DE60325556D1 - Kollektor mit hohem Wirkungsgrad - Google Patents
Kollektor mit hohem WirkungsgradInfo
- Publication number
- DE60325556D1 DE60325556D1 DE60325556T DE60325556T DE60325556D1 DE 60325556 D1 DE60325556 D1 DE 60325556D1 DE 60325556 T DE60325556 T DE 60325556T DE 60325556 T DE60325556 T DE 60325556T DE 60325556 D1 DE60325556 D1 DE 60325556D1
- Authority
- DE
- Germany
- Prior art keywords
- collector
- high efficiency
- efficiency
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
- G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/7015—Details of optical elements
- G03F7/70175—Lamphouse reflector arrangements or collector mirrors, i.e. collecting light from solid angle upstream of the light source
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Nanotechnology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Theoretical Computer Science (AREA)
- Mathematical Physics (AREA)
- Plasma & Fusion (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- X-Ray Techniques (AREA)
- Plasma Technology (AREA)
- Optical Elements Other Than Lenses (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/429,413 US7075713B2 (en) | 2003-05-05 | 2003-05-05 | High efficiency collector for laser plasma EUV source |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE60325556D1 true DE60325556D1 (de) | 2009-02-12 |
Family
ID=32990500
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE60325556T Expired - Lifetime DE60325556D1 (de) | 2003-05-05 | 2003-11-20 | Kollektor mit hohem Wirkungsgrad |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US7075713B2 (de) |
| EP (2) | EP2034490A1 (de) |
| JP (1) | JP2004333475A (de) |
| DE (1) | DE60325556D1 (de) |
Families Citing this family (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4120502B2 (ja) | 2003-07-14 | 2008-07-16 | 株式会社ニコン | 集光光学系、光源ユニット、照明光学装置および露光装置 |
| TWI249588B (en) * | 2004-08-11 | 2006-02-21 | Ind Tech Res Inst | One kind of cavity apparatus of energy wave reflection device |
| JP3912407B2 (ja) * | 2004-12-14 | 2007-05-09 | カシオ計算機株式会社 | 光源ユニット及びプロジェクタ装置 |
| US7482609B2 (en) * | 2005-02-28 | 2009-01-27 | Cymer, Inc. | LPP EUV light source drive laser system |
| JP4218649B2 (ja) * | 2005-03-07 | 2009-02-04 | カシオ計算機株式会社 | 光源ユニット及びプロジェクタ装置 |
| FR2899698A1 (fr) * | 2006-04-07 | 2007-10-12 | Sagem Defense Securite | Dispositif de collecte de flux de rayonnement electromagnetique dans l'extreme ultraviolet |
| EP2083328B1 (de) * | 2008-01-28 | 2013-06-19 | Media Lario s.r.l. | Kollektor für streifenden Strahlungseinfall geeignet für lasererzeugte Plasmaquellen |
| WO2010043288A1 (en) * | 2008-10-17 | 2010-04-22 | Asml Netherlands B.V. | Collector assembly, radiation source, lithographic appparatus and device manufacturing method |
| EP2182412A1 (de) * | 2008-11-04 | 2010-05-05 | ASML Netherlands B.V. | Strahlungsquelle und lithografische Vorrichtung |
| US9513569B2 (en) | 2010-03-18 | 2016-12-06 | ETH Zürich | Optical collector for collecting extreme ultraviolet radiation, method for operating such an optical collector, and EUV source with such a collector |
| JP5670174B2 (ja) * | 2010-03-18 | 2015-02-18 | ギガフォトン株式会社 | チャンバ装置および極端紫外光生成装置 |
| US8587768B2 (en) * | 2010-04-05 | 2013-11-19 | Media Lario S.R.L. | EUV collector system with enhanced EUV radiation collection |
| DE102010028655A1 (de) * | 2010-05-06 | 2011-11-10 | Carl Zeiss Smt Gmbh | EUV-Kollektor |
| US9057962B2 (en) * | 2010-06-18 | 2015-06-16 | Media Lario S.R.L. | Source-collector module with GIC mirror and LPP EUV light source |
| JP2012028759A (ja) * | 2010-06-29 | 2012-02-09 | Asml Netherlands Bv | Euv放射源およびeuv放射を発生させる方法 |
| US20120050706A1 (en) * | 2010-08-30 | 2012-03-01 | Media Lario S.R.L | Source-collector module with GIC mirror and xenon ice EUV LPP target system |
| DE102011084266A1 (de) * | 2011-10-11 | 2013-04-11 | Carl Zeiss Smt Gmbh | Kollektor |
| NL2010274C2 (en) | 2012-02-11 | 2015-02-26 | Media Lario Srl | Source-collector modules for euv lithography employing a gic mirror and a lpp source. |
| DE102012220465A1 (de) | 2012-11-09 | 2014-05-15 | Carl Zeiss Smt Gmbh | EUV-Kollektor |
| DE102013204441A1 (de) | 2013-03-14 | 2014-04-03 | Carl Zeiss Smt Gmbh | Kollektor |
| NL2012499A (en) * | 2013-04-17 | 2014-10-20 | Asml Netherlands Bv | Radiation collector, radiation source and lithographic apparatus. |
| DE102013218128A1 (de) | 2013-09-11 | 2015-03-12 | Carl Zeiss Smt Gmbh | Beleuchtungssystem |
| DE102013218132A1 (de) | 2013-09-11 | 2015-03-12 | Carl Zeiss Smt Gmbh | Kollektor |
| JP6498680B2 (ja) * | 2014-01-27 | 2019-04-10 | エーエスエムエル ネザーランズ ビー.ブイ. | 放射源 |
| KR102313345B1 (ko) | 2014-10-02 | 2021-10-15 | 삼성전자주식회사 | 광대역 광원 및 이를 구비하는 광학 검사장치 |
| US10128016B2 (en) | 2016-01-12 | 2018-11-13 | Asml Netherlands B.V. | EUV element having barrier to hydrogen transport |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2198014A (en) * | 1937-07-22 | 1940-04-23 | Harry G Ott | Optical system |
| US3078760A (en) * | 1958-11-03 | 1963-02-26 | Dietzgen Co Eugene | Optical projection system |
| US4048490A (en) * | 1976-06-11 | 1977-09-13 | Union Carbide Corporation | Apparatus for delivering relatively cold UV to a substrate |
| JPS63208310A (ja) * | 1987-02-24 | 1988-08-29 | Nec Corp | 組立式アンテナ反射鏡 |
| NL8801348A (nl) * | 1988-05-26 | 1989-12-18 | Philips Nv | Belichtingsstelsel. |
| US5823662A (en) * | 1994-08-25 | 1998-10-20 | Lightware, Inc. | High efficiency illumination system |
| US6586757B2 (en) * | 1997-05-12 | 2003-07-01 | Cymer, Inc. | Plasma focus light source with active and buffer gas control |
| JP3602717B2 (ja) * | 1998-03-11 | 2004-12-15 | エヌ・ティ・ティ・アドバンステクノロジ株式会社 | 多層膜x線反射鏡 |
| DE10138313A1 (de) * | 2001-01-23 | 2002-07-25 | Zeiss Carl | Kollektor für Beleuchtugnssysteme mit einer Wellenlänge < 193 nm |
| JP2000089000A (ja) * | 1998-09-14 | 2000-03-31 | Nikon Corp | X線発生装置 |
| US6351058B1 (en) * | 1999-07-12 | 2002-02-26 | Eg&G Ilc Technology, Inc. | Xenon ceramic lamp with integrated compound reflectors |
| US6278764B1 (en) * | 1999-07-22 | 2001-08-21 | The Regents Of The Unviersity Of California | High efficiency replicated x-ray optics and fabrication method |
| JP2002006096A (ja) * | 2000-06-23 | 2002-01-09 | Nikon Corp | 電磁波発生装置、これを用いた半導体製造装置並びに半導体デバイスの製造方法 |
| US6633048B2 (en) | 2001-05-03 | 2003-10-14 | Northrop Grumman Corporation | High output extreme ultraviolet source |
-
2003
- 2003-05-05 US US10/429,413 patent/US7075713B2/en not_active Expired - Fee Related
- 2003-11-20 EP EP08020476A patent/EP2034490A1/de not_active Withdrawn
- 2003-11-20 DE DE60325556T patent/DE60325556D1/de not_active Expired - Lifetime
- 2003-11-20 EP EP03026822A patent/EP1475807B1/de not_active Expired - Lifetime
-
2004
- 2004-01-20 JP JP2004012084A patent/JP2004333475A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| EP1475807A2 (de) | 2004-11-10 |
| EP1475807B1 (de) | 2008-12-31 |
| US7075713B2 (en) | 2006-07-11 |
| EP1475807A3 (de) | 2006-04-19 |
| EP2034490A1 (de) | 2009-03-11 |
| JP2004333475A (ja) | 2004-11-25 |
| US20040223531A1 (en) | 2004-11-11 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition |