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DE60329344D1 - Verfahren und Vorrichtung zum Herstellen von Metall-Schichten - Google Patents

Verfahren und Vorrichtung zum Herstellen von Metall-Schichten

Info

Publication number
DE60329344D1
DE60329344D1 DE60329344T DE60329344T DE60329344D1 DE 60329344 D1 DE60329344 D1 DE 60329344D1 DE 60329344 T DE60329344 T DE 60329344T DE 60329344 T DE60329344 T DE 60329344T DE 60329344 D1 DE60329344 D1 DE 60329344D1
Authority
DE
Germany
Prior art keywords
metal layers
producing metal
producing
layers
metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60329344T
Other languages
English (en)
Inventor
Hitoshi Sakamoto
Naoki Yahata
Toshihiko Nishimori
Yoshiyuki Ooba
Hiroshi Tonegawa
Ikumasa Koshiro
Yuzuru Ogura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Anelva Corp
Original Assignee
Canon Anelva Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2002063064A external-priority patent/JP3653053B2/ja
Priority claimed from JP2002229413A external-priority patent/JP3716235B2/ja
Application filed by Canon Anelva Corp filed Critical Canon Anelva Corp
Application granted granted Critical
Publication of DE60329344D1 publication Critical patent/DE60329344D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • H01J37/321Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/08Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal halides
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/08Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal halides
    • C23C16/14Deposition of only one other metal element
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4488Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by in situ generation of reactive gas by chemical or electrochemical reaction
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357Generation remote from the workpiece, e.g. down-stream
    • H10P14/43
    • H10W20/057
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32Processing objects by plasma generation
    • H01J2237/33Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332Coating
    • H01J2237/3322Problems associated with coating
    • H01J2237/3326Problems associated with coating high speed

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Electrochemistry (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
DE60329344T 2002-03-08 2003-03-04 Verfahren und Vorrichtung zum Herstellen von Metall-Schichten Expired - Lifetime DE60329344D1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2002063063 2002-03-08
JP2002063064A JP3653053B2 (ja) 2002-03-08 2002-03-08 配線構造並びにその形成方法及び装置
JP2002229413A JP3716235B2 (ja) 2002-03-08 2002-08-07 金属膜作製方法及び金属膜作製装置

Publications (1)

Publication Number Publication Date
DE60329344D1 true DE60329344D1 (de) 2009-11-05

Family

ID=27767766

Family Applications (2)

Application Number Title Priority Date Filing Date
DE60329344T Expired - Lifetime DE60329344D1 (de) 2002-03-08 2003-03-04 Verfahren und Vorrichtung zum Herstellen von Metall-Schichten
DE60329292T Expired - Lifetime DE60329292D1 (de) 2002-03-08 2003-03-04 Verfahren und Vorrichtung zum Herstellen von Metall-Schichten

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE60329292T Expired - Lifetime DE60329292D1 (de) 2002-03-08 2003-03-04 Verfahren und Vorrichtung zum Herstellen von Metall-Schichten

Country Status (5)

Country Link
US (6) US7208421B2 (de)
EP (6) EP1512771A1 (de)
KR (1) KR100527219B1 (de)
DE (2) DE60329344D1 (de)
TW (1) TWI225663B (de)

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US8057508B2 (en) * 2004-07-28 2011-11-15 Ethicon Endo-Surgery, Inc. Surgical instrument incorporating an electrically actuated articulation locking mechanism
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US20100062602A1 (en) * 2005-04-28 2010-03-11 Phyzchemix Corporation Etching method, method for producing dielectric film of low dielectric constant, method for producing porous member, etching system and thin film forming equipment
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KR101307111B1 (ko) * 2010-08-24 2013-09-11 닛신 이온기기 가부시기가이샤 플라즈마 발생 장치
KR101721931B1 (ko) * 2015-09-30 2017-04-03 (주)아이작리서치 원자층 증착 장치 및 원자층 증착 방법
CN110797245B (zh) * 2019-10-28 2022-11-25 北京北方华创微电子装备有限公司 一种半导体加工设备
JP7112768B2 (ja) * 2020-12-23 2022-08-04 株式会社クリエイティブコーティングス 金属膜のald装置
JP7039085B1 (ja) * 2021-08-30 2022-03-22 株式会社クリエイティブコーティングス 成膜装置
US20240168371A1 (en) * 2022-11-22 2024-05-23 Taiwan Semiconductor Manufacturing Company, Ltd. Selective hardmask on hardmask

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Also Published As

Publication number Publication date
EP1344842A3 (de) 2004-03-10
US7262500B2 (en) 2007-08-28
EP1512769B1 (de) 2009-09-16
EP1344842B1 (de) 2009-09-23
US20040029384A1 (en) 2004-02-12
KR20030074325A (ko) 2003-09-19
KR100527219B1 (ko) 2005-11-08
US20050217579A1 (en) 2005-10-06
EP1344842A2 (de) 2003-09-17
EP1512771A1 (de) 2005-03-09
US20100040802A1 (en) 2010-02-18
TW200308002A (en) 2003-12-16
US20090311866A1 (en) 2009-12-17
TWI225663B (en) 2004-12-21
EP1512770B1 (de) 2012-04-25
US7208421B2 (en) 2007-04-24
EP2050839A3 (de) 2009-05-13
EP2050839A2 (de) 2009-04-22
US20050230830A1 (en) 2005-10-20
US7923374B2 (en) 2011-04-12
EP1512770A1 (de) 2005-03-09
US20090233442A1 (en) 2009-09-17
EP1512772A1 (de) 2005-03-09
DE60329292D1 (de) 2009-10-29
EP1512769A1 (de) 2005-03-09

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