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DE69533134D1 - Leistungsbauteil hoher Dichte in MOS-Technologie - Google Patents

Leistungsbauteil hoher Dichte in MOS-Technologie

Info

Publication number
DE69533134D1
DE69533134D1 DE69533134T DE69533134T DE69533134D1 DE 69533134 D1 DE69533134 D1 DE 69533134D1 DE 69533134 T DE69533134 T DE 69533134T DE 69533134 T DE69533134 T DE 69533134T DE 69533134 D1 DE69533134 D1 DE 69533134D1
Authority
DE
Germany
Prior art keywords
power component
mos technology
density power
density
mos
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69533134T
Other languages
English (en)
Other versions
DE69533134T2 (de
Inventor
Angelo Magri
Ferruccio Frisina
Giuseppe Ferla
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
CORIMME Consorzio per Ricerca Sulla Microelettronica nel Mezzogiorno
Original Assignee
STMicroelectronics SRL
CORIMME Consorzio per Ricerca Sulla Microelettronica nel Mezzogiorno
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SRL, CORIMME Consorzio per Ricerca Sulla Microelettronica nel Mezzogiorno filed Critical STMicroelectronics SRL
Publication of DE69533134D1 publication Critical patent/DE69533134D1/de
Application granted granted Critical
Publication of DE69533134T2 publication Critical patent/DE69533134T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H10D62/152—Source regions of DMOS transistors
    • H10D62/155—Shapes 
DE69533134T 1995-10-30 1995-10-30 Leistungsbauteil hoher Dichte in MOS-Technologie Expired - Fee Related DE69533134T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP95830453A EP0772241B1 (de) 1995-10-30 1995-10-30 Leistungsbauteil hoher Dichte in MOS-Technologie

Publications (2)

Publication Number Publication Date
DE69533134D1 true DE69533134D1 (de) 2004-07-15
DE69533134T2 DE69533134T2 (de) 2005-07-07

Family

ID=8222038

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69533134T Expired - Fee Related DE69533134T2 (de) 1995-10-30 1995-10-30 Leistungsbauteil hoher Dichte in MOS-Technologie

Country Status (4)

Country Link
US (3) US6054737A (de)
EP (1) EP0772241B1 (de)
JP (1) JPH09252115A (de)
DE (1) DE69533134T2 (de)

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DE69534919T2 (de) 1995-10-30 2007-01-25 Stmicroelectronics S.R.L., Agrate Brianza Leistungsvorrichtung in MOS-Technologie mit einer einzigen kritischen Größe
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US11217666B2 (en) 2019-09-17 2022-01-04 Infineon Technologies Americas Corp. Method of increasing forward biased safe operating area using different threshold voltage segments
US11728422B2 (en) * 2019-11-14 2023-08-15 Stmicroelectronics S.R.L. Power MOSFET device having improved safe-operating area and on resistance, manufacturing process thereof and operating method thereof
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IT202000015076A1 (it) 2020-06-23 2021-12-23 St Microelectronics Srl Dispositivo elettronico in 4h-sic con prestazioni di corto circuito migliorate, e relativo metodo di fabbricazione

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Also Published As

Publication number Publication date
US6054737A (en) 2000-04-25
DE69533134T2 (de) 2005-07-07
US6030870A (en) 2000-02-29
JPH09252115A (ja) 1997-09-22
US6548864B2 (en) 2003-04-15
US20010012654A1 (en) 2001-08-09
EP0772241A1 (de) 1997-05-07
EP0772241B1 (de) 2004-06-09

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