[go: up one dir, main page]

DE69524684D1 - Photosensor und Verfahren zu dessen Herstellung - Google Patents

Photosensor und Verfahren zu dessen Herstellung

Info

Publication number
DE69524684D1
DE69524684D1 DE69524684T DE69524684T DE69524684D1 DE 69524684 D1 DE69524684 D1 DE 69524684D1 DE 69524684 T DE69524684 T DE 69524684T DE 69524684 T DE69524684 T DE 69524684T DE 69524684 D1 DE69524684 D1 DE 69524684D1
Authority
DE
Germany
Prior art keywords
photosensor
production
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69524684T
Other languages
English (en)
Other versions
DE69524684T2 (de
Inventor
Shinji Takakura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Application granted granted Critical
Publication of DE69524684D1 publication Critical patent/DE69524684D1/de
Publication of DE69524684T2 publication Critical patent/DE69524684T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/107—Integrated devices having multiple elements covered by H10F30/00 in a repetitive configuration, e.g. radiation detectors comprising photodiode arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/221—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/103—Integrated devices the at least one element covered by H10F30/00 having potential barriers, e.g. integrated devices comprising photodiodes or phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00—Subject matter not provided for in other groups of this subclass
DE69524684T 1994-06-30 1995-06-23 Photosensor und Verfahren zu dessen Herstellung Expired - Lifetime DE69524684T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6171838A JPH0818093A (ja) 1994-06-30 1994-06-30 半導体受光素子及び半導体装置並びにそれらの作製方法

Publications (2)

Publication Number Publication Date
DE69524684D1 true DE69524684D1 (de) 2002-01-31
DE69524684T2 DE69524684T2 (de) 2002-08-08

Family

ID=15930700

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69524684T Expired - Lifetime DE69524684T2 (de) 1994-06-30 1995-06-23 Photosensor und Verfahren zu dessen Herstellung

Country Status (7)

Country Link
US (4) US5898209A (de)
EP (1) EP0694974B1 (de)
JP (1) JPH0818093A (de)
KR (1) KR100385306B1 (de)
DE (1) DE69524684T2 (de)
MY (1) MY117089A (de)
SG (2) SG52152A1 (de)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2882354B2 (ja) * 1996-04-30 1999-04-12 日本電気株式会社 受光素子内蔵集積回路装置
JP3170463B2 (ja) * 1996-09-30 2001-05-28 シャープ株式会社 回路内蔵受光素子
JP3918220B2 (ja) * 1997-02-27 2007-05-23 ソニー株式会社 半導体装置及びその製造方法
US5994162A (en) * 1998-02-05 1999-11-30 International Business Machines Corporation Integrated circuit-compatible photo detector device and fabrication process
US6034407A (en) * 1998-07-31 2000-03-07 Boeing North American, Inc. Multi-spectral planar photodiode infrared radiation detector pixels
EP0986110A1 (de) * 1998-09-10 2000-03-15 Electrowatt Technology Innovation AG Lichtempfindliches Halbleiterelement und Verwendung zur Regelung von Flammen
US6118142A (en) * 1998-11-09 2000-09-12 United Microelectronics Corp. CMOS sensor
US6168966B1 (en) * 1999-02-18 2001-01-02 Taiwan Semiconductor Manufacturing Company Fabrication of uniform areal sensitivity image array
JP3317942B2 (ja) * 1999-11-08 2002-08-26 シャープ株式会社 半導体装置およびその製造方法
JP4208172B2 (ja) * 2000-10-31 2009-01-14 シャープ株式会社 フォトダイオードおよびそれを用いた回路内蔵受光素子
US7212240B1 (en) 2001-05-25 2007-05-01 Dalsa, Inc. Imager with a row of photodiodes or pinned photo diodes
US6504196B1 (en) * 2001-08-30 2003-01-07 Micron Technology, Inc. CMOS imager and method of formation
US6960796B2 (en) * 2002-11-26 2005-11-01 Micron Technology, Inc. CMOS imager pixel designs with storage capacitor
KR100685892B1 (ko) * 2005-06-07 2007-02-26 동부일렉트로닉스 주식회사 씨모스 이미지 센서 및 그 제조방법
JP4618064B2 (ja) 2005-09-12 2011-01-26 ソニー株式会社 半導体装置およびその製造方法
US7652313B2 (en) * 2005-11-10 2010-01-26 International Business Machines Corporation Deep trench contact and isolation of buried photodetectors
JP4396684B2 (ja) * 2006-10-04 2010-01-13 ソニー株式会社 固体撮像装置の製造方法
US8908070B2 (en) * 2010-06-18 2014-12-09 Fujifilm Corporation Solid state imaging device and digital camera
FR2969821A1 (fr) * 2010-12-23 2012-06-29 St Microelectronics Sa Dispositif d'imagerie matriciel a photosites a commandes monocoup de transfert de charges
JP6119184B2 (ja) * 2012-10-19 2017-04-26 株式会社ニコン 固体撮像素子、撮像装置および固体撮像素子の製造方法
JP7090620B2 (ja) * 2017-08-09 2022-06-24 株式会社カネカ 光電変換素子および光電変換装置
CN111052402B (zh) 2017-09-13 2023-06-06 株式会社钟化 光电转换元件和光电转换装置
JP7163306B2 (ja) 2017-11-15 2022-10-31 株式会社カネカ 光電変換装置

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3448344A (en) * 1966-03-15 1969-06-03 Westinghouse Electric Corp Mosaic of semiconductor elements interconnected in an xy matrix
JPS51113481A (en) * 1975-03-28 1976-10-06 Sony Corp Semiconductor device
CA1119493A (en) * 1978-07-21 1982-03-09 Mamoru Fujieda Fuel injection system for internal combustion engine
JPS5638697A (en) * 1979-09-05 1981-04-13 Mitsubishi Electric Corp Detector for number of passed articles
DE3167682D1 (en) * 1980-04-22 1985-01-24 Semiconductor Res Found Semiconductor image sensor
EP0048480B1 (de) * 1980-09-19 1985-01-16 Nec Corporation Halbleitender lichtelektrischer Wandler
EP0075192B1 (de) * 1981-09-17 1990-03-14 Kabushiki Kaisha Toshiba Ein optischer Kopf
JPS5963778A (ja) * 1982-10-01 1984-04-11 Hamamatsu Tv Kk シリコンホトダイオ−ド装置およびその製造方法
JPS59108344A (ja) * 1982-12-14 1984-06-22 Olympus Optical Co Ltd 固体撮像素子
US5210434A (en) * 1983-07-02 1993-05-11 Canon Kabushiki Kaisha Photoelectric converter with scanning circuit
JPS6097681A (ja) * 1983-10-31 1985-05-31 Matsushita Electric Works Ltd モノリシツク集積回路
JPS6161457A (ja) * 1984-09-01 1986-03-29 Canon Inc 光センサおよびその製造方法
US5268309A (en) * 1984-09-01 1993-12-07 Canon Kabushiki Kaisha Method for manufacturing a photosensor
JPH0654957B2 (ja) * 1985-11-13 1994-07-20 キヤノン株式会社 光電変換装置
DE3706278A1 (de) * 1986-02-28 1987-09-03 Canon Kk Halbleitervorrichtung und herstellungsverfahren hierfuer
JP2757985B2 (ja) * 1986-10-01 1998-05-25 ソニー株式会社 受光装置とその製造方法
JPS63122267A (ja) * 1986-11-12 1988-05-26 Canon Inc 光センサ
JPS63132455U (de) * 1987-02-20 1988-08-30
JPS63299163A (ja) * 1987-05-28 1988-12-06 Nec Corp 光半導体集積回路
JPH01211966A (ja) * 1988-02-18 1989-08-25 Fujitsu Ltd 固体撮像素子およびその製造方法
JPH01273364A (ja) * 1988-04-25 1989-11-01 Clarion Co Ltd フォトダイオードアレイおよびその製造方法
JPH02187079A (ja) * 1989-01-13 1990-07-23 Sharp Corp ホトダイオード
NL8901400A (nl) * 1989-06-02 1991-01-02 Philips Nv Halfgeleiderinrichting met een stralingsgevoelig element.
US5410175A (en) * 1989-08-31 1995-04-25 Hamamatsu Photonics K.K. Monolithic IC having pin photodiode and an electrically active element accommodated on the same semi-conductor substrate
JPH05145051A (ja) * 1991-11-18 1993-06-11 Sanyo Electric Co Ltd 光半導体装置
JPH05206500A (ja) * 1992-01-28 1993-08-13 Nippondenso Co Ltd 光電変換モジュール

Also Published As

Publication number Publication date
US5898209A (en) 1999-04-27
SG52152A1 (en) 1998-09-28
EP0694974A3 (de) 1996-05-15
MY117089A (en) 2004-05-31
DE69524684T2 (de) 2002-08-08
US5858810A (en) 1999-01-12
US5825071A (en) 1998-10-20
KR100385306B1 (ko) 2003-09-13
US6097074A (en) 2000-08-01
EP0694974B1 (de) 2001-12-19
JPH0818093A (ja) 1996-01-19
SG63728A1 (en) 1999-03-30
KR960002909A (ko) 1996-01-26
EP0694974A2 (de) 1996-01-31

Similar Documents

Publication Publication Date Title
DE69532895D1 (de) Biomaterial und verfahren zu dessen herstellung
DE69811010D1 (de) Photovoltaisches Bauelement und Verfahren zu dessen Herstellung
DE69524684D1 (de) Photosensor und Verfahren zu dessen Herstellung
DE69504892D1 (de) Mischelement und Verfahren zu dessen Herstellung
DE69730259D1 (de) Schichtstoff und Verfahren zu dessen Herstellung
DE69716129D1 (de) Seitlich ausdehnbarer tampon und verfahren zu seiner herstellung
DE19781684T1 (de) Flachkabel und Verfahren zu dessen Herstellung
ATE379971T1 (de) Disinfektionsmittel und verfahren zu dessen herstellung
DE69716546D1 (de) Infrarot-Detektor und Verfahren zu dessen Herstellung
DE59305898D1 (de) Optoelektronisches Bauelement und Verfahren zu dessen Herstellung
DE69720523D1 (de) Polyolefin-polyethylenoxid-mischungen und verfahren zu deren herstellung
DE69711138D1 (de) Feldeffekttransistor und Verfahren zu dessen Herstellung
DE59405248D1 (de) Optokoppler und Verfahren zu dessen Herstellung
DE69519894D1 (de) Photodetektor-Bauelement und Verfahren zu seiner Herstellung
DE59603734D1 (de) Integrales plattenförmiges bauteil und verfahren zu seiner herstellung
DE69603829D1 (de) Schalwandler und verfahren zu dessen herstellung
DE69730404D1 (de) Luftreifen und verfahren zu dessen herstellung
DE69837849D1 (de) Kohlekommutator und verfahren zu dessen herstellung
DE69703993D1 (de) Einbügelbarer Einlagestoff und Verfahren zu dessen Herstellung
DE69608359D1 (de) Hexaazaisowurtzitan-derivate und verfahren zu deren herstellung
DE59608456D1 (de) Photodiode und verfahren zu deren herstellung
DE69625176D1 (de) Camptothecin-derivate und verfahren zu ihrer herstellung
DE69503332D1 (de) Gleitstück und verfahren zu dessen herstellung
DE59401246D1 (de) Ringförmiges Maschinenteil und Verfahren zu dessen Herstellung
EP0801071A4 (de) Lewis-x-derivate und verfahren zu ihrer herstellung

Legal Events

Date Code Title Description
8364 No opposition during term of opposition