DE60318173D1 - Verfahren zur Abscheidung von Atomschichten aus Metallen - Google Patents
Verfahren zur Abscheidung von Atomschichten aus MetallenInfo
- Publication number
- DE60318173D1 DE60318173D1 DE60318173T DE60318173T DE60318173D1 DE 60318173 D1 DE60318173 D1 DE 60318173D1 DE 60318173 T DE60318173 T DE 60318173T DE 60318173 T DE60318173 T DE 60318173T DE 60318173 D1 DE60318173 D1 DE 60318173D1
- Authority
- DE
- Germany
- Prior art keywords
- metal
- film
- metals
- deposition
- metal halide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H10W20/033—
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C10/00—Solid state diffusion of only metal elements or silicon into metallic material surfaces
- C23C10/60—After-treatment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/08—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal halides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/56—After-treatment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C26/00—Coating not provided for in groups C23C2/00 - C23C24/00
-
- H10P14/432—
-
- H10W20/035—
-
- H10W20/042—
-
- H10W20/0523—
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US287903 | 1999-04-07 | ||
| US28790302A | 2002-11-05 | 2002-11-05 | |
| US10/324,781 US6869876B2 (en) | 2002-11-05 | 2002-12-20 | Process for atomic layer deposition of metal films |
| US324781 | 2002-12-20 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE60318173D1 true DE60318173D1 (de) | 2008-01-31 |
| DE60318173T2 DE60318173T2 (de) | 2008-04-10 |
Family
ID=32314358
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE60318173T Expired - Fee Related DE60318173T2 (de) | 2002-11-05 | 2003-11-04 | Verfahren zur Abscheidung von Atomschichten aus Metallen |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US6869876B2 (de) |
| EP (1) | EP1426463B1 (de) |
| JP (1) | JP4113099B2 (de) |
| KR (1) | KR100639640B1 (de) |
| AT (1) | ATE381628T1 (de) |
| DE (1) | DE60318173T2 (de) |
| TW (1) | TWI240970B (de) |
Families Citing this family (82)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6727169B1 (en) * | 1999-10-15 | 2004-04-27 | Asm International, N.V. | Method of making conformal lining layers for damascene metallization |
| US7494927B2 (en) * | 2000-05-15 | 2009-02-24 | Asm International N.V. | Method of growing electrical conductors |
| US7049226B2 (en) * | 2001-09-26 | 2006-05-23 | Applied Materials, Inc. | Integration of ALD tantalum nitride for copper metallization |
| US6989172B2 (en) * | 2003-01-27 | 2006-01-24 | Micell Technologies, Inc. | Method of coating microelectronic substrates |
| US7205960B2 (en) | 2003-02-19 | 2007-04-17 | Mirage Innovations Ltd. | Chromatic planar optic display system |
| US7534967B2 (en) * | 2003-02-25 | 2009-05-19 | University Of North Texas | Conductor structures including penetrable materials |
| US6951813B2 (en) * | 2003-04-04 | 2005-10-04 | Micron Technology, Inc. | Methods of forming metal-containing layers including a metal bonded to halogens and trialkylaluminum |
| US7311946B2 (en) * | 2003-05-02 | 2007-12-25 | Air Products And Chemicals, Inc. | Methods for depositing metal films on diffusion barrier layers by CVD or ALD processes |
| US7067407B2 (en) * | 2003-08-04 | 2006-06-27 | Asm International, N.V. | Method of growing electrical conductors |
| US7048968B2 (en) * | 2003-08-22 | 2006-05-23 | Micron Technology, Inc. | Methods of depositing materials over substrates, and methods of forming layers over substrates |
| KR100528069B1 (ko) * | 2003-09-02 | 2005-11-15 | 동부아남반도체 주식회사 | 반도체 소자 및 그 제조 방법 |
| US7312163B2 (en) * | 2003-09-24 | 2007-12-25 | Micron Technology, Inc. | Atomic layer deposition methods, and methods of forming materials over semiconductor substrates |
| US20050085031A1 (en) * | 2003-10-15 | 2005-04-21 | Applied Materials, Inc. | Heterogeneous activation layers formed by ionic and electroless reactions used for IC interconnect capping layers |
| US7419702B2 (en) * | 2004-03-31 | 2008-09-02 | Tokyo Electron Limited | Method for processing a substrate |
| CN1954412A (zh) * | 2004-06-04 | 2007-04-25 | 国际商业机器公司 | 互连结构的制造 |
| KR100602087B1 (ko) * | 2004-07-09 | 2006-07-14 | 동부일렉트로닉스 주식회사 | 반도체 소자 및 그 제조방법 |
| US7294851B2 (en) * | 2004-11-03 | 2007-11-13 | Infineon Technologies Ag | Dense seed layer and method of formation |
| US7034169B1 (en) | 2004-12-30 | 2006-04-25 | Air Products And Chemicals, Inc. | Volatile metal β-ketoiminate complexes |
| US7205422B2 (en) * | 2004-12-30 | 2007-04-17 | Air Products And Chemicals, Inc. | Volatile metal β-ketoiminate and metal β-diiminate complexes |
| US8025922B2 (en) | 2005-03-15 | 2011-09-27 | Asm International N.V. | Enhanced deposition of noble metals |
| US7666773B2 (en) | 2005-03-15 | 2010-02-23 | Asm International N.V. | Selective deposition of noble metal thin films |
| US7573640B2 (en) * | 2005-04-04 | 2009-08-11 | Mirage Innovations Ltd. | Multi-plane optical apparatus |
| US8435905B2 (en) * | 2005-06-13 | 2013-05-07 | Hitachi Kokusai Electric Inc. | Manufacturing method of semiconductor device, and substrate processing apparatus |
| US20070014919A1 (en) * | 2005-07-15 | 2007-01-18 | Jani Hamalainen | Atomic layer deposition of noble metal oxides |
| US7314828B2 (en) * | 2005-07-19 | 2008-01-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | Repairing method for low-k dielectric materials |
| US20070054048A1 (en) * | 2005-09-07 | 2007-03-08 | Suvi Haukka | Extended deposition range by hot spots |
| WO2007031992A1 (en) * | 2005-09-14 | 2007-03-22 | Mirage Innovations Ltd. | Diffraction grating with a spatially varying duty-cycle |
| US20080043334A1 (en) * | 2006-08-18 | 2008-02-21 | Mirage Innovations Ltd. | Diffractive optical relay and method for manufacturing the same |
| EP1942364A1 (de) | 2005-09-14 | 2008-07-09 | Mirage Innovations Ltd. | Diffraktives optisches Relais und Herstellungsverfahren dafür |
| DE602006005177D1 (de) * | 2005-11-03 | 2009-03-26 | Mirage Innovations Ltd | Binokulare optische relaiseinrichtung |
| JP4975414B2 (ja) * | 2005-11-16 | 2012-07-11 | エーエスエム インターナショナル エヌ.ヴェー. | Cvd又はaldによる膜の堆積のための方法 |
| US20100177388A1 (en) * | 2006-08-23 | 2010-07-15 | Mirage Innovations Ltd. | Diffractive optical relay device with improved color uniformity |
| US7435484B2 (en) * | 2006-09-01 | 2008-10-14 | Asm Japan K.K. | Ruthenium thin film-formed structure |
| KR100807216B1 (ko) * | 2006-09-29 | 2008-02-28 | 삼성전자주식회사 | 두께 균일성을 향상할 수 있는 박막 형성 장치 및 방법 |
| US7692222B2 (en) * | 2006-11-07 | 2010-04-06 | Raytheon Company | Atomic layer deposition in the formation of gate structures for III-V semiconductor |
| US20080124484A1 (en) * | 2006-11-08 | 2008-05-29 | Asm Japan K.K. | Method of forming ru film and metal wiring structure |
| US8017182B2 (en) * | 2007-06-21 | 2011-09-13 | Asm International N.V. | Method for depositing thin films by mixed pulsed CVD and ALD |
| US7638170B2 (en) * | 2007-06-21 | 2009-12-29 | Asm International N.V. | Low resistivity metal carbonitride thin film deposition by atomic layer deposition |
| WO2009037706A1 (en) * | 2007-09-18 | 2009-03-26 | Mirage Innovations Ltd. | Slanted optical device |
| US8017183B2 (en) * | 2007-09-26 | 2011-09-13 | Eastman Kodak Company | Organosiloxane materials for selective area deposition of inorganic materials |
| US20090087339A1 (en) * | 2007-09-28 | 2009-04-02 | Asm Japan K.K. | METHOD FOR FORMING RUTHENIUM COMPLEX FILM USING Beta-DIKETONE-COORDINATED RUTHENIUM PRECURSOR |
| US8263795B2 (en) * | 2007-11-05 | 2012-09-11 | Air Products And Chemicals, Inc. | Copper precursors for thin film deposition |
| US20090130466A1 (en) * | 2007-11-16 | 2009-05-21 | Air Products And Chemicals, Inc. | Deposition Of Metal Films On Diffusion Layers By Atomic Layer Deposition And Organometallic Precursor Complexes Therefor |
| US9157150B2 (en) * | 2007-12-04 | 2015-10-13 | Cypress Semiconductor Corporation | Method of operating a processing chamber used in forming electronic devices |
| DE102007058571B4 (de) | 2007-12-05 | 2012-02-16 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Substrat mit einer Kupfer enthaltenden Beschichtung und Verfahren zu deren Herstellung mittels Atomic Layer Deposition und Verwendung des Verfahrens |
| US7655564B2 (en) * | 2007-12-12 | 2010-02-02 | Asm Japan, K.K. | Method for forming Ta-Ru liner layer for Cu wiring |
| US8993051B2 (en) | 2007-12-12 | 2015-03-31 | Technische Universiteit Delft | Method for covering particles, especially a battery electrode material particles, and particles obtained with such method and a battery comprising such particle |
| KR20090067505A (ko) * | 2007-12-21 | 2009-06-25 | 에이에스엠지니텍코리아 주식회사 | 루테늄막 증착 방법 |
| US7799674B2 (en) * | 2008-02-19 | 2010-09-21 | Asm Japan K.K. | Ruthenium alloy film for copper interconnects |
| US8084104B2 (en) * | 2008-08-29 | 2011-12-27 | Asm Japan K.K. | Atomic composition controlled ruthenium alloy film formed by plasma-enhanced atomic layer deposition |
| US8133555B2 (en) | 2008-10-14 | 2012-03-13 | Asm Japan K.K. | Method for forming metal film by ALD using beta-diketone metal complex |
| JP5384291B2 (ja) | 2008-11-26 | 2014-01-08 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理方法及び基板処理装置 |
| US9379011B2 (en) | 2008-12-19 | 2016-06-28 | Asm International N.V. | Methods for depositing nickel films and for making nickel silicide and nickel germanide |
| US8557702B2 (en) * | 2009-02-02 | 2013-10-15 | Asm America, Inc. | Plasma-enhanced atomic layers deposition of conductive material over dielectric layers |
| WO2010127156A2 (en) * | 2009-04-29 | 2010-11-04 | Applied Materials, Inc. | Method of forming in-situ pre-gan deposition layer in hvpe |
| US20110020546A1 (en) * | 2009-05-15 | 2011-01-27 | Asm International N.V. | Low Temperature ALD of Noble Metals |
| US8329569B2 (en) * | 2009-07-31 | 2012-12-11 | Asm America, Inc. | Deposition of ruthenium or ruthenium dioxide |
| CN103118806B (zh) * | 2010-07-06 | 2016-10-12 | 埃托特克德国有限公司 | 处理金属表面的方法和由此形成的器件 |
| US20120070981A1 (en) * | 2010-09-17 | 2012-03-22 | Clendenning Scott B | Atomic layer deposition of a copper-containing seed layer |
| US8871617B2 (en) | 2011-04-22 | 2014-10-28 | Asm Ip Holding B.V. | Deposition and reduction of mixed metal oxide thin films |
| US9005705B2 (en) * | 2011-09-14 | 2015-04-14 | Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V. | Method for the production of a substrate having a coating comprising copper, and coated substrate and device prepared by this method |
| CN110592554A (zh) * | 2013-06-26 | 2019-12-20 | 应用材料公司 | 沉积金属合金膜的方法 |
| JP6414909B2 (ja) * | 2013-06-28 | 2018-10-31 | ウェイン ステイト ユニバーシティー | 基板上に層を形成するための還元剤としてのビス(トリメチルシリル)6員環系および類縁化合物 |
| JP6147693B2 (ja) * | 2014-03-31 | 2017-06-14 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理装置、およびプログラム |
| US9607842B1 (en) | 2015-10-02 | 2017-03-28 | Asm Ip Holding B.V. | Methods of forming metal silicides |
| TWI839906B (zh) * | 2017-08-30 | 2024-04-21 | 荷蘭商Asm Ip私人控股有限公司 | 層形成方法 |
| KR102103346B1 (ko) * | 2017-11-15 | 2020-04-22 | 에스케이트리켐 주식회사 | 박막 증착용 전구체 용액 및 이를 이용한 박막 형성 방법. |
| JP7657708B2 (ja) * | 2018-07-12 | 2025-04-07 | ビーエーエスエフ ソシエタス・ヨーロピア | 金属または半金属含有フィルムの製造方法 |
| CN109273402B (zh) * | 2018-09-13 | 2020-08-25 | 德淮半导体有限公司 | 金属阻挡层的制作方法、金属互连结构及其制作方法 |
| SG11202108217UA (en) | 2019-01-28 | 2021-08-30 | Lam Res Corp | Deposition of metal films |
| JP2020132904A (ja) * | 2019-02-13 | 2020-08-31 | 東京エレクトロン株式会社 | 基板処理方法及び基板処理装置 |
| US12334351B2 (en) | 2019-09-03 | 2025-06-17 | Lam Research Corporation | Molybdenum deposition |
| KR20220082023A (ko) | 2019-10-15 | 2022-06-16 | 램 리써치 코포레이션 | 몰리브덴 충진 |
| TW202200828A (zh) | 2020-06-24 | 2022-01-01 | 荷蘭商Asm Ip私人控股有限公司 | 含鉬薄膜的氣相沉積 |
| CN112652677B (zh) * | 2020-12-09 | 2023-10-27 | 晋能光伏技术有限责任公司 | 一种perc电池背面钝化工艺 |
| JP7112768B2 (ja) * | 2020-12-23 | 2022-08-04 | 株式会社クリエイティブコーティングス | 金属膜のald装置 |
| US12031209B2 (en) * | 2021-02-16 | 2024-07-09 | Applied Materials, Inc. | Reducing agents for atomic layer deposition |
| US20230002888A1 (en) * | 2021-07-01 | 2023-01-05 | Applied Materials, Inc. | Method of depositing metal films |
| US12234548B2 (en) | 2022-02-03 | 2025-02-25 | Asm Ip Holding B.V. | Methods of forming copper iodide layer and structures including copper iodide layer |
| US20230317634A1 (en) * | 2022-04-05 | 2023-10-05 | Applied Materials, Inc. | Coatings with diffusion barriers for corrosion and contamination protection |
| US20230386759A1 (en) * | 2022-05-31 | 2023-11-30 | President And Fellows Of Harvard College | Methods of vapor deposition of metal halides |
| WO2025019214A1 (en) * | 2023-07-14 | 2025-01-23 | Lam Research Corporation | Deposition of metal-containing films using halogen-containing activator molecules |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5306666A (en) * | 1992-07-24 | 1994-04-26 | Nippon Steel Corporation | Process for forming a thin metal film by chemical vapor deposition |
| US6475276B1 (en) * | 1999-10-15 | 2002-11-05 | Asm Microchemistry Oy | Production of elemental thin films using a boron-containing reducing agent |
| JP5016767B2 (ja) | 2000-03-07 | 2012-09-05 | エーエスエム インターナショナル エヌ.ヴェー. | 傾斜薄膜の形成方法 |
| US6482733B2 (en) | 2000-05-15 | 2002-11-19 | Asm Microchemistry Oy | Protective layers prior to alternating layer deposition |
| WO2001088972A1 (en) | 2000-05-15 | 2001-11-22 | Asm Microchemistry Oy | Process for producing integrated circuits |
| US6368954B1 (en) | 2000-07-28 | 2002-04-09 | Advanced Micro Devices, Inc. | Method of copper interconnect formation using atomic layer copper deposition |
| US6951804B2 (en) | 2001-02-02 | 2005-10-04 | Applied Materials, Inc. | Formation of a tantalum-nitride layer |
| US20020117399A1 (en) | 2001-02-23 | 2002-08-29 | Applied Materials, Inc. | Atomically thin highly resistive barrier layer in a copper via |
-
2002
- 2002-12-20 US US10/324,781 patent/US6869876B2/en not_active Expired - Fee Related
-
2003
- 2003-10-30 TW TW092130333A patent/TWI240970B/zh not_active IP Right Cessation
- 2003-11-04 EP EP03025374A patent/EP1426463B1/de not_active Expired - Lifetime
- 2003-11-04 DE DE60318173T patent/DE60318173T2/de not_active Expired - Fee Related
- 2003-11-04 AT AT03025374T patent/ATE381628T1/de not_active IP Right Cessation
- 2003-11-05 JP JP2003375645A patent/JP4113099B2/ja not_active Expired - Fee Related
- 2003-11-05 KR KR1020030077883A patent/KR100639640B1/ko not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| EP1426463A1 (de) | 2004-06-09 |
| JP2004156141A (ja) | 2004-06-03 |
| JP4113099B2 (ja) | 2008-07-02 |
| EP1426463B1 (de) | 2007-12-19 |
| DE60318173T2 (de) | 2008-04-10 |
| US6869876B2 (en) | 2005-03-22 |
| TW200408007A (en) | 2004-05-16 |
| US20040087143A1 (en) | 2004-05-06 |
| TWI240970B (en) | 2005-10-01 |
| KR20040040376A (ko) | 2004-05-12 |
| ATE381628T1 (de) | 2008-01-15 |
| KR100639640B1 (ko) | 2006-10-30 |
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