DE60329344D1 - Verfahren und Vorrichtung zum Herstellen von Metall-Schichten - Google Patents
Verfahren und Vorrichtung zum Herstellen von Metall-SchichtenInfo
- Publication number
- DE60329344D1 DE60329344D1 DE60329344T DE60329344T DE60329344D1 DE 60329344 D1 DE60329344 D1 DE 60329344D1 DE 60329344 T DE60329344 T DE 60329344T DE 60329344 T DE60329344 T DE 60329344T DE 60329344 D1 DE60329344 D1 DE 60329344D1
- Authority
- DE
- Germany
- Prior art keywords
- metal layers
- producing metal
- producing
- layers
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/08—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal halides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/08—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal halides
- C23C16/14—Deposition of only one other metal element
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4488—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by in situ generation of reactive gas by chemical or electrochemical reaction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32357—Generation remote from the workpiece, e.g. down-stream
-
- H10P14/43—
-
- H10W20/057—
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/332—Coating
- H01J2237/3322—Problems associated with coating
- H01J2237/3326—Problems associated with coating high speed
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Electrochemistry (AREA)
- Electrodes Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002063063 | 2002-03-08 | ||
| JP2002063064A JP3653053B2 (ja) | 2002-03-08 | 2002-03-08 | 配線構造並びにその形成方法及び装置 |
| JP2002229413A JP3716235B2 (ja) | 2002-03-08 | 2002-08-07 | 金属膜作製方法及び金属膜作製装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE60329344D1 true DE60329344D1 (de) | 2009-11-05 |
Family
ID=27767766
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE60329344T Expired - Lifetime DE60329344D1 (de) | 2002-03-08 | 2003-03-04 | Verfahren und Vorrichtung zum Herstellen von Metall-Schichten |
| DE60329292T Expired - Lifetime DE60329292D1 (de) | 2002-03-08 | 2003-03-04 | Verfahren und Vorrichtung zum Herstellen von Metall-Schichten |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE60329292T Expired - Lifetime DE60329292D1 (de) | 2002-03-08 | 2003-03-04 | Verfahren und Vorrichtung zum Herstellen von Metall-Schichten |
Country Status (5)
| Country | Link |
|---|---|
| US (6) | US7208421B2 (de) |
| EP (6) | EP1512771A1 (de) |
| KR (1) | KR100527219B1 (de) |
| DE (2) | DE60329344D1 (de) |
| TW (1) | TWI225663B (de) |
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7659209B2 (en) | 2001-11-14 | 2010-02-09 | Canon Anelva Corporation | Barrier metal film production method |
| US20030091739A1 (en) * | 2001-11-14 | 2003-05-15 | Hitoshi Sakamoto | Barrier metal film production apparatus, barrier metal film production method, metal film production method, and metal film production apparatus |
| US8905977B2 (en) | 2004-07-28 | 2014-12-09 | Ethicon Endo-Surgery, Inc. | Surgical stapling instrument having an electroactive polymer actuated medical substance dispenser |
| US8057508B2 (en) * | 2004-07-28 | 2011-11-15 | Ethicon Endo-Surgery, Inc. | Surgical instrument incorporating an electrically actuated articulation locking mechanism |
| DE112006001571A5 (de) * | 2005-04-11 | 2008-03-27 | Dr. Laure Plasmatechnologie Gmbh | Vorrichtung und Verfahren zur Plasmabeschichtung |
| US20100062602A1 (en) * | 2005-04-28 | 2010-03-11 | Phyzchemix Corporation | Etching method, method for producing dielectric film of low dielectric constant, method for producing porous member, etching system and thin film forming equipment |
| JP4852261B2 (ja) * | 2005-05-17 | 2012-01-11 | キヤノンアネルバ株式会社 | シリコン化合物の形成方法 |
| JP4401338B2 (ja) * | 2005-09-06 | 2010-01-20 | キヤノンアネルバ株式会社 | 薄膜作製装置及び薄膜作製方法 |
| JP4401340B2 (ja) * | 2005-09-14 | 2010-01-20 | キヤノンアネルバ株式会社 | 薄膜作製装置及び薄膜作製方法 |
| US8187484B2 (en) | 2005-10-05 | 2012-05-29 | Pva Tepla Ag | Down-stream plasma etching with deflectable radical stream |
| US7603963B2 (en) * | 2006-05-02 | 2009-10-20 | Babcock & Wilcox Technical Services Y-12, Llc | Controlled zone microwave plasma system |
| ATE509507T1 (de) * | 2007-02-26 | 2011-05-15 | Laure Plasmatechnologie Gmbh Dr | Vorrichtung und ein verfahren zur plasmagestützten beschichtung und oberflächenbehandlung grossvolumiger bauteile |
| US9157152B2 (en) * | 2007-03-29 | 2015-10-13 | Tokyo Electron Limited | Vapor deposition system |
| JP4723678B2 (ja) | 2008-02-15 | 2011-07-13 | キヤノンアネルバ株式会社 | 金属埋め込み方法及び凹部に金属を堆積させるための装置 |
| KR101307111B1 (ko) * | 2010-08-24 | 2013-09-11 | 닛신 이온기기 가부시기가이샤 | 플라즈마 발생 장치 |
| KR101721931B1 (ko) * | 2015-09-30 | 2017-04-03 | (주)아이작리서치 | 원자층 증착 장치 및 원자층 증착 방법 |
| CN110797245B (zh) * | 2019-10-28 | 2022-11-25 | 北京北方华创微电子装备有限公司 | 一种半导体加工设备 |
| JP7112768B2 (ja) * | 2020-12-23 | 2022-08-04 | 株式会社クリエイティブコーティングス | 金属膜のald装置 |
| JP7039085B1 (ja) * | 2021-08-30 | 2022-03-22 | 株式会社クリエイティブコーティングス | 成膜装置 |
| US20240168371A1 (en) * | 2022-11-22 | 2024-05-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Selective hardmask on hardmask |
Family Cites Families (41)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4851295A (en) * | 1984-03-16 | 1989-07-25 | Genus, Inc. | Low resistivity tungsten silicon composite film |
| EP0322466A1 (de) * | 1987-12-24 | 1989-07-05 | Ibm Deutschland Gmbh | PECVD-(plasmaverstärkte chemische Dampfabscheidung) Verfahren zum Abscheiden von Wolframschichten oder Wolfram enthaltenden Schichten mit In situ-Erzeugung von Wolframfluorid |
| US4895576A (en) * | 1988-04-15 | 1990-01-23 | Westinghouse Electric Corp. | Method of doping interconnections for electrochemical cells |
| US5059292A (en) * | 1989-02-28 | 1991-10-22 | Collins George J | Single-chamber apparatus for in-situ generation of dangerous polyatomic gases and radicals from a source material contained within a porous foamed structure |
| JPH0383335A (ja) * | 1989-08-28 | 1991-04-09 | Hitachi Ltd | エッチング方法 |
| JP2856782B2 (ja) * | 1989-10-12 | 1999-02-10 | レール・リキード・ソシエテ・アノニム・プール・レテユード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード | 低温cvdによる銅薄膜の形成方法 |
| FR2668829B1 (fr) * | 1990-11-05 | 1993-10-22 | Commissariat Energie Atomique | Dispositif et procede de controle non destructif a acquisition simultanee de donnees radiographiques et de donnees tomographiques. |
| US5561082A (en) * | 1992-07-31 | 1996-10-01 | Kabushiki Kaisha Toshiba | Method for forming an electrode and/or wiring layer by reducing copper oxide or silver oxide |
| JPH0741948A (ja) * | 1993-07-30 | 1995-02-10 | Sony Corp | 配線形成方法 |
| US5571366A (en) * | 1993-10-20 | 1996-11-05 | Tokyo Electron Limited | Plasma processing apparatus |
| US5522934A (en) * | 1994-04-26 | 1996-06-04 | Tokyo Electron Limited | Plasma processing apparatus using vertical gas inlets one on top of another |
| JPH0922896A (ja) * | 1995-07-07 | 1997-01-21 | Toshiba Corp | 金属膜の選択的形成方法 |
| US6130482A (en) * | 1995-09-26 | 2000-10-10 | Fujitsu Limited | Semiconductor device and method for fabricating the same |
| US5772771A (en) * | 1995-12-13 | 1998-06-30 | Applied Materials, Inc. | Deposition chamber for improved deposition thickness uniformity |
| TW473857B (en) * | 1996-04-26 | 2002-01-21 | Hitachi Ltd | Method of manufacturing semiconductor device |
| US6070551A (en) * | 1996-05-13 | 2000-06-06 | Applied Materials, Inc. | Deposition chamber and method for depositing low dielectric constant films |
| EP0808915A3 (de) * | 1996-05-23 | 1998-08-05 | Applied Materials, Inc. | Verfahren und Vorrichtung zur chemischen Gasphasenabscheidung und zum Sputtern |
| US5827408A (en) * | 1996-07-26 | 1998-10-27 | Applied Materials, Inc | Method and apparatus for improving the conformality of sputter deposited films |
| US6001420A (en) * | 1996-09-23 | 1999-12-14 | Applied Materials, Inc. | Semi-selective chemical vapor deposition |
| JP3003607B2 (ja) * | 1997-01-20 | 2000-01-31 | 日本電気株式会社 | バリア膜の形成方法と半導体装置 |
| US6280563B1 (en) * | 1997-12-31 | 2001-08-28 | Lam Research Corporation | Plasma device including a powered non-magnetic metal member between a plasma AC excitation source and the plasma |
| US6352049B1 (en) * | 1998-02-09 | 2002-03-05 | Applied Materials, Inc. | Plasma assisted processing chamber with separate control of species density |
| US6143078A (en) * | 1998-11-13 | 2000-11-07 | Applied Materials, Inc. | Gas distribution system for a CVD processing chamber |
| US6291341B1 (en) * | 1999-02-12 | 2001-09-18 | Micron Technology, Inc. | Method for PECVD deposition of selected material films |
| JP3459372B2 (ja) * | 1999-03-18 | 2003-10-20 | 株式会社神戸製鋼所 | 配線膜の形成方法 |
| JP2000306884A (ja) * | 1999-04-22 | 2000-11-02 | Mitsubishi Electric Corp | プラズマ処理装置およびプラズマ処理方法 |
| JP3562628B2 (ja) * | 1999-06-24 | 2004-09-08 | 日本電気株式会社 | 拡散バリア膜、多層配線構造、およびそれらの製造方法 |
| US6046108A (en) * | 1999-06-25 | 2000-04-04 | Taiwan Semiconductor Manufacturing Company | Method for selective growth of Cu3 Ge or Cu5 Si for passivation of damascene copper structures and device manufactured thereby |
| KR100458779B1 (ko) * | 2000-03-27 | 2004-12-03 | 미츠비시 쥬고교 가부시키가이샤 | 금속막의 제작방법 및 그 제작장치 |
| US6436838B1 (en) * | 2000-04-21 | 2002-08-20 | Applied Materials, Inc. | Method of patterning lead zirconium titanate and barium strontium titanate |
| US20020185226A1 (en) * | 2000-08-10 | 2002-12-12 | Lea Leslie Michael | Plasma processing apparatus |
| KR100386612B1 (ko) * | 2000-08-17 | 2003-06-02 | 주식회사 하이닉스반도체 | 반도체소자의 커패시터 제조방법 |
| US6514844B1 (en) * | 2001-04-23 | 2003-02-04 | Advanced Micro Devices, Inc. | Sidewall treatment for low dielectric constant (low K) materials by ion implantation |
| JP3680029B2 (ja) * | 2001-08-08 | 2005-08-10 | 三菱重工業株式会社 | 金属薄膜の気相成長方法およびその気相成長装置 |
| JP2005512312A (ja) * | 2001-10-11 | 2005-04-28 | エピオン コーポレイション | 相互接続バイアを改善するためのgcib処理および改善された相互接続バイア |
| US20030091739A1 (en) * | 2001-11-14 | 2003-05-15 | Hitoshi Sakamoto | Barrier metal film production apparatus, barrier metal film production method, metal film production method, and metal film production apparatus |
| JP3727878B2 (ja) * | 2001-11-14 | 2005-12-21 | 三菱重工業株式会社 | 金属膜作製装置 |
| US6537896B1 (en) * | 2001-12-04 | 2003-03-25 | Lsi Logic Corporation | Process for treating porous low k dielectric material in damascene structure to form a non-porous dielectric diffusion barrier on etched via and trench surfaces in the porous low k dielectric material |
| US20030145790A1 (en) * | 2002-02-05 | 2003-08-07 | Hitoshi Sakamoto | Metal film production apparatus and metal film production method |
| TW569184B (en) * | 2002-03-04 | 2004-01-01 | Asustek Comp Inc | Write/record speed adjustment method of data recording device |
| US7169704B2 (en) * | 2002-06-21 | 2007-01-30 | Samsung Electronics Co., Ltd. | Method of cleaning a surface of a water in connection with forming a barrier layer of a semiconductor device |
-
2003
- 2003-03-04 EP EP04026952A patent/EP1512771A1/de not_active Withdrawn
- 2003-03-04 DE DE60329344T patent/DE60329344D1/de not_active Expired - Lifetime
- 2003-03-04 EP EP03004812A patent/EP1344842B1/de not_active Expired - Lifetime
- 2003-03-04 EP EP04026953A patent/EP1512772A1/de not_active Withdrawn
- 2003-03-04 EP EP04026950A patent/EP1512769B1/de not_active Expired - Lifetime
- 2003-03-04 DE DE60329292T patent/DE60329292D1/de not_active Expired - Lifetime
- 2003-03-04 EP EP04026951A patent/EP1512770B1/de not_active Expired - Lifetime
- 2003-03-04 EP EP08020773A patent/EP2050839A3/de not_active Withdrawn
- 2003-03-05 TW TW092104656A patent/TWI225663B/zh not_active IP Right Cessation
- 2003-03-07 US US10/384,932 patent/US7208421B2/en not_active Expired - Fee Related
- 2003-03-08 KR KR10-2003-0014636A patent/KR100527219B1/ko not_active Expired - Fee Related
-
2005
- 2005-05-19 US US11/132,222 patent/US20050217579A1/en not_active Abandoned
- 2005-05-19 US US11/132,223 patent/US7262500B2/en not_active Expired - Fee Related
-
2009
- 2009-05-26 US US12/471,743 patent/US7923374B2/en not_active Expired - Fee Related
- 2009-08-21 US US12/545,498 patent/US20090311866A1/en not_active Abandoned
- 2009-10-21 US US12/582,912 patent/US20100040802A1/en not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| EP1344842A3 (de) | 2004-03-10 |
| US7262500B2 (en) | 2007-08-28 |
| EP1512769B1 (de) | 2009-09-16 |
| EP1344842B1 (de) | 2009-09-23 |
| US20040029384A1 (en) | 2004-02-12 |
| KR20030074325A (ko) | 2003-09-19 |
| KR100527219B1 (ko) | 2005-11-08 |
| US20050217579A1 (en) | 2005-10-06 |
| EP1344842A2 (de) | 2003-09-17 |
| EP1512771A1 (de) | 2005-03-09 |
| US20100040802A1 (en) | 2010-02-18 |
| TW200308002A (en) | 2003-12-16 |
| US20090311866A1 (en) | 2009-12-17 |
| TWI225663B (en) | 2004-12-21 |
| EP1512770B1 (de) | 2012-04-25 |
| US7208421B2 (en) | 2007-04-24 |
| EP2050839A3 (de) | 2009-05-13 |
| EP2050839A2 (de) | 2009-04-22 |
| US20050230830A1 (en) | 2005-10-20 |
| US7923374B2 (en) | 2011-04-12 |
| EP1512770A1 (de) | 2005-03-09 |
| US20090233442A1 (en) | 2009-09-17 |
| EP1512772A1 (de) | 2005-03-09 |
| DE60329292D1 (de) | 2009-10-29 |
| EP1512769A1 (de) | 2005-03-09 |
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