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DE60321652D1 - Rauscharme Verstärker mit Doppelgate-Feldeffekttransistoren - Google Patents

Rauscharme Verstärker mit Doppelgate-Feldeffekttransistoren

Info

Publication number
DE60321652D1
DE60321652D1 DE60321652T DE60321652T DE60321652D1 DE 60321652 D1 DE60321652 D1 DE 60321652D1 DE 60321652 T DE60321652 T DE 60321652T DE 60321652 T DE60321652 T DE 60321652T DE 60321652 D1 DE60321652 D1 DE 60321652D1
Authority
DE
Germany
Prior art keywords
field effect
low noise
effect transistors
gate field
dual gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60321652T
Other languages
English (en)
Inventor
Barry R Allen
Yun H Chung
David J Brunone
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Northrop Grumman Systems Corp
Original Assignee
Northrop Grumman Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Northrop Grumman Corp filed Critical Northrop Grumman Corp
Application granted granted Critical
Publication of DE60321652D1 publication Critical patent/DE60321652D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
    • H03F1/22—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
    • H03F1/226—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively with junction-FET's
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
    • H03F1/306—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in junction-FET amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/34—Negative-feedback-circuit arrangements with or without positive feedback
    • H03F1/342—Negative-feedback-circuit arrangements with or without positive feedback in field-effect transistor amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/294—Indexing scheme relating to amplifiers the amplifier being a low noise amplifier [LNA]
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/372—Noise reduction and elimination in amplifier

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)
DE60321652T 2003-02-12 2003-11-04 Rauscharme Verstärker mit Doppelgate-Feldeffekttransistoren Expired - Lifetime DE60321652D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/364,999 US6801088B2 (en) 2003-02-12 2003-02-12 Dual gate low noise amplifier

Publications (1)

Publication Number Publication Date
DE60321652D1 true DE60321652D1 (de) 2008-07-31

Family

ID=32681701

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60321652T Expired - Lifetime DE60321652D1 (de) 2003-02-12 2003-11-04 Rauscharme Verstärker mit Doppelgate-Feldeffekttransistoren

Country Status (4)

Country Link
US (1) US6801088B2 (de)
EP (1) EP1447906B1 (de)
JP (1) JP2004248252A (de)
DE (1) DE60321652D1 (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7304539B2 (en) * 2003-10-16 2007-12-04 Renesas Technology Corporation High frequency power amplifier circuit and electronic component for high frequency power amplifier
JP4609300B2 (ja) * 2005-12-12 2011-01-12 株式会社村田製作所 電力増幅器および無線機
US7342456B2 (en) * 2006-04-19 2008-03-11 Northrop Grumman Corporation DC-bias network for a distributed amplifier
EP1850491A3 (de) 2006-04-26 2012-02-22 Hitachi Metals, Ltd. Hochfrequenzschaltung, Hochfrequenzvorrichtung und Kommunikationsvorrichtung
US20080123232A1 (en) * 2006-11-21 2008-05-29 Harris Richard A Bi-directional transient blocking unit having a dual-gate transistor
WO2008076822A2 (en) * 2006-12-15 2008-06-26 Lehigh University Adaptive bias technique for field effect transistor
JP5003214B2 (ja) * 2007-03-08 2012-08-15 三菱電機株式会社 高周波装置、及び高周波機器
US20080318544A1 (en) * 2007-06-20 2008-12-25 Hong Kong Applied Science and Technology Research Institute Company Limited Frequency mixer
JP5267321B2 (ja) * 2009-05-18 2013-08-21 富士通株式会社 増幅器、送信装置および利得補償方法
US8829999B2 (en) * 2010-05-20 2014-09-09 Cree, Inc. Low noise amplifiers including group III nitride based high electron mobility transistors
EP3311412A4 (de) 2015-06-16 2019-01-23 Tagore Technology, Inc. Hochleistungs-funkfrequenzschalter
US10819303B1 (en) * 2019-10-17 2020-10-27 Qualcomm Incorporated Amplifier with gain boosting
JPWO2021186651A1 (de) * 2020-03-18 2021-09-23
CN113328706B (zh) * 2021-06-10 2023-09-15 西安博瑞集信电子科技有限公司 一种反馈网络及低噪声放大器

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4409557A (en) * 1981-04-23 1983-10-11 Rca Corporation Bandpass filter with an active element
JPH0779216B2 (ja) * 1986-09-19 1995-08-23 松下電器産業株式会社 高周波増幅装置
US4849710A (en) * 1988-04-27 1989-07-18 Litton Systems, Inc. Temperature compensated high gain FET amplifier
US5015968A (en) * 1990-07-27 1991-05-14 Pacific Monolithics Feedback cascode amplifier
US6049250A (en) * 1998-04-03 2000-04-11 Trw Inc. Dittributed feed back distributed amplifier

Also Published As

Publication number Publication date
EP1447906B1 (de) 2008-06-18
US6801088B2 (en) 2004-10-05
US20040155710A1 (en) 2004-08-12
EP1447906A3 (de) 2004-11-17
JP2004248252A (ja) 2004-09-02
EP1447906A2 (de) 2004-08-18

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