DE68912677D1 - Elektronischer Sensor. - Google Patents

Elektronischer Sensor.

Info

Publication number: DE68912677D1
Authority: DE; Germany
Prior art keywords: electronic sensor; electronic; sensor
Prior art date: 1988-08-03
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Fee Related

Application number

DE89307862T

Other languages

English (en)

Other versions

DE68912677T2 (de

Inventor

Barbara Lynn Jones

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

De Beers Industrial Diamond Division Pty Ltd

Original Assignee

De Beers Industrial Diamond Division Pty Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1988-08-03

Filing date

1989-08-02

Publication date

1994-03-10

1989-08-02 Application filed by De Beers Industrial Diamond Division Pty Ltd filed Critical De Beers Industrial Diamond Division Pty Ltd

1994-03-10 Publication of DE68912677D1 publication Critical patent/DE68912677D1/de

1994-05-19 Application granted granted Critical

1994-05-19 Publication of DE68912677T2 publication Critical patent/DE68912677T2/de

2009-08-03 Anticipated expiration legal-status Critical

Status Expired - Fee Related legal-status Critical Current

Classifications

- G—PHYSICS
- G01—MEASURING; TESTING
- G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
- G01Q60/00—Particular types of SPM [Scanning Probe Microscopy] or microscopes; Essential components thereof
- G01Q60/10—STM [Scanning Tunnelling Microscopy] or apparatus therefor, e.g. STM probes
- G01Q60/16—Probes, their manufacture, or their related instrumentation, e.g. holders
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y35/00—Methods or apparatus for measurement or analysis of nanostructures
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/06—Measuring leads; Measuring probes
- G01R1/067—Measuring probes
- G01R1/06711—Probe needles; Cantilever beams; "Bump" contacts; Replaceable probe pins
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/84—Manufacture, treatment, or detection of nanostructure
- Y10S977/849—Manufacture, treatment, or detection of nanostructure with scanning probe
- Y10S977/86—Scanning probe structure
- Y10S977/875—Scanning probe structure with tip detail
- Y10S977/879—Material

Landscapes

General Physics & Mathematics (AREA)
Physics & Mathematics (AREA)
Chemical & Material Sciences (AREA)
Engineering & Computer Science (AREA)
Nanotechnology (AREA)
Radiology & Medical Imaging (AREA)
General Health & Medical Sciences (AREA)
Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
Health & Medical Sciences (AREA)
Analytical Chemistry (AREA)
Crystallography & Structural Chemistry (AREA)
Crystals, And After-Treatments Of Crystals (AREA)
Chemical Vapour Deposition (AREA)
Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
Testing Or Measuring Of Semiconductors Or The Like (AREA)
Measuring Leads Or Probes (AREA)
Electron Sources, Ion Sources (AREA)

DE68912677T 1988-08-03 1989-08-02 Elektronischer Sensor. Expired - Fee Related DE68912677T2 (de)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
GB888818445A GB8818445D0 (en)	1988-08-03	1988-08-03	Stm probe

Publications (2)

Publication Number	Publication Date
DE68912677D1 true DE68912677D1 (de)	1994-03-10
DE68912677T2 DE68912677T2 (de)	1994-05-19

Family

ID=10641548

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
DE68912677T Expired - Fee Related DE68912677T2 (de)	1988-08-03	1989-08-02	Elektronischer Sensor.

Country Status (6)

Country	Link
US (1)	US4943720A (de)
EP (1)	EP0354020B1 (de)
JP (1)	JPH02186203A (de)
DE (1)	DE68912677T2 (de)
GB (1)	GB8818445D0 (de)
ZA (1)	ZA895860B (de)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP2814256B2 (ja) *	1989-01-31	1998-10-22	セイコーインスツルメンツ株式会社	電気化学測定トンネル電流同時測定装置およびトンネル探針
EP0437275B1 (de) *	1990-01-11	1997-08-27	Canon Kabushiki Kaisha	Mikrosonde, Herstellungsverfahren zur Herstellung derselben und Informations-Eingabe- und/oder Ausgabe-Gerät welches dieselbe verwendet
GB9009675D0 (en) *	1990-04-30	1990-06-20	De Beers Ind Diamond	Probes
US5134364A (en) *	1990-06-19	1992-07-28	Prime Computer, Inc.	Elastomeric test probe
US5585734A (en) *	1990-07-09	1996-12-17	Interuniversitair Micro Elektronica Centrum Vzw	Method for determining the resistance and carrier profile of a semiconductor element using a scanning proximity microscope
JP2501945B2 (ja) *	1990-08-28	1996-05-29	三菱電機株式会社	原子間力顕微鏡のカンチレバ―及びその製造方法
US5164595A (en) *	1990-09-10	1992-11-17	North Carolina State University	Scanning tunneling microscope tips
US5171992A (en) *	1990-10-31	1992-12-15	International Business Machines Corporation	Nanometer scale probe for an atomic force microscope, and method for making same
NL9101169A (nl) *	1991-07-05	1993-02-01	Drukker Int Bv	Elektronische tastnaald en werkwijze voor het vervaardigen ervan.
US5283501A (en) *	1991-07-18	1994-02-01	Motorola, Inc.	Electron device employing a low/negative electron affinity electron source
JP2917674B2 (ja) *	1992-06-03	1999-07-12	松下電器産業株式会社	走査トンネル顕微鏡用探針およびその製造方法
US5619092A (en) *	1993-02-01	1997-04-08	Motorola	Enhanced electron emitter
US5383354A (en) *	1993-12-27	1995-01-24	Motorola, Inc.	Process for measuring surface topography using atomic force microscopy
US6091248A (en) *	1994-08-29	2000-07-18	Imec Vzw	Method for measuring the electrical potential in a semiconductor element
NL9401390A (nl) *	1994-08-29	1996-04-01	K U Leuven Research & Dev Vzw	Werkwijze en inrichting voor het meten van de ladingsdragerverdeling in een halfgeleiderelement.
US5723981A (en) *	1994-08-29	1998-03-03	Imec Vzw	Method for measuring the electrical potential in a semiconductor element
US5763879A (en) *	1996-09-16	1998-06-09	Pacific Western Systems	Diamond probe tip
DE19718478C2 (de) *	1997-04-30	2003-05-28	Allice Mestechnik Gmbh	Hochimpedanzsonde mit extrem kleiner Eingangskapazität
US5936243A (en) *	1997-06-09	1999-08-10	Ian Hardcastle	Conductive micro-probe and memory device
DE19752202C1 (de) *	1997-11-25	1999-04-15	Hans Dr Hofsaes	Herstellungsverfahren für eine mikromechanische Vorrichtung
US6020747A (en) *	1998-01-26	2000-02-01	Bahns; John T.	Electrical contact probe
DE19825404C2 (de) *	1998-06-06	2001-09-13	Bernd Irmer	Rastersondenmikroskop mit Sondeneinrichtung, Sondeneinrichtung sowie Verfahren zum Herstellen einer Sondeneinrichtung
US20030078499A1 (en) *	1999-08-12	2003-04-24	Eppstein Jonathan A.	Microporation of tissue for delivery of bioactive agents
US6974452B1 (en)	2000-01-12	2005-12-13	Clinicon Corporation	Cutting and cauterizing surgical tools
DE10003836C2 (de) *	2000-01-28	2002-04-25	Fraunhofer Ges Forschung	Indentor und Verwendung desselben
DE10201491C1 (de) *	2002-01-16	2003-08-28	Gfd Ges Fuer Diamantprodukte M	Meßspitzensystem und Verfahren zu dessen Herstellung
JP2008128650A (ja) *	2006-11-16	2008-06-05	Kyushu Institute Of Technology	プローブカード用接触子及びその製造方法
US8701211B2 (en) *	2009-08-26	2014-04-15	Advanced Diamond Technologies, Inc.	Method to reduce wedge effects in molded trigonal tips
US9880198B2 (en) *	2013-02-11	2018-01-30	Lenovo Enterprise Solutions (Singapore) Pte. Ltd.	High bandwidth signal probe tip
CN105092324B (zh) *	2014-05-07	2018-03-20	中芯国际集成电路制造(上海)有限公司	一种FinFET鳍片掺杂浓度分布的测量方法和测量样品制备方法
WO2018022154A2 (en)	2016-04-25	2018-02-01	Stc. Unm	Rugged, single crystal wide-band-gap-material-scanning-tunneling microscopy/lithography tips

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS5930709A (ja) *	1982-08-13	1984-02-18	Toa Nenryo Kogyo Kk	炭素膜及び／又は炭素粒子の製造方法
DE3572030D1 (en) *	1985-03-07	1989-09-07	Ibm	Scanning tunneling microscope

1988
- 1988-08-03 GB GB888818445A patent/GB8818445D0/en active Pending
1989
- 1989-08-01 ZA ZA895860A patent/ZA895860B/xx unknown
- 1989-08-02 DE DE68912677T patent/DE68912677T2/de not_active Expired - Fee Related
- 1989-08-02 US US07/389,056 patent/US4943720A/en not_active Expired - Fee Related
- 1989-08-02 EP EP89307862A patent/EP0354020B1/de not_active Expired - Lifetime
- 1989-08-03 JP JP1202248A patent/JPH02186203A/ja active Pending

Also Published As

Publication number	Publication date
EP0354020A2 (de)	1990-02-07
GB8818445D0 (en)	1988-09-07
EP0354020A3 (en)	1990-05-30
US4943720A (en)	1990-07-24
DE68912677T2 (de)	1994-05-19
ZA895860B (en)	1990-05-30
EP0354020B1 (de)	1994-01-26
JPH02186203A (ja)	1990-07-20

Publication	Publication Date	Title
DE68912677D1 (de)	1994-03-10	Elektronischer Sensor.
DE3885451D1 (de)	1993-12-09	Elektronisches Post-Folgesystem.
DE58902396D1 (de)	1992-11-12	Positionsgeber.
DE3861518D1 (de)	1991-02-14	Messaufnehmer.
IT1229936B (it)	1991-09-16	Emporio elettronico.
FI881017A7 (fi)	1988-09-07	Elektroniskt doerrlaos.
DE3887310D1 (de)	1994-03-03	Messwertaufnehmer.
FI881497A0 (fi)	1988-03-30	Snabbt hybridisationsbestaemningsfoerfarande i vilket anvaends lateximmobiliserad sensor.
DE58906413D1 (de)	1994-01-27	Taktiler Sensor.
DE3879662D1 (de)	1993-04-29	Schwingungsfuehler.
DE68910633D1 (de)	1993-12-16	Zweidrahtmessaufnehmer.
DE58908005D1 (de)	1994-08-11	Elektronisches Steuergerät.
DE58905737D1 (de)	1993-11-04	Beschleunigungssensor.
FI882697L (fi)	1989-12-09	Integrerad uppvaermbar sensor.
DE68910080D1 (de)	1993-11-25	Sensoreinrichtung.
NO890673D0 (no)	1989-02-17	Boelgeleder-sensor.
NO892999L (no)	1990-05-18	Sensor.
DE59106968D1 (de)	1996-01-11	Sensorschaltung.
DE58909167D1 (de)	1995-05-11	Elektronisches gerät.
DE68917700D1 (de)	1994-09-29	Beschleunigungssensor.
DE58908801D1 (de)	1995-02-02	Bildsensor.
DE69007002D1 (de)	1994-04-07	Rolamit-Messaufnehmer.
DE68914215D1 (de)	1994-05-05	Positionssensor.
DE58905914D1 (de)	1993-11-18	Elektronisches gerät.
DK364189D0 (da)	1989-07-24	Sensor

Legal Events

Date	Code	Title	Description
1995-03-02	8364	No opposition during term of opposition
1998-08-13	8339	Ceased/non-payment of the annual fee