DE60321781D1 - Photodetektormatrix mit durch wände isolierten pixeln, hybridisiert auf eine leseschaltung - Google Patents
Photodetektormatrix mit durch wände isolierten pixeln, hybridisiert auf eine leseschaltungInfo
- Publication number
- DE60321781D1 DE60321781D1 DE60321781T DE60321781T DE60321781D1 DE 60321781 D1 DE60321781 D1 DE 60321781D1 DE 60321781 T DE60321781 T DE 60321781T DE 60321781 T DE60321781 T DE 60321781T DE 60321781 D1 DE60321781 D1 DE 60321781D1
- Authority
- DE
- Germany
- Prior art keywords
- photodetektormatrix
- hybridized
- reading
- isolated pixels
- walls isolated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
- H10F39/184—Infrared image sensors
- H10F39/1843—Infrared image sensors of the hybrid type
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/93—Interconnections
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR0204617A FR2838561B1 (fr) | 2002-04-12 | 2002-04-12 | Matrice de photodectecteurs, a pixels isoles par des murs, hybridee sur un circuit de lecture |
| PCT/FR2003/001139 WO2003088359A1 (fr) | 2002-04-12 | 2003-04-10 | Matrice de photodetecteurs, a pixels isoles par des murs, hybridee sur un circuit de lecture |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE60321781D1 true DE60321781D1 (de) | 2008-08-07 |
Family
ID=28459796
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE60321781T Expired - Lifetime DE60321781D1 (de) | 2002-04-12 | 2003-04-10 | Photodetektormatrix mit durch wände isolierten pixeln, hybridisiert auf eine leseschaltung |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US6891242B2 (de) |
| EP (1) | EP1495494B1 (de) |
| JP (1) | JP4663240B2 (de) |
| DE (1) | DE60321781D1 (de) |
| FR (1) | FR2838561B1 (de) |
| WO (1) | WO2003088359A1 (de) |
Families Citing this family (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2838565B1 (fr) * | 2002-04-12 | 2004-06-25 | Commissariat Energie Atomique | Matrice de photodetecteurs, a pixels isoles et grille de stockage, hybridee sur un circuit de lecture |
| JP4496751B2 (ja) * | 2003-10-09 | 2010-07-07 | 日本電気株式会社 | 熱型赤外線固体撮像素子及びその製造方法 |
| JP4349232B2 (ja) * | 2004-07-30 | 2009-10-21 | ソニー株式会社 | 半導体モジュール及びmos型固体撮像装置 |
| JP4538337B2 (ja) * | 2005-02-15 | 2010-09-08 | 富士フイルム株式会社 | 固体撮像素子 |
| TWI254467B (en) * | 2005-03-01 | 2006-05-01 | Advanced Semiconductor Eng | Semiconductor package having an optical device and the method of making the same |
| AU2006247752B2 (en) * | 2005-05-11 | 2012-04-12 | Advanced Liquid Logic, Inc. | Method and device for conducting biochemical or chemical reactions at multiple temperatures |
| KR100718878B1 (ko) * | 2005-06-28 | 2007-05-17 | (주)실리콘화일 | 3차원 구조를 갖는 이미지 센서의 분리형 단위화소 및 그제조방법 |
| KR100801447B1 (ko) * | 2006-06-19 | 2008-02-11 | (주)실리콘화일 | 배면 광 포토다이오드를 이용한 이미지센서 및 그 제조방법 |
| FR2903811B1 (fr) * | 2006-07-12 | 2008-08-29 | Commissariat Energie Atomique | Dispositif electronique comprenant des composants electroniques relies a un substrat et mutuellement connectes et procede de fabrication d'un tel dispositif |
| KR100798276B1 (ko) * | 2006-08-23 | 2008-01-24 | 동부일렉트로닉스 주식회사 | 이미지 센서 및 그 제조방법 |
| KR100860467B1 (ko) * | 2006-12-27 | 2008-09-25 | 동부일렉트로닉스 주식회사 | 씨모스 이미지센서 및 그 제조방법 |
| FR2947952B1 (fr) | 2009-07-07 | 2011-11-25 | Commissariat Energie Atomique | Dispositif photo-detecteur et procede de realisation de dispositif photo-detecteur |
| JP5450633B2 (ja) * | 2009-09-09 | 2014-03-26 | 株式会社東芝 | 固体撮像装置およびその製造方法 |
| FR2954854B1 (fr) * | 2009-12-24 | 2012-05-18 | Commissariat Energie Atomique | Photodetecteur a structure plasmon |
| US8798229B2 (en) | 2011-09-30 | 2014-08-05 | General Electric Company | Detector modules and methods of manufacturing |
| CN102590731B (zh) * | 2012-01-17 | 2015-02-04 | 中国科学院上海微系统与信息技术研究所 | 一种实现红外焦平面阵列探测器中硅读出电路测试的方法 |
| US10177181B2 (en) * | 2014-05-28 | 2019-01-08 | Massachusetts Institute Of Technology | Fuse-protected electronic photodiode array |
| WO2016116889A1 (en) | 2015-01-23 | 2016-07-28 | Gholamreza Chaji | Selective micro device transfer to receiver substrate |
| US10134803B2 (en) | 2015-01-23 | 2018-11-20 | Vuereal Inc. | Micro device integration into system substrate |
| US10700120B2 (en) | 2015-01-23 | 2020-06-30 | Vuereal Inc. | Micro device integration into system substrate |
| US12402466B2 (en) | 2015-01-23 | 2025-08-26 | Vuereal Inc. | Micro device integration into system substrate |
| US10847571B2 (en) | 2015-01-23 | 2020-11-24 | Vuereal Inc. | Micro device integration into system substrate |
| US20170215280A1 (en) | 2016-01-21 | 2017-07-27 | Vuereal Inc. | Selective transfer of micro devices |
| DE112017001139T5 (de) * | 2016-03-04 | 2018-12-06 | Vuereal Inc. | Mikrovorrichtungsintegration in systemsubstrat |
| JP7007088B2 (ja) * | 2016-12-07 | 2022-01-24 | ソニーセミコンダクタソリューションズ株式会社 | 受光素子、撮像素子および電子機器 |
| CN116413729A (zh) * | 2021-12-31 | 2023-07-11 | 华为技术有限公司 | 一种平衡光电探测器、测距装置和测速装置 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0828491B2 (ja) * | 1987-05-13 | 1996-03-21 | 富士通株式会社 | 半導体装置の製造方法 |
| JP2697181B2 (ja) * | 1989-09-04 | 1998-01-14 | 富士通株式会社 | 赤外線検知器の製造方法 |
| US5075238A (en) * | 1990-04-13 | 1991-12-24 | Grumman Aerospace Corporation | Detector interface device |
| JPH0536966A (ja) * | 1991-07-19 | 1993-02-12 | Fujitsu Ltd | 半導体装置 |
| JPH0714996A (ja) * | 1993-06-18 | 1995-01-17 | Mitsubishi Electric Corp | 赤外線検出器とその製造方法 |
| JPH07321369A (ja) * | 1994-05-30 | 1995-12-08 | Fujitsu Ltd | 半導体光検知装置とその製造方法および成膜方法と成膜装置 |
| JP3577368B2 (ja) * | 1995-08-25 | 2004-10-13 | 株式会社東芝 | ハイブリッド型赤外線検出器 |
| JP3019797B2 (ja) * | 1997-02-07 | 2000-03-13 | 日本電気株式会社 | 固体撮像素子とその製造方法 |
| JP4571267B2 (ja) * | 2000-04-04 | 2010-10-27 | 浜松ホトニクス株式会社 | 放射線検出器 |
| US6809008B1 (en) * | 2003-08-28 | 2004-10-26 | Motorola, Inc. | Integrated photosensor for CMOS imagers |
-
2002
- 2002-04-12 FR FR0204617A patent/FR2838561B1/fr not_active Expired - Fee Related
-
2003
- 2003-04-10 DE DE60321781T patent/DE60321781D1/de not_active Expired - Lifetime
- 2003-04-10 JP JP2003585182A patent/JP4663240B2/ja not_active Expired - Fee Related
- 2003-04-10 WO PCT/FR2003/001139 patent/WO2003088359A1/fr not_active Ceased
- 2003-04-10 EP EP03746331A patent/EP1495494B1/de not_active Expired - Lifetime
- 2003-04-10 US US10/479,966 patent/US6891242B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| EP1495494B1 (de) | 2008-06-25 |
| FR2838561B1 (fr) | 2004-09-17 |
| JP4663240B2 (ja) | 2011-04-06 |
| FR2838561A1 (fr) | 2003-10-17 |
| US6891242B2 (en) | 2005-05-10 |
| EP1495494A1 (de) | 2005-01-12 |
| WO2003088359A1 (fr) | 2003-10-23 |
| US20040173863A1 (en) | 2004-09-09 |
| JP2005522882A (ja) | 2005-07-28 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition |