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DE68923203D1 - Ladungsgekoppelte Anordnung. - Google Patents

Ladungsgekoppelte Anordnung.

Info

Publication number
DE68923203D1
DE68923203D1 DE68923203T DE68923203T DE68923203D1 DE 68923203 D1 DE68923203 D1 DE 68923203D1 DE 68923203 T DE68923203 T DE 68923203T DE 68923203 T DE68923203 T DE 68923203T DE 68923203 D1 DE68923203 D1 DE 68923203D1
Authority
DE
Germany
Prior art keywords
charge coupled
coupled arrangement
arrangement
charge
coupled
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE68923203T
Other languages
English (en)
Other versions
DE68923203T2 (de
Inventor
Albert Joseph Pierr Theuwissen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electronics NV filed Critical Philips Electronics NV
Application granted granted Critical
Publication of DE68923203D1 publication Critical patent/DE68923203D1/de
Publication of DE68923203T2 publication Critical patent/DE68923203T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10Integrated devices
    • H10F39/12Image sensors
    • H10F39/15Charge-coupled device [CCD] image sensors
    • H10F39/153Two-dimensional or three-dimensional array CCD image sensors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10Integrated devices
    • H10F39/12Image sensors
    • H10F39/15Charge-coupled device [CCD] image sensors
    • H10F39/153Two-dimensional or three-dimensional array CCD image sensors
    • H10F39/1536Frame transfer
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70SSIS architectures; Circuits associated therewith
    • H04N25/71Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/713Transfer or readout registers; Split readout registers or multiple readout registers
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70SSIS architectures; Circuits associated therewith
    • H04N25/71Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/72Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors using frame transfer [FT]

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
DE68923203T 1988-03-15 1989-03-09 Ladungsgekoppelte Anordnung. Expired - Fee Related DE68923203T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL8800627A NL8800627A (nl) 1988-03-15 1988-03-15 Ladingsgekoppelde inrichting.

Publications (2)

Publication Number Publication Date
DE68923203D1 true DE68923203D1 (de) 1995-08-03
DE68923203T2 DE68923203T2 (de) 1996-02-01

Family

ID=19851932

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68923203T Expired - Fee Related DE68923203T2 (de) 1988-03-15 1989-03-09 Ladungsgekoppelte Anordnung.

Country Status (7)

Country Link
US (1) US5164807A (de)
EP (1) EP0333260B1 (de)
JP (1) JPH029138A (de)
KR (1) KR890015427A (de)
CN (1) CN1027412C (de)
DE (1) DE68923203T2 (de)
NL (1) NL8800627A (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5206530A (en) * 1989-05-02 1993-04-27 Sony Corporation Charge transfer device having multiple registers
JPH03114236A (ja) * 1989-09-28 1991-05-15 Sony Corp 電荷転送装置
US4949183A (en) * 1989-11-29 1990-08-14 Eastman Kodak Company Image sensor having multiple horizontal shift registers
JP2697246B2 (ja) * 1990-05-14 1998-01-14 日本電気株式会社 固体撮像素子
US5196719A (en) * 1990-05-14 1993-03-23 Nec Corporation Solid-state image pick-up device having electric field for accelerating electric charges from photoelectric converting region to shift register
US5650644A (en) * 1990-05-16 1997-07-22 Matsushita Electric Industrial Co., Ltd. Charge transfer device having a plurality of vertical and horizontal charge-coupled devices with improved configurations for isolation regions and impurity implanted regions between the charge-coupled devices
JP2949861B2 (ja) * 1991-01-18 1999-09-20 日本電気株式会社 Ccdリニアイメージセンサ
JP3146526B2 (ja) * 1991-07-09 2001-03-19 ソニー株式会社 Ccd撮像素子
US5220184A (en) * 1992-05-29 1993-06-15 Eastman Kodak Company Multiple array linear CCD imager
FR2704978B1 (fr) * 1993-05-07 1995-06-09 Thomson Csf Semiconducteurs Dispositif à transfert de charges à grille d'étraînement.
JP3002365B2 (ja) * 1993-09-16 2000-01-24 シャープ株式会社 電荷転送装置及びその駆動方法
JPH09246519A (ja) * 1996-03-14 1997-09-19 Sony Corp 固体撮像装置およびその駆動方法
JP2004518296A (ja) 2001-01-23 2004-06-17 ダルサ、コーポレーション 電荷結合デバイス
JP2007115912A (ja) * 2005-10-20 2007-05-10 Matsushita Electric Ind Co Ltd 固体撮像装置及びその製造方法
US7692706B2 (en) * 2006-07-20 2010-04-06 Eastman Kodak Company Charge summing in multiple output charge-coupled devices in an image sensor

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3971003A (en) * 1974-11-18 1976-07-20 Rca Corporation Charge coupled device imager
DE2842285C2 (de) * 1978-09-28 1980-09-18 Siemens Ag, 1000 Berlin Und 8000 Muenchen Ladungsverschiebespeicher in Seriell-Parallel-Seriell-Organisation
DE2912801A1 (de) * 1979-03-30 1980-10-09 Siemens Ag Monolithisch integrierte filterschaltung
DE2939518A1 (de) * 1979-09-28 1981-04-16 Siemens AG, 1000 Berlin und 8000 München Monolithisch integrierte schaltung zur zeilenweisen bildabtastung
US4376897A (en) * 1980-06-25 1983-03-15 International Business Machines Corp. Low voltage serial to parallel to serial charge coupled device
JPS58190169A (ja) * 1982-04-30 1983-11-07 Toshiba Corp 固体撮像装置
JPS58210662A (ja) * 1982-05-31 1983-12-07 Fujitsu Ltd 電荷転送装置
JPS5934658A (ja) * 1982-08-20 1984-02-25 Hitachi Ltd 固体撮像素子
US4513313A (en) * 1982-12-07 1985-04-23 Canon Kabushiki Kaisha Solid state imaging device
GB8314300D0 (en) * 1983-05-24 1983-06-29 Gen Electric Co Plc Image sensors
JPS60163459A (ja) * 1984-02-06 1985-08-26 Hitachi Ltd 固体撮像素子
JPS60187054A (ja) * 1984-03-06 1985-09-24 Matsushita Electronics Corp 電荷転送装置およびその駆動方法
FR2564674B1 (fr) * 1984-05-18 1986-09-19 Thomson Csf Barrette multilineaire a transfert de charge et procede d'analyse
JPH0697670B2 (ja) * 1984-07-31 1994-11-30 株式会社東芝 電荷量演算装置
US4658278A (en) * 1985-04-15 1987-04-14 Rca Corporation High density charge-coupled device imager and method of making the same
US4807037A (en) * 1987-03-06 1989-02-21 Kabushiki Kaisha Toshiba Low noise CCD image sensor having a plurality of horizontal CCD registers
US4862235A (en) * 1988-06-30 1989-08-29 Tektronix, Inc. Electrode structure for a corner turn in a series-parallel-series charge coupled device

Also Published As

Publication number Publication date
US5164807A (en) 1992-11-17
CN1037236A (zh) 1989-11-15
EP0333260A1 (de) 1989-09-20
CN1027412C (zh) 1995-01-11
KR890015427A (ko) 1989-10-30
EP0333260B1 (de) 1995-06-28
DE68923203T2 (de) 1996-02-01
JPH029138A (ja) 1990-01-12
NL8800627A (nl) 1989-10-02

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee