[go: up one dir, main page]

DE60322991D1 - Diodeanordnung - Google Patents

Diodeanordnung

Info

Publication number
DE60322991D1
DE60322991D1 DE60322991T DE60322991T DE60322991D1 DE 60322991 D1 DE60322991 D1 DE 60322991D1 DE 60322991 T DE60322991 T DE 60322991T DE 60322991 T DE60322991 T DE 60322991T DE 60322991 D1 DE60322991 D1 DE 60322991D1
Authority
DE
Germany
Prior art keywords
diode arrangement
diode
arrangement
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60322991T
Other languages
English (en)
Inventor
Mizue Kitada
Kosuke Ohshima
Shinji Kunori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shindengen Electric Manufacturing Co Ltd
Original Assignee
Shindengen Electric Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shindengen Electric Manufacturing Co Ltd filed Critical Shindengen Electric Manufacturing Co Ltd
Application granted granted Critical
Publication of DE60322991D1 publication Critical patent/DE60322991D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/01—Manufacture or treatment
    • H10D62/051—Forming charge compensation regions, e.g. superjunctions
    • H10D62/058—Forming charge compensation regions, e.g. superjunctions by using trenches, e.g. implanting into sidewalls of trenches or refilling trenches
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/109—Reduced surface field [RESURF] PN junction structures
    • H10D62/111—Multiple RESURF structures, e.g. double RESURF or 3D-RESURF structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
DE60322991T 2002-02-20 2003-02-20 Diodeanordnung Expired - Lifetime DE60322991D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002042535A JP3914785B2 (ja) 2002-02-20 2002-02-20 ダイオード素子

Publications (1)

Publication Number Publication Date
DE60322991D1 true DE60322991D1 (de) 2008-10-02

Family

ID=27655252

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60322991T Expired - Lifetime DE60322991D1 (de) 2002-02-20 2003-02-20 Diodeanordnung

Country Status (4)

Country Link
US (1) US6768138B1 (de)
EP (1) EP1339105B1 (de)
JP (1) JP3914785B2 (de)
DE (1) DE60322991D1 (de)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6841825B2 (en) 2002-06-05 2005-01-11 Shindengen Electric Manufacturing Co., Ltd. Semiconductor device
JP4274771B2 (ja) * 2002-10-04 2009-06-10 新電元工業株式会社 半導体装置
JP3971670B2 (ja) 2002-06-28 2007-09-05 新電元工業株式会社 半導体装置
JP3779243B2 (ja) * 2002-07-31 2006-05-24 富士通株式会社 半導体装置及びその製造方法
US6966101B2 (en) * 2003-09-23 2005-11-22 Door & Window Hardware Co. Handle of a glass door
JP4623259B2 (ja) * 2003-12-05 2011-02-02 サンケン電気株式会社 ショットキバリアを有する半導体装置
JP4773716B2 (ja) * 2004-03-31 2011-09-14 株式会社デンソー 半導体基板の製造方法
JP4721653B2 (ja) 2004-05-12 2011-07-13 トヨタ自動車株式会社 絶縁ゲート型半導体装置
US7238976B1 (en) * 2004-06-15 2007-07-03 Qspeed Semiconductor Inc. Schottky barrier rectifier and method of manufacturing the same
JP4940546B2 (ja) * 2004-12-13 2012-05-30 株式会社デンソー 半導体装置
JP4961686B2 (ja) * 2005-06-03 2012-06-27 株式会社デンソー 半導体装置
JP5351519B2 (ja) * 2005-12-27 2013-11-27 パワー・インテグレーションズ・インコーポレーテッド 高速回復整流器構造体の装置および方法
EP1850396A3 (de) * 2006-04-28 2008-09-17 Nissan Motor Co., Ltd. Halbleiterbauelement und dessen Herstellungsmethode
JP4695622B2 (ja) 2007-05-02 2011-06-08 株式会社東芝 半導体装置
JP2009059764A (ja) * 2007-08-30 2009-03-19 Panasonic Corp ショットキーバリアダイオードおよびその製造方法
TWI398022B (zh) * 2010-03-17 2013-06-01 國立中興大學 Separation method of epitaxial substrate of photovoltaic element
JP5715461B2 (ja) * 2011-03-28 2015-05-07 新電元工業株式会社 半導体装置の製造方法
JP7147141B2 (ja) * 2017-09-11 2022-10-05 Tdk株式会社 ショットキーバリアダイオード
CN109727860A (zh) * 2017-10-30 2019-05-07 全球能源互联网研究院 一种制备碳化硅超结二极管的方法
JP7165322B2 (ja) * 2018-03-30 2022-11-04 Tdk株式会社 ショットキーバリアダイオード

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1294558B (de) 1961-06-07 1969-05-08 Westinghouse Electric Corp Hochspannungsgleichrichter und Verfahren zum Herstellen
US3391287A (en) 1965-07-30 1968-07-02 Westinghouse Electric Corp Guard junctions for p-nu junction semiconductor devices
US3541403A (en) 1967-10-19 1970-11-17 Bell Telephone Labor Inc Guard ring for schottky barrier devices
GB2089119A (en) 1980-12-10 1982-06-16 Philips Electronic Associated High voltage semiconductor devices
JPS61206262A (ja) * 1985-03-11 1986-09-12 Shindengen Electric Mfg Co Ltd 高耐圧プレ−ナ型半導体装置
JP2908818B2 (ja) * 1989-09-18 1999-06-21 株式会社日立製作所 半導体装置の製造方法
JPH0750791B2 (ja) * 1989-09-20 1995-05-31 株式会社日立製作所 半導体整流ダイオード及びそれを使つた電源装置並びに電子計算機
CN1019720B (zh) 1991-03-19 1992-12-30 电子科技大学 半导体功率器件
EP0586716B1 (de) * 1992-08-10 1997-10-22 Siemens Aktiengesellschaft Leistungs-MOSFET mit verbesserter Avalanche-Festigkeit
US5241195A (en) 1992-08-13 1993-08-31 North Carolina State University At Raleigh Merged P-I-N/Schottky power rectifier having extended P-I-N junction
DE19740195C2 (de) * 1997-09-12 1999-12-02 Siemens Ag Halbleiterbauelement mit Metall-Halbleiterübergang mit niedrigem Sperrstrom
US6204097B1 (en) 1999-03-01 2001-03-20 Semiconductor Components Industries, Llc Semiconductor device and method of manufacture
JP2000312011A (ja) * 1999-04-26 2000-11-07 Rohm Co Ltd 整流用半導体装置
JP4363736B2 (ja) 2000-03-01 2009-11-11 新電元工業株式会社 トランジスタ及びその製造方法
JP3860705B2 (ja) 2000-03-31 2006-12-20 新電元工業株式会社 半導体装置
JP4865166B2 (ja) 2001-08-30 2012-02-01 新電元工業株式会社 トランジスタの製造方法、ダイオードの製造方法

Also Published As

Publication number Publication date
EP1339105A3 (de) 2004-09-15
JP3914785B2 (ja) 2007-05-16
EP1339105B1 (de) 2008-08-20
US6768138B1 (en) 2004-07-27
EP1339105A2 (de) 2003-08-27
JP2003243671A (ja) 2003-08-29

Similar Documents

Publication Publication Date Title
EP1556719A4 (de) Lichtemittierendes bauelement
DK3473251T3 (da) Nikotin-cellulose-kombination
ATE457980T1 (de) Aryloxime
ATE534648T1 (de) C-6-modifizierte indazolylpyrrolotriazine
DE60327592D1 (de) Leuchtdiode
ATE318817T1 (de) Aza-arylpiperazine
ATE427876T1 (de) Luftkissenboot
DE50212360D1 (de) Anfahrhilfesteuerungsvorrichtung
DE50212349D1 (de) Hirurgie
NO20044046L (no) Substituerte hydroksyetylaminer
DE60326590D1 (de) Tend lamotrigin
DE60322991D1 (de) Diodeanordnung
ATE349458T1 (de) Etonogestrelester
DE112004002671D2 (de) Diode
ATE496887T1 (de) Substituierte 5-aminomethyl-1h-pyrrol-2-carbons ureamide
ATA1572002A (de) Managementspleisskassette
ATA4142004A (de) Trägerverbau
ATE469773T1 (de) Zugöse
ATA19152002A (de) Hubkupplung
DE50209283D1 (de) Tropfbewässerungsrohr
ATE396192T1 (de) N-sulfonylaminothiazole
ATA8272002A (de) Lichtemittierendes bauelement
ATE350379T1 (de) Substituierte benzdioxepine
DE50300322D1 (de) Zylinderkopfdichtung
DE10244834B8 (de) Suszeptometer

Legal Events

Date Code Title Description
8364 No opposition during term of opposition