DE69512125D1 - Herstellung von Löchern in polymerischen Materialien - Google Patents

Herstellung von Löchern in polymerischen Materialien

Info

Publication number: DE69512125D1
Authority: DE; Germany
Prior art keywords: manufacture; holes; polymeric materials; polymeric; materials
Prior art date: 1994-04-28
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Fee Related

Application number

DE69512125T

Other languages

English (en)

Other versions

DE69512125T2 (de

Inventor

Robert H Havemann

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Texas Instruments Inc

Original Assignee

Texas Instruments Inc

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1994-04-28

Filing date

1995-04-28

Publication date

1999-10-21

1995-04-28 Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc

1999-10-21 Application granted granted Critical

1999-10-21 Publication of DE69512125D1 publication Critical patent/DE69512125D1/de

2000-04-20 Publication of DE69512125T2 publication Critical patent/DE69512125T2/de

2015-04-29 Anticipated expiration legal-status Critical

Status Expired - Fee Related legal-status Critical Current

Classifications

- H10P14/40—
- H10W20/076—
- H10W20/077—
- H10W20/082—
- H10W20/48—
- H10W20/495—

DE69512125T 1994-04-28 1995-04-28 Herstellung von Löchern in polymerischen Materialien Expired - Fee Related DE69512125T2 (de)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
US23409994A	1994-04-28	1994-04-28

Publications (2)

Publication Number	Publication Date
DE69512125D1 true DE69512125D1 (de)	1999-10-21
DE69512125T2 DE69512125T2 (de)	2000-04-20

Family

ID=22879928

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
DE69512125T Expired - Fee Related DE69512125T2 (de)	1994-04-28	1995-04-28	Herstellung von Löchern in polymerischen Materialien

Country Status (6)

Country	Link
US (1)	US6188125B1 (de)
EP (1)	EP0680085B1 (de)
JP (1)	JPH08139194A (de)
KR (1)	KR950034610A (de)
DE (1)	DE69512125T2 (de)
TW (1)	TW271005B (de)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPH09129727A (ja) *	1995-10-30	1997-05-16	Nec Corp	半導体装置及びその製造方法
EP0809291B1 (de) *	1996-03-22	2007-04-04	Texas Instruments Incorporated	Halbleiterschaltung mit dielektrischer Schicht zwischen zwei Metallebenen und Verfahren zur Herstellung
FR2747511B1 (fr) *	1996-04-10	1998-09-04	Sgs Thomson Microelectronics	Interconnexions multicouches a faible capacite parasite laterale
JPH10223624A (ja)	1997-02-06	1998-08-21	Nec Yamagata Ltd	半導体装置の製造方法
JPH10335458A (ja)	1997-05-30	1998-12-18	Nec Corp	半導体装置及びその製造方法
US6294455B1 (en) *	1997-08-20	2001-09-25	Micron Technology, Inc.	Conductive lines, coaxial lines, integrated circuitry, and methods of forming conductive lines, coaxial lines, and integrated circuitry
JP3199006B2 (ja) *	1997-11-18	2001-08-13	日本電気株式会社	層間絶縁膜の形成方法および絶縁膜形成装置
US6197696B1 (en)	1998-03-26	2001-03-06	Matsushita Electric Industrial Co., Ltd.	Method for forming interconnection structure
FR2777697B1 (fr) *	1998-04-16	2000-06-09	St Microelectronics Sa	Circuit integre avec couche d'arret et procede de fabrication associe
US20010029091A1 (en) *	1998-04-17	2001-10-11	U.S. Philips Corporation	Method for manufacturing an electronic device comprising an organic- containing material
JP3102409B2 (ja) *	1998-04-30	2000-10-23	日本電気株式会社	配線の形成方法及びプラズマアッシング装置
US6127263A (en) *	1998-07-10	2000-10-03	Applied Materials, Inc.	Misalignment tolerant techniques for dual damascene fabrication
US6391771B1 (en)	1998-07-23	2002-05-21	Applied Materials, Inc.	Integrated circuit interconnect lines having sidewall layers
TW437040B (en)	1998-08-12	2001-05-28	Applied Materials Inc	Interconnect line formed by dual damascene using dielectric layers having dissimilar etching characteristics
US6071809A (en) *	1998-09-25	2000-06-06	Rockwell Semiconductor Systems, Inc.	Methods for forming high-performing dual-damascene interconnect structures
US6225207B1 (en) *	1998-10-01	2001-05-01	Applied Materials, Inc.	Techniques for triple and quadruple damascene fabrication
US6309801B1 (en)	1998-11-18	2001-10-30	U.S. Philips Corporation	Method of manufacturing an electronic device comprising two layers of organic-containing material
US6258732B1 (en) *	1999-02-04	2001-07-10	International Business Machines Corporation	Method of forming a patterned organic dielectric layer on a substrate
US6770975B2 (en)	1999-06-09	2004-08-03	Alliedsignal Inc.	Integrated circuits with multiple low dielectric-constant inter-metal dielectrics
EP1077475A3 (de) *	1999-08-11	2003-04-02	Applied Materials, Inc.	Verfahren zur Mikrobearbeitung einer Körperhölung mit mehrfachem Profil
DE19961103C2 (de) *	1999-12-17	2002-03-14	Infineon Technologies Ag	Dielektrische Füllung von elektrischen Verdrahtungsebenen und Verfahren zur Herstellung einer elektrischen Verdrahtung
US6720249B1 (en) *	2000-04-17	2004-04-13	International Business Machines Corporation	Protective hardmask for producing interconnect structures
DE10127934A1 (de) *	2001-06-08	2002-12-19	Infineon Technologies Ag	Leiterbahnanordnung und Verfahren zum Herstellen einer gekapselten Leiterbahnkopplung
DE10146146B4 (de) *	2001-09-19	2004-02-05	Infineon Technologies Ag	Verfahren zur elektrischen Isolation nebeneinander liegender metallischer Leiterbahnen und Halbleiterbauelement mit voneinander isolierten metallischen Leiterbahnen
JP3667303B2 (ja)	2002-06-04	2005-07-06	沖電気工業株式会社	多層配線構造部の製造方法
US6878620B2 (en) *	2002-11-12	2005-04-12	Applied Materials, Inc.	Side wall passivation films for damascene cu/low k electronic devices
DE10301243B4 (de)	2003-01-15	2009-04-16	Infineon Technologies Ag	Verfahren zum Herstellen einer integrierten Schaltungsanordnung, insbesondere mit Kondensatoranordnung
US7608538B2 (en) *	2007-01-05	2009-10-27	International Business Machines Corporation	Formation of vertical devices by electroplating
US9505609B2 (en) *	2015-04-29	2016-11-29	Invensense, Inc.	CMOS-MEMS integrated device with selective bond pad protection
DE102019131408B4 (de)	2019-06-28	2025-12-04	Taiwan Semiconductor Manufacturing Company, Ltd.	Verbesserte Kontaktierung von Metallleitungen bei Fehlausrichtung von BEOL-Durchkontaktierungen
CN112151497B (zh)	2019-06-28	2023-08-22	台湾积体电路制造股份有限公司	半导体结构以及形成半导体结构的方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US4523372A (en) *	1984-05-07	1985-06-18	Motorola, Inc.	Process for fabricating semiconductor device
EP0177845A1 (de) *	1984-09-28	1986-04-16	Siemens Aktiengesellschaft	Integrierter Schaltkreis mit Mehrlagenverdrahtung und Verfahren zu seiner Herstellung
JPH01235254A (ja)	1988-03-15	1989-09-20	Nec Corp	半導体装置及びその製造方法
JP2782801B2 (ja) *	1989-06-23	1998-08-06	日本電気株式会社	半導体装置の配線構造
JPH04174541A (ja)	1990-03-28	1992-06-22	Nec Corp	半導体集積回路及びその製造方法
JPH04233732A (ja) *	1990-08-16	1992-08-21	Motorola Inc	半導体の製造工程で使用するスピン・オン誘電体
US5284801A (en) *	1992-07-22	1994-02-08	Vlsi Technology, Inc.	Methods of moisture protection in semiconductor devices utilizing polyimides for inter-metal dielectric
JPH0697299A (ja) *	1992-09-11	1994-04-08	Nec Yamagata Ltd	半導体装置

1995
- 1995-04-26 JP JP7102527A patent/JPH08139194A/ja active Pending
- 1995-04-27 KR KR1019950010066A patent/KR950034610A/ko not_active Abandoned
- 1995-04-28 DE DE69512125T patent/DE69512125T2/de not_active Expired - Fee Related
- 1995-04-28 EP EP95106399A patent/EP0680085B1/de not_active Expired - Lifetime
- 1995-06-07 US US08/476,293 patent/US6188125B1/en not_active Expired - Lifetime
- 1995-06-08 TW TW084105791A patent/TW271005B/zh not_active IP Right Cessation

Also Published As

Publication number	Publication date
DE69512125T2 (de)	2000-04-20
US6188125B1 (en)	2001-02-13
TW271005B (de)	1996-02-21
JPH08139194A (ja)	1996-05-31
KR950034610A (ko)	1995-12-28
EP0680085A1 (de)	1995-11-02
EP0680085B1 (de)	1999-09-15

Publication	Publication Date	Title
DE69512125D1 (de)	1999-10-21	Herstellung von Löchern in polymerischen Materialien
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DE69503139D1 (de)	1998-07-30	Schuhwerk und dessen herstellung
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DE69520208D1 (de)	2001-04-05	Herstellung von nicht-zeolithischen molekularsieben
ATE238342T1 (de)	2003-05-15	Neue thrombin-inhibitoren, deren herstellung und verwendung
DE69505257D1 (de)	1998-11-12	Elektrochemische oxydation von materialien
DE69718818D1 (de)	2003-03-06	Herstellung von kanälen in metallkörpern
DE69827144D1 (de)	2004-11-25	Neue blockpolymere und deren herstellung
DE69414660D1 (de)	1998-12-24	Prozess zur Verminderung von Abfällen bei der Herstellung von Acrylnitril
DE69826752D1 (de)	2004-11-11	Verwendung von Polymerfilme
DE69534043D1 (de)	2005-04-07	Neues, in entzündeten drüsen exprimiertes chemokin, seine herstellung und verwendung
DE69720301D1 (de)	2003-05-08	Herstellung von Silanen
DE59606486D1 (de)	2001-04-05	Herstellung von Poly-o-hydroxyamiden und Poly-o-mercaptoamiden
DE69515140D1 (de)	2000-03-30	Planarisierung in der Herstellung von Anordnungen
DE69508074D1 (de)	1999-04-08	Herstellung von porösen körpern
DE69715054D1 (de)	2002-10-10	Herstellung von Silanen
DE69804513D1 (de)	2002-05-02	Herstellung von zeolith-l
FI953036A0 (fi)	1995-06-20	Elastomeeristen aineiden parannuksia ja niiden uudelleenkäyttö
DE69615469D1 (de)	2001-10-31	Herstellung von Argon
DE69410693D1 (de)	1998-07-09	Schäumbare Materialien, deren Herstellung und Verwendung
DE69510594D1 (de)	1999-08-12	Herstellung von magnetostriktiven Material
ATA56194A (de)	1997-02-15	Verwendung von notoginsenosid r1 zur herstellung von arzneimitteln
DE69502001D1 (de)	1998-05-14	Herstellung von uranoxid

Legal Events

Date	Code	Title	Description
2000-10-05	8364	No opposition during term of opposition
2011-02-17	8339	Ceased/non-payment of the annual fee