-assisted magnetic recording
US7380050B2 (en) * 2005-01-31 2008-05-27 Van Lydegraf Curt N Parallel data storage device
US20060233091A1 (en) * 2005-04-01 2006-10-19 Schut David M Storage device having storage cells having a size less than a write light wavelength
NZ564141A (en) 2005-05-09 2011-02-25 Theranos Inc Two way communication system for monitoring an analyte
US8358572B2 (en) * 2005-06-07 2013-01-22 Samsung Electronics Co., Ltd. Data storage device
US7367119B2 (en) 2005-06-24 2008-05-06 Nanochip, Inc. Method for forming a reinforced tip for a probe storage device
US7463573B2 (en) 2005-06-24 2008-12-09 Nanochip, Inc. Patterned media for a high density data storage device
US20070008863A1 (en) * 2005-07-07 2007-01-11 Corvin Liaw Memory comprising a memory device and a write unit configured as a probe
US7309630B2 (en) 2005-07-08 2007-12-18 Nanochip, Inc. Method for forming patterned media for a high density data storage device
US8525143B2 (en) * 2005-09-06 2013-09-03 Nantero Inc. Method and system of using nanotube fabrics as joule heating elements for memories and other applications
KR100745761B1 (ko) * 2006-02-07 2007-08-02 삼성전자주식회사 다이오드겸용 저항소자를 구비하는 상변화 램과 그 제조 및동작 방법
US11287421B2 (en) 2006-03-24 2022-03-29 Labrador Diagnostics Llc Systems and methods of sample processing and fluid control in a fluidic system
US8007999B2 (en) 2006-05-10 2011-08-30 Theranos, Inc. Real-time detection of influenza virus
US20080023885A1 (en) * 2006-06-15 2008-01-31 Nanochip, Inc. Method for forming a nano-imprint lithography template having very high feature counts
US7808061B2 (en) * 2006-07-28 2010-10-05 Hewlett-Packard Development Company, L.P. Multi-die apparatus including moveable portions
US7903532B2 (en) * 2006-10-11 2011-03-08 Seagate Technology Llc Elevated electrodes for probe position sensing
US7983138B2 (en) * 2006-10-11 2011-07-19 Seagate Technology Llc Surface spacing using rigid spacers
US8012744B2 (en) 2006-10-13 2011-09-06 Theranos, Inc. Reducing optical interference in a fluidic device
US20080113391A1 (en) 2006-11-14 2008-05-15 Ian Gibbons Detection and quantification of analytes in bodily fluids
US7924692B2 (en) * 2007-01-18 2011-04-12 Seagate Technology Llc Actuator assembly providing two-dimensional movement of a moveable element in a data storage device
WO2008126248A1 (ja) * 2007-03-30 2008-10-23 Pioneer Corporation 駆動装置
WO2008126236A1 (ja) * 2007-03-30 2008-10-23 Pioneer Corporation 駆動装置
US7948337B2 (en) * 2007-05-31 2011-05-24 Seagate Technology Llc Simultaneous rotational control using offset linear actuators
US8197650B2 (en) 2007-06-07 2012-06-12 Sensor Innovations, Inc. Silicon electrochemical sensors
US8158430B1 (en) 2007-08-06 2012-04-17 Theranos, Inc. Systems and methods of fluidic sample processing
ES2447875T3 (es) 2007-10-02 2014-03-13 Theranos, Inc. Dispositivos modulares para punto de cuidados y usos de los mismos
EP2491499A4 (de) 2009-10-19 2016-05-18 Theranos Inc Integriertes system zur erfassung und analyse von gesundheitsdaten
US8758584B2 (en) 2010-12-16 2014-06-24 Sensor Innovations, Inc. Electrochemical sensors
MX349288B (es) 2011-01-21 2017-07-21 Theranos Inc Sistemas y metodos para maximizacion de uso de muestras.
US20260018188A1 (en) * 2023-09-25 2026-01-15 University Of Science And Technology Of China Method for storing and acquiring information using fluorescence defects in wide bandgap materials

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2919377A (en) * 1956-03-17 1959-12-29 Electronique & Automatisme Sa Information stores
NL132108C (de) * 1962-07-26
NL297496A (de) * 1962-09-04
US3467951A (en) * 1964-03-18 1969-09-16 Minnesota Mining & Mfg Electron beam recording and readout process for information storage and retrieval
US4213192A (en) * 1979-01-15 1980-07-15 Christensen Alton O Sr Electron beam accessed read-write-erase random access memory
NL184589C (nl) * 1979-07-13 1989-09-01 Philips Nv Halfgeleiderinrichting voor het opwekken van een elektronenbundel en werkwijze voor het vervaardigen van een dergelijke halfgeleiderinrichting.
JPS5738528A (en) * 1980-08-19 1982-03-03 Hamamatsu Tv Kk Multicold electron emission cathode
US4427886A (en) * 1982-08-02 1984-01-24 Wisconsin Alumni Research Foundation Low voltage field emission electron gun
JPS59163506A (ja) * 1983-03-09 1984-09-14 Hitachi Ltd 電子ビ−ム測長装置
US4534016A (en) * 1983-07-08 1985-08-06 The United States Of America As Represented By The Secretary Of The Air Force Beam addressed memory system
US4613519A (en) * 1985-03-18 1986-09-23 The United State Of America As Represented By The United States Department Of Energy Electron-beam-induced information storage in hydrogenated amorphous silicon device
US4760567A (en) * 1986-08-11 1988-07-26 Electron Beam Memories Electron beam memory system with ultra-compact, high current density electron gun
US5270990A (en) * 1986-08-15 1993-12-14 Canon Kabushiki Kaisha Tracking error signal detecting apparatus using an electron beam and apparatus for effecting recording/reproduction of information by the utilization of a plurality of electron beams
JPH0536128A (ja) * 1990-12-20 1993-02-12 Hitachi Ltd 高密度情報記録媒体及びそれを用いた記録装置
US5122663A (en) * 1991-07-24 1992-06-16 International Business Machine Corporation Compact, integrated electron beam imaging system
EP0596242B1 (de) * 1992-11-02 1998-08-26 Motorola, Inc. Helligkeitsmodulierte Kaltkathodeanzeigevorrichtung

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US5557596A (en) 1996-09-17
EP0734017B1 (de) 2001-11-28

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