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DE69500086D1 - Circuit arrangement for voltage limitation with hysteresis comparator - Google Patents

Circuit arrangement for voltage limitation with hysteresis comparator

Info

Publication number
DE69500086D1
DE69500086D1 DE69500086T DE69500086T DE69500086D1 DE 69500086 D1 DE69500086 D1 DE 69500086D1 DE 69500086 T DE69500086 T DE 69500086T DE 69500086 T DE69500086 T DE 69500086T DE 69500086 D1 DE69500086 D1 DE 69500086D1
Authority
DE
Germany
Prior art keywords
circuit arrangement
hysteresis comparator
voltage limitation
limitation
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69500086T
Other languages
German (de)
Other versions
DE69500086T2 (en
Inventor
Sylvie Drouot
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
STMicroelectronics lnc USA
Original Assignee
SGS Thomson Microelectronics SA
SGS Thomson Microelectronics Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SGS Thomson Microelectronics SA, SGS Thomson Microelectronics Inc filed Critical SGS Thomson Microelectronics SA
Application granted granted Critical
Publication of DE69500086D1 publication Critical patent/DE69500086D1/en
Publication of DE69500086T2 publication Critical patent/DE69500086T2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • G05F3/242—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Dc-Dc Converters (AREA)
  • Measurement Of Current Or Voltage (AREA)
  • Manipulation Of Pulses (AREA)
DE69500086T 1994-04-21 1995-04-14 Circuit arrangement for voltage limitation with hysteresis comparator Expired - Fee Related DE69500086T2 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9404984A FR2719135B1 (en) 1994-04-21 1994-04-21 Voltage limiting circuit with hysteresis comparator.

Publications (2)

Publication Number Publication Date
DE69500086D1 true DE69500086D1 (en) 1997-01-02
DE69500086T2 DE69500086T2 (en) 1997-04-03

Family

ID=9462497

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69500086T Expired - Fee Related DE69500086T2 (en) 1994-04-21 1995-04-14 Circuit arrangement for voltage limitation with hysteresis comparator

Country Status (5)

Country Link
US (2) US5640118A (en)
EP (1) EP0678802B1 (en)
JP (1) JP2994572B2 (en)
DE (1) DE69500086T2 (en)
FR (1) FR2719135B1 (en)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19542823C2 (en) * 1995-11-16 1997-09-04 Sgs Thomson Microelectronics Hysteresis comparator circuit for use in a voltage regulation circuit
JP3738070B2 (en) * 1995-11-29 2006-01-25 株式会社ルネサステクノロジ Semiconductor device
KR100207486B1 (en) * 1996-08-20 1999-07-15 윤종용 Circuit for detecting pad signal for semiconductor memory device
US6118326A (en) * 1997-11-06 2000-09-12 Analog Devices, Inc. Two-phase bootstrapped CMOS switch drive technique and circuit
JP3278765B2 (en) * 1997-11-17 2002-04-30 日本電気株式会社 Negative voltage generation circuit
US6087892A (en) * 1998-06-08 2000-07-11 Sun Microsystems, Inc. Target Ion/Ioff threshold tuning circuit and method
US6172529B1 (en) 1998-09-28 2001-01-09 International Business Machines Corporation Compound domino logic circuit having output noise elimination
KR100307525B1 (en) * 1998-11-26 2001-11-15 김영환 Vbb level detection control circuit
US6396315B1 (en) * 1999-05-03 2002-05-28 Agere Systems Guardian Corp. Voltage clamp for a failsafe buffer
JP3563298B2 (en) * 1999-06-11 2004-09-08 株式会社 沖マイクロデザイン Voltage detection circuit
US6657452B2 (en) * 1999-12-17 2003-12-02 Infineon Technologies Ag Configuration for measurement of internal voltages of an integrated semiconductor apparatus
EP1184962B1 (en) 2000-08-22 2006-05-17 STMicroelectronics S.r.l. High efficiency electronic circuit for generating and regulating a supply voltage
US6803805B2 (en) * 2002-04-09 2004-10-12 International Business Machines Corporation Distributed DC voltage generator for system on chip
FR2878986B1 (en) * 2004-12-08 2007-04-27 Atmel Corp PRINCIPLE OF POWER CONTROL OF HIGH VOLTAGE OUTPUT IN INTEGRATED CIRCUIT DEVICES
TWI277853B (en) * 2005-03-03 2007-04-01 Novatek Microelectronics Corp Method for efficiency enhancement in a charge pump circuit and a charge pump control selector
US8054125B2 (en) * 2009-12-31 2011-11-08 Silicon Laboratories Inc. Charge pump with low power, high voltage protection circuitry
US9141119B2 (en) * 2013-01-16 2015-09-22 Freescale Semiconductor, Inc. Reducing output voltage ripple of power supplies
KR20150014681A (en) * 2013-07-30 2015-02-09 에스케이하이닉스 주식회사 Current generating circuit and semiconductor device having the same and memory system having the same
US10498303B2 (en) 2018-02-02 2019-12-03 Analog Devices, Inc. Signal level detection and overrange signal limiter and clamp for electronic circuits
JP7416087B2 (en) * 2019-12-03 2024-01-17 富士電機株式会社 Comparison circuit, semiconductor device

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3962591A (en) * 1974-12-23 1976-06-08 The United States Of America As Represented By The Secretary Of The Army Voltage doubler circuit
JPS57199335A (en) * 1981-06-02 1982-12-07 Toshiba Corp Generating circuit for substrate bias
US4687954A (en) * 1984-03-06 1987-08-18 Kabushiki Kaisha Toshiba CMOS hysteresis circuit with enable switch or natural transistor
IT1227430B (en) * 1988-07-22 1991-04-11 Sgs Thomson Microelectronics INDUCTANCE AND CAPACITY CHARGE PUMP CIRCUIT FOR PILOTING POWER MOS TRANSISTOR BRIDGES.
JPH02215154A (en) * 1989-02-16 1990-08-28 Toshiba Corp Voltage control circuit
US4980526A (en) * 1989-04-06 1990-12-25 Hamlin Incorporated Device and method for testing acceleration shock sensors
JPH0833420B2 (en) * 1989-04-28 1996-03-29 日本電気株式会社 Voltage detection circuit
KR920006991A (en) * 1990-09-25 1992-04-28 김광호 High Voltage Generation Circuit of Semiconductor Memory Device
FR2681180B1 (en) * 1991-09-05 1996-10-25 Gemplus Card Int PROGRAMMING VOLTAGE REGULATION CIRCUIT FOR PROGRAMMABLE MEMORIES.
US5258662A (en) * 1992-04-06 1993-11-02 Linear Technology Corp. Micropower gate charge pump for power MOSFETS
JP3096545B2 (en) * 1992-11-12 2000-10-10 松下電器産業株式会社 Level detection circuit and boost power supply generation circuit using the same

Also Published As

Publication number Publication date
EP0678802A1 (en) 1995-10-25
US5640118A (en) 1997-06-17
US5796285A (en) 1998-08-18
JP2994572B2 (en) 1999-12-27
DE69500086T2 (en) 1997-04-03
FR2719135B1 (en) 1996-06-28
JPH088697A (en) 1996-01-12
FR2719135A1 (en) 1995-10-27
EP0678802B1 (en) 1996-11-20

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee