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DE60324876D1 - Dünne Ferritschicht, Verfahren zur deren Herstellung, und ihre Verwendung in einem elektromagnetischen Geräuschunterdrücker - Google Patents

Dünne Ferritschicht, Verfahren zur deren Herstellung, und ihre Verwendung in einem elektromagnetischen Geräuschunterdrücker

Info

Publication number
DE60324876D1
DE60324876D1 DE60324876T DE60324876T DE60324876D1 DE 60324876 D1 DE60324876 D1 DE 60324876D1 DE 60324876 T DE60324876 T DE 60324876T DE 60324876 T DE60324876 T DE 60324876T DE 60324876 D1 DE60324876 D1 DE 60324876D1
Authority
DE
Germany
Prior art keywords
preparation
electromagnetic noise
noise suppressor
ferrite layer
thin ferrite
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60324876T
Other languages
English (en)
Inventor
Koichi Kondo
Okikuni Takahata
Tatsuya Chiba
Hiroshi Ono
Shigeyoshi Yoshida
Masanori Abe
Masahiro Yamaguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokin Corp
Original Assignee
NEC Tokin Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2002268687A external-priority patent/JP3957183B2/ja
Priority claimed from JP2002268932A external-priority patent/JP2004111477A/ja
Priority claimed from JP2002269009A external-priority patent/JP4997484B2/ja
Application filed by NEC Tokin Corp filed Critical NEC Tokin Corp
Application granted granted Critical
Publication of DE60324876D1 publication Critical patent/DE60324876D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
    • H01F41/24—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates from liquids
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/62—Record carriers characterised by the selection of the material
    • G11B5/68—Record carriers characterised by the selection of the material comprising one or more layers of magnetisable material homogeneously mixed with a bonding agent
    • G11B5/70—Record carriers characterised by the selection of the material comprising one or more layers of magnetisable material homogeneously mixed with a bonding agent on a base layer
    • G11B5/706—Record carriers characterised by the selection of the material comprising one or more layers of magnetisable material homogeneously mixed with a bonding agent on a base layer characterised by the composition of the magnetic material
    • G11B5/70626—Record carriers characterised by the selection of the material comprising one or more layers of magnetisable material homogeneously mixed with a bonding agent on a base layer characterised by the composition of the magnetic material containing non-metallic substances
    • G11B5/70642—Record carriers characterised by the selection of the material comprising one or more layers of magnetisable material homogeneously mixed with a bonding agent on a base layer characterised by the composition of the magnetic material containing non-metallic substances iron oxides
    • G11B5/70652—Record carriers characterised by the selection of the material comprising one or more layers of magnetisable material homogeneously mixed with a bonding agent on a base layer characterised by the composition of the magnetic material containing non-metallic substances iron oxides gamma - Fe2 O3
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
    • H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
    • H01F10/18—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being compounds
    • H01F10/20—Ferrites
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/0213—Electrical arrangements not otherwise provided for
    • H05K1/0216—Reduction of cross-talk, noise or electromagnetic interference
    • H05K1/023—Reduction of cross-talk, noise or electromagnetic interference using auxiliary mounted passive components or auxiliary substances
    • H05K1/0233—Filters, inductors or a magnetic substance
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12465—All metal or with adjacent metals having magnetic properties, or preformed fiber orientation coordinate with shape
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/32—Composite [nonstructural laminate] of inorganic material having metal-compound-containing layer and having defined magnetic layer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/32—Composite [nonstructural laminate] of inorganic material having metal-compound-containing layer and having defined magnetic layer
    • Y10T428/325—Magnetic layer next to second metal compound-containing layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Thin Magnetic Films (AREA)
  • Hard Magnetic Materials (AREA)
  • Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
DE60324876T 2002-09-13 2003-09-12 Dünne Ferritschicht, Verfahren zur deren Herstellung, und ihre Verwendung in einem elektromagnetischen Geräuschunterdrücker Expired - Lifetime DE60324876D1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2002268687A JP3957183B2 (ja) 2002-09-13 2002-09-13 フェライト膜、及びその製造方法
JP2002268932A JP2004111477A (ja) 2002-09-13 2002-09-13 フェライト薄膜、その製造方法およびそれを用いた電磁雑音抑制体
JP2002269009A JP4997484B2 (ja) 2002-09-13 2002-09-13 フェライト膜とその製造方法、およびそれを用いた電磁雑音抑制体

Publications (1)

Publication Number Publication Date
DE60324876D1 true DE60324876D1 (de) 2009-01-08

Family

ID=31982144

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60324876T Expired - Lifetime DE60324876D1 (de) 2002-09-13 2003-09-12 Dünne Ferritschicht, Verfahren zur deren Herstellung, und ihre Verwendung in einem elektromagnetischen Geräuschunterdrücker

Country Status (3)

Country Link
US (3) US7160636B2 (de)
EP (1) EP1403886B1 (de)
DE (1) DE60324876D1 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7160636B2 (en) * 2002-09-13 2007-01-09 Nec Tokin Corporation Ferrite thin film, method of manufacturing the same and electromagnetic noise suppressor using the same
US7625633B2 (en) * 2003-03-25 2009-12-01 Shin-Etsu Polymer., Ltd. Electromagnetic noise suppressor, article with electromagnetic noise suppressing function, and their manufacturing methods
WO2005009605A1 (ja) * 2003-07-24 2005-02-03 Ryoichi Aogaki 磁気障壁により形成されたマイクロリアクタ
JP4417377B2 (ja) * 2004-02-24 2010-02-17 信越ポリマー株式会社 電磁波ノイズ抑制体、電磁波ノイズ抑制機能付構造体、およびそれらの製造方法
JP5271714B2 (ja) * 2006-11-22 2013-08-21 Ｎｅｃトーキン株式会社 Ｅｂｇ構造体、アンテナ装置、ｒｆｉｄタグ、ノイズフィルタ、ノイズ吸収シート及びノイズ吸収機能付き配線基板
JP5546895B2 (ja) * 2009-04-30 2014-07-09 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
KR101671048B1 (ko) * 2009-08-25 2016-10-31 액세스 비지니스 그룹 인터내셔날 엘엘씨 영구 적층된 자속 집중기 조립체 및 가요성 자속 집중기 조립체
CN106392072B (zh) * 2016-10-20 2020-04-10 中国人民解放军装甲兵工程学院 磁控激光熔覆成形设备与方法
CN113087532B (zh) * 2021-03-04 2022-10-14 电子科技大学 一种高性能NiZn铁氧体薄膜的制备方法
CN115752705B (zh) * 2022-09-26 2025-05-27 北京航空航天大学 一种微观的磁屏蔽装置磁场噪声分析方法
CN117966135A (zh) * 2024-02-28 2024-05-03 电子科技大学 一种(222)取向生长镍锌铁氧体薄膜低温制备方法

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* Cited by examiner, † Cited by third party
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JPS59111929A (ja) * 1982-12-15 1984-06-28 Masanori Abe フエライト膜作製方法
JPS60109021A (ja) * 1983-11-17 1985-06-14 Hitachi Maxell Ltd 磁気記録媒体
JPS60140713A (ja) 1983-12-27 1985-07-25 Masanori Abe フエライト膜作製方法
JPS60202522A (ja) 1984-03-27 1985-10-14 Mitsubishi Chem Ind Ltd 磁気記録媒体
JPS6130674A (ja) 1984-07-20 1986-02-12 Nippon Paint Co Ltd フエライト膜形成法
JPS61179877A (ja) 1984-12-27 1986-08-12 Nippon Paint Co Ltd フエライト膜の形成方法
JPS61222924A (ja) 1985-03-28 1986-10-03 Nippon Paint Co Ltd フエライト膜の形成方法
JPS62204505A (ja) 1986-03-05 1987-09-09 Sony Corp 酸化物磁性薄膜
CA1315612C (en) * 1986-03-18 1993-04-06 Shogo Nasu Perpendicular magnetic storage medium
JPH076072B2 (ja) 1986-08-08 1995-01-25 日本ペイント株式会社 フエライト膜の形成方法
JPS63181305A (ja) 1987-01-22 1988-07-26 Matsushita Electric Ind Co Ltd 酸化鉄垂直磁化薄膜の製造方法
JPH01246149A (ja) 1988-03-25 1989-10-02 Matsushita Electric Ind Co Ltd フェライト膜の形成方法
JP2668998B2 (ja) 1988-10-21 1997-10-27 松下電器産業株式会社 フェライト膜の形成方法
JPH02116631A (ja) 1988-10-21 1990-05-01 Matsushita Electric Ind Co Ltd フェライト膜の形成方法
US5093117A (en) 1989-01-24 1992-03-03 Baxter International Inc. Compositions and method for the treatment or prophylaxis of sepsis or septic shock
JPH02248328A (ja) * 1989-03-22 1990-10-04 Matsushita Electric Ind Co Ltd フェライト膜の形成方法
US5094897A (en) * 1989-05-02 1992-03-10 Tdk Corporation Magnetic recording medium comprising a glass substrate and a gamma Fe2 3 magnetic thin film with specified X-ray diffraction and surface roughness
JP2942279B2 (ja) * 1989-06-29 1999-08-30 ティーディーケイ株式会社 磁気記録再生方法および磁気記録媒体
JPH0338006A (ja) 1989-07-05 1991-02-19 Matsushita Electric Ind Co Ltd 異方性フェライト膜およびその形成方法
JP2961452B2 (ja) * 1990-09-05 1999-10-12 キヤノン株式会社 情報処理装置
US5336337A (en) * 1991-02-05 1994-08-09 Kabushiki Kaisha Toshiba Magnetrostrictive materials and methods of making such materials
US5453328A (en) * 1993-01-22 1995-09-26 Kansai Paint Co., Ltd. Electromagnetic wave reflection-preventing material and electromagnetic wave reflection-preventing method
JPH08147665A (ja) * 1994-11-11 1996-06-07 Hitachi Ltd 磁気記録媒体及びこれを用いた磁気記憶装置
JPH09162588A (ja) 1995-12-06 1997-06-20 Tosoh Corp 電波吸収体
US5833770A (en) * 1996-02-26 1998-11-10 Alps Electric Co., Ltd. High frequency soft magnetic alloy and plane magnetic element, antenna and wave absorber comprising the same
JPH09252191A (ja) 1996-03-14 1997-09-22 Toshiba Corp 回路基板装置
CN1155022C (zh) * 1997-02-25 2004-06-23 Tdk株式会社 氧化物磁性材料、铁氧体颗粒、烧结磁体、粘结磁体、磁记录介质和电机
JP3772458B2 (ja) * 1997-04-30 2006-05-10 ソニー株式会社 磁気ヘッド及びその製造方法
JPH11110732A (ja) * 1997-09-30 1999-04-23 Toda Kogyo Corp 磁気記録媒体
JP2001053486A (ja) 1999-08-16 2001-02-23 Sony Corp 電磁波吸収方法
EP2028690A3 (de) * 2000-04-04 2011-02-09 Nec Tokin Corporation Elektromagnetischer Rauschunterdrücker, Halbleiterbauelement damit und Verfahren zu seiner Herstellung
US6716488B2 (en) * 2001-06-22 2004-04-06 Agere Systems Inc. Ferrite film formation method
JPWO2003015109A1 (ja) * 2001-08-09 2004-12-02 財団法人理工学振興会 フェライト被覆金属微粒子圧縮成形複合磁性材料及びその製造方法
US6797401B2 (en) * 2002-06-20 2004-09-28 Lockheed-Martin Corporation Electromagnetic wave absorbing materials
US7160636B2 (en) * 2002-09-13 2007-01-09 Nec Tokin Corporation Ferrite thin film, method of manufacturing the same and electromagnetic noise suppressor using the same

Also Published As

Publication number Publication date
EP1403886A3 (de) 2004-06-09
US20040157085A1 (en) 2004-08-12
US7648774B2 (en) 2010-01-19
US7438946B2 (en) 2008-10-21
EP1403886A2 (de) 2004-03-31
EP1403886B1 (de) 2008-11-26
US20090061256A1 (en) 2009-03-05
US20070077369A1 (en) 2007-04-05
US7160636B2 (en) 2007-01-09

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Legal Events

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