DE68920365D1 - Verfahren zur Polierung eines Halbleiter-Plättchens. - Google Patents

Verfahren zur Polierung eines Halbleiter-Plättchens.

Info

Publication number: DE68920365D1
Authority: DE; Germany
Prior art keywords: polishing; semiconductor wafer; wafer; semiconductor
Prior art date: 1988-06-28
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Lifetime

Application number

DE68920365T

Other languages

English (en)

Other versions

DE68920365T2 (de

Inventor

Yuichi Saito

Shinsuke Sakai

Hisao Hayashi

Takeshi Matsushita

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Mitsubishi Materials Silicon Corp

Sony Corp

Original Assignee

Mitsubishi Materials Silicon Corp

Sony Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1988-06-28

Filing date

1989-06-16

Publication date

1995-02-16

1988-06-28 Priority claimed from JP63160310A external-priority patent/JP2758406B2/ja

1988-07-19 Priority claimed from JP63180010A external-priority patent/JPH0228925A/ja

1989-06-16 Application filed by Mitsubishi Materials Silicon Corp, Sony Corp filed Critical Mitsubishi Materials Silicon Corp

1995-02-16 Publication of DE68920365D1 publication Critical patent/DE68920365D1/de

1995-06-08 Application granted granted Critical

1995-06-08 Publication of DE68920365T2 publication Critical patent/DE68920365T2/de

2009-06-17 Anticipated expiration legal-status Critical

Status Expired - Lifetime legal-status Critical Current

Classifications

- H10P52/00—
- H10P52/403—
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
- H10P90/129—
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/051—Etching
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/831—Of specified ceramic or electrically insulating compositions
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/84—Manufacture, treatment, or detection of nanostructure
- Y10S977/888—Shaping or removal of materials, e.g. etching

Landscapes

Engineering & Computer Science (AREA)
Mechanical Engineering (AREA)
Mechanical Treatment Of Semiconductor (AREA)

DE68920365T 1988-06-28 1989-06-16 Verfahren zur Polierung eines Halbleiter-Plättchens. Expired - Lifetime DE68920365T2 (de)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
JP63160310A JP2758406B2 (ja)	1988-06-28	1988-06-28	ウェーハの製造方法
JP63180010A JPH0228925A (ja)	1988-07-19	1988-07-19	ウェーハの製造方法

Publications (2)

Publication Number	Publication Date
DE68920365D1 true DE68920365D1 (de)	1995-02-16
DE68920365T2 DE68920365T2 (de)	1995-06-08

Family

ID=26486854

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
DE68920365T Expired - Lifetime DE68920365T2 (de)	1988-06-28	1989-06-16	Verfahren zur Polierung eines Halbleiter-Plättchens.

Country Status (4)

Country	Link
US (1)	US5096854A (de)
EP (1)	EP0348757B1 (de)
KR (1)	KR0145300B1 (de)
DE (1)	DE68920365T2 (de)

Families Citing this family (41)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPH046875A (ja) *	1990-04-24	1992-01-10	Mitsubishi Materials Corp	シリコンウェーハ
US5157877A (en) *	1990-04-27	1992-10-27	Shin-Etsu Handotai Co., Ltd.	Method for preparing a semiconductor wafer
JPH0710493Y2 (ja) *	1991-02-05	1995-03-08	株式会社エンヤシステム	ウエーハ貼付板
US5169491A (en) *	1991-07-29	1992-12-08	Micron Technology, Inc.	Method of etching SiO2 dielectric layers using chemical mechanical polishing techniques
JP3141486B2 (ja) *	1992-01-27	2001-03-05	ソニー株式会社	半導体装置
JP3187109B2 (ja) *	1992-01-31	2001-07-11	キヤノン株式会社	半導体部材およびその製造方法
US5366924A (en) *	1992-03-16	1994-11-22	At&T Bell Laboratories	Method of manufacturing an integrated circuit including planarizing a wafer
US5445996A (en) *	1992-05-26	1995-08-29	Kabushiki Kaisha Toshiba	Method for planarizing a semiconductor device having a amorphous layer
MY114512A (en)	1992-08-19	2002-11-30	Rodel Inc	Polymeric substrate with polymeric microelements
JPH0669515A (ja) *	1992-08-19	1994-03-11	Fujitsu Ltd	半導体記憶装置
JP2839801B2 (ja) *	1992-09-18	1998-12-16	三菱マテリアル株式会社	ウェーハの製造方法
US5264395A (en) *	1992-12-16	1993-11-23	International Business Machines Corporation	Thin SOI layer for fully depleted field effect transistors
EP0606758B1 (de) *	1992-12-30	2000-09-06	Samsung Electronics Co., Ltd.	Verfahren zur Herstellung einer SOI-Transistor-DRAM
US5318927A (en) *	1993-04-29	1994-06-07	Micron Semiconductor, Inc.	Methods of chemical-mechanical polishing insulating inorganic metal oxide materials
TW367551B (en) *	1993-06-17	1999-08-21	Freescale Semiconductor Inc	Polishing pad and a process for polishing
US5659192A (en) *	1993-06-30	1997-08-19	Honeywell Inc.	SOI substrate fabrication
BE1007281A3 (nl) *	1993-07-12	1995-05-09	Philips Electronics Nv	Werkwijze voor het polijsten van een oppervlak van koper of een in hoofdzaak koper bevattende legering, magneetkop vervaardigbaar met gebruikmaking van de werkwijze, röntgenstralingcollimerend element en röntgenstralingreflecterend element, beide voorzien van een volgens de werkwijze gepolijst oppervlak en polijstmiddel geschikt voor toepassing in de werkwijze.
US5733175A (en)	1994-04-25	1998-03-31	Leach; Michael A.	Polishing a workpiece using equal velocity at all points overlapping a polisher
US5783497A (en) *	1994-08-02	1998-07-21	Sematech, Inc.	Forced-flow wafer polisher
US5562530A (en) *	1994-08-02	1996-10-08	Sematech, Inc.	Pulsed-force chemical mechanical polishing
US5607341A (en)	1994-08-08	1997-03-04	Leach; Michael A.	Method and structure for polishing a wafer during manufacture of integrated circuits
JPH08276356A (ja) *	1995-04-10	1996-10-22	Honda Motor Co Ltd	セラミックスの加工方法及び加工装置
US6110820A (en) *	1995-06-07	2000-08-29	Micron Technology, Inc.	Low scratch density chemical mechanical planarization process
US6238590B1 (en) *	1996-03-13	2001-05-29	Trustees Of Stevens Institute Of Technology	Tribochemical polishing of ceramics and metals
US5890951A (en) *	1996-04-15	1999-04-06	Lsi Logic Corporation	Utility wafer for chemical-mechanical planarization
US5769691A (en) *	1996-06-14	1998-06-23	Speedfam Corp	Methods and apparatus for the chemical mechanical planarization of electronic devices
US6514875B1 (en)	1997-04-28	2003-02-04	The Regents Of The University Of California	Chemical method for producing smooth surfaces on silicon wafers
US6224465B1 (en) *	1997-06-26	2001-05-01	Stuart L. Meyer	Methods and apparatus for chemical mechanical planarization using a microreplicated surface
US6390890B1 (en)	1999-02-06	2002-05-21	Charles J Molnar	Finishing semiconductor wafers with a fixed abrasive finishing element
WO2000030159A1 (en) *	1998-11-18	2000-05-25	Rodel Holdings, Inc.	Method to decrease dishing rate during cmp in metal semiconductor structures
US6641463B1 (en)	1999-02-06	2003-11-04	Beaver Creek Concepts Inc	Finishing components and elements
US6162702A (en) *	1999-06-17	2000-12-19	Intersil Corporation	Self-supported ultra thin silicon wafer process
US6435952B1 (en)	2000-06-30	2002-08-20	Lam Research Corporation	Apparatus and method for qualifying a chemical mechanical planarization process
US8512580B2 (en) *	2001-09-21	2013-08-20	Lg Display Co., Ltd.	Method of fabricating thin liquid crystal display device
TWI228768B (en) *	2002-08-08	2005-03-01	Jsr Corp	Processing method of polishing pad for semiconductor wafer and polishing pad for semiconductor wafer
DE10243104A1 (de) *	2002-09-17	2004-03-25	Gebr. Brasseler Gmbh & Co. Kg	Rotierendes Instrument aus Keramik
US7422634B2 (en) *	2005-04-07	2008-09-09	Cree, Inc.	Three inch silicon carbide wafer with low warp, bow, and TTV
KR100746622B1 (ko) *	2006-06-29	2007-08-08	주식회사 하이닉스반도체	모스 트랜지스터 제조방법
JP5215773B2 (ja) *	2008-08-18	2013-06-19	株式会社ディスコ	加工方法
CN109273586A (zh) *	2018-08-17	2019-01-25	福建晶安光电有限公司	一种压电晶片及其制作方法
CN112548845B (zh) *	2021-02-19	2021-09-14	清华大学	一种基板加工方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US3342652A (en) *	1964-04-02	1967-09-19	Ibm	Chemical polishing of a semi-conductor substrate
FR2063961A1 (en) *	1969-10-13	1971-07-16	Radiotechnique Compelec	Mechanico-chemical grinder for semi-con-ducting panels
US3740900A (en) *	1970-07-01	1973-06-26	Signetics Corp	Vacuum chuck assembly for semiconductor manufacture
US3841031A (en) *	1970-10-21	1974-10-15	Monsanto Co	Process for polishing thin elements
DE2247067C3 (de) *	1972-09-26	1979-08-09	Wacker-Chemitronic Gesellschaft Fuer Elektronik-Grundstoffe Mbh, 8263 Burghausen	Verwendung einer Poliersuspension zum schleierfreien Polieren von Halbleiteroberflächen
JPS5218956B2 (de) *	1973-02-20	1977-05-25
US4598053A (en) *	1974-05-23	1986-07-01	Sumitomo Electric Industries, Ltd.	Ceramic compacts
US4057939A (en) *	1975-12-05	1977-11-15	International Business Machines Corporation	Silicon wafer polishing
JPS58114849A (ja) *	1981-12-28	1983-07-08	Fujitsu Ltd	研磨装置
JPS5944185B2 (ja) *	1982-03-04	1984-10-27	不二越機械工業株式会社	ポリシング用セラミツク定盤の固定装置
DE3517665A1 (de) *	1985-05-15	1986-11-20	Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen	Verfahren zum polieren von siliciumscheiben

1989
- 1989-06-16 EP EP89110984A patent/EP0348757B1/de not_active Expired - Lifetime
- 1989-06-16 DE DE68920365T patent/DE68920365T2/de not_active Expired - Lifetime
- 1989-06-19 US US07/367,637 patent/US5096854A/en not_active Expired - Fee Related
- 1989-06-27 KR KR1019890008887A patent/KR0145300B1/ko not_active Expired - Lifetime

Also Published As

Publication number	Publication date
KR900000994A (ko)	1990-01-31
US5096854A (en)	1992-03-17
KR0145300B1 (ko)	1998-08-17
EP0348757B1 (de)	1995-01-04
EP0348757A3 (en)	1990-03-07
DE68920365T2 (de)	1995-06-08
EP0348757A2 (de)	1990-01-03

Publication	Publication Date	Title
DE68920365D1 (de)	1995-02-16	Verfahren zur Polierung eines Halbleiter-Plättchens.
DE3887477D1 (de)	1994-03-10	Verfahren zur Obenflächenbehandlung eines Halbleiterplättchens.
DE3750169D1 (de)	1994-08-11	Verfahren zum Ebnen eines Halbleitersubstrates.
DE3853397D1 (de)	1995-04-27	Verfahren zum schleierfreien Polieren von Halbleiterscheiben.
DE3853778D1 (de)	1995-06-14	Verfahren zur Herstellung eines Halbleiterbauelements.
DE68914479D1 (de)	1994-05-19	Randbelichtungsverfahren für Halbleiterscheiben.
DE3583183D1 (de)	1991-07-18	Verfahren zur herstellung eines halbleitersubstrates.
DE69225248D1 (de)	1998-06-04	Verfahren zum Verarbeiten eines Halbleitersubstrats
DE69308482D1 (de)	1997-04-10	Vorrichtung zum Polieren von Halbleiterscheiben
DE3685970D1 (de)	1992-08-20	Verfahren zum herstellen eines halbleiterbauelements.
DE69212450D1 (de)	1996-08-29	Vorrichtung zum Polieren der Schrägkanten eines Wafers
DE3788155D1 (de)	1993-12-23	Verfahren zum Entfernen von überschüssigem Material auf einer Halbleiterscheibe.
DE69022087D1 (de)	1995-10-12	Verfahren zum Herstellen einer Halbleiteranordnung.
DE3855324D1 (de)	1996-07-04	Vorrichtung zum Positionieren eines Wafers
DE3483444D1 (de)	1990-11-29	Verfahren zur herstellung eines halbleiterbauelementes.
DE3750325D1 (de)	1994-09-08	Verfahren zum Herstellen eines Halbleiterbauelements.
DE68917995D1 (de)	1994-10-13	Verfahren zum Herstellen einer Halbleitervorrichtung.
DE59009414D1 (de)	1995-08-24	Verfahren zur Herstellung eines Laserwafers.
DE69106311D1 (de)	1995-02-09	Automatische Vorrichtung zum Läppen von Wafern.
DE68919561D1 (de)	1995-01-12	Verfahren zur Oberflächenpassivierung eines zusammengesetzten Halbleiters.
DE69322835D1 (de)	1999-02-11	Einrichtung zur Halterung eines Halbleiterplättchens
DE69108689D1 (de)	1995-05-11	Vorrichtung zum Reinigen von Siliciumscheiben.
DE69519460D1 (de)	2000-12-28	Verfahren zur Reinigung eines Halbleiter-Wafers
DE58907710D1 (de)	1994-06-30	Verfahren zur Konservierung der Oberfläche von Siliciumscheiben.
DE69023956D1 (de)	1996-01-18	Verfahren zur Herstellung eines III-V-Verbindungshalbleiterbauelementes.

Legal Events

Date	Code	Title	Description
1996-02-08	8364	No opposition during term of opposition