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DE60301152T8 - Organoindiumverbindungen zur Verwendung in der chemischen Dampfphasenabscheidung - Google Patents

Organoindiumverbindungen zur Verwendung in der chemischen Dampfphasenabscheidung Download PDF

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Publication number
DE60301152T8
DE60301152T8 DE60301152T DE60301152T DE60301152T8 DE 60301152 T8 DE60301152 T8 DE 60301152T8 DE 60301152 T DE60301152 T DE 60301152T DE 60301152 T DE60301152 T DE 60301152T DE 60301152 T8 DE60301152 T8 DE 60301152T8
Authority
DE
Germany
Prior art keywords
vapor deposition
chemical vapor
organoindium compounds
organoindium
compounds
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE60301152T
Other languages
English (en)
Other versions
DE60301152D1 (de
DE60301152T2 (de
Inventor
Deodatta Vinayak Danvers Shenai-Khatkhate
Ronald L. Jr. Newfields Dicarlo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shipley Co Inc
DuPont Electronic Materials International LLC
Original Assignee
Shipley Co Inc
Shipley Co LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shipley Co Inc, Shipley Co LLC filed Critical Shipley Co Inc
Publication of DE60301152D1 publication Critical patent/DE60301152D1/de
Application granted granted Critical
Publication of DE60301152T2 publication Critical patent/DE60301152T2/de
Publication of DE60301152T8 publication Critical patent/DE60301152T8/de
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/301—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F5/00—Compounds containing elements of Groups 3 or 13 of the Periodic Table
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F5/00—Compounds containing elements of Groups 3 or 13 of the Periodic Table
    • C07F5/06—Aluminium compounds

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Vapour Deposition (AREA)
DE60301152T 2002-01-17 2003-01-16 Organoindiumverbindungen zur Verwendung in der chemischen Dampfphasenabscheidung Expired - Fee Related DE60301152T8 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US34972602P 2002-01-17 2002-01-17
US349726P 2002-01-17
US39516902P 2002-07-11 2002-07-11
US395169P 2002-07-11

Publications (3)

Publication Number Publication Date
DE60301152D1 DE60301152D1 (de) 2005-09-08
DE60301152T2 DE60301152T2 (de) 2006-02-16
DE60301152T8 true DE60301152T8 (de) 2006-04-27

Family

ID=27616747

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60301152T Expired - Fee Related DE60301152T8 (de) 2002-01-17 2003-01-16 Organoindiumverbindungen zur Verwendung in der chemischen Dampfphasenabscheidung

Country Status (7)

Country Link
US (1) US6680397B2 (de)
EP (1) EP1335415B1 (de)
JP (1) JP2003252878A (de)
KR (1) KR20030063174A (de)
CN (1) CN1445230A (de)
DE (1) DE60301152T8 (de)
TW (1) TW200302811A (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200619222A (en) * 2004-09-02 2006-06-16 Rohm & Haas Elect Mat Method for making organometallic compounds
WO2006037458A1 (de) * 2004-10-01 2006-04-13 Merck Patent Gmbh Elektronische vorrichtungen enthaltend organische halbleiter
EP2545973B1 (de) 2011-07-13 2020-03-04 Dow Global Technologies LLC Reinigung organometallischer verbindungen durch stripping
EP2559681B1 (de) 2011-08-15 2016-06-22 Dow Global Technologies LLC Organometallische Verbindungszubereitung
EP2559682B1 (de) 2011-08-15 2016-08-03 Rohm and Haas Electronic Materials LLC Organometallische Verbindungszubereitung
KR20130087354A (ko) * 2012-01-27 2013-08-06 주식회사 유피케미칼 인듐을 포함한 산화막 및 이의 제조 방법
EP3036243B1 (de) 2013-08-22 2019-10-09 Umicore AG & Co. KG Verfahren zur herstellung von alkylindium-verbindungen und deren verwendung
CN104498896A (zh) * 2014-12-26 2015-04-08 电子科技大学 一种化合物半导体薄膜材料的制备方法
US10858379B2 (en) * 2015-11-11 2020-12-08 Korea Research Institute Of Chemical Technology Metal precursor for making metal oxide
EP3173507A1 (de) * 2015-11-25 2017-05-31 Umicore AG & Co. KG Verfahren zur metallorganischen gasphasenabscheidung unter verwendung von lösungen von indiumalkylverbindungen in kohlenwasserstoffen
JP7240903B2 (ja) * 2019-03-05 2023-03-16 レール・リキード－ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード インジウム化合物および該インジウム化合物を用いたインジウム含有膜の成膜方法
KR20220097266A (ko) * 2020-12-30 2022-07-07 에이에스엠 아이피 홀딩 비.브이. 재료 증착을 위한 조성물, 합성 방법 및 용도
KR20230102179A (ko) * 2021-12-30 2023-07-07 (주)디엔에프 인듐 화합물, 이의 제조방법, 인듐 함유 박막증착용 조성물 및 인듐 함유 박막의 제조방법

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL271849A (de) * 1960-12-23
US4720560A (en) * 1984-10-25 1988-01-19 Morton Thiokol, Inc. Hybrid organometallic compounds, particularly for metal organic chemical vapor deposition
US4847399A (en) 1987-01-23 1989-07-11 Morton Thiokol, Inc. Process for preparing or purifying Group III-A organometallic compounds
US5502227A (en) * 1993-07-27 1996-03-26 Cvd, Incorporated Liquid indium source
GB9315771D0 (en) 1993-07-30 1993-09-15 Epichem Ltd Method of depositing thin metal films
US6204402B1 (en) 1998-12-22 2001-03-20 Advanced Technology Materials, Inc. Indium source reagent compositions, and use thereof for deposition of indium-containing films on substrates and ion implantation of indium-doped shallow junction microelectronics structures

Also Published As

Publication number Publication date
KR20030063174A (ko) 2003-07-28
US6680397B2 (en) 2004-01-20
DE60301152D1 (de) 2005-09-08
US20030181745A1 (en) 2003-09-25
TW200302811A (en) 2003-08-16
CN1445230A (zh) 2003-10-01
EP1335415B1 (de) 2005-08-03
EP1335415A1 (de) 2003-08-13
JP2003252878A (ja) 2003-09-10
DE60301152T2 (de) 2006-02-16

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee