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DE60321781D1 - Photodetektormatrix mit durch wände isolierten pixeln, hybridisiert auf eine leseschaltung - Google Patents

Photodetektormatrix mit durch wände isolierten pixeln, hybridisiert auf eine leseschaltung

Info

Publication number
DE60321781D1
DE60321781D1 DE60321781T DE60321781T DE60321781D1 DE 60321781 D1 DE60321781 D1 DE 60321781D1 DE 60321781 T DE60321781 T DE 60321781T DE 60321781 T DE60321781 T DE 60321781T DE 60321781 D1 DE60321781 D1 DE 60321781D1
Authority
DE
Germany
Prior art keywords
photodetektormatrix
hybridized
reading
isolated pixels
walls isolated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60321781T
Other languages
English (en)
Inventor
Pierre Gidon
Philippe Pantigny
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Application granted granted Critical
Publication of DE60321781D1 publication Critical patent/DE60321781D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10Integrated devices
    • H10F39/12Image sensors
    • H10F39/18Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/184Infrared image sensors
    • H10F39/1843Infrared image sensors of the hybrid type
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/93Interconnections
DE60321781T 2002-04-12 2003-04-10 Photodetektormatrix mit durch wände isolierten pixeln, hybridisiert auf eine leseschaltung Expired - Lifetime DE60321781D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0204617A FR2838561B1 (fr) 2002-04-12 2002-04-12 Matrice de photodectecteurs, a pixels isoles par des murs, hybridee sur un circuit de lecture
PCT/FR2003/001139 WO2003088359A1 (fr) 2002-04-12 2003-04-10 Matrice de photodetecteurs, a pixels isoles par des murs, hybridee sur un circuit de lecture

Publications (1)

Publication Number Publication Date
DE60321781D1 true DE60321781D1 (de) 2008-08-07

Family

ID=28459796

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60321781T Expired - Lifetime DE60321781D1 (de) 2002-04-12 2003-04-10 Photodetektormatrix mit durch wände isolierten pixeln, hybridisiert auf eine leseschaltung

Country Status (6)

Country Link
US (1) US6891242B2 (de)
EP (1) EP1495494B1 (de)
JP (1) JP4663240B2 (de)
DE (1) DE60321781D1 (de)
FR (1) FR2838561B1 (de)
WO (1) WO2003088359A1 (de)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2838565B1 (fr) * 2002-04-12 2004-06-25 Commissariat Energie Atomique Matrice de photodetecteurs, a pixels isoles et grille de stockage, hybridee sur un circuit de lecture
JP4496751B2 (ja) * 2003-10-09 2010-07-07 日本電気株式会社 熱型赤外線固体撮像素子及びその製造方法
JP4349232B2 (ja) * 2004-07-30 2009-10-21 ソニー株式会社 半導体モジュール及びmos型固体撮像装置
JP4538337B2 (ja) * 2005-02-15 2010-09-08 富士フイルム株式会社 固体撮像素子
TWI254467B (en) * 2005-03-01 2006-05-01 Advanced Semiconductor Eng Semiconductor package having an optical device and the method of making the same
AU2006247752B2 (en) * 2005-05-11 2012-04-12 Advanced Liquid Logic, Inc. Method and device for conducting biochemical or chemical reactions at multiple temperatures
KR100718878B1 (ko) * 2005-06-28 2007-05-17 (주)실리콘화일 3차원 구조를 갖는 이미지 센서의 분리형 단위화소 및 그제조방법
KR100801447B1 (ko) * 2006-06-19 2008-02-11 (주)실리콘화일 배면 광 포토다이오드를 이용한 이미지센서 및 그 제조방법
FR2903811B1 (fr) * 2006-07-12 2008-08-29 Commissariat Energie Atomique Dispositif electronique comprenant des composants electroniques relies a un substrat et mutuellement connectes et procede de fabrication d'un tel dispositif
KR100798276B1 (ko) * 2006-08-23 2008-01-24 동부일렉트로닉스 주식회사 이미지 센서 및 그 제조방법
KR100860467B1 (ko) * 2006-12-27 2008-09-25 동부일렉트로닉스 주식회사 씨모스 이미지센서 및 그 제조방법
FR2947952B1 (fr) 2009-07-07 2011-11-25 Commissariat Energie Atomique Dispositif photo-detecteur et procede de realisation de dispositif photo-detecteur
JP5450633B2 (ja) * 2009-09-09 2014-03-26 株式会社東芝 固体撮像装置およびその製造方法
FR2954854B1 (fr) * 2009-12-24 2012-05-18 Commissariat Energie Atomique Photodetecteur a structure plasmon
US8798229B2 (en) 2011-09-30 2014-08-05 General Electric Company Detector modules and methods of manufacturing
CN102590731B (zh) * 2012-01-17 2015-02-04 中国科学院上海微系统与信息技术研究所 一种实现红外焦平面阵列探测器中硅读出电路测试的方法
US10177181B2 (en) * 2014-05-28 2019-01-08 Massachusetts Institute Of Technology Fuse-protected electronic photodiode array
WO2016116889A1 (en) 2015-01-23 2016-07-28 Gholamreza Chaji Selective micro device transfer to receiver substrate
US10134803B2 (en) 2015-01-23 2018-11-20 Vuereal Inc. Micro device integration into system substrate
US10700120B2 (en) 2015-01-23 2020-06-30 Vuereal Inc. Micro device integration into system substrate
US12402466B2 (en) 2015-01-23 2025-08-26 Vuereal Inc. Micro device integration into system substrate
US10847571B2 (en) 2015-01-23 2020-11-24 Vuereal Inc. Micro device integration into system substrate
US20170215280A1 (en) 2016-01-21 2017-07-27 Vuereal Inc. Selective transfer of micro devices
DE112017001139T5 (de) * 2016-03-04 2018-12-06 Vuereal Inc. Mikrovorrichtungsintegration in systemsubstrat
JP7007088B2 (ja) * 2016-12-07 2022-01-24 ソニーセミコンダクタソリューションズ株式会社 受光素子、撮像素子および電子機器
CN116413729A (zh) * 2021-12-31 2023-07-11 华为技术有限公司 一种平衡光电探测器、测距装置和测速装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0828491B2 (ja) * 1987-05-13 1996-03-21 富士通株式会社 半導体装置の製造方法
JP2697181B2 (ja) * 1989-09-04 1998-01-14 富士通株式会社 赤外線検知器の製造方法
US5075238A (en) * 1990-04-13 1991-12-24 Grumman Aerospace Corporation Detector interface device
JPH0536966A (ja) * 1991-07-19 1993-02-12 Fujitsu Ltd 半導体装置
JPH0714996A (ja) * 1993-06-18 1995-01-17 Mitsubishi Electric Corp 赤外線検出器とその製造方法
JPH07321369A (ja) * 1994-05-30 1995-12-08 Fujitsu Ltd 半導体光検知装置とその製造方法および成膜方法と成膜装置
JP3577368B2 (ja) * 1995-08-25 2004-10-13 株式会社東芝 ハイブリッド型赤外線検出器
JP3019797B2 (ja) * 1997-02-07 2000-03-13 日本電気株式会社 固体撮像素子とその製造方法
JP4571267B2 (ja) * 2000-04-04 2010-10-27 浜松ホトニクス株式会社 放射線検出器
US6809008B1 (en) * 2003-08-28 2004-10-26 Motorola, Inc. Integrated photosensor for CMOS imagers

Also Published As

Publication number Publication date
EP1495494B1 (de) 2008-06-25
FR2838561B1 (fr) 2004-09-17
JP4663240B2 (ja) 2011-04-06
FR2838561A1 (fr) 2003-10-17
US6891242B2 (en) 2005-05-10
EP1495494A1 (de) 2005-01-12
WO2003088359A1 (fr) 2003-10-23
US20040173863A1 (en) 2004-09-09
JP2005522882A (ja) 2005-07-28

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