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DE69604114D1 - Gemische von photoaktiven Zusammensetzungen enthaltendes Fotoresist - Google Patents

Gemische von photoaktiven Zusammensetzungen enthaltendes Fotoresist

Info

Publication number
DE69604114D1
DE69604114D1 DE69604114T DE69604114T DE69604114D1 DE 69604114 D1 DE69604114 D1 DE 69604114D1 DE 69604114 T DE69604114 T DE 69604114T DE 69604114 T DE69604114 T DE 69604114T DE 69604114 D1 DE69604114 D1 DE 69604114D1
Authority
DE
Germany
Prior art keywords
mixtures
photoresist containing
photoactive compositions
containing photoactive
compositions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69604114T
Other languages
English (en)
Other versions
DE69604114T2 (de
Inventor
Anthony Zampini
Peter Trefonas
Pamela Turci
Catherine C Meister
Gerald C Vizvary
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shipley Co Inc
Original Assignee
Shipley Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shipley Co Inc filed Critical Shipley Co Inc
Publication of DE69604114D1 publication Critical patent/DE69604114D1/de
Application granted granted Critical
Publication of DE69604114T2 publication Critical patent/DE69604114T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G8/00—Condensation polymers of aldehydes or ketones with phenols only
    • C08G8/28—Chemically modified polycondensates
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G03F7/0236—Condensation products of carbonyl compounds and phenolic compounds, e.g. novolak resins

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Phenolic Resins Or Amino Resins (AREA)
DE69604114T 1995-04-10 1996-03-01 Gemische von photoaktiven Zusammensetzungen enthaltendes Fotoresist Expired - Fee Related DE69604114T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US41909995A 1995-04-10 1995-04-10

Publications (2)

Publication Number Publication Date
DE69604114D1 true DE69604114D1 (de) 1999-10-14
DE69604114T2 DE69604114T2 (de) 2000-03-02

Family

ID=23660783

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69604114T Expired - Fee Related DE69604114T2 (de) 1995-04-10 1996-03-01 Gemische von photoaktiven Zusammensetzungen enthaltendes Fotoresist

Country Status (4)

Country Link
US (1) US5723254A (de)
EP (1) EP0737895B1 (de)
JP (1) JPH08286370A (de)
DE (1) DE69604114T2 (de)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5589553A (en) * 1995-03-29 1996-12-31 Shipley Company, L.L.C. Esterification product of aromatic novolak resin with quinone diazide sulfonyl group
JP3287234B2 (ja) * 1996-09-19 2002-06-04 信越化学工業株式会社 リフトオフ法用ポジ型レジスト組成物及びパターン形成方法
IT1299220B1 (it) * 1998-05-12 2000-02-29 Lastra Spa Composizione sensibile sia a radiazioni ir che a radiazioni uv e lastra litografica
US6177225B1 (en) * 1998-10-01 2001-01-23 Arch Specialty Chemicals, Inc. Photosensitive resin compositions
EP1035438A3 (de) * 1999-03-12 2000-09-20 Shipley Company LLC Phenolharze und diese enthaltende Fotoresistzusammensetzungen
JP2002296772A (ja) * 2001-04-02 2002-10-09 Tokyo Ohka Kogyo Co Ltd ポジ型ホトレジスト組成物
WO2002102867A1 (en) * 2001-06-20 2002-12-27 The Additional Director (Ipr), Defence Research & Development Organisation 'high ortho' novolak copolymers and composition thereof
US6905809B2 (en) * 2003-04-01 2005-06-14 Clariant Finance (Bvi) Limited Photoresist compositions
US6790582B1 (en) * 2003-04-01 2004-09-14 Clariant Finance Bvi Limited Photoresist compositions
US20050033811A1 (en) 2003-08-07 2005-02-10 International Business Machines Corporation Collaborative email
DE102004063416A1 (de) 2004-12-23 2006-07-06 Az Electronic Materials (Germany) Gmbh Verfahren zur Herstellung einer Photoresistlösung
KR101357701B1 (ko) * 2006-02-08 2014-02-05 주식회사 동진쎄미켐 패턴 형성용 네거티브 포토레지스트 조성물 및 이를 이용한 표시장치 패턴 형성 방법
KR101324645B1 (ko) * 2006-05-08 2013-11-01 주식회사 동진쎄미켐 포토레지스트 조성물
KR20080070573A (ko) * 2007-01-26 2008-07-30 롬 앤드 하스 일렉트로닉 머트어리얼즈, 엘.엘.씨. 노볼락 수지 블렌드를 포함하는 포토레지스트
KR101392291B1 (ko) * 2007-04-13 2014-05-07 주식회사 동진쎄미켐 포토레지스트 조성물 및 이를 이용한 박막트랜지스터기판의 제조방법
JP5753074B2 (ja) * 2009-12-28 2015-07-22 株式会社 マイクロプロセス 感光性樹脂組成物、感光性ドライフィルムおよびパターン形成方法
JP5630374B2 (ja) * 2010-06-11 2014-11-26 信越化学工業株式会社 マイクロ構造体の製造方法及び光パターン形成性犠牲膜形成用組成物
US20140242504A1 (en) * 2013-02-22 2014-08-28 Chi Mei Corporation Positive photosensitive resin composition and method for forming patterns by using the same
TWI485520B (zh) * 2013-06-11 2015-05-21 Chi Mei Corp 負型感光性樹脂組成物及其應用
KR20150101511A (ko) * 2014-02-26 2015-09-04 삼성디스플레이 주식회사 포토레지스트 조성물 및 이를 이용한 표시 기판의 제조 방법
TWI711655B (zh) * 2015-12-02 2020-12-01 日商迪愛生股份有限公司 含酚性羥基之樹脂及抗蝕劑膜
WO2017141612A1 (ja) * 2016-02-15 2017-08-24 Jsr株式会社 レジスト下層膜形成用組成物、レジスト下層膜及びパターニングされた基板の製造方法
CN114502659A (zh) * 2019-10-29 2022-05-13 东丽株式会社 树脂组合物、树脂片材、固化膜、固化膜的制造方法、半导体装置、有机el显示装置及显示装置
WO2021131746A1 (ja) * 2019-12-25 2021-07-01 Dic株式会社 ポジ型感光性樹脂組成物、硬化膜、及びレジスト膜
CN113461884B (zh) * 2021-08-04 2022-07-05 浙江自立高分子化工材料有限公司 一种光刻胶用改性酚醛树脂及其制备方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3635709A (en) * 1966-12-15 1972-01-18 Polychrome Corp Light-sensitive lithographic plate
GB1227602A (de) * 1967-11-24 1971-04-07
JPS5619619B2 (de) * 1973-07-27 1981-05-08
US4123279A (en) * 1974-03-25 1978-10-31 Fuji Photo Film Co., Ltd. Light-sensitive o-quinonediazide containing planographic printing plate
JPS561045A (en) * 1979-06-16 1981-01-08 Konishiroku Photo Ind Co Ltd Photosensitive composition
DE3100077A1 (de) * 1981-01-03 1982-08-05 Hoechst Ag, 6000 Frankfurt Lichtempfindliches gemisch, das einen naphthochinondiazidsulfonsaeureester enthaelt, und verfahren zur herstellung des naphthochinondiazidsulfonsaeureesters
US5238776A (en) * 1986-12-23 1993-08-24 Shipley Company Inc. Photoresist composition containing block copolymer resin and positive-working o-quinone diazide or negative-working azide sensitizer compound
US5216111A (en) * 1986-12-23 1993-06-01 Shipley Company Inc. Aromatic novolak resins and blends
US5178986A (en) * 1988-10-17 1993-01-12 Shipley Company Inc. Positive photoresist composition with naphthoquinonediazidesulfonate of oligomeric phenol
JP2761786B2 (ja) * 1990-02-01 1998-06-04 富士写真フイルム株式会社 ポジ型フオトレジスト組成物
JPH03242650A (ja) * 1990-02-20 1991-10-29 Fuji Photo Film Co Ltd ポジ型フオトレジスト組成物
EP0455228B1 (de) * 1990-05-02 1998-08-12 Mitsubishi Chemical Corporation Photolackzusammensetzung
DE4111445A1 (de) * 1991-04-09 1992-10-15 Hoechst Ag Strahlungsempfindliches gemisch mit estern der 1,2-naphthochinon-2-diazid-sulfonsaeure und ein damit hergestelltes strahlungsempfindliches aufzeichnungsmaterial
EP0660186A1 (de) * 1993-12-20 1995-06-28 Mitsubishi Chemical Corporation Lichtempfindliche Harzzusammensetzung und Verfahren zur Bildherstellung damit
US5529880A (en) * 1995-03-29 1996-06-25 Shipley Company, L.L.C. Photoresist with a mixture of a photosensitive esterified resin and an o-naphthoquinone diazide compound

Also Published As

Publication number Publication date
JPH08286370A (ja) 1996-11-01
DE69604114T2 (de) 2000-03-02
EP0737895B1 (de) 1999-09-08
US5723254A (en) 1998-03-03
EP0737895A1 (de) 1996-10-16

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee