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DE69612104D1 - Optische filter - Google Patents

Optische filter

Info

Publication number
DE69612104D1
DE69612104D1 DE69612104T DE69612104T DE69612104D1 DE 69612104 D1 DE69612104 D1 DE 69612104D1 DE 69612104 T DE69612104 T DE 69612104T DE 69612104 T DE69612104 T DE 69612104T DE 69612104 D1 DE69612104 D1 DE 69612104D1
Authority
DE
Germany
Prior art keywords
optical filter
filter
optical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69612104T
Other languages
English (en)
Other versions
DE69612104T2 (de
Inventor
Francis Lealman
James Robertson
Makoto Okai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
British Telecommunications PLC
Hitachi Ltd
Original Assignee
British Telecommunications PLC
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by British Telecommunications PLC, Hitachi Ltd filed Critical British Telecommunications PLC
Application granted granted Critical
Publication of DE69612104D1 publication Critical patent/DE69612104D1/de
Publication of DE69612104T2 publication Critical patent/DE69612104T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1028—Coupling to elements in the cavity, e.g. coupling to waveguides adjacent the active region, e.g. forward coupled [DFC] structures
    • H01S5/1032—Coupling to elements comprising an optical axis that is not aligned with the optical axis of the active region
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/12007—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind forming wavelength selective elements, e.g. multiplexer, demultiplexer
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/122—Basic optical elements, e.g. light-guiding paths
    • G02B6/124—Geodesic lenses or integrated gratings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06255—Controlling the frequency of the radiation
    • H01S5/06258—Controlling the frequency of the radiation with DFB-structure
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12083—Constructional arrangements
    • G02B2006/12107—Grating
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12083—Constructional arrangements
    • G02B2006/12109—Filter
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06255—Controlling the frequency of the radiation
    • H01S5/06256—Controlling the frequency of the radiation with DBR-structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1028—Coupling to elements in the cavity, e.g. coupling to waveguides adjacent the active region, e.g. forward coupled [DFC] structures
    • H01S5/1032—Coupling to elements comprising an optical axis that is not aligned with the optical axis of the active region
    • H01S5/1035—Forward coupled structures [DFC]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1206—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers having a non constant or multiplicity of periods
    • H01S5/1209—Sampled grating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1206—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers having a non constant or multiplicity of periods
    • H01S5/1215—Multiplicity of periods
    • H01S5/1218—Multiplicity of periods in superstructured configuration, e.g. more than one period in an alternate sequence
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1225—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers with a varying coupling constant along the optical axis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/124—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers incorporating phase shifts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
    • H01S5/5045—Amplifier structures not provided for in groups H01S5/02 - H01S5/30 the arrangement having a frequency filtering function

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Integrated Circuits (AREA)
DE69612104T 1995-10-06 1996-10-03 Optische filter Expired - Fee Related DE69612104T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP95307107 1995-10-06
PCT/GB1996/002424 WO1997014201A1 (en) 1995-10-06 1996-10-03 Optical filters

Publications (2)

Publication Number Publication Date
DE69612104D1 true DE69612104D1 (de) 2001-04-19
DE69612104T2 DE69612104T2 (de) 2001-09-20

Family

ID=8221354

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69612104T Expired - Fee Related DE69612104T2 (de) 1995-10-06 1996-10-03 Optische filter

Country Status (5)

Country Link
US (1) US5699378A (de)
EP (1) EP0853831B1 (de)
JP (1) JP2000510602A (de)
DE (1) DE69612104T2 (de)
WO (1) WO1997014201A1 (de)

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Publication number Priority date Publication date Assignee Title
US6198863B1 (en) * 1995-10-06 2001-03-06 British Telecommunications Public Limited Company Optical filters
KR100211064B1 (ko) * 1996-12-04 1999-07-15 정선종 비선형 박막을 갖는 광도파로
FR2775355B1 (fr) * 1998-02-26 2000-03-31 Alsthom Cge Alcatel Reflecteur optique en semi-conducteur et procede de fabrication
GB9809583D0 (en) * 1998-05-06 1998-07-01 Marconi Gec Ltd Optical devices
AUPQ300199A0 (en) * 1999-09-21 1999-10-14 University Of Sydney, The A grating design
US6205270B1 (en) 1999-09-23 2001-03-20 Avanex Corporation Dense wavelength division multiplexer which includes a dense optical channel comb filter
US7310363B1 (en) * 1999-09-28 2007-12-18 The Regents Of The University Of California Integrated wavelength tunable single and two-stage all-optical wavelength converter
EP1240733A1 (de) * 1999-12-17 2002-09-18 Corning O.T.I., Inc. Verfahren und vorrichtung zur wellenleiterkopplung eines optischen signals
US6714699B1 (en) 2000-10-19 2004-03-30 Avanex Corporation Multi-wavelength non-laser light source
SE0100611L (sv) * 2001-02-22 2002-08-23 Altitun Ab Förfarande för att förlustkompensera ett avstämbart filter för en laser, jämte ett dylikt filter
FR2821495B1 (fr) * 2001-02-23 2004-08-27 Cit Alcatel Laser accordable de facon rapide et large
US6633716B2 (en) * 2001-05-02 2003-10-14 Motorola, Inc. Optical device and method therefor
JP4770077B2 (ja) * 2001-07-04 2011-09-07 三菱電機株式会社 波長可変半導体レーザおよび光モジュール
US7239442B2 (en) * 2001-07-26 2007-07-03 Japan Science And Technology Agency Optical frequency comb generator
US7653093B2 (en) * 2001-09-10 2010-01-26 Imec Widely tunable twin guide laser structure
US6763165B1 (en) * 2002-01-15 2004-07-13 Adc Telecommunications, Inc. Grating assisted coupler with controlled start
KR100418262B1 (ko) * 2002-05-14 2004-02-14 한국전자통신연구원 다중 모드 간섭형 결합기, 이를 이용한 다층 평면형광도파로 및 그 제조 방법
EP1507153A1 (de) * 2002-05-22 2005-02-16 Showa Electric Wire and Cable Co.,Ltd. Signalausschneideeinrichtung, optischer verbinder und faseroptischer koppler
JP4615184B2 (ja) * 2002-10-07 2011-01-19 古河電気工業株式会社 分布帰還型半導体レーザ素子
JPWO2004011971A1 (ja) * 2002-07-25 2005-11-24 昭和電線電纜株式会社 光フィルタ
US20040071181A1 (en) * 2002-10-15 2004-04-15 Rong Huang Retro-reflective etalon and the devices using the same
FR2848679B1 (fr) * 2002-12-16 2005-04-08 Teem Photonics Composant de filtrage en optique integree comprenant une gaine optique ainsi que son procede de realisation
JP2005303077A (ja) * 2004-04-13 2005-10-27 Fujitsu Ltd 波長可変レーザ装置
JP4648647B2 (ja) * 2004-05-13 2011-03-09 日本電信電話株式会社 波長可変半導体レーザ
JP4657853B2 (ja) * 2005-08-11 2011-03-23 住友電工デバイス・イノベーション株式会社 半導体レーザ、レーザモジュール、光学部品、レーザ装置、半導体レーザの製造方法および半導体レーザの制御方法
US8411711B2 (en) * 2005-12-07 2013-04-02 Innolume Gmbh Semiconductor laser with low relative intensity noise of individual longitudinal modes and optical transmission system incorporating the laser
US7835408B2 (en) * 2005-12-07 2010-11-16 Innolume Gmbh Optical transmission system
JP5267119B2 (ja) * 2008-12-26 2013-08-21 富士通株式会社 光受信装置および波長多重伝送システム
US8908261B2 (en) * 2011-01-26 2014-12-09 Massachusetts Institute Of Technology Device and method for luminescence enhancement by resonant energy transfer from an absorptive thin film

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JPS6454790A (en) * 1987-08-26 1989-03-02 Matsushita Electric Industrial Co Ltd Distributed feedback type semiconductor laser
JP2819557B2 (ja) * 1988-03-18 1998-10-30 富士通株式会社 半導体発光装置
US5305335A (en) * 1989-12-26 1994-04-19 United Technologies Corporation Single longitudinal mode pumped optical waveguide laser arrangement
US5317576A (en) * 1989-12-26 1994-05-31 United Technologies Corporation Continously tunable single-mode rare-earth doped pumped laser arrangement
US5077816A (en) * 1989-12-26 1991-12-31 United Technologies Corporation Fiber embedded grating frequency standard optical communication devices
US5170290A (en) * 1990-05-10 1992-12-08 The United States Of America As Represented By The Secretary Of The Air Force Comb optical interference filter
US5225930A (en) * 1990-05-10 1993-07-06 The United States Of America As Represented By The Secretary Of The Air Force Comb optical interference filter
GB2254183B (en) * 1991-03-27 1995-01-18 Marconi Gec Ltd An amplifier/filter combination
NL9200328A (nl) * 1992-02-21 1993-09-16 Nederland Ptt Optische schakelcomponent.
US5325392A (en) * 1992-03-06 1994-06-28 Nippon Telegraph And Telephone Corporation Distributed reflector and wavelength-tunable semiconductor laser
US5237576A (en) * 1992-05-05 1993-08-17 At&T Bell Laboratories Article comprising an optical fiber laser
CA2101411C (en) * 1992-08-14 2003-06-10 Jean-Pierre Weber Tunable optical filter
US5434876A (en) * 1992-10-23 1995-07-18 At&T Bell Laboratories Article comprising an optical waveguide laser
US5323404A (en) * 1993-11-02 1994-06-21 At&T Bell Laboratories Optical fiber laser or amplifier including high reflectivity gratings
FR2720198B1 (fr) * 1994-05-20 1996-07-19 France Telecom Laser à fibre optique polarisé linéairement.
US5600665A (en) * 1995-07-28 1997-02-04 Hughes Aircraft Company Multiple output fiber laser with passive frequency control and method

Also Published As

Publication number Publication date
US5699378A (en) 1997-12-16
DE69612104T2 (de) 2001-09-20
WO1997014201A1 (en) 1997-04-17
EP0853831B1 (de) 2001-03-14
JP2000510602A (ja) 2000-08-15
EP0853831A1 (de) 1998-07-22

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Legal Events

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8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee